My Inquiry
My Account
Diodes Incorporated DMGD7N45SSD-13
- Part No.:
- DMGD7N45SSD-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
DMGD7N45SSD-13.pdf
- Description:
- MOSFET 2N-CH 450V 0.5A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:7
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
DMGD7N45SSD-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SO-8 package, rated for 450V VDS, 4Ω RDS(on) at VGS = 10V, and 0.85A continuous drain current. It integrates two independent high-voltage switches with body diodes, optimized for DC-DC converters and backlighting circuits requiring compact, AEC-Q101-qualified power switching.
For engineers reviewing the DMGD7N45SSD-13 datasheet, DMGD7N45SSD-13 pinout, DMGD7N45SSD-13 application, or DMGD7N45SSD-13 equivalent, key selection criteria include its 450V breakdown rating, low 256pF input capacitance, dual-channel SO-8 layout, AEC-Q101 qualification, and thermal resistance of 78°C/W (steady-state) - all critical for automotive-grade power management design.
Technical Context
This device implements two discrete N-channel MOSFETs sharing a common SO-8 thermally enhanced plastic package, each with independently controllable gate terminals. Its 450V VBR(DSS) supports off-line and high-bus applications, while the 3Ω typical RDS(on) at 10V gate drive enables efficient operation in low-duty-cycle switching topologies.
The integrated body diodes exhibit 1.2V max forward voltage at 0.7A and 103ns reverse recovery time, supporting synchronous rectification and freewheeling functions. Gate charge parameters - Qg = 6.9nC, Qgd = 3.4nC - indicate moderate drive strength requirements compatible with standard gate drivers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS Rating | 450V - supports direct connection to 380V DC bus or 277V AC line-derived supplies without external snubbing |
| RDS(on) Max | 4Ω @ VGS = 10V - delivers ≤1.4W conduction loss at 0.6A, enabling thermally constrained PCB layouts |
| ID Continuous | 0.85A @ TA = +25°C - suitable for low-power auxiliary rails and LED string current control |
| Ciss | 256pF - reduces gate drive power demand and eases EMI filtering in 100–500kHz switching designs |
| tr/tf | 6.4ns/56.6ns - fast turn-on with controlled fall time minimizes cross-conduction loss in half-bridge configurations |
| TJ Range | −55°C to +150°C - validated for under-hood automotive environments and industrial temperature cycling |
| AEC-Q101 | Qualified - meets stress test requirements for automotive power semiconductors including HTGB, HTRB, and UHAST |
Pinout & Package
Package: SO-8 (Surface-Mount, 8-pin, molded plastic, UL 94V-0 rated, 0.074g mass). Pin 1 marked by notch or bevel; pins 1–4 on left side, 5–8 on right side when viewed top-down with marking facing up.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D1 | Drain of Channel 1 | Main high-side current path for first MOSFET; electrically isolated from D2; connects to HV rail |
| S1 | Source of Channel 1 | Return node for Channel 1; tied to gate driver reference or current-sense resistor |
| G1 | Gate of Channel 1 | Control input for Channel 1; requires ≥3.5V threshold; driven by dedicated gate driver |
| S2 | Source of Channel 2 | Return node for Channel 2; may be tied to S1 or kept independent for isolated switching |
| G2 | Gate of Channel 2 | Independent control input for second MOSFET; no internal coupling to G1 |
| D2 | Drain of Channel 2 | Main high-side current path for second MOSFET; fully isolated from D1 |
Key Features
| Feature | Design Value |
|---|---|
| Dual independent N-channel topology | Enables space-efficient implementation of half-bridge, dual-output DC-DC, or redundant switching paths in one SO-8 footprint |
| 450V BVDSS with 1.4A avalanche rating | Withstands repetitive inductive switching surges up to 2.2A (10µs pulse), reducing need for external clamping |
| Low 1µA IDSS leakage at 450V | Minimizes standby power loss in always-on systems such as automotive body controllers and smart lighting |
| Lead-free, halogen-free, AEC-Q101 qualified | Meets automotive PPAP requirements and RoHS 2 compliance without derating or process exceptions |
| Thermally optimized SO-8 layout | 13.3°C/W RΘJC enables direct heatsinking via exposed pad (per AP02002 outline) for >1W dissipation |
Applications
| Motor Control | Backlighting |
|---|---|
Use Scenario: Driving small brushed DC motors in automotive HVAC actuators and seat positioners. IC Role / Device Role / Timing Role: Dual-channel high-side switch controlling motor direction and braking via complementary PWM signals. Use Value: 450V rating accommodates battery transients up to 400V; dual integration eliminates discrete pairing and matching errors. | Use Scenario: Constant-current regulation for CCFL or LED backlight strings in automotive instrument clusters. IC Role / Device Role / Timing Role: High-voltage current sink switch operating in linear or PWM mode to set backlight intensity. Use Value: Low RDS(on) and tight VGS(th) tolerance (3.5–4.5V) ensure stable current across temperature and unit-to-unit variation. |
| DC-DC Converters | Power Management |
Use Scenario: Primary-side switch in isolated flyback converters powering infotainment subsystems. IC Role / Device Role / Timing Role: High-voltage switching element handling 380V DC input with 6.9nC total gate charge for <500kHz operation. Use Value: Coss = 22.5pF and Crss = 0.83pF reduce capacitive losses and improve light-load efficiency. | Use Scenario: Load switching and power sequencing in multi-rail automotive ECUs. IC Role / Device Role / Timing Role: Dual independent load switches enabling controlled power-up/down of sub-systems (e.g., CAN transceiver + sensor interface). Use Value: Independent gate control allows staggered turn-on to limit inrush; AEC-Q101 ensures reliability over 15-year vehicle life. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual high-voltage N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3052LSD-13 | 30V VDS, 32mΩ RDS(on), same SO-8 dual-N package | Designed for low-voltage logic-level switching only; unsuitable for >60V bus applications | Select only for 5–24V systems where high-voltage capability is unnecessary |
| IPD7N45S3-13 | 450V VDS, 3.5Ω RDS(on), TO-252 package (single-channel) | Single-channel, larger footprint, higher thermal resistance (RΘJA = 100°C/W) | Choose when board space permits discrete placement and higher power (>1.5W) dissipation is required |
Compared with DMN3052LSD-13 and IPD7N45S3-13, DMGD7N45SSD-13 uniquely combines 450V rating, dual-channel integration, and AEC-Q101 qualification in SO-8 - enabling compact, automotive-compliant high-voltage switching not achievable with either alternative.
Availability
DMGD7N45SSD-13 is available at Aetrix Electronics and suitable for motor control, backlighting, DC-DC converters, and automotive power management applications requiring stable component supply, long-term lifecycle support, and AEC-Q101-compliant sourcing.
Supply support for DMGD7N45SSD-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and consumer markets.
The DMGD7N45SSD belongs to Diodes' high-voltage MOSFET product line, engineered specifically for space-constrained, thermally demanding automotive and industrial power conversion where dual-channel integration and AEC-Q101 validation are mandatory.
FAQ
What is the maximum safe operating voltage for DMGD7N45SSD-13?
The absolute maximum drain-source voltage is 450V DC, verified per JEDEC JESD22-A114 test conditions. Operation above this rating risks irreversible avalanche failure. Derating to 405V (90% of rating) is recommended for designs subject to line transients or inductive kickback, especially in automotive 24V systems with load-dump events.
Can both channels be used in parallel to increase current capacity?
No - the two channels are electrically isolated but not matched for parallel operation. RDS(on) tolerance (±25%) and thermal coupling differences cause current imbalance. Parallel use violates SO-8 thermal limits and voids AEC-Q101 qualification. For higher current, select a single-channel part with appropriate RDS(on) and package thermal performance.
Is the SO-8 package thermally enhanced with an exposed pad?
No - the standard SO-8 package for DMGD7N45SSD-13 has no exposed thermal pad. Thermal performance relies on copper pour under pins 1–4 and 5–8 per AP02001 pad layout. For higher power, consider mounting on 2oz FR-4 with 1-inch² copper area, achieving RΘJA = 78°C/W (steady-state) as specified.
Does DMGD7N45SSD-13 support 3.3V logic-level gate drive?
No - the gate threshold voltage range is 3.5V to 4.5V, and RDS(on) is specified only at VGS = 10V. At 3.3V, the device remains in weak inversion with RDS(on) > 20Ω and high conduction loss. A gate driver capable of 10V output (e.g., TC4427) is required for full enhancement and low-loss operation.
DMGD7N45SSD-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 450V
- Current - Continuous Drain (Id) @ 25°C:
- 500mA (Ta)
- Rds On (Max) @ Id, Vgs:
- 4Ohm @ 400mA, 10V
- Vgs(th) (Max) @ Id:
- 4.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 6.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 256pF @ 25V
- Power - Max:
- 1.64W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
DMGD7N45SSD-13 FAQ
1.How can I place an order for DMGD7N45SSD-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMGD7N45SSD-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMGD7N45SSD-13 reliable?
The price and inventory of DMGD7N45SSD-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMGD7N45SSD-13 is usually 5 days.
3.What payment methods are accepted for DMGD7N45SSD-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMGD7N45SSD-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMGD7N45SSD-13?
DMGD7N45SSD-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMGD7N45SSD-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMGD7N45SSD-13?
For technical support, including DMGD7N45SSD-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMGD7N45SSD-13 requirements.
6.How does Aetrix verify that DMGD7N45SSD-13 is sourced from the original manufacturer or authorized distributors?
All DMGD7N45SSD-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMGD7N45SSD-13 meets industry standards.
7.What is the process for return or replacement of DMGD7N45SSD-13?
All DMGD7N45SSD-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMGD7N45SSD-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMGD7N45SSD-13 part is unused and in its original packaging.
Return procedure for DMGD7N45SSD-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMGD7N45SSD-13 Tags
-
SSM6N7002KFU,LF
Toshiba Semiconductor and Storage
-
2N7002DW-7-F
Diodes Incorporated
-
SSM6L56FE,LM
Toshiba Semiconductor and Storage
-
SSM6N37FU,LF
Toshiba Semiconductor and Storage
-
2N7002DWH6327XTSA1
Infineon Technologies
-
2N7002BKS,115
Nexperia USA Inc.
-
DMG1016UDW-7
Diodes Incorporated
-
UM6K33NTN
Rohm Semiconductor
-
DMG6602SVT-7
Diodes Incorporated
-
EM6K34T2CR
Rohm Semiconductor
-
UM6K34NTCN
Rohm Semiconductor
-
DMG6601LVT-7
Diodes Incorporated
Tech Hub
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
