Diodes Incorporated DMHC10H170SFJ-13

Overview

DMHC10H170SFJ-13 from Diodes Incorporated is a 100V complementary enhancement-mode MOSFET H-bridge IC integrating two N-channel (Q1, Q4) and two P-channel (Q2, Q3) power transistors in a single V-DFN5045-12 package. It delivers R_DS(ON) of 160mΩ @ 10V for N-ch and 250mΩ @ −10V for P-ch, supports ±2.9A/−2.3A continuous drain current, and enables high-efficiency motor control and bridge rectification in space-constrained DC-DC and battery-powered systems.

For engineers reviewing the DMHC10H170SFJ-13 datasheet, DMHC10H170SFJ-13 pinout, DMHC10H170SFJ-13 application, or DMHC10H170SFJ-13 equivalent, this device is selected for compact half-bridge and full-bridge topologies requiring matched complementary channel performance, low gate charge (9.7nC/17.5nC), and thermal resistance of 60°C/W in surface-mount power management designs.

Technical Context

This H-bridge integrates four discrete MOSFETs with internally matched threshold voltages (V_GS(TH) = +1.0–3.0V for N-ch; −1.0–−3.0V for P-ch) and symmetrical dynamic characteristics including C_iss of 1167pF (N-ch) and 1239pF (P-ch). Its dual-channel layout supports synchronous rectification and bidirectional current flow without external level-shifting circuitry.

The device operates across −55°C to +150°C junction temperature, features body diodes with V_SD = 0.9–1.0V (N-ch) and −0.9–−1.2V (P-ch), and sustains pulsed drain currents up to +13A/−11A with 1% duty cycle-enabling robust transient handling in motor drive commutation and regenerative braking circuits.

Key Specifications

Pinout & Package

Package: V-DFN5045-12 (5.0mm × 4.5mm × 0.8mm, 12-terminal exposed-pad land-grid array with NiPdAu-plated terminals).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary H-bridge MOSFET applications.

Compared with DMHC10H170SFJ-13, the DMHC10H170SFG-13 sacrifices thermal performance for size reduction, while the SI6926ADQ-T1-GE3 lacks voltage rating and body diode optimization required for 48V+ industrial motor control-making the original part uniquely suited for high-voltage, high-reliability H-bridge implementations.

Availability

DMHC10H170SFJ-13 is available at Aetrix Electronics and suitable for brushless DC motor drivers, battery-powered power tools, and industrial DC-DC converters requiring stable component supply, long-term lifecycle assurance, and automotive-grade traceability.

Supply support for DMHC10H170SFJ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal solutions, with manufacturing certified to IATF 16949 and environmental standards including RoHS 3 and halogen-free compliance.

This device belongs to Diodes' DMHC high-voltage complementary MOSFET family, engineered specifically for space-constrained, high-efficiency power conversion and motor control applications demanding matched N/P-channel performance in monolithic packages.

FAQ

What is the maximum continuous drain current rating for each channel at 70°C ambient?

At T_A = +70°C, Q1 and Q4 (N-channel) support 2.3A continuous drain current, while Q2 and Q3 (P-channel) support −1.9A. These values are specified in the Maximum Ratings table and assume mounting on FR-4 with 2oz copper and 1-inch² thermal pad per the datasheet test condition.

Does DMHC10H170SFJ-13 include internal body diodes, and what are their forward voltage characteristics?

Yes-each MOSFET includes an integrated body diode. The N-channel diodes exhibit V_SD = 0.9–1.0V at 10A, and the P-channel diodes show V_SD = −0.9–−1.2V at −5A, both measured at V_GS = 0V. These diodes support freewheeling and regenerative braking without external components.

Can this device be used in automotive applications, and what qualifications does it meet?

DMHC10H170SFJ-13 is manufactured in IATF 16949-certified facilities and supports PPAP documentation. While not pre-qualified to AEC-Q101, Diodes offers qualification support upon request for automotive programs-confirming suitability for under-hood and infotainment power stages meeting AEC-Q200 passive stress requirements.

What is the recommended PCB layout for optimal thermal performance?

Use a minimum 1-inch² copper pad connected to the exposed thermal pad via ≥6 thermal vias (0.3mm diameter, filled and plated) to inner ground/power planes. Maintain ≥0.25mm soldermask opening around the pad and follow Diodes' V-DFN5045-12 suggested pad layout (Document DS37571, page 9) for reliable reflow and mechanical integrity.