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Diodes Incorporated DMHC6070LSD-13

Part No.:
DMHC6070LSD-13
Manufacturer:
Diodes Incorporated
Category:
FET, MOSFET Arrays
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixDMHC6070LSD-13.pdf
Description:
MOSFET 2N/2P-CH 60V 3.1A 8SO
Quantity:
Payment:
Payment
Shipping:
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Inventory:6,573

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Product details

Overview

DMHC6070LSD from Diodes Incorporated is a 60V complementary enhancement-mode MOSFET H-bridge IC in SO-8 package, integrating two N-channel (60V, 100mΩ @ 10V) and two P-channel (-60V, 170mΩ @ -10V) devices for bidirectional motor control. It delivers 4.1A N-channel and 3.1A P-channel continuous drain current at 25°C with low gate charge (11.5nC/8.9nC) and fast switching (tD(ON) = 9.6ns / 7.6ns). Used in compact DC motor drivers requiring low-voltage gate drive and integrated half-bridge topology.

For engineers reviewing the DMHC6070LSD datasheet, DMHC6070LSD pinout, DMHC6070LSD application, or DMHC6070LSD equivalent, key selection criteria include verified RDS(on) at 4.5V/10V, SO-8 thermal resistance (RθJA = 75°C/W), body diode recovery (tRR = 10.5ns/10.8ns), and H-bridge channel matching for PWM-driven brushed DC motors.

Technical Context

This H-bridge integrates matched N+P pairs per half-bridge leg, enabling synchronous rectification and shoot-through prevention via external gate timing control. Its dual-channel architecture supports 4-quadrant operation with independent gate inputs for high-side (P-channel) and low-side (N-channel) switches.

Designed for low-voltage logic compatibility, it operates with VGS thresholds of 1–3V (N) and -1 to -3V (P), allowing direct drive from 3.3V/5V microcontrollers. The SO-8 package provides 11°C/W junction-to-case thermal resistance, supporting 1.6W total power dissipation under FR-4 PCB conditions.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS ±60V - Supports 24V/48V DC bus systems with 2× safety margin against transients
RDS(on) (N, 10V) 100mΩ - Enables ≤0.4W conduction loss at 2A load current per N-FET
RDS(on) (P, -10V) 170mΩ - Limits P-FET conduction loss to ≤0.7W at 2A, critical for high-side efficiency
QG (N/P) 11.5nC / 8.9nC - Allows <100ns full-switching cycles at 5V drive with 20Ω gate resistor
tRR (body diode) 10.5ns / 10.8ns - Minimizes reverse recovery losses during freewheeling in PWM motor control
RθJA 75°C/W - Requires minimal copper area (1″², 2oz) for thermal management in space-constrained designs
ID (cont, 25°C) 4.1A (N) / 3.1A (P) - Sustains 10W motor loads with derating above 70°C ambient

Pinout & Package

Package: SO-8 surface-mount plastic package with matte tin-plated copper leadframe, UL 94V-0 rated, moisture sensitivity level 1.

Pin/Terminal Circuit Role Design Meaning
1 (N1G) N-channel Gate 1 Controls low-side N-FET of first half-bridge; requires 0–10V logic-level drive
2 (N1S/N2S) N-source / P-source common Shared source node for N1 and N2; connects to system ground or current-sense resistor
3 (N1D/P1D) N-drain 1 / P-drain 1 Output terminal of first half-bridge; connects to motor winding end A
4 (P1G) P-channel Gate 1 Controls high-side P-FET of first half-bridge; referenced to source (pin 2)
5 (P2G) P-channel Gate 2 Controls high-side P-FET of second half-bridge; referenced to pin 6 source
6 (N2S/P2S) N-source 2 / P-source 2 Shared source node for N2 and P2; isolated from pin 2 for dual-H-bridge operation
7 (N2D/P2D) N-drain 2 / P-drain 2 Output terminal of second half-bridge; connects to motor winding end B
8 (N2G) N-channel Gate 2 Controls low-side N-FET of second half-bridge; enables independent phase control

Key Features

Feature Design Value
Complementary H-bridge integration Two independent half-bridges (N+P per leg) reduce board area by 60% vs discrete solutions
Low gate charge asymmetry N-FET QG = 11.5nC, P-FET QG = 8.9nC - Enables matched turn-on/turn-off timing with single gate driver
Body diode optimization tRR = 10.5ns (N), 10.8ns (P) - Reduces switching loss and EMI in 20–100kHz PWM motor drives
Green packaging Halogen- and antimony-free, RoHS-compliant molding compound (<900ppm Br/Cl, <1000ppm Sb)
Thermal performance RθJC = 11°C/W - Enables direct heatsinking via exposed pad (SO-8 variant with thermal pad not used here)

Applications

Brushed DC Motor Driver DC-AC Inverter Stage

Use Scenario: Bidirectional speed and direction control of 24V/48V brushed DC motors in robotics and actuation systems.

IC Role / Device Role / Timing Role: Dual half-bridge switch controlling motor winding voltage polarity and current path; supports 20–50kHz PWM with dead-time management.

Use Value: Integrated N+P pairs eliminate external level-shifting for high-side P-FETs, reducing component count and layout complexity.

Use Scenario: Low-power single-phase DC-AC inversion for auxiliary power supplies and lighting ballasts.

IC Role / Device Role / Timing Role: H-bridge output stage converting regulated DC bus to square-wave AC; synchronized switching prevents shoot-through.

Use Value: Matched RDS(on) and fast tF/tR (21ns/37.8ns) minimize conduction and switching losses at 25kHz operation.

Automotive HVAC Blower Control Industrial Valve Actuator

Use Scenario: PWM-controlled blower fan in automotive climate systems with reverse capability and stall protection.

IC Role / Device Role / Timing Role: Motor interface IC handling bidirectional drive, current sensing (via source pins), and overtemperature shutdown signaling.

Use Value: SO-8 footprint meets automotive AEC-Q200 stress requirements when mounted on 2oz copper; TJ range -55°C to +150°C ensures under-hood reliability.

Use Scenario: Precision positioning of solenoid valves and linear actuators in factory automation with position feedback.

IC Role / Device Role / Timing Role: H-bridge driver delivering controlled current pulses to valve coils; body diode handles inductive kickback without external flyback diodes.

Use Value: Low QGD/QGS ratio (1.5nC/2.1nC N, 1.7nC/1.4nC P) enables crisp edge control for microsecond-level pulse-width modulation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar H-bridge motor control applications.

Alternative Part Technical Difference Application Difference Selection Advice
Si9986DY-T1-E3 60V dual-N-channel only; requires external high-side driver or bootstrap circuit Lacks integrated P-channel high-side switches; increases BOM count and layout area Select when higher N-FET current (6.5A) and lower RDS(on) (42mΩ) outweigh need for external level shifters
DRV8876NPRR Integrated gate driver + current sense; 45V max VDD; thermally enhanced WQFN Higher integration but lower voltage rating; not drop-in compatible due to different pinout and control interface Choose for closed-loop current-controlled motor systems where on-chip current monitoring reduces external ADC needs

Compared with Si9986DY-T1-E3 and DRV8876NPRR, DMHC6070LSD uniquely delivers true complementary H-bridge functionality in SO-8 without external level-shifting components, balancing voltage rating, thermal performance, and PCB real estate-ideal for cost-sensitive, space-constrained 24–48V brushed DC motor applications.

Availability

DMHC6070LSD is available at Aetrix Electronics and suitable for DC motor control, DC-AC inverters, automotive HVAC systems, and industrial valve actuators requiring stable component supply across production lifecycles.

Supply support for DMHC6070LSD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, automotive, and consumer markets.

DMHC6070LSD belongs to Diodes' high-efficiency power MOSFET portfolio, engineered specifically for compact, low-voltage H-bridge motor control where integration, thermal robustness, and gate-drive simplicity are prioritized over fully integrated driver features.

FAQ

What is the maximum safe operating voltage for DMHC6070LSD in continuous DC motor drive?

The device supports ±60V drain-source voltage ratings for both N- and P-channel FETs, with recommended maximum continuous bus voltage of 48V to maintain 20% headroom against transients and ensure long-term reliability under load switching conditions. Exceeding 48V requires transient suppression and rigorous SOA validation per Figure 12 and Figure 24.

Can DMHC6070LSD be driven directly from a 3.3V microcontroller GPIO?

Yes-its N-channel VGS(th) (1.0–3.0V) and P-channel VGS(th) (-1.0 to -3.0V) allow functional switching at 3.3V, though RDS(on) increases to 120mΩ (N) and 250mΩ (P) at VGS = ±4.5V. For optimal efficiency, use 5V gate drive or add discrete level shifters for high-side P-FET control.

How is thermal performance validated for DMHC6070LSD in SO-8 without an exposed pad?

Thermal data is measured on FR-4 PCB with 1″² 2oz copper per JEDEC standards (RθJA = 75°C/W steady-state). Derating curves in Figure 12 and Figure 24 confirm 1.6W total power dissipation at 25°C ambient; above 70°C, continuous current must be reduced per the 2.5A/3.3A N/P-channel limits shown in Maximum Ratings tables.

Does DMHC6070LSD include internal protection features like overcurrent or thermal shutdown?

No-the device is a bare complementary MOSFET H-bridge without integrated protection circuitry. System-level safeguards (e.g., external current-sense resistors on source pins 2/6, NTC thermistors, or MCU-based fault detection) must be implemented to prevent avalanche failure, latch-up, or thermal runaway during motor stall or short-circuit events.

DMHC6070LSD-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N and 2 P-Channel (Full Bridge)
FET Feature:
-
Drain to Source Voltage (Vdss):
60V
Current - Continuous Drain (Id) @ 25°C:
3.1A, 2.4A
Rds On (Max) @ Id, Vgs:
100mOhm @ 1A, 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
11.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
731pF @ 20V, 618pF @ 20V
Power - Max:
1.6W
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SO

DMHC6070LSD-13 FAQ

1.How can I place an order for DMHC6070LSD-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMHC6070LSD-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMHC6070LSD-13 reliable?

The price and inventory of DMHC6070LSD-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMHC6070LSD-13 is usually 5 days.

3.What payment methods are accepted for DMHC6070LSD-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMHC6070LSD-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMHC6070LSD-13?

DMHC6070LSD-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMHC6070LSD-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMHC6070LSD-13?

For technical support, including DMHC6070LSD-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMHC6070LSD-13 requirements.

6.How does Aetrix verify that DMHC6070LSD-13 is sourced from the original manufacturer or authorized distributors?

All DMHC6070LSD-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMHC6070LSD-13 meets industry standards.

7.What is the process for return or replacement of DMHC6070LSD-13?

All DMHC6070LSD-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMHC6070LSD-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMHC6070LSD-13 part is unused and in its original packaging.

Return procedure for DMHC6070LSD-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMHC6070LSD-13 Tags

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