Diodes Incorporated DMHT10H032LFJ-13

Overview

DMHT10H032LFJ-13 from Diodes Incorporated is a 100V N-channel enhancement-mode MOSFET H-bridge IC integrating four discrete power MOSFETs in a single V-DFN5045-12 (Type C) package. It delivers 6A continuous drain current at V_GS = 10V, achieves 33mΩ R_DS(ON), and supports 100% unclamped inductive switching (UIS) for robust motor control. It is used in bidirectional DC motor drivers requiring compact, thermally efficient half-bridge topology.

For engineers reviewing the DMHT10H032LFJ-13 datasheet, DMHT10H032LFJ-13 pinout, DMHT10H032LFJ-13 application, or DMHT10H032LFJ-13 equivalent, this page provides verified pin functions, thermal resistance values (R_θJA = 64°C/W with thermal pad), gate charge (Q_g = 11.9nC @ 10V), and validated alternatives for H-bridge replacement in space-constrained industrial motion systems.

Technical Context

This H-bridge integrates two high-side and two low-side N-channel MOSFETs with matched R_DS(ON) and fast switching (t_r = 4.5ns, t_f = 9.3ns). Its internal layout minimizes parasitic inductance and enables synchronous rectification in DC-DC converters.

The device operates across –55°C to +150°C junction temperature, features 1.3–2.5V gate threshold voltage, and sustains 13A avalanche current (L = 0.3mH) with 25.3mJ E_AS. Its NiPdAu-plated terminals ensure solderability per MIL-STD-202, Method 208.

Key Specifications

Pinout & Package

V-DFN5045-12 (Type C) package: 5.0mm × 4.5mm × 0.8mm body, exposed thermal pad (D2a = 2.30mm), 12-pin layout with dual-source/sink configuration optimized for H-bridge symmetry and thermal dissipation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar H-bridge MOSFET applications.

Compared with DMHC3025LSD-13 and SI7850DP-T1-GE3, DMHT10H032LFJ-13 uniquely combines 100V capability, integrated H-bridge topology, 64°C/W thermal resistance, and production-tested UIS in a 5×4.5mm footprint-enabling smaller, cooler-running motor drivers without external driver ICs or complex layout.

Availability

DMHT10H032LFJ-13 is available at Aetrix Electronics and suitable for brushed DC motor control, industrial DC-DC converters, and automotive body electronics requiring stable component supply and long-term lifecycle assurance.

Supply support for DMHT10H032LFJ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in certified IATF 16949 facilities.

This device belongs to Diodes' PowerMOS™ H-Bridge family, engineered specifically for compact, high-efficiency bidirectional power switching in space-constrained industrial and automotive motion systems.

FAQ

What is the maximum safe operating frequency for DMHT10H032LFJ-13 in PWM motor control?

The device supports PWM frequencies up to 500kHz based on its 4.5ns rise time and 9.3ns fall time, but practical operation is limited by thermal constraints. At 6A continuous current and 100% duty cycle, junction temperature remains within spec only up to ~20kHz without forced cooling. For 100kHz+ operation, peak current must be reduced to maintain T_J ≤ 150°C.

Does DMHT10H032LFJ-13 require external gate resistors for stability?

Yes - a 2.2Ω to 4.7Ω series gate resistor is recommended per channel to damp ringing caused by Crss and layout inductance. The device's 1.2Ω intrinsic gate resistance and 6.9pF Crss make it susceptible to oscillation without controlled turn-on/turn-off slew rates, especially in high-di/dt motor commutation.

How is thermal performance affected when the exposed pad is not soldered to PCB copper?

Leaving the thermal pad unsoldered increases R_θJA from 64°C/W to approximately 130°C/W, cutting allowable power dissipation by over 50%. Without thermal pad connection, the device cannot sustain 6A continuously - derating to ≤2.5A is required to avoid exceeding 150°C junction temperature at 25°C ambient.

Can DMHT10H032LFJ-13 be used in synchronous rectification mode for DC-DC converters?

Yes - its matched N-channel pairs and low 33mΩ R_DS(ON) support synchronous rectification in 4-switch buck-boost and SEPIC topologies. Independent gate control allows precise timing alignment with primary-side switches, minimizing body diode conduction and achieving >94% efficiency at 5A output with 100kHz switching.