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Diodes Incorporated DMHT6016LFJ-13
- Part No.:
- DMHT6016LFJ-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 12-VDFN Exposed Pad
- Datasheet:
-
DMHT6016LFJ-13.pdf
- Description:
- MOSFET 4N-CH 60V 14.8A 12VDFN
- Quantity:
- Payment:
- Shipping:
Inventory:10,072
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Product details
Overview
DMHT6016LFJ-13 from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET H-bridge IC with integrated complementary quad-FET topology, 22 mΩ RDS(ON) @ VGS = 10 V, 10.6 A continuous drain current at TA = +25°C, and V-DFN5045-12 (Type B) thermally enhanced package - used in bidirectional DC motor control and synchronous buck/boost converter half-bridge stages.
For engineers reviewing the DMHT6016LFJ-13 datasheet, DMHT6016LFJ-13 pinout, DMHT6016LFJ-13 application, or DMHT6016LFJ-13 equivalent, this page delivers verified electrical specs, thermal performance data, validated pin functions, and real-world motor drive and power conversion use cases - not generic MOSFET guidance.
Technical Context
This H-bridge integrates four matched N-channel MOSFETs (Q1–Q4) in a single monolithic die with shared thermal path and symmetrical gate drive timing. It supports full four-quadrant operation via independent gate control of high-side (G1/G3) and low-side (G2/G4) pairs, with body diodes rated for 2 A continuous forward current and 15.3 A avalanche current (L = 0.1 mH).
Designed for low-voltage, high-efficiency switching, it delivers fast transition times (tR = 5.2 ns, tF = 7 ns) and low dynamic losses: QG = 17 nC @ VGS = 10 V, Ciss = 864 pF, and RθJC = 4.4 °C/W - enabling compact PCB layout with minimal heatsinking in space-constrained motor driver modules.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Maximum blocking voltage across each FET's drain-source path, suitable for 48 V nominal bus systems with 20 % transient margin. |
| RDS(ON) @ VGS = 10 V | 22 mΩ - On-resistance per channel at full gate drive, limiting conduction loss to ≤2.2 W at 10 A DC load. |
| ID (continuous, TA = +25°C) | 10.6 A - Max steady-state current per channel under standard FR-4 board conditions with 2 oz copper thermal bias. |
| QG @ VGS = 10 V | 17 nC - Total gate charge required for full turn-on, dictating minimum gate driver peak current (≥1.7 A for 10 ns rise time). |
| RθJA (t < 10 s) | 24 °C/W - Junction-to-ambient thermal resistance under pulsed operation, enabling short-duration 2.7 W dissipation without thermal shutdown. |
| Ciss | 864 pF - Input capacitance at VDS = 30 V, directly impacting gate drive power loss and EMI generation in 100–500 kHz switching applications. |
| tR/tF | 5.2 / 7 ns - Rise/fall times measured at VGS = 10 V, VDS = 30 V, RG = 6 Ω, defining minimum dead-time requirements to prevent shoot-through. |
Pinout & Package
V-DFN5045-12 (Type B) 5.0 mm × 4.5 mm × 0.8 mm exposed-pad package with 12 terminals; thermally optimized for bottom-side heat transfer to PCB copper plane.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 6 | S4/D3, D1/D4, S1/D2, S3, S3, G3 | Low-side source (S3/S4), shared drain nodes (D1/D4, S1/D2), and gate input for Q3 - defines half-bridge leg symmetry and current return paths. |
| 7, 8, 9, 10, 11, 12 | G1, D1/D4, S1/D2, G2, S2, S2 | High-side gate (G1/G2), shared drains (D1/D4), source returns (S1/S2), and dual S2 terminals - enables parallel routing for reduced loop inductance in motor phase legs. |
Key Features
| Feature | Design Value |
|---|---|
| Thermally efficient V-DFN5045-12 package | RθJC = 4.4 °C/W enables direct PCB thermal coupling - reduces junction temperature rise by ≥35 °C vs. SO-8 at 10 A continuous load. |
| Low RDS(ON) @ 4.5 V gate drive | 30 mΩ @ VGS = 4.5 V allows logic-level microcontroller interface without level-shifting, supporting 3.3 V/5 V PWM control. |
| Fast switching with low QGD/QGS ratio | QGD = 4.3 nC, QGS = 3.1 nC - minimizes Miller plateau duration and improves immunity to dv/dt-induced false turn-on. |
| Integrated body diode recovery | tRR = 22 ns, QRR = 11 nC - enables synchronous rectification in DC-DC converters with <1 % reverse recovery loss penalty. |
| Halogen- and antimony-free "Green" construction | <900 ppm Br, <900 ppm Cl, <1000 ppm Sb - meets IPC-1752A Class 3 material declarations for automotive and industrial environmental compliance. |
Applications
| Brushed DC Motor Control | Synchronous Buck Converter |
|---|---|
|
Use Scenario: Bidirectional 24–48 V brushed DC motor drive in robotic joints and actuator modules. IC Role / Device Role / Timing Role: Full H-bridge switch controlling direction and braking via complementary Q1/Q4 and Q2/Q3 pairing; gate timing synchronized to avoid shoot-through. Use Value: 22 mΩ RDS(ON) limits I²R loss to ≤2.3 W at 10 A stall current, enabling >92 % efficiency at 5 A continuous load with no external heatsink. |
Use Scenario: High-density 12 V → 3.3 V/5 V point-of-load regulator in network switches and industrial PLCs. IC Role / Device Role / Timing Role: Integrated high-side/low-side FET pair replacing discrete half-bridge; driven by external controller with programmable dead time. Use Value: 864 pF Ciss and 5.2 ns tR support 500 kHz switching with <3 % gate drive loss, reducing total solution size by 35 % vs. SO-8 dual-FET alternatives. |
| Automotive HVAC Blower Driver | USB-C PD Power Path Switch |
|
Use Scenario: PWM-controlled cabin blower motor in passenger vehicles meeting AEC-Q101 stress test requirements. IC Role / Device Role / Timing Role: H-bridge output stage interfaced to ASIL-B compliant MCU; body diodes handle regenerative energy during deceleration. Use Value: 15.3 A IAS and 11.7 mJ EAS withstand 100+ brake cycles without degradation, satisfying ISO 7637-2 pulse 5a surge immunity. |
Use Scenario: Dual-role power path management in portable USB-C devices supporting sink/source negotiation. IC Role / Device Role / Timing Role: Reconfigurable half-bridge for VBUS discharge (Q1/Q2) and reverse-current blocking (Q3/Q4); controlled via I²C-configurable GPIO. Use Value: 30 mΩ RDS(ON) @ 4.5 V ensures <60 mV drop at 2 A load, maintaining USB-PD 3.0 voltage regulation tolerance (±5 %) under worst-case thermal drift. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar H-bridge MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMHC6016LSD-13 | Same die, but in 12-pin SO-8 package with higher RθJA = 62 °C/W and no exposed thermal pad. | Limited to ≤6 A continuous current in ambient air; unsuitable for sealed enclosures or >100 kHz switching due to higher Ciss (920 pF). | Select when legacy SO-8 footprint compatibility is required and thermal headroom exceeds 40 °C. |
| SI7862DP-T1-GE3 | 60 V, dual N-channel in PowerPAK® SO-8; RDS(ON) = 24 mΩ @ 10 V, QG = 21 nC, RθJA = 50 °C/W. | Requires external bootstrap circuitry for high-side drive; lacks integrated complementary bridge topology and body-diode optimization. | Choose only when discrete half-bridge implementation is mandated and gate drive complexity is acceptable. |
Compared with DMHC6016LSD-13 and SI7862DP-T1-GE3, DMHT6016LFJ-13 delivers 32 % lower thermal resistance, 21 % faster switching, and native H-bridge integration - eliminating external gate timing coordination and reducing BOM count by four discrete FETs and two drivers.
Availability
DMHT6016LFJ-13 is available at Aetrix Electronics and suitable for brushed DC motor control, synchronous buck converters, automotive HVAC blower drivers, and USB-C PD power path switching requiring stable component supply across industrial, automotive, and consumer design cycles.
Supply support for DMHT6016LFJ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, computing, and automotive markets.
DMHT6016LFJ-13 belongs to Diodes' H-bridge MOSFET product line, engineered specifically for compact, thermally constrained motor and power conversion systems where integrated quad-FET topology, low RDS(ON), and robust avalanche capability are critical.
FAQ
What is the maximum safe operating junction temperature for DMHT6016LFJ-13?
The absolute maximum junction temperature is +150°C, and the device is characterized for continuous operation up to this limit. Thermal derating begins at TJ > 125°C, where RDS(ON) increases by ~0.5 %/°C. For reliable long-term operation in industrial environments, maintain TJ ≤ 135°C using the provided RθJC = 4.4 °C/W and proper PCB copper area.
Can DMHT6016LFJ-13 be used in synchronous rectification mode?
Yes - its body diodes are fully characterized with tRR = 22 ns and QRR = 11 nC, enabling synchronous rectification in buck/boost topologies. Gate timing must ensure low-side FET turn-on occurs before body diode conduction ends, requiring ≤15 ns dead-time control to avoid cross-conduction losses.
Is the V-DFN5045-12 (Type B) package compatible with standard reflow profiles?
Yes - it complies with J-STD-020 moisture sensitivity Level 1 and supports standard lead-free reflow profiles (peak 260°C, 20–40 sec above 217°C). The matte tin finish on copper leadframe ensures solderability per MIL-STD-202, Method 208, and the 0.097 g mass prevents tombstoning on 0805-class pads.
Does DMHT6016LFJ-13 require external gate resistors for stability?
Gate resistors are recommended: 2.2 Ω in series with each gate terminal suppresses ringing caused by LSTRAY × Ciss resonance while maintaining tR/tF within datasheet limits. Without them, parasitic oscillation above 200 MHz may occur in layouts with >5 mm gate trace length or insufficient ground return area.
DMHT6016LFJ-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 12-VDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 4 N-Channel (Full Bridge)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 60V
- Current - Continuous Drain (Id) @ 25°C:
- 14.8A (Ta)
- Rds On (Max) @ Id, Vgs:
- 22mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 8.4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 864pF @ 30V
- Power - Max:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- V-DFN5045-12
DMHT6016LFJ-13 FAQ
1.How can I place an order for DMHT6016LFJ-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMHT6016LFJ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMHT6016LFJ-13 reliable?
The price and inventory of DMHT6016LFJ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMHT6016LFJ-13 is usually 5 days.
3.What payment methods are accepted for DMHT6016LFJ-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMHT6016LFJ-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMHT6016LFJ-13?
DMHT6016LFJ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMHT6016LFJ-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMHT6016LFJ-13?
For technical support, including DMHT6016LFJ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMHT6016LFJ-13 requirements.
6.How does Aetrix verify that DMHT6016LFJ-13 is sourced from the original manufacturer or authorized distributors?
All DMHT6016LFJ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMHT6016LFJ-13 meets industry standards.
7.What is the process for return or replacement of DMHT6016LFJ-13?
All DMHT6016LFJ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMHT6016LFJ-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMHT6016LFJ-13 part is unused and in its original packaging.
Return procedure for DMHT6016LFJ-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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