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Diodes Incorporated DMJ70H1D0SV3
- Part No.:
- DMJ70H1D0SV3
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- TO-251-3 Stub Leads, IPAK
- Datasheet:
-
DMJ70H1D0SV3.pdf
- Description:
- MOSFET N-CHANNEL 700V 6A TO251
- Quantity:
- Payment:
- Shipping:
Inventory:3,209
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Product details
Overview
DMJ70H1D0SV3 from Diodes Incorporated is an N-channel enhancement-mode MOSFET rated for 700 V drain-source voltage, 1.0 Ω RDS(ON) at VGS = 10 V, and 6 A continuous drain current at TC = +25°C. It uses a TO251 (Type HE1) package and is designed for high-voltage switching in offline power supplies, including AC-DC adapters and LCD TV power stages.
For engineers reviewing the DMJ70H1D0SV3 datasheet, DMJ70H1D0SV3 pinout, DMJ70H1D0SV3 application, or DMJ70H1D0SV3 equivalent, key selection criteria include its 700 V BVDSS rating, low 1.0 Ω on-resistance at 10 V gate drive, 420 pF input capacitance, 1.2 °C/W junction-to-case thermal resistance, and suitability for flyback and PFC topologies operating up to 150°C junction temperature.
Technical Context
This MOSFET employs a planar high-voltage process optimized for ruggedness and stable RDS(ON) over temperature - with only ~1.8× increase from –55°C to +150°C at fixed VGS. Its 7.5 mJ avalanche energy rating (L = 60 mH) supports unclamped inductive switching in PFC and SMPS circuits without external snubbing.
The device features low gate charge (Qg = 12.8 nC), fast switching (tD(OFF) = 23 ns), and low reverse recovery charge (QRR = 1.9 µC at TJ = 25°C), enabling high-frequency operation while maintaining EMI control and efficiency in 65–100 kHz power converters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 700 V - Supports primary-side switching in universal-input (85–265 VAC) offline converters without derating. |
| RDS(ON) max | 1.0 Ω @ VGS = 10 V - Enables <1.5 W conduction loss at 6 A, suitable for 30–60 W adapter designs. |
| ID continuous | 6 A @ TC = +25°C - Requires heatsinking above ~45°C case temperature due to 42 W max at TC = +100°C. |
| Ciss | 420 pF @ VDS = 50 V - Low input capacitance reduces gate drive power and improves turn-on speed in hard-switched topologies. |
| Qg | 12.8 nC - Allows efficient driving with standard 1 A peak gate drivers (e.g., UCC27531) at ≤100 kHz. |
| RθJC | 1.2 °C/W - Enables direct mounting to PCB copper pads or small heatsinks for thermal management in compact adapters. |
| tRR | 217 ns @ IS = 5 A, dI/dt = 100 A/µs - Limits body diode reverse recovery losses in discontinuous conduction mode (DCM) flyback. |
Pinout & Package
Package: TO251 (Type HE1), surface-mount, single-gull-wing leadframe with matte tin annealed finish. Molded green compound, UL 94V-0 rated, 0.33 g weight.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Gate | Control terminal; requires ≥2 V threshold (typ. 3.4 V) and 10 V for full enhancement; sensitive to ESD (±30 V max). |
| D | Drain | High-voltage output node; connected internally to die backside; must be isolated from heatsink unless electrically tied. |
| S | Source | Reference node for gate drive; carries full load current and body diode return path; connects to power ground plane. |
Key Features
| Feature | Design Value |
|---|---|
| 700 V BVDSS rating | Enables use in 400 V DC bus applications with ≥20% margin, reducing need for series stacking in industrial PSUs. |
| Low 1.0 Ω RDS(ON) | Reduces conduction loss by ~35% vs. comparable 700 V MOSFETs with >1.5 Ω rating, improving full-load efficiency in 36 W+ adapters. |
| 12.8 nC total gate charge | Lowers required gate driver current and switching loss, supporting higher frequency operation without excessive driver heating. |
| RoHS 3 & Halogen-free | Meets EU Directive 2015/863/EU and Diodes' "Green" definition (<900 ppm Br/Cl, <1000 ppm Sb), enabling compliance in export markets. |
| TO251 (HE1) package | Offers improved thermal performance vs. TO92 or SOT23, with 1.2 °C/W RθJC and compatibility with automated pick-and-place and reflow. |
Applications
| AC-DC Adapters | LCD TV Power Supplies |
|---|---|
|
Use Scenario: Primary-side switch in 36–60 W universal-input flyback converters powering laptop adapters and USB-C chargers. IC Role / Device Role / Timing Role: High-voltage switching element controlling energy transfer during PWM on-time; operates at 65–100 kHz with zero-voltage switching assist. Use Value: 700 V rating eliminates need for voltage clamping in 265 VAC surge conditions; 1.0 Ω RDS(ON) maintains >88% efficiency at full load. |
Use Scenario: PFC boost switch in 100–200 W front-end stages of LCD and PDP TVs with active power factor correction. IC Role / Device Role / Timing Role: Fast-switching, high-BV MOSFET handling 380–400 V DC bus; synchronized to 50/60 Hz line frequency for sinusoidal input current shaping. Use Value: 217 ns body diode tRR minimizes shoot-through risk during transition; 7.5 mJ EAS withstands inductive kick during fault events. |
| LED Driver Power Stages | Industrial Control Power Modules |
|
Use Scenario: Primary switch in constant-current LED drivers for commercial lighting (e.g., streetlights, high-bay fixtures) with 100–150 W output. IC Role / Device Role / Timing Role: Hard-switched MOSFET in quasi-resonant flyback or buck-boost topology; driven by UC384x or CR6853 controllers. Use Value: 150°C max junction temperature allows operation in sealed enclosures; low Ciss enables clean gate waveforms even with long PCB traces. |
Use Scenario: Isolated DC-DC converter primary switch in programmable logic controller (PLC) power modules requiring 24 V/48 V input and 5 V/12 V outputs. IC Role / Device Role / Timing Role: High-reliability switching device in reinforced insulation topologies; subjected to repeated thermal cycling and humidity exposure. Use Value: Green molding compound resists moisture ingress; 1.2 °C/W RθJC ensures stable thermal impedance across -40°C to +85°C ambient. |
Availability
DMJ70H1D0SV3 is available at Aetrix Electronics and suitable for AC-DC adapters, LCD TV power supplies, and industrial control power modules requiring stable component supply and RoHS-compliant sourcing.
Supply support for DMJ70H1D0SV3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
This MOSFET belongs to Diodes' high-voltage power transistor product line, engineered specifically for energy-efficient offline power conversion in consumer, industrial, and lighting applications where reliability and thermal robustness are critical.
FAQ
What is the maximum recommended gate drive voltage for DMJ70H1D0SV3?
The absolute maximum gate-source voltage is ±30 V, but the device achieves full enhancement at VGS = 10 V. Operating between 10 V and 15 V optimizes RDS(ON) and switching speed while avoiding gate oxide stress. Gate drive below 4.5 V risks partial turn-on and increased conduction loss.
Can DMJ70H1D0SV3 replace a 600 V MOSFET in an existing 240 VAC design?
Yes - its 700 V BVDSS provides 16.7% higher voltage margin than typical 600 V parts, allowing direct substitution in 240 VAC systems with peak line voltage of ~340 V. However, verify layout clearance (≥2.5 mm creepage) and gate drive strength, as higher VDSS devices may exhibit slightly higher Qg and Ciss.
Is DMJ70H1D0SV3 suitable for synchronous rectification?
No - it is a standard N-channel MOSFET with no integrated Schottky body diode optimization or low QRR targeting SR applications. Its body diode tRR (217 ns) and QRR (1.9 µC) are not optimized for high-frequency synchronous rectification; dedicated SR controllers require faster, lower-QRR devices.
Does this part have a qualified AEC-Q101 rating for automotive use?
No - DMJ70H1D0SV3 is not AEC-Q101 qualified. It is specified for industrial and consumer applications only, with operating temperature range of –55°C to +150°C but no automotive-grade qualification, stress testing, or PPAP documentation. Automotive designs require explicitly qualified alternatives.
DMJ70H1D0SV3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- TO-251-3 Stub Leads, IPAK
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 700 V
- Current - Continuous Drain (Id) @ 25°C:
- 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1Ohm @ 1.5A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 12.8 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 420 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 104W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-251 (Type TH3)
DMJ70H1D0SV3 FAQ
1.How can I place an order for DMJ70H1D0SV3 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMJ70H1D0SV3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMJ70H1D0SV3 reliable?
The price and inventory of DMJ70H1D0SV3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMJ70H1D0SV3 is usually 5 days.
3.What payment methods are accepted for DMJ70H1D0SV3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMJ70H1D0SV3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMJ70H1D0SV3?
DMJ70H1D0SV3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMJ70H1D0SV3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMJ70H1D0SV3?
For technical support, including DMJ70H1D0SV3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMJ70H1D0SV3 requirements.
6.How does Aetrix verify that DMJ70H1D0SV3 is sourced from the original manufacturer or authorized distributors?
All DMJ70H1D0SV3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMJ70H1D0SV3 meets industry standards.
7.What is the process for return or replacement of DMJ70H1D0SV3?
All DMJ70H1D0SV3 units undergo pre-shipment inspection (PSI). If there is an issue with DMJ70H1D0SV3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMJ70H1D0SV3 part is unused and in its original packaging.
Return procedure for DMJ70H1D0SV3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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