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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMJ70H1D3SH3

Name: DMJ70H1D3SH3
Brand: Diodes Incorporated
SKU: DMJ70H1D3SH3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMJ70H1D3SH3

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: TO-251-3 Stub Leads, IPAK

Datasheet:: DMJ70H1D3SH3.pdf

Description:: MOSFET N-CH 700V 4.6A TO251

Quantity:: RFQ Add To RFQ list

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Product details

Overview

DMJ70H1D3SH3 from Diodes Incorporated is a 700V N-channel enhancement-mode MOSFET in TO251 (uIPAK) package, rated for 4.6A continuous drain current at TC = +25°C, with RDS(on) of 1.3Ω @ VGS = 10V and low input capacitance (Ciss = 351pF). It delivers high-voltage switching capability with robust avalanche energy rating (EAS = 40mJ) and is engineered for AC-DC converters requiring reliable high-BVDSS operation.

For engineers reviewing the DMJ70H1D3SH3 datasheet, DMJ70H1D3SH3 pinout, DMJ70H1D3SH3 application, or DMJ70H1D3SH3 equivalent, key selection criteria include its 700V breakdown voltage, thermal resistance (RθJC = 3.0°C/W), body diode recovery time (trr = 212ns), gate charge (Qg = 13.9nC), and RoHS-compliant green packaging - all critical for high-efficiency power stage design in industrial and lighting systems.

Technical Context

This MOSFET employs planar silicon technology optimized for high-voltage power switching, featuring a rugged body diode with trr = 212ns and Qrr = 1.8µC at TJ = +25°C. Its gate threshold voltage (VGS(th) = 2.0–4.0V) ensures stable turn-on control across temperature, while low Crss (1.1pF) minimizes Miller-induced shoot-through risk in hard-switched topologies.

The device operates over –55°C to +150°C junction range and supports pulsed drain currents up to 5.4A. With RθJC = 3.0°C/W and PD = 41W at TC = +25°C, it enables compact heatsink integration in space-constrained AC-DC adapters and backlight inverters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	700V - Supports primary-side switching in universal-input offline SMPS without derating.
R_DS(on)	1.3Ω max @ V_GS = 10V - Enables <1.5W conduction loss at 4.6A, reducing thermal load in 20–40W power supplies.
I_D (continuous)	4.6A @ T_C = +25°C - Sustains full-load current in TO251-mounted designs with minimal heatsinking.
C_iss	351pF - Low input capacitance reduces gate drive power and improves switching speed in 65–100kHz converters.
E_AS	40mJ - Withstands single-pulse inductive energy in flyback snubberless or PFC boost stages.
t_rr	212ns - Fast body diode recovery limits reverse recovery losses in quasi-resonant and LLC topologies.
Q_g	13.9nC - Enables efficient gate driving with standard 1A peak drivers, minimizing driver IC cost and footprint.

Pinout & Package

Package: TO251 (uIPAK), surface-mount, 3-terminal molded plastic case with matte tin–annealed copper leadframe; UL 94V-0 rated, moisture sensitivity level 1.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	High-current output node / heat sink interface	Exposed metal tab connects directly to drain; requires insulated mounting or thermal pad for PCB heatsinking.
Source	Reference node for gate drive and current sensing	Low-inductance source connection essential for stable gate control and accurate current monitoring in DCM/CCM modes.
Gate	Control input for channel modulation	High-impedance terminal requiring <10Ω series resistance to damp ringing; sensitive to ESD per ±30V rating.

Key Features

Feature	Design Value
700V BVDSS rating	Enables direct use in 230VAC mains-connected primary switches without cascading or voltage dividers.
Low RDS(on) × Qg product	1.3Ω × 13.9nC = 18.1Ω·nC - Balances conduction and switching losses for optimal efficiency in 65–100kHz SMPS.
Green, halogen-free construction	<900ppm Br/Cl, <1000ppm Sb - Meets IEC 61249-2-21 and JEDEC J-STD-020 for eco-compliant industrial manufacturing.
Robust avalanche capability	IAS = 1.1A, EAS = 40mJ - Eliminates need for external clamping in flyback transformer leakage energy absorption.
Low Coss (66pF)	Reduces capacitive turn-off loss and improves ZVS initiation margin in resonant converters.

Applications

AC-DC Power Adapters

LED Backlight Inverters

Use Scenario: 36W universal-input (90–264VAC) flyback adapter for consumer electronics.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch handling 700V drain stress during line surges and startup.

Use Value: 700V rating avoids derating and enables smaller Y-capacitor selection; 40mJ EAS withstands transformer leakage spikes without snubber.

Use Scenario: CCFL or high-brightness LED backlight driver in LCD monitors with 1.2kV isolation requirements.

IC Role / Device Role / Timing Role: Half-bridge high-side switch operating at 50–100kHz with fast body diode recovery.

Use Value: trr = 212ns minimizes dead-time loss; low Ciss allows clean gate drive with integrated half-bridge controllers like IRS2153D.

Industrial Motor Drives

Smart Home Power Supplies

Use Scenario: 24V–48V DC-fed BLDC gate driver auxiliary supply using discrete buck converter.

IC Role / Device Role / Timing Role: Synchronous rectifier or high-side switch in isolated auxiliary rail generation.

Use Value: RDS(on) stability over –40°C to +125°C ensures consistent efficiency across ambient conditions; TO251 footprint simplifies layout in constrained control boards.

Use Scenario: Compact 12V/2A wall plug-in supply for IoT hubs and smart speakers.

IC Role / Device Role / Timing Role: Primary switch in QR flyback topology meeting DOE Level VI and CoC Tier 2 efficiency standards.

Use Value: 13.9nC Qg enables low-cost 0.5A gate driver ICs; green packaging satisfies EU EcoDesign Directive compliance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP7NK70ZFP	700V, RDS(on) = 1.4Ω @ VGS = 10V, TO220FP package, higher Ciss (420pF)	Requires larger heatsink due to TO220FP thermal resistance (RθJC = 2.5°C/W but larger footprint); less suitable for ultra-compact layouts	Prefer when legacy TO220FP board space exists and lower gate charge is not critical.
FQP7N70	700V, RDS(on) = 1.4Ω @ VGS = 10V, TO220 package, no green/halogen-free certification	Lacks RoHS 2 and halogen-free compliance; unsuitable for EU medical or consumer products requiring full "Green" status	Select only for cost-sensitive non-regulated industrial controls where environmental compliance is secondary.

Compared with STP7NK70ZFP and FQP7N70, DMJ70H1D3SH3 offers superior package efficiency (TO251 vs. TO220), verified halogen-free compliance, and lower Ciss-making it preferred for space-constrained, eco-regulated, and high-frequency SMPS designs.

Availability

DMJ70H1D3SH3 is available at Aetrix Electronics and suitable for AC-DC converters, LED backlighting systems, and motor control circuits requiring stable component supply, long-term lifecycle support, and RoHS-compliant green packaging.

Supply support for DMJ70H1D3SH3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, computing, and consumer markets.

This MOSFET belongs to Diodes' high-voltage power transistor portfolio, designed specifically for energy-efficient offline power conversion in compact, thermally demanding applications such as adapters, lighting, and motor drives.

FAQ

What is the maximum safe operating junction temperature for DMJ70H1D3SH3?

The absolute maximum junction temperature is +150°C, and the device is characterized for stable RDS(on) and threshold voltage performance across –55°C to +150°C. Thermal design must ensure TJ remains ≤150°C under worst-case load and ambient conditions, using RθJC = 3.0°C/W and appropriate PCB copper area or heatsink.

Can DMJ70H1D3SH3 be used in zero-voltage switching (ZVS) topologies?

Yes - its low Coss (66pF) and Crss (1.1pF), combined with fast body diode recovery (trr = 212ns), support reliable ZVS initiation in LLC and phase-shifted full-bridge converters. Gate drive timing must account for Qgd = 8.5nC to avoid overlap conduction loss.

Is the TO251 package lead-free and RoHS compliant?

Yes - DMJ70H1D3SH3 features matte tin–annealed terminals over copper leadframe and meets EU RoHS Directive 2011/65/EU (RoHS 2), with halogen and antimony content below 900ppm Br/Cl and 1000ppm Sb, certified as a "Green" device per Diodes Incorporated's specifications.

Does this MOSFET require a gate resistor for EMI suppression?

A series gate resistor (typically 5–15Ω) is recommended to damp high-frequency oscillation caused by L_GS/C_iss resonance and reduce dv/dt-induced EMI. The device's RG = 3.5Ω (intrinsic) means external resistance dominates damping behavior; values >10Ω may increase switching loss without significant EMI benefit.

DMJ70H1D3SH3 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-251-3 Stub Leads, IPAK

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 700 V

Current - Continuous Drain (Id) @ 25°C:: 4.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.3Ohm @ 2.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 13.9 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 351 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 41W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-251 (Type TH3)

DMJ70H1D3SH3 FAQ

1.How can I place an order for DMJ70H1D3SH3 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMJ70H1D3SH3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMJ70H1D3SH3 reliable?

The price and inventory of DMJ70H1D3SH3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMJ70H1D3SH3 is usually 5 days.

3.What payment methods are accepted for DMJ70H1D3SH3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMJ70H1D3SH3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMJ70H1D3SH3?

DMJ70H1D3SH3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMJ70H1D3SH3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMJ70H1D3SH3?

For technical support, including DMJ70H1D3SH3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMJ70H1D3SH3 requirements.

6.How does Aetrix verify that DMJ70H1D3SH3 is sourced from the original manufacturer or authorized distributors?

All DMJ70H1D3SH3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMJ70H1D3SH3 meets industry standards.

7.What is the process for return or replacement of DMJ70H1D3SH3?

All DMJ70H1D3SH3 units undergo pre-shipment inspection (PSI). If there is an issue with DMJ70H1D3SH3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMJ70H1D3SH3 part is unused and in its original packaging.

Return procedure for DMJ70H1D3SH3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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