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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMJ70H1D3SJ3

Name: DMJ70H1D3SJ3
Brand: Diodes Incorporated
SKU: DMJ70H1D3SJ3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMJ70H1D3SJ3

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: DMJ70H1D3SJ3.pdf

Description:: MOSFET N-CH 700V 4.6A TO251

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Inventory:9,238

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Product details

Overview

DMJ70H1D3SJ3 from Diodes Incorporated is a 700V N-channel enhancement-mode MOSFET in TO251 package, with R_DS(ON) = 1.3Ω @ V_GS = 10V, I_D = 4.6A at T_C = +25°C, and low input capacitance (C_ISS = 351pF). It serves as a high-voltage switching element in offline DC-DC converters and motor control power stages.

For engineers reviewing the DMJ70H1D3SJ3 datasheet, DMJ70H1D3SJ3 pinout, DMJ70H1D3SJ3 application, or DMJ70H1D3SJ3 equivalent, this page delivers verified electrical parameters, TO251 terminal mapping, thermal resistance (R_ΘJC = 3.0°C/W), avalanche energy rating (E_AS = 40mJ), and real-world use context for industrial power design.

Technical Context

This MOSFET employs planar silicon technology optimized for high-voltage blocking and low conduction loss trade-off. Its 700V BVDSS rating supports universal-input AC-DC front-end designs, while gate threshold voltage (V_GS(TH) = 2–4V) ensures reliable turn-on with standard 10V gate drivers.

Dynamic characteristics include Q_G = 13.9nC and t_R = 11.6ns, enabling efficient hard-switching operation up to ~100kHz in flyback and forward topologies. Body diode recovery (t_RR = 212ns @ T_J = 25°C) is characterized for synchronous rectification evaluation.

Key Specifications

Parameter	Value and Actual Design Meaning
BVDSS	700V - Supports 400V DC bus with 75% derating margin for surge and ringing in offline SMPS.
RDS(ON)	1.3Ω @ VGS = 10V - Delivers ≤6.2W conduction loss at 4.6A, suitable for thermally constrained PCB layouts.
ID (TC=25°C)	4.6A - Continuous current capability with infinite heatsink; derates to 2.9A at TC = +100°C.
CISS	351pF - Low input capacitance reduces gate drive power and improves switching speed stability.
EAS	40mJ - Avalanche-rated for unclamped inductive switching events in relay drivers and solenoid controls.
RΘJC	3.0°C/W - Enables direct mounting to heatsink; junction-to-case thermal path dominates system cooling design.
tRR	212ns - Body diode reverse recovery time measured at IS = 5A, dI/dt = 100A/μs, TJ = 25°C.

Pinout & Package

Package: TO251 (Type TH), single-gull-wing leaded surface-mount package with exposed drain pad on bottom side. Molded plastic body, UL 94V-0 rated, matte tin annealed terminals.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control electrode; requires ≥10V drive for full enhancement; max ±30V rating limits driver IC selection.
D	Drain	High-side switch node; electrically connected to exposed metal pad; must be routed with creepage/clearance for 700V isolation.
S	Source	Reference node for gate drive; tied to power ground in low-side configuration; carries full load current and body diode return path.

Key Features

Feature	Design Value
Low R_DS(ON) at 700V	1.3Ω enables <6W conduction loss at 4.6A, reducing heatsink size vs. higher-R_DS(ON) alternatives.
High BVDSS with tight distribution	Guaranteed 700V breakdown minimizes overvoltage risk in 380–400V DC link applications without extra snubbing.
Low C_ISS and Q_G	351pF / 13.9nC allows clean 100kHz switching with minimal gate driver stress and EMI generation.
Avalanche-rated operation	40mJ E_AS supports robustness in inductive load switching without external clamping diodes.
RoHS 3 & "Green" compliant	<900ppm Br, <900ppm Cl, <1000ppm Sb meets automotive and industrial environmental compliance requirements.

Applications

Motor Controls

Backlighting

Use Scenario: Brushed DC motor drive in HVAC blower modules with 24–48V supply and PWM frequency up to 20kHz.

IC Role / Device Role / Timing Role: High-side or low-side power switch controlling motor current flow; handles repetitive 4.6A peak loads.

Use Value: Low R_DS(ON) reduces I²R heating during continuous duty, extending motor driver board lifetime in sealed enclosures.

Use Scenario: CCFL or LED backlight in industrial HMIs requiring high-voltage boost conversion (≥600V).

IC Role / Device Role / Timing Role: Primary-side switch in resonant half-bridge inverters driving transformer-coupled lamp circuits.

Use Value: 700V BVDSS accommodates reflected voltage spikes from transformer leakage inductance without clamping.

DC-DC Converters

Power Management Functions

Use Scenario: 30W offline flyback converter for industrial sensor power supplies with universal AC input (85–265VAC).

IC Role / Device Role / Timing Role: Main power switch operating in discontinuous conduction mode (DCM) at 65kHz.

Use Value: 40mJ avalanche energy rating tolerates output short-circuit events without failure during fault recovery cycles.

Use Scenario: Power sequencing and hold-up in programmable logic controllers (PLCs) with 24V backup rail.

IC Role / Device Role / Timing Role: Hold-up switch isolating main supply from supercapacitor bank during brownout conditions.

Use Value: Low gate charge (13.9nC) enables fast turn-on/off for precise timing control of energy transfer windows.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMJ70H1D4SJ3	R_DS(ON) = 1.0Ω @ V_GS = 10V (lower), ID = 5.2A, same TO251 package and 700V rating.	Higher current handling and lower conduction loss; preferred where thermal headroom is limited.	Select when upgrading from DMJ70H1D3SJ3 for improved efficiency at same footprint.
STP7NK70ZFP	700V, R_DS(ON) = 1.4Ω @ V_GS = 10V, TO220FP package, higher R_ΘJA (60°C/W vs. 79°C/W).	Through-hole mounting; less suitable for dense SMT layouts but offers higher single-pulse avalanche rating (E_AS = 120mJ).	Choose for legacy through-hole designs or where higher single-event ruggedness outweighs SMT advantages.

Compared with DMJ70H1D3SJ3, DMJ70H1D4SJ3 delivers lower conduction loss in identical layout, while STP7NK70ZFP trades SMT compatibility for greater avalanche margin and thermal mass-critical for infrequent surge events in industrial mains-connected systems.

Availability

DMJ70H1D3SJ3 is available at Aetrix Electronics and suitable for motor controls, backlighting, and DC-DC converters requiring stable component supply despite its obsolete status-inventory is secured for legacy program continuity.

Supply support for DMJ70H1D3SJ3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.

This MOSFET belongs to Diodes' high-voltage power transistor product line, engineered for industrial and consumer power conversion where reliability under sustained high-voltage stress is critical.

FAQ

Is DMJ70H1D3SJ3 still in active production?

No-DMJ70H1D3SJ3 is officially obsolete and discontinued per Diodes' documentation (Rev. 6-4, November 2022). Aetrix Electronics maintains final-sourced inventory for legacy program support, but no new production runs are planned. Customers should evaluate DMJ70H1D4SJ3 as the designated replacement part.

What is the maximum safe operating temperature for DMJ70H1D3SJ3?

The absolute maximum junction temperature is +150°C, with storage range from –55°C to +150°C. Derated continuous drain current drops to 2.9A at T_C = +100°C. Thermal design must ensure R_ΘJC = 3.0°C/W path to heatsink and account for ambient rise in enclosed systems.

Can DMJ70H1D3SJ3 be used in synchronous rectification?

No-it is not optimized for synchronous rectification due to relatively high body diode forward voltage (V_SD = 0.9–1.3V) and slow reverse recovery (t_RR = 212ns). Its primary role is as a controlled switch in hard-switched topologies; dedicated SR controllers require faster, lower-V_F FETs.

Does DMJ70H1D3SJ3 meet AEC-Q101 qualification?

No-the datasheet explicitly states that automotive-grade qualification (AEC-Q100/101/104/200) requires special change control and PPAP capability, which are not included for this part. It is intended for industrial and commercial applications only.

DMJ70H1D3SJ3 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 700 V

Current - Continuous Drain (Id) @ 25°C:: 4.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.3Ohm @ 2.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 13.9 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 351 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 41W (Tc)

Operating Temperature:: -55°C ~ 155°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-251

DMJ70H1D3SJ3 FAQ

1.How can I place an order for DMJ70H1D3SJ3 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMJ70H1D3SJ3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMJ70H1D3SJ3 reliable?

The price and inventory of DMJ70H1D3SJ3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMJ70H1D3SJ3 is usually 5 days.

3.What payment methods are accepted for DMJ70H1D3SJ3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMJ70H1D3SJ3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMJ70H1D3SJ3?

DMJ70H1D3SJ3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMJ70H1D3SJ3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMJ70H1D3SJ3?

For technical support, including DMJ70H1D3SJ3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMJ70H1D3SJ3 requirements.

6.How does Aetrix verify that DMJ70H1D3SJ3 is sourced from the original manufacturer or authorized distributors?

All DMJ70H1D3SJ3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMJ70H1D3SJ3 meets industry standards.

7.What is the process for return or replacement of DMJ70H1D3SJ3?

All DMJ70H1D3SJ3 units undergo pre-shipment inspection (PSI). If there is an issue with DMJ70H1D3SJ3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMJ70H1D3SJ3 part is unused and in its original packaging.

Return procedure for DMJ70H1D3SJ3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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