Diodes Incorporated DMJ70H1D5SV3

Overview

DMJ70H1D5SV3 from Diodes Incorporated is an N-channel enhancement-mode MOSFET optimized for high-voltage, medium-current power switching in offline AC/DC converters and flyback topologies. It delivers 700 V drain-source breakdown voltage, 1.5 Ω R_DS(ON) at V_GS = 10 V, and 5.0 A continuous drain current at T_C = +25°C - enabling compact, high-efficiency adaptor and LCD TV power supplies.

For engineers reviewing the DMJ70H1D5SV3 datasheet, DMJ70H1D5SV3 pinout, DMJ70H1D5SV3 application, or DMJ70H1D5SV3 equivalent, key selection criteria include its 700 V BVDSS rating, low input capacitance (316 pF), TO251 (HE1) package thermal resistance (R_θJC = 1.8 °C/W), and body diode recovery performance (t_RR = 190 ns at T_J = 25°C).

Technical Context

This MOSFET employs a planar silicon process to achieve stable high-voltage blocking while maintaining low gate charge (Q_g = 9.8 nC) and fast switching transitions (t_r = 10 ns, t_f = 5 ns). Its gate threshold voltage (V_GS(TH) = 2–4 V) supports standard 10 V gate drive, and its body diode exhibits controlled reverse recovery (Q_RR = 1.4 µC) suitable for quasi-resonant operation.

The device is characterized for operation up to +150°C junction temperature with normalized R_DS(ON) variation under 1.5× from –55°C to +150°C. Thermal design is supported by a low R_θJC of 1.8 °C/W and defined SOA limits across pulse widths from 1 µs to DC under V_GS = 10 V.

Key Specifications

Pinout & Package

Package: TO251 (Type HE1), surface-mount molded plastic case with matte tin–annealed copper leadframe; UL 94V-0 rated; weight ≈ 0.33 g.

Key Features

Applications

Availability

DMJ70H1D5SV3 is available at Aetrix Electronics and suitable for adaptor power supplies, LCD/PDP TV main power stages, and industrial LED lighting ballasts requiring stable component supply and long-term manufacturability assurance.

Supply support for DMJ70H1D5SV3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, computing, and consumer markets.

This MOSFET belongs to Diodes' high-voltage power transistor product line, engineered specifically for energy-efficient offline switching applications where 600–800 V breakdown capability and low conduction loss are critical.

FAQ

What is the maximum safe operating voltage for DMJ70H1D5SV3 in continuous DC conditions?

The absolute maximum drain-source voltage (V_DSS) is 700 V DC, as specified in the Absolute Maximum Ratings table. Operation above this value risks avalanche-induced failure even with short-duration transients. Designers must ensure peak repetitive voltage (including ringing and overshoot) remains below 630 V for 20% derating margin in industrial-grade systems.

Can DMJ70H1D5SV3 be used with 5 V gate drive?

No - the gate threshold voltage (V_GS(TH)) ranges from 2.0 to 4.0 V, but full enhancement requires ≥10 V to achieve the specified R_DS(ON) of 1.5 Ω. At 5 V gate drive, R_DS(ON) increases to ~3.2 Ω (per Figure 4), doubling conduction loss and risking thermal runaway at rated current.

Is the TO251 (HE1) package compatible with standard TO251 footprint layouts?

Yes - the DMJ70H1D5SV3 uses the industry-standard TO251 (Type HE1) outline with documented dimensions (e.g., D = 6.10 mm, E = 6.60 mm, L = 4.10 mm). Its pin configuration (G-D-S) matches JEDEC MO-127 and is mechanically identical to other TO251 MOSFETs, enabling drop-in replacement in existing layouts.

Does this part have avalanche energy rating, and how is it applied in design?

Yes - the datasheet specifies E_AS = 7.5 mJ (L = 60 mH) and I_AS = 0.5 A. This rating applies only to single-pulse, unclamped inductive switching events (e.g., transformer leakage energy). It is not intended for repetitive avalanche operation and must be verified per application using the SOA curve (Figure 12) and thermal transient data (Figure 13).