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Diodes Incorporated DMJ70H600HCT
- Part No.:
- DMJ70H600HCT
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
DMJ70H600HCT.pdf
- Description:
- MOSFET BVDSS: 651V~800V TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:5,680
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Product details
Overview
DMJ70H600HCT from Diodes Incorporated is a 700V N-channel enhancement-mode power MOSFET in TO220AB package, rated for 8.5A continuous drain current at TC = +25°C, with RDS(ON) ≤ 0.6Ω at VGS = 10V and BVDSS = 700V. It delivers low conduction loss and fast switching for high-efficiency offline power conversion stages in industrial AC-DC adapters.
For engineers reviewing the DMJ70H600HCT datasheet, DMJ70H600HCT pinout, DMJ70H600HCT application, or DMJ70H600HCT equivalent, key selection criteria include its 1.2°C/W junction-to-case thermal resistance, 570pF input capacitance, 17.4nC total gate charge, avalanche energy rating of 97mJ, and suitability for hard-switched flyback and LLC resonant converters operating up to 150°C junction temperature.
Technical Context
This MOSFET employs planar silicon technology optimized for high-voltage blocking and low RDS(ON) trade-off, supporting unidirectional power flow in primary-side switching applications. Its gate threshold voltage (2–5V) enables compatibility with standard 10V gate drivers, while body diode reverse recovery time (194ns) and QRR (1.6µC) are characterized for discontinuous conduction mode operation.
The device exhibits normalized RDS(ON) variation of ≤1.8× from –55°C to +150°C at ID = 2.4A, and safe operating area (SOA) is defined for single-pulse and DC conditions with TC = 25°C on infinite heatsink. Thermal transient impedance data supports thermal design under pulsed load profiles with duty cycles from 0.005 to 0.9.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| BVDSS | 700V - Withstands full mains rectified voltage in universal-input 85–265VAC SMPS designs without breakdown. |
| RDS(ON) Max | 0.6Ω @ VGS = 10V - Limits conduction loss to ≤4.3W at 8.5A, enabling compact heatsink sizing in 65–100W adapters. |
| ID Continuous | 8.5A @ TC = +25°C - Supports peak power delivery in 70W+ offline converters when mounted on adequate heatsink. |
| Qg Total | 17.4nC - Determines gate drive power requirement (~1.74mW per MHz switching) and influences driver IC selection. |
| EAS | 97mJ - Enables robustness against inductive switching transients in relay-driving or motor-control snubberless layouts. |
| RθJC | 1.2°C/W - Allows direct thermal path modeling from junction to heatsink surface, critical for reliability validation. |
| tRR / QRR | 194ns / 1.6µC - Quantifies body diode recovery behavior during ZVS transitions, affecting EMI and efficiency in resonant topologies. |
Pinout & Package
Package: TO220AB (Type TH), through-hole, 3-terminal plastic-molded case with copper leadframe, matte tin annealed finish, UL 94V-0 rated molding compound, weight ≈2.24g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | High-side power switch node | Electrically connected to metal tab - must be isolated from heatsink unless referenced to system ground; primary thermal path. |
| Source | Return path for load current | Reference node for gate drive; connects to power ground plane; carries full switched current and body diode conduction. |
| Gate | Control terminal | High-impedance MOS control input; requires low-inductance routing and RC snubber for dV/dt immunity in high-noise environments. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) | 0.47Ω typical at VGS = 10V/ID = 2.4A - reduces I²R losses by >25% vs. legacy 700V MOSFETs in same package. |
| Fast switching speed | tD(ON) = 20ns, tF = 37ns - enables >150kHz operation in quasi-resonant flyback without excessive switching loss penalty. |
| Low input capacitance | Ciss = 570pF - lowers gate drive power and improves noise immunity in high-dV/dt primary-side circuits. |
| Avalanche-rated | EAS = 97mJ - eliminates need for external clamping in inductive load switching where energy absorption is required. |
| Green compliance | Halogen- and antimony-free, RoHS 3 compliant - meets IPC-1752A material declaration requirements for automotive and industrial OEMs. |
Applications
| Industrial AC-DC Adapters | Motor Drive Inverters |
|---|---|
|
Use Scenario: 85–265VAC input, 48V/1.5A output flyback converter for PLC I/O modules. IC Role / Device Role / Timing Role: Primary-side high-voltage switch controlling energy transfer during each switching cycle. Use Value: 0.6Ω RDS(ON) limits conduction loss to <3.5W at full load, enabling natural-convection cooling in sealed enclosures. |
Use Scenario: 3-phase BLDC inverter stage in HVAC fan controller with 24V–48V DC bus. IC Role / Device Role / Timing Role: Low-side switching element in half-bridge configuration driving phase windings. Use Value: 194ns body diode tRR ensures clean commutation with minimal shoot-through risk during PWM dead-time intervals. |
| DC-DC Boost Converters | LED Driver Power Stages |
|
Use Scenario: 12V-to-48V boost converter for telecom remote radio units. IC Role / Device Role / Timing Role: Main power switch regulating output voltage via duty-cycle control. Use Value: 700V BVDSS provides 2.5× margin over 48V bus transients, eliminating need for TVS clamping on switch node. |
Use Scenario: Constant-current LED driver for street lighting with 300V DC bus derived from rectified line. IC Role / Device Role / Timing Role: High-side switch in buck-derived topology managing LED string current. Use Value: 1.2°C/W RθJC allows direct mounting to aluminum housing, achieving <90°C max junction temp at 75°C ambient. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP7NK70ZFP | RDS(ON) = 0.95Ω (higher), EAS = 125mJ (higher), TO220FP package (shorter leads, lower Ld) | Better avalanche ruggedness but higher conduction loss; suited for infrequent surge events over sustained efficiency. | Select when system-level surge testing exceeds IEC 61000-4-5 Level 4 and thermal margin is available. |
| IXTH7N70L2 | RDS(ON) = 0.75Ω, Qg = 22nC (higher), TO247 package (lower RθJC = 0.8°C/W) | Superior thermal performance but larger footprint and higher gate drive demand; requires stronger driver. | Select when board space permits TO247 and junction temperature must stay below 125°C under 100% load. |
Compared with STP7NK70ZFP and IXTH7N70L2, DMJ70H600HCT offers the lowest RDS(ON) in TO220AB, optimal for thermally constrained 65–85W designs where gate drive capability is limited and cost-sensitive volume production is required.
Availability
DMJ70H600HCT is available at Aetrix Electronics and suitable for industrial AC-DC adapters, motor control inverters, and LED driver power stages requiring stable component supply across multi-year production programs.
Supply support for DMJ70H600HCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, serving industrial, computing, consumer, and communications markets with broad portfolio and manufacturing scale.
This MOSFET belongs to Diodes' high-voltage power transistor product line, engineered specifically for efficiency-critical offline power conversion in cost-sensitive, thermally constrained applications up to 100W.
FAQ
Is DMJ70H600HCT qualified for automotive applications?
No - DMJ70H600HCT is not AEC-Q101 qualified. Diodes states that automotive-grade variants require specific change control, PPAP capability, and IATF 16949 manufacturing certification; this part is intended for industrial and commercial use only. Automotive designs must specify explicitly qualified alternatives such as DMTH70H600HCT.
What is the maximum recommended PCB pad size for thermal performance?
The datasheet specifies "minimum recommended pad layout" for FR-4 boards with 2oz copper, yielding PD = 2.3W and RθJA = 55°C/W. For improved thermal performance, Diodes recommends maximizing copper area connected to the Drain tab using multiple thermal vias to inner-layer ground planes - exact dimensions are provided in Application Note AN-4001.
Can DMJ70H600HCT be used in synchronous rectification?
No - it is an N-channel enhancement-mode MOSFET with no integrated Schottky body diode optimization or low VSD specification for synchronous rectifier use. Its body diode VSD = 0.8–1.3V at IS = 4.6A and tRR = 194ns make it unsuitable for secondary-side SR in high-frequency LLC or forward converters.
Does the TO220AB package have insulated mounting options?
The TO220AB (Type TH) package has a conductive metal tab electrically connected to the Drain terminal. Insulation requires mica or ceramic washers plus shoulder washers - Diodes does not provide built-in isolation. Mounting without isolation to a grounded heatsink creates a short circuit; always verify isolation method with creepage/clearance requirements per IEC 62368-1.
DMJ70H600HCT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 700 V
- Current - Continuous Drain (Id) @ 25°C:
- 8.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 600mOhm @ 2.4A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 17.4 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 570 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.3W (Ta), 104W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB (Type TH)
DMJ70H600HCT FAQ
1.How can I place an order for DMJ70H600HCT through Aetrix?
Please submit a Request for Quotation (RFQ) for DMJ70H600HCT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMJ70H600HCT reliable?
The price and inventory of DMJ70H600HCT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMJ70H600HCT is usually 5 days.
3.What payment methods are accepted for DMJ70H600HCT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMJ70H600HCT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMJ70H600HCT?
DMJ70H600HCT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMJ70H600HCT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMJ70H600HCT?
For technical support, including DMJ70H600HCT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMJ70H600HCT requirements.
6.How does Aetrix verify that DMJ70H600HCT is sourced from the original manufacturer or authorized distributors?
All DMJ70H600HCT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMJ70H600HCT meets industry standards.
7.What is the process for return or replacement of DMJ70H600HCT?
All DMJ70H600HCT units undergo pre-shipment inspection (PSI). If there is an issue with DMJ70H600HCT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMJ70H600HCT part is unused and in its original packaging.
Return procedure for DMJ70H600HCT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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