Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMJ70H600HK3-13

Name: DMJ70H600HK3-13
Brand: Diodes Incorporated
SKU: DMJ70H600HK3-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: DMJ70H600HK3-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: DMJ70H600HK3-13.pdf

Description:: MOSFET BVDSS: 651V~800V TO252 T&

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:7,749

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

DMJ70H600HK3 from Diodes Incorporated is a 700V N-channel enhancement-mode MOSFET in TO252 (DPAK) package, rated for 7.6A continuous drain current at T_C = +25°C, with R_DS(ON) = 0.45Ω (typ) @ V_GS = 10V. It delivers low gate charge (Q_G = 17.4nC), low input capacitance (C_iss = 570pF), and robust avalanche energy rating (E_AS = 97mJ), targeting high-efficiency AC-DC converters and motor control stages.

For engineers reviewing the DMJ70H600HK3 datasheet, DMJ70H600HK3 pinout, DMJ70H600HK3 application, or DMJ70H600HK3 equivalent, key selection criteria include its 700V BVDSS rating, thermal resistance R_θJC = 1.4°C/W, body diode reverse recovery time t_RR = 194ns, and RoHS-compliant matte tin annealed terminals - all critical for reliable high-voltage switching in thermally constrained designs.

Technical Context

This MOSFET employs planar silicon process technology optimized for high-voltage operation with controlled threshold voltage (V_GS(TH) = 2–5V) and stable R_DS(ON) across -55°C to +150°C junction temperature range. Its low C_oss (628pF) and Crss (40pF) support fast switching with reduced Miller effect.

The device integrates a monolithic body diode with V_SD = 0.8–1.3V @ I_S = 4.6A and Q_RR = 1.6µC, enabling efficient freewheeling in hard-switched topologies. Thermal performance is defined by R_θJC = 1.4°C/W and R_θJA = 45°C/W on FR-4 PCB with 1-inch² copper pad.

Key Specifications

Parameter	Value and Actual Design Meaning
BVDSS	700V - supports primary-side switching in universal-input AC-DC SMPS up to 400V DC bus with margin.
RDS(ON) max	0.6Ω @ VGS = 10V - enables <1.8W conduction loss at 7.6A, reducing heatsink requirements.
ID (TC = 25°C)	7.6A - continuous current capability when mounted on infinite heatsink, suitable for 60–100W power stages.
QG	17.4nC - determines gate drive power and switching speed; compatible with standard 1A peak gate drivers.
EAS	97mJ - withstands single-pulse inductive energy without failure, critical for relay/snubberless flyback designs.
tRR	194ns - limits diode reverse recovery losses and EMI generation during turn-on of synchronous rectifiers.
RθJC	1.4°C/W - allows direct thermal coupling to heatsink; 60°C rise at 90W PD enables compact thermal design.

Pinout & Package

Package: TO252 (DPAK), surface-mount, 3-terminal plastic package with exposed drain pad for thermal dissipation. Molded green compound (UL 94V-0), matte tin annealed terminals, moisture sensitivity level 3.

Pin/Terminal	Circuit Role	Design Meaning
D (Drain)	Main current path output terminal	Connected to exposed copper pad on bottom; primary thermal path to PCB heatsink area.
G (Gate)	Control electrode	High-impedance input requiring <2.5Ω gate resistance to suppress ringing; sensitive to ESD.
S (Source)	Reference node for gate drive and current return	Common connection point for load return and gate driver ground; defines VGS reference.

Key Features

Feature	Design Value
Low RDS(ON) with high BVDSS	0.45Ω typ @ 700V - achieves conduction efficiency unattainable with lower-voltage MOSFETs in same package.
Optimized switching parameters	Ciss = 570pF, Crss = 40pF - reduces gate drive loss and improves dV/dt immunity in high-frequency PFC stages.
Robust avalanche capability	EAS = 97mJ - eliminates need for external snubbers in inductive load switching applications.
Thermally enhanced package	RθJC = 1.4°C/W - enables >36W continuous dissipation at T_C = 100°C without forced air.
Green and RoHS-compliant construction	Halogen-free, antimony-free, lead-free - meets automotive and industrial environmental compliance mandates.

Applications

AC-DC Power Supplies

Motor Control Stages

Use Scenario: Primary-side switch in 65–100W offline flyback or quasi-resonant converters with universal AC input (85–265VAC).

IC Role / Device Role / Timing Role: High-voltage power switch driven by PWM controller; operates at 65–135kHz with hard-switched or valley-switched gate timing.

Use Value: 700V rating accommodates reflected output voltage plus line surge margin; low Q_G minimizes driver loss at high frequency.

Use Scenario: Half-bridge upper-leg switch in 24–48V BLDC motor drives for HVAC blowers and industrial fans.

IC Role / Device Role / Timing Role: High-side power switch synchronized with bootstrap gate driver; handles 7.6A phase current with 100ns dead-time constraints.

Use Value: Low C_oss and Crss reduce shoot-through risk; t_RR < 200ns ensures clean commutation under 100A/μs dI/dt.

LED Backlight Drivers

Industrial Power Factor Correction

Use Scenario: Boost switch in constant-current LED backlight drivers for commercial displays (100–200W).

IC Role / Device Role / Timing Role: Fast-switching power transistor in continuous conduction mode (CCM) boost stage; gated at 100–250kHz.

Use Value: R_DS(ON) stability over temperature ensures consistent LED current regulation; low Q_GD/Q_GS ratio improves duty-cycle linearity.

Use Scenario: Switching element in active PFC boost stages for industrial UPS and server PSUs (300–500W).

IC Role / Device Role / Timing Role: Main power switch operating in critical conduction mode (CrM) or continuous conduction mode (CCM); driven by dedicated PFC IC.

Use Value: 97mJ EAS rating absorbs inductive kickback during zero-crossing events; low R_DS(ON) maintains >96% efficiency at full load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP7NK70ZFP	700V, R_DS(ON) = 0.95Ω @ 10V, Q_G = 25nC, TO220FP package	Higher R_DS(ON) and Q_G; through-hole mounting requires larger board area and manual assembly	Preferred where legacy TO220 footprint compatibility is required and thermal budget allows higher conduction loss.
IXTP70N10P	100V, R_DS(ON) = 0.018Ω @ 10V, TO220 package, not 700V-rated	Cannot replace in 700V applications; only viable in low-voltage secondary-side or DC-DC stages	Not a functional substitute for primary-side high-voltage switching; use only in <120V DC systems.

Compared with STP7NK70ZFP, DMJ70H600HK3 offers 37% lower R_DS(ON) and 30% lower Q_G in a surface-mount package, enabling higher power density and efficiency in space-constrained AC-DC designs; IXTP70N10P is electrically incompatible for 700V roles due to insufficient breakdown rating.

Availability

DMJ70H600HK3 is available at Aetrix Electronics and suitable for AC-DC power supplies, motor control stages, and LED backlight drivers requiring stable component supply, long-term lifecycle support, and traceable green manufacturing.

Supply support for DMJ70H600HK3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal devices, with design, manufacturing, and distribution operations across Asia, the Americas, and Europe.

This MOSFET belongs to Diodes' high-voltage power portfolio, engineered specifically for energy-efficient switching in industrial, computing, and consumer power conversion systems where reliability at elevated voltage and temperature is mandatory.

FAQ

What is the maximum safe operating junction temperature for DMJ70H600HK3?

The absolute maximum junction temperature is +150°C, with derated continuous drain current of 4.8A at T_C = +100°C. Operation above this limit risks permanent parametric shift or thermal runaway; thermal design must ensure T_J remains ≤150°C under worst-case ambient and power dissipation conditions.

Is DMJ70H600HK3 qualified for automotive applications?

No - DMJ70H600HK3 is not AEC-Q101 qualified. Diodes offers automotive-grade variants (e.g., DMJ70H600HK3Q) with PPAP documentation, IATF 16949 manufacturing, and extended temperature validation; this part is intended for industrial and commercial power applications only.

Can DMJ70H600HK3 be used in synchronous rectification?

No - it is a standard N-channel MOSFET with non-optimized body diode characteristics (t_RR = 194ns, Q_RR = 1.6µC). For synchronous rectification, Diodes recommends dedicated SR controllers paired with low-Q_RR, logic-level MOSFETs such as AP9981GH.

What is the recommended gate resistor value for hard-switched operation at 100kHz?

A 10Ω to 22Ω gate resistor is recommended to balance switching speed and gate oscillation suppression. With Q_G = 17.4nC and typical 12V gate drive, this yields ~200ns–400ns turn-on delay and <50ns rise time, minimizing overlap loss while maintaining EMI compliance in 100kHz flyback designs.

DMJ70H600HK3-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 700 V

Current - Continuous Drain (Id) @ 25°C:: 7.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 600mOhm @ 2.4A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 17.4 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 570 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 90W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252 (DPAK)

DMJ70H600HK3-13 FAQ

1.How can I place an order for DMJ70H600HK3-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMJ70H600HK3-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMJ70H600HK3-13 reliable?

The price and inventory of DMJ70H600HK3-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMJ70H600HK3-13 is usually 5 days.

3.What payment methods are accepted for DMJ70H600HK3-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMJ70H600HK3-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMJ70H600HK3-13?

DMJ70H600HK3-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMJ70H600HK3-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMJ70H600HK3-13?

For technical support, including DMJ70H600HK3-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMJ70H600HK3-13 requirements.

6.How does Aetrix verify that DMJ70H600HK3-13 is sourced from the original manufacturer or authorized distributors?

All DMJ70H600HK3-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMJ70H600HK3-13 meets industry standards.

7.What is the process for return or replacement of DMJ70H600HK3-13?

All DMJ70H600HK3-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMJ70H600HK3-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMJ70H600HK3-13 part is unused and in its original packaging.

Return procedure for DMJ70H600HK3-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…

2026-08-11 LDO Regulator: Dropout Voltage, Noise, PSRR and Power Dissipation

LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…