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Diodes Incorporated DMJ70H601SK3-13
- Part No.:
- DMJ70H601SK3-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
DMJ70H601SK3-13.pdf
- Description:
- MOSFET N-CHANNEL 700V 8A TO252
- Quantity:
- Payment:
- Shipping:
Inventory:8,467
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Product details
Overview
DMJ70H601SK3 from Diodes Incorporated is a 700V N-channel enhancement-mode MOSFET in TO252 (DPAK) package, rated for 8A continuous drain current at TC = +25°C, with RDS(ON) ≤ 0.6Ω at VGS = 10V and BVDSS = 700V. It delivers low gate charge (Qg = 20.9 nC), fast switching (tR = 23 ns), and robust avalanche energy rating (EAS = 86 mJ), targeting high-efficiency offline SMPS in LCD/PDP TV power supplies.
For engineers reviewing the DMJ70H601SK3 datasheet, DMJ70H601SK3 pinout, DMJ70H601SK3 application, or DMJ70H601SK3 equivalent, key selection criteria include its 700V breakdown voltage, 0.6Ω on-resistance at 10V gate drive, TO252 thermal performance (RθJC = 1.0°C/W), body diode recovery characteristics (tRR = 261 ns), and suitability for 65–100 kHz flyback and PFC stages.
Technical Context
This MOSFET employs a planar silicon process optimized for high-voltage hard-switching applications. Its gate threshold voltage (VGS(TH) = 2–4 V) enables reliable turn-on with standard 10V gate drivers, while low Crss (8 pF) and Ciss (686 pF) support stable operation under high dv/dt conditions up to 7 V/ns.
The device integrates a fast-recovery body diode (tRR = 261 ns, QRR = 3.0 µC) and supports pulsed drain currents up to 15 A. Thermal design leverages the TO252 package's low junction-to-case resistance (1.0°C/W) for direct heatsink mounting in compact AC-DC adapters and lighting ballasts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| BVDSS | 700 V - Withstands full mains rectified voltage in universal-input (85–265 VAC) flyback converters without derating. |
| RDS(ON) | 0.6 Ω @ VGS = 10V - Enables <1.5 W conduction loss at 8A ID, critical for >85% efficiency in 30–65 W adapters. |
| ID (TC = +25°C) | 8 A - Sustains full-load current in single-transistor PFC and main switch positions with minimal heatsinking. |
| EAS | 86 mJ - Absorbs inductive energy during hard-switched turn-off, supporting robust operation in non-resonant topologies. |
| Qg / Qgd | 20.9 nC / 9.4 nC - Low gate-drive power requirement (<100 mW at 100 kHz) and reduced Miller-induced switching instability. |
| tRR / QRR | 261 ns / 3.0 µC - Limits reverse-recovery losses and EMI in discontinuous conduction mode (DCM) flyback designs. |
| RθJC | 1.0 °C/W - Allows direct PCB copper pad thermal coupling to external heatsink, enabling 125 W PD at TC = +25°C. |
Pinout & Package
Package: TO252 (DPAK), surface-mount, thermally enhanced plastic case with exposed drain pad. Dimensions per Diodes Inc. outline drawing: D = 6.10 mm, E = 6.60 mm, H = 10.30 mm, L = 1.60 mm, b3 = 5.33 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D (Drain) | Main high-side power path terminal | Connected to primary winding of transformer or bulk capacitor; electrically and thermally tied to exposed backside pad. |
| G (Gate) | Control input for channel modulation | Low-input-capacitance node (Ciss = 686 pF); requires <10 Ω series resistor to damp ringing in high-dv/dt environments. |
| S (Source) | Reference node for gate drive and current sensing | Common return for load current and gate driver ground; must be routed with low inductance to minimize shoot-through risk. |
Key Features
| Feature | Design Value |
|---|---|
| 700V VDSS rating | Supports direct connection to 600 V DC bus in industrial AC-DC front-ends without series stacking or voltage dividers. |
| Low RDS(ON) × Qg figure-of-merit | 356 Ω·nC - Balances conduction and switching losses for optimal efficiency across 65–130 kHz operating range. |
| Fast body diode recovery | tRR = 261 ns at TJ = +25°C - Reduces cross-conduction loss and EMI in quasi-resonant and DCM flyback controllers. |
| RoHS-compliant & Halogen-free | Meets EU RoHS 3 (2015/863/EU) and Diodes Inc. "Green" definition (<900 ppm Br, <900 ppm Cl, <1000 ppm Sb). |
| TO252 thermal interface | RθJC = 1.0°C/W - Enables >50 W dissipation with minimal external heatsink when mounted on 1-inch² 2 oz copper pad. |
Applications
| Adaptor Power Supply | LCD & PDP TV SMPS |
|---|---|
|
Use Scenario: Universal-input (85–265 VAC), 36–65 W wall adapter with flyback topology and primary-side regulation. IC Role / Device Role: Primary-side power switch handling full mains-referred drain voltage and peak currents up to 12 A. Use Value: 700V BVDSS eliminates need for voltage clamping networks; 0.6Ω RDS(ON) maintains >87% efficiency at full load without forced air cooling. |
Use Scenario: Main power supply for 32–55 inch LCD TVs, delivering +12 V, +24 V, and standby rails via multi-output forward converter. IC Role / Device Role: High-side switch in active clamp forward or asymmetrical half-bridge configuration. Use Value: 86 mJ EAS withstands clamp circuit energy spikes; low Crss ensures stable gate control under 500 V/ns transient conditions. |
| LED Lighting Driver | Industrial AC-DC Module |
|
Use Scenario: Constant-current LED driver for commercial downlights (20–40 W), using buck-boost or SEPIC topology. IC Role / Device Role: Switching element managing 400 V DC link and regulating output current through inductor-based feedback. Use Value: Fast tRR (261 ns) minimizes diode conduction loss during dead-time; Qg = 20.9 nC allows use with low-power gate drivers like UCC27531. |
Use Scenario: DIN-rail mountable 24 V/5 A industrial power module accepting 3-phase 400 VAC input via bridge rectifier and boost PFC stage. IC Role / Device Role: Boost switch in continuous conduction mode (CCM) PFC controller, operating at 65 kHz with 10 A peak current. Use Value: 6.4 A ID at TC = +100°C ensures thermal headroom under full-load ambient; RθJC = 1.0°C/W enables direct heatsink attachment without thermal interface pads. |
Availability
DMJ70H601SK3 is available at Aetrix Electronics and suitable for LCD TV power supplies, universal AC-DC adapters, LED lighting drivers, and industrial AC-DC modules requiring stable component supply and long-term manufacturability assurance.
Supply support for DMJ70H601SK3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal devices, with design centers in Asia, Europe, and the US, and manufacturing in China, Taiwan, and Malaysia.
This MOSFET belongs to Diodes' high-voltage power transistor product line, engineered specifically for energy-efficient offline power conversion in consumer and industrial applications where reliability at 700V stress levels is mandatory.
FAQ
Is DMJ70H601SK3 suitable for use in automotive applications?
No. DMJ70H601SK3 is not AEC-Q101 qualified and lacks automotive-grade screening, temperature cycling validation, or PPAP documentation. Its specified operating range (−55°C to +150°C) does not reflect automotive qualification requirements, and Diodes Incorporated explicitly positions it for industrial and consumer power supplies-not vehicle subsystems.
What is the maximum recommended gate drive voltage for reliable operation?
The absolute maximum gate-source voltage is ±30 V, but the device is characterized and optimized for VGS = 10 V. Driving above 12 V yields diminishing RDS(ON) improvement while increasing gate oxide stress and risk of overvoltage transients-designs should use 10 V ±0.5 V with active clamping or Zener limiting.
Does this MOSFET have integrated ESD protection on the gate?
No. The datasheet does not specify on-chip gate ESD protection structures. External gate protection-such as a 12 V Zener diode between G and S, or RC snubber-must be implemented to prevent damage from human-body-model (HBM) or charged-device-model (CDM) events during assembly or system operation.
Can DMJ70H601SK3 replace older 600V MOSFETs like DMN6070LSD in existing designs?
No direct replacement: DMJ70H601SK3 has higher VDSS (700 V vs. 600 V) but higher RDS(ON) (0.6 Ω vs. 0.07 Ω) and different package (TO252 vs. SO8). Its 8 A ID rating is lower than DMN6070LSD's 70 A, making it unsuitable for low-voltage, high-current roles. It targets higher-voltage, moderate-current applications instead.
DMJ70H601SK3-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 700 V
- Current - Continuous Drain (Id) @ 25°C:
- 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 600mOhm @ 2.1A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 20.9 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 686 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 125W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252 (DPAK)
DMJ70H601SK3-13 FAQ
1.How can I place an order for DMJ70H601SK3-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMJ70H601SK3-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMJ70H601SK3-13 reliable?
The price and inventory of DMJ70H601SK3-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMJ70H601SK3-13 is usually 5 days.
3.What payment methods are accepted for DMJ70H601SK3-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMJ70H601SK3-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMJ70H601SK3-13?
DMJ70H601SK3-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMJ70H601SK3-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMJ70H601SK3-13?
For technical support, including DMJ70H601SK3-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMJ70H601SK3-13 requirements.
6.How does Aetrix verify that DMJ70H601SK3-13 is sourced from the original manufacturer or authorized distributors?
All DMJ70H601SK3-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMJ70H601SK3-13 meets industry standards.
7.What is the process for return or replacement of DMJ70H601SK3-13?
All DMJ70H601SK3-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMJ70H601SK3-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMJ70H601SK3-13 part is unused and in its original packaging.
Return procedure for DMJ70H601SK3-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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