Diodes Incorporated DMJ70H900HJ3

Overview

DMJ70H900HJ3 from Diodes Incorporated is a 700V N-channel enhancement-mode MOSFET in TO251 (Type TH) package, delivering 0.9Ω R_DS(ON) at V_GS = 10V, 7A continuous drain current at T_C = +25°C, and 68W power dissipation. It serves as a high-voltage switching element in offline power supplies, motor drives, and DC-DC converters requiring robust avalanche capability (E_AS = 50 mJ) and low input capacitance (C_iss = 603 pF).

For engineers reviewing the DMJ70H900HJ3 datasheet, DMJ70H900HJ3 pinout, DMJ70H900HJ3 application, or DMJ70H900HJ3 equivalent, this page provides verified electrical parameters, thermal performance data, gate charge characteristics (Q_g = 18.4 nC), safe operating area (SOA) limits, and real-world use context for industrial power design validation.

Technical Context

This MOSFET employs planar silicon technology optimized for high-voltage hard-switching applications. Its 700V BVDSS rating supports universal-input AC-DC front-end designs, while the 1.8°C/W junction-to-case thermal resistance enables efficient heatsink coupling in compact power stages.

The device exhibits tightly controlled gate threshold voltage (V_GS(TH) = 2–4V) and low reverse transfer capacitance (C_rss = 16 pF), enabling stable high-frequency operation with reduced Miller-induced shoot-through risk in half-bridge topologies.

Key Specifications

Pinout & Package

Package: TO251 (Type TH), surface-mount variant of TO-251 with single lead formed for PCB mounting. Molded green compound, UL 94V-0 rated, matte tin-plated copper leadframe.

Key Features

Applications

Availability

DMJ70H900HJ3 is available at Aetrix Electronics and suitable for motor control, backlighting, and DC-DC converters requiring stable component supply in industrial and commercial power systems.

Supply support for DMJ70H900HJ3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management and signal integrity solutions for industrial, computing, and consumer markets.

This MOSFET belongs to Diodes' high-voltage power transistor product line, engineered for efficiency-critical offline power conversion where ruggedness, low conduction loss, and repeatable avalanche performance are mandatory.

FAQ

Is DMJ70H900HJ3 suitable for use in 230VAC rectified applications?

Yes. With a 700V BVDSS rating and guaranteed avalanche energy of 50 mJ, it safely withstands peak rectified voltages up to 325V and absorbs transient energy from inductive loads without failure. Its SOA curve confirms single-pulse capability up to 10ms at 7A and 400V.

What is the maximum recommended gate drive voltage?

The absolute maximum gate-source voltage is ±30V, but the device is characterized and optimized for 10V drive. Driving above 12V yields diminishing R_DS(ON) improvement while increasing gate oxide stress and ESD vulnerability; 10V ensures optimal balance of on-resistance and reliability.

Does DMJ70H900HJ3 have a built-in body diode, and what are its key parameters?

Yes - it integrates a fast-recovery body diode with V_SD = 0.85–1.3V at 5A and t_RR = 239ns at di/dt = 100A/μs. This diode supports freewheeling in buck and flyback topologies and is fully characterized across –55°C to +150°C junction temperature range.

Can DMJ70H900HJ3 be used in parallel configurations?

Yes, but only with careful layout and gate drive matching. Its positive R_DS(ON) temperature coefficient (normalized R_DS(ON) increases with temperature) enables inherent current sharing. However, gate loop inductance imbalance must be minimized to avoid dynamic current skew during switching transitions.