Diodes Incorporated DMN1001UCA10-7
- Part No.:
- DMN1001UCA10-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 10-SMD, No Lead
- Datasheet:
-
DMN1001UCA10-7.pdf
- Description:
- MOSFET 2N-CH 12V 20A X2-TSN1820
- Quantity:
- Payment:

- Shipping:

Inventory:2,929
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Product details
Overview
DMN1001UCA10 from Diodes Incorporated is an N-channel enhancement-mode MOSFET in a 10-terminal CSP package (X2-TSN1820-10), optimized for low on-resistance and fast switching in compact power management circuits. It delivers 3.36 mΩ RSS(ON) at VGS = 3.8 V, supports 20 A continuous source current at TA = +25°C, and features integrated ESD protection on gate terminals - used in battery protection ICs and load-switch modules for portable electronics.
For engineers reviewing the DMN1001UCA10 datasheet, DMN1001UCA10 pinout, DMN1001UCA10 application, or DMN1001UCA10 equivalent, key selection criteria include its ultra-low-profile 0.30 mm height, 12 V VSSS rating, dual-source/dual-gate terminal configuration, thermal resistance of 52 °C/W under optimized PCB layout, and compatibility with 2.5–4.5 V logic-level gate drive in space-constrained Li-ion battery systems.
Technical Context
This MOSFET employs a trench-gate silicon process to achieve sub-4 mΩ RSS(ON) while maintaining robust 12 V breakdown voltage and low gate charge (Qg = 29 nC). Its dual-source/dual-gate structure enables symmetrical current handling and reduced parasitic inductance in high-frequency switching paths.
The device integrates monolithic gate protection diodes and is qualified per J-STD-020 Level 1 moisture sensitivity. Its 1.84 mm × 1.96 mm footprint and NiAu-plated terminals support fine-pitch reflow assembly on FR-4 PCBs with minimal thermal resistance penalty.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VSSS | 12 V - Maximum source-source blocking voltage; defines safe operating range in 3.3–5 V system rails with margin. |
| RSS(ON) @ VGS = 3.8 V | 3.36 mΩ - Enables <100 mW conduction loss at 6.8 A, critical for thermally constrained battery switches. |
| IS (continuous, TA = +25°C) | 20 A - Sustains full-load current in single-cell Li-ion protection FETs without external heatsinking. |
| Qg | 29 nC - Low total gate charge reduces driver power and switching transition time in DC-DC and load-switch ICs. |
| RθJA (optimized layout) | 52 °C/W - Achievable with minimum recommended copper pad; allows ~1.8 W power dissipation before TJ exceeds 150°C. |
| Package | X2-TSN1820-10 - 10-terminal chip-scale package, 1.84 × 1.96 × 0.30 mm, NiAu finish, J-STD-020 Level 1. |
Pinout & Package
Package: X2-TSN1820-10 - 10-terminal wafer-level CSP with dual-source/dual-gate symmetry, 0.30 mm typical height, and 0.40 mm pitch between outer rows.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 4, 5 | Source 1 | Primary low-side current return path; paralleled for reduced resistance and thermal spreading. |
| 3 | Gate 1 | Control input for first channel; internally connected to Gate 2 via metal layer for matched threshold behavior. |
| 6, 7, 9, 10 | Source 2 | Secondary low-side return path; electrically identical to Source 1; enables symmetric board layout. |
| 8 | Gate 2 | Redundant gate terminal; ensures uniform gate drive distribution and mitigates bond-wire inductance imbalance. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low profile | 0.30 mm height - Enables stacking under thin batteries or beneath display flex cables in smartphones and wearables. |
| Dual-source/dual-gate architecture | 10-terminal symmetry - Reduces current-loop area by >40% vs. standard 8-pin CSP, lowering EMI in high-dI/dt load switches. |
| ESD-protected gate | ±8 V VGSS rating with integrated diodes - Eliminates need for external gate protection in handheld device BMS modules. |
| Lead-free & green construction | <900 ppm Br/Cl, <1000 ppm Sb - Complies with automotive and medical RoHS 3 and IEC 61249-2-21 standards without derating. |
Applications
| Battery Protection Circuit | Load Switch Module |
|---|---|
|
Use Scenario: Overcurrent and short-circuit protection in single-cell Li-ion packs for Bluetooth earbuds and smartwatches. IC Role / Device Role / Timing Role: Primary back-to-back switch controlling discharge path; activated within 10 µs of fault detection by protection IC. Use Value: 3.36 mΩ RSS(ON) limits voltage drop to <23 mV at 7 A, preserving battery cutoff accuracy and runtime calibration. |
Use Scenario: Controlled power sequencing for PMIC subsystems in IoT edge nodes with multiple rail requirements. IC Role / Device Role / Timing Role: High-side load switch enabling/disabling 3.3 V domain; driven directly by GPIO with 2.5 V logic. Use Value: Gate threshold of 0.35–1.4 V ensures reliable turn-on with weak-drive microcontrollers, reducing BOM count. |
| USB-C Power Delivery Sink | Wireless Charging Receiver |
|
Use Scenario: Input power path management in portable USB-C PD adapters supporting 18–30 W output. IC Role / Device Role / Timing Role: Reverse-current blocking FET placed between input rectifier and buck converter input capacitor. Use Value: 12 V VSSS and 90 A pulsed rating withstand transient surges during hot-plug events without avalanche stress. |
Use Scenario: Rectification and regulation stage in Qi-compliant 15 W wireless charging receivers for smartphones. IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode in full-wave bridge; driven by phase-shifted gate signals. Use Value: 29 nC Qg and 247 pF Crss enable efficient 300–500 kHz switching with <5% duty-cycle dead-time overhead. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN10H260LQ-7 | RDS(ON) = 2.6 mΩ @ VGS = 4.5 V; larger 2.0 × 2.0 mm DFN package; no integrated gate ESD diodes. | Requires external gate protection; better suited for industrial power supplies where board space is less constrained. | Select when lower RDS(ON) justifies added protection components and 0.7 mm height penalty. |
| AOZ8821DI | Integrated load switch IC (not discrete FET); includes current limiting, thermal shutdown, and soft-start; 1.2 × 1.2 mm QFN. | Replaces discrete FET + driver + protection logic; not pin-compatible; requires firmware configuration. | Choose for simplified design and enhanced protection features where programmability and diagnostics are required. |
Compared with DMN1001UCA10, DMN10H260LQ-7 trades higher integration density for slightly better conduction loss but adds component count, while AOZ8821DI eliminates discrete layout complexity at the cost of flexibility and direct gate control.
Availability
DMN1001UCA10 is available at Aetrix Electronics and suitable for battery management systems, portable load-switch modules, and USB-C power delivery sink designs requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle availability.
Supply support for DMN1001UCA10 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power management, signal integrity, and protection solutions for consumer, industrial, and automotive markets.
DMN1001UCA10 belongs to Diodes' Ultra-Low-Profile Power MOSFET product line, engineered specifically for space-constrained battery-powered devices where thermal performance, gate drive simplicity, and reliability under repeated surge conditions are critical.
FAQ
What is the maximum allowable gate-source voltage for DMN1001UCA10?
The absolute maximum VGS is ±8 V, as specified in the Maximum Ratings table. Operation beyond this risks permanent gate oxide damage. For reliable 2.5 V logic-level drive, the device's VGS(TH) range (0.35–1.4 V) ensures turn-on with margin, and its ESD-protected gate structure tolerates transient overshoot up to ±8 V without external clamping.
Can DMN1001UCA10 be used in parallel configurations?
Yes - its dual-source/dual-gate architecture and matched RSS(ON) tolerance (±15% typ.) support parallel operation. Layout must mirror terminal symmetry: equal-length traces to each Source 1 and Source 2 group, and direct gate routing to pins 3 and 8 with identical impedance. Thermal coupling via shared copper pour further improves current sharing.
Is DMN1001UCA10 qualified for automotive applications?
No - it is not AEC-Q101 qualified. The datasheet explicitly states that automotive-grade versions require PPAP capability and IATF 16949 manufacturing; this part is intended for commercial/industrial portable electronics. Its -55°C to +150°C operating range supports extended temperature use, but qualification documentation and change control are not provided.
What PCB layout practices maximize thermal performance?
Use the recommended X2-TSN1820-10 pad layout: 0.25 mm solder mask opening, 0.53 mm thermal pad (Y dimension), and ≥1 inch² of 2 oz. copper connected to Source terminals. Avoid thermal vias under the die - instead, route heat laterally through the top-layer copper to adjacent ground or power planes using ≥6 × 0.3 mm vias spaced evenly around the perimeter.
DMN1001UCA10-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 10-SMD, No Lead
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual) Common Drain
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 12V
- Current - Continuous Drain (Id) @ 25°C:
- 20A (Ta)
- Rds On (Max) @ Id, Vgs:
- 3.55mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.4V @ 870µA
- Gate Charge (Qg) (Max) @ Vgs:
- 29nC @ 4V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2865pF @ 6V
- Power - Max:
- 1W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- X2-TSN1820-10
DMN1001UCA10-7 FAQ
1.How can I place an order for DMN1001UCA10-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN1001UCA10-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN1001UCA10-7 reliable?
The price and inventory of DMN1001UCA10-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN1001UCA10-7 is usually 5 days.
3.What payment methods are accepted for DMN1001UCA10-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN1001UCA10-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN1001UCA10-7?
DMN1001UCA10-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN1001UCA10-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN1001UCA10-7?
For technical support, including DMN1001UCA10-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN1001UCA10-7 requirements.
6.How does Aetrix verify that DMN1001UCA10-7 is sourced from the original manufacturer or authorized distributors?
All DMN1001UCA10-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN1001UCA10-7 meets industry standards.
7.What is the process for return or replacement of DMN1001UCA10-7?
All DMN1001UCA10-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN1001UCA10-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN1001UCA10-7 part is unused and in its original packaging.
Return procedure for DMN1001UCA10-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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