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Diodes Incorporated DMN1003UCA6-7
- Part No.:
- DMN1003UCA6-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-SMD, No Lead
- Datasheet:
-
DMN1003UCA6-7.pdf
- Description:
- MOSFET 2N-CH X3-DSN3518-6
- Quantity:
- Payment:
- Shipping:
Inventory:3,000
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Product details
Overview
DMN1003UCA6 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in a 6-pin CSP package (X3-DSN3518-6), rated for 12 V VSSS, 2.3 mΩ RSS(ON) at VGS = 4.5 V, and 23.6 A continuous source current at TA = +25°C. It serves as a low-loss load switch or battery protection device in compact portable power systems.
For engineers reviewing the DMN1003UCA6 datasheet, DMN1003UCA6 pinout, DMN1003UCA6 application, or DMN1003UCA6 equivalent, key selection criteria include ultra-low on-resistance at 3.8 V gate drive, 0.21 mm profile for space-constrained PCBs, ESD-protected gate, and thermal resistance of 46.8 °C/W under optimized layout - critical for high-density battery management modules.
Technical Context
This MOSFET integrates two identical N-channel channels in a single ultra-thin chip-scale package, sharing common source terminals per channel (pins 1/3/4 and 4/6) and independent gates (pins 2 and 5). Its design targets low-voltage DC power path control where gate drive voltage is limited to ≤4.5 V, such as in USB-C PD power delivery paths or smart battery packs.
The device uses trench-gate silicon technology to achieve sub-3 mΩ RSS(ON) while maintaining fast switching with 56.5 nC total gate charge and 248 pF Crss. Thermal performance is optimized for FR-4 PCB mounting with minimal copper area, enabling operation up to +150°C junction temperature without derating in thermally constrained layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VSSS | 12 V - Maximum source-source blocking voltage; defines safe operating range in 5–12 V battery systems |
| RSS(ON) @ VGS = 4.5 V | 2.3 mΩ typ - Enables <100 mW conduction loss at 20 A, critical for >95% efficiency in load switches |
| IS Continuous @ TA = +25°C | 23.6 A - Sustained current capability with standard FR-4 layout; supports high-current battery discharge paths |
| Qg | 56.5 nC - Gate drive energy requirement; determines driver sizing for <1 µs switching in power sequencing circuits |
| RθJA (optimized layout) | 46.8 °C/W - Junction-to-ambient thermal resistance with recommended pad layout; enables 1.05 W dissipation at +70°C ambient |
| Package | X3-DSN3518-6 - 3.54 × 1.77 × 0.21 mm CSP; footprint compatible with 0402 passives but electrically isolated for dual-channel routing |
| VGS(TH) | 0.5–1.3 V - Low threshold ensures turn-on with weak microcontroller GPIOs or LDO outputs down to 2.5 V |
Pinout & Package
Package: X3-DSN3518-6 - ultra-thin 6-pin chip-scale package with NiPdAu-plated terminals, moisture sensitivity level 1, and 0.0026 g mass.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Source 1 | Primary return path for Channel 1; internally bonded to pin 3 and pin 4 |
| 2 | Gate 1 | Independent control input for Channel 1; ESD-protected, ±8 V max rating |
| 3 | Source 1 | Redundant source connection for Channel 1; improves current sharing and thermal spreading |
| 4 | Source 2 | Shared source node for Channel 2; electrically tied to pins 1/3 and pin 6 |
| 5 | Gate 2 | Independent control input for Channel 2; identical electrical specs to pin 2 |
| 6 | Source 2 | Redundant source connection for Channel 2; enhances thermal dissipation and reduces parasitic inductance |
Key Features
| Feature | Design Value |
|---|---|
| Dual N-channel integration | Two independent 12 V, 23.6 A switches in one 3.54 × 1.77 mm footprint - eliminates discrete pairing and saves ≥30% board area |
| Ultra-low profile (0.21 mm) | Enables stacking under thin batteries or beneath display flex cables in smartphones and wearables |
| ESD-protected gate | HBM rating ≥2 kV - allows direct handling and assembly without special ESD controls during SMT reflow |
| Lead-free & green construction | Halogen- and antimony-free (<900 ppm Br/Cl, <1000 ppm Sb); compliant with RoHS 3 and automotive supply chain requirements |
| Optimized thermal pad layout | Recommended copper land pattern achieves 46.8 °C/W RθJA - supports 1.05 W continuous dissipation without heatsink |
Applications
| Battery Protection Circuit | USB-C Power Delivery Switch |
|---|---|
Use Scenario: Real-time overcurrent and short-circuit cutoff in Li-ion battery packs for tablets and power banks. IC Role / Device Role / Timing Role: Dual-channel MOSFET acts as back-to-back switch controlling charge/discharge paths with independent gate control for fault isolation. Use Value: 2.3 mΩ RSS(ON) limits voltage drop to <50 mV at 20 A, preserving battery gauge accuracy and minimizing thermal rise in sealed enclosures. | Use Scenario: Directional power path selection in USB-C receptacles supporting 3 A/20 V PD profiles. IC Role / Device Role / Timing Role: Load switch enabling or blocking VBUS to downstream ports based on CC logic; dual channels support redundant or split-rail configurations. Use Value: 0.21 mm height clears tight connector keepouts; low Qg ensures <500 ns turn-on for dynamic port negotiation without bus glitching. |
| Smartphone Power Sequencing | Wireless Charging Receiver Control |
Use Scenario: Controlled power-up sequence for modem, camera, and display subsystems in mobile SoC platforms. IC Role / Device Role / Timing Role: Dual load switch providing independent enable control for two voltage domains (e.g., VDD_IO and VDD_CORE) with coordinated timing. Use Value: Matched RSS(ON) between channels ensures balanced voltage drop and eliminates sequencing skew caused by parametric mismatch. | Use Scenario: Isolating receiver coil power path during foreign object detection (FOD) or thermal shutdown events. IC Role / Device Role / Timing Role: Fast-acting disconnect switch placed between rectifier output and charging IC input; triggered by FOD controller GPIO. Use Value: 100 A pulsed current rating handles transient surges during coil resonance collapse; ESD protection prevents latch-up from coil coupling noise. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN1004UCB6-7 | RSS(ON) = 3.0 mΩ @ VGS = 4.5 V; same package and pinout | Higher on-resistance increases conduction loss by ~30% at 20 A; suitable where cost sensitivity outweighs efficiency | Select when BOM cost reduction is prioritized over thermal margin in low-duty-cycle applications |
| FDMA1023NZ | Single-channel 12 V MOSFET (3.2 mΩ), 6-pin WDFN; no dual-channel integration | Requires two devices and additional routing for dual-path control; larger footprint and higher assembly cost | Choose only if existing layout lacks space for dual-channel symmetry or requires channel independence beyond shared sources |
Compared with DMN1004UCB6-7, the DMN1003UCA6 delivers lower conduction loss and tighter thermal performance; versus FDMA1023NZ, it provides integrated dual-channel functionality with 40% smaller area and matched parametrics - essential for next-gen portable power architectures.
Availability
DMN1003UCA6 is available at Aetrix Electronics and suitable for battery protection, USB-C power delivery, and smartphone power sequencing requiring stable component supply and long-term lifecycle assurance.
Supply support for DMN1003UCA6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power management, signal integrity, and protection solutions for consumer, industrial, and automotive markets.
The DMN1003UCA6 belongs to Diodes' Ultra-Low RDS(ON) CSP MOSFET product line, engineered specifically for space- and thermally constrained battery-powered devices demanding minimal voltage drop and rapid switching response.
FAQ
What is the maximum allowable gate-source voltage for DMN1003UCA6?
The absolute maximum VGS is ±8 V per the datasheet's Maximum Ratings table. Exceeding this risks permanent gate oxide damage. For reliable operation, gate drive should be limited to 0–4.5 V in standard applications, with transient spikes clamped using Zener diodes if driven from higher-voltage controllers.
Can DMN1003UCA6 be used in automotive-grade designs?
DMN1003UCA6 is not AEC-Q101 qualified. While its -55°C to +150°C operating range meets automotive temperature requirements, it lacks PPAP documentation, IATF 16949 manufacturing certification, and stress-test validation required for automotive use. Diodes offers AEC-Q101 variants like DMN10H260SFG for qualified applications.
How does the dual-source pin configuration affect PCB layout?
Pins 1/3/4 form one source node and pins 4/6 form the second - meaning pin 4 is the common source terminal shared between both channels. Layout must route separate gate traces to pins 2 and 5, while connecting all source pins (1, 3, 4, 6) to respective power planes with symmetric copper pour to balance current distribution and minimize thermal gradient.
Is thermal relief required for the source pads in DMN1003UCA6?
No - the X3-DSN3518-6 package relies on direct thermal conduction through the exposed source terminals into the PCB copper. Thermal relief would impede heat transfer and raise junction temperature. The datasheet specifies a solid copper land pattern (C1 = 2.00 mm) with no thermal spokes; solder mask defined pads ensure optimal thermal and electrical performance.
DMN1003UCA6-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-SMD, No Lead
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- 1.3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 56.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3315pF @ 6V
- Power - Max:
- 2.67W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- X3-DSN3518-6
DMN1003UCA6-7 FAQ
1.How can I place an order for DMN1003UCA6-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN1003UCA6-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN1003UCA6-7 reliable?
The price and inventory of DMN1003UCA6-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN1003UCA6-7 is usually 5 days.
3.What payment methods are accepted for DMN1003UCA6-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN1003UCA6-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN1003UCA6-7?
DMN1003UCA6-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN1003UCA6-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN1003UCA6-7?
For technical support, including DMN1003UCA6-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN1003UCA6-7 requirements.
6.How does Aetrix verify that DMN1003UCA6-7 is sourced from the original manufacturer or authorized distributors?
All DMN1003UCA6-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN1003UCA6-7 meets industry standards.
7.What is the process for return or replacement of DMN1003UCA6-7?
All DMN1003UCA6-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN1003UCA6-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN1003UCA6-7 part is unused and in its original packaging.
Return procedure for DMN1003UCA6-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMN1003UCA6-7 Tags
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