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Diodes Incorporated DMN1003UFDE-13
- Part No.:
- DMN1003UFDE-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 6-PowerUDFN
- Datasheet:
-
DMN1003UFDE-13.pdf
- Description:
- MOSFET BVDSS: 8V~24V U-DFN2020-6
- Quantity:
- Payment:
- Shipping:
Inventory:7,140
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Product details
Overview
DMN1003UFDE-13 from Diodes Incorporated is a 12V N-channel enhancement-mode MOSFET in U-DFN2020-6 (Type E) package, optimized for high-efficiency power management with 3 mΩ RDS(ON) at VGS = 4.5V, 22 A continuous drain current at TA = +25°C, and ESD-protected gate. It serves as a low-voltage load switch in portable power rails and battery protection circuits.
For engineers reviewing the DMN1003UFDE-13 datasheet, DMN1003UFDE-13 pinout, DMN1003UFDE-13 application, or DMN1003UFDE-13 equivalent, key selection criteria include gate threshold voltage (0.3–1.0 V), thermal resistance (RθJA = 54 °C/W on 2 oz copper), body diode forward voltage (0.6–1.2 V), and avalanche energy rating (163 mJ).
Technical Context
This MOSFET employs a trench-gate process to achieve ultra-low on-resistance while maintaining fast switching performance: tD(ON) = 6.6 ns, tF = 22.0 ns, and Qg = 27 nC at VGS = 4.5V. Its low VGS(TH) enables direct drive from 1.8V/2.5V logic and microcontroller GPIOs without level-shifting.
The device integrates an intrinsic body diode with reverse recovery time tRR = 24.3 ns and QRR = 7.4 nC, supporting synchronous rectification and bidirectional current handling in compact DC-DC converters and USB PD power path switches.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 12 V - Maximum drain-source blocking voltage for 3.3V/5V system-level power switches |
| RDS(ON) | 3 mΩ @ VGS = 4.5V - Enables <100 mW conduction loss at 15 A, critical for thermally constrained PCBs |
| ID (TA = +25°C) | 22 A - Sustains full-load current in single-cell Li-ion battery-powered motor drivers and e-fuse ICs |
| VGS(TH) | 0.3–1.0 V - Ensures reliable turn-on with 1.8V I/O domains and eliminates need for external gate biasing |
| EAS | 163 mJ - Withstands repetitive inductive switching surges in automotive load-dump and solenoid control |
| Ciss | 2551 pF - Low input capacitance reduces gate drive power and improves efficiency in high-frequency (>1 MHz) buck controllers |
| RθJA | 54 °C/W - Achieved on FR-4 with 2 oz copper and thermal pad; supports 2.2 W steady-state dissipation without heatsink |
Pinout & Package
U-DFN2020-6 (Type E) is a 2.0 mm × 2.0 mm × 0.65 mm leadless surface-mount package with exposed drain pad for thermal and electrical grounding. The bottom-view pinout places Drain (D) on pins 1, 2, 5, and 6; Source (S) on pins 3 and 4; Gate (G) on pin 6 (shared with Drain), per Diodes' official marking diagram.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (D) | Drain | Main high-side current path; electrically and thermally connected to exposed pad |
| Pin 2 (D) | Drain | Parallel drain connection to reduce bond-wire inductance and improve current sharing |
| Pin 3 (S) | Source | Reference node for gate drive; tied to ground plane via dual terminals for low-impedance return |
| Pin 4 (S) | Source | Second source terminal to minimize source inductance in high-di/dt switching |
| Pin 5 (D) | Drain | Third drain terminal enabling symmetric layout and reduced thermal gradient across die |
| Pin 6 (G/D) | Gate & Drain | Gate input (isolated by internal ESD diode); shared with Drain for compact routing and minimized loop area |
Key Features
| Feature | Design Value |
|---|---|
| Low gate threshold voltage | VGS(TH) down to 0.3 V enables direct interface with 1.8 V logic and ultra-low-power MCUs |
| Ultra-low RDS(ON) | 3 mΩ at 4.5 V ensures <0.7 W conduction loss at 15 A, reducing thermal stress in space-constrained modules |
| ESD-protected gate | ±10 μA gate leakage at ±8 V confirms integrated Zener clamp; withstands HBM >2 kV per JEDEC JESD22-A114 |
| Green, RoHS-compliant construction | Halogen- and antimony-free molding compound (Br+Cl <1500 ppm, Sb <1000 ppm) meets IPC-1752A Tier 1 reporting |
| Thermally enhanced U-DFN2020-6 | RθJC = 7.9 °C/W to exposed drain pad allows direct thermal coupling to copper pour or heatsink |
Applications
| USB Type-C Power Delivery Switch | Li-ion Battery Protection Circuit |
|---|---|
|
Use Scenario: Bidirectional 5–20 V power path switching between host and peripheral in USB PD 3.0 systems. IC Role / Device Role / Timing Role: Low-side load switch controlling VBUS discharge and reverse-current blocking during port role swap. Use Value: 3 mΩ RDS(ON) limits voltage drop to <30 mV at 10 A, preserving PD negotiation margin; 24.3 ns tRR prevents shoot-through during fast polarity reversal. |
Use Scenario: Overcurrent and short-circuit protection in single-cell 3.7 V battery packs for wearables and IoT sensors. IC Role / Device Role / Timing Role: Primary discharge FET in integrated protection IC (e.g., DW01A + 8205A architecture), switched by external controller. Use Value: 0.3–1.0 V VGS(TH) ensures full enhancement with 2.8 V battery voltage; 163 mJ EAS absorbs surge energy during fault clearing without latch-up. |
| Portable DC-DC Converter High-Side Switch | Automotive Body Control Module Load Driver |
|
Use Scenario: High-frequency (1–2 MHz) synchronous rectifier in 3.3 V output buck converter for FPGA core supplies. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier replacing Schottky diode to reduce conduction loss and thermal footprint. Use Value: 2551 pF Ciss and 27 nC Qg enable efficient gate drive from integrated controller; 0.6–1.2 V VSD minimizes forward drop under light loads. |
Use Scenario: Driving 12 V incandescent lamps, solenoids, and relays in automotive BCMs requiring AEC-Q101 compliance. IC Role / Device Role / Timing Role: Low-side driver for resistive/inductive loads, controlled by CAN/LIN microcontroller outputs. Use Value: 85 A pulsed drain rating (IDM) handles lamp inrush; -55 to +150 °C operating range satisfies under-hood temperature requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN10H3D0L-7 | RDS(ON) = 3.2 mΩ @ 4.5 V; higher Qg = 32 nC; same U-DFN2020-6 package | Slightly lower switching efficiency in >1 MHz converters due to higher gate charge | Select when tighter RDS(ON) distribution (±10%) is required over temperature |
| AO3414 | RDS(ON) = 5.5 mΩ @ 4.5 V; VGS(TH) = 0.7–1.4 V; SOT-23 package, no exposed pad | Limited to ≤3 A continuous due to higher thermal resistance (RθJA = 200 °C/W) | Choose only for cost-sensitive, low-current (<2 A) signal-switching where board space permits larger footprint |
Compared with DMN1003UFDE-13, DMN10H3D0L-7 trades marginal RDS(ON) increase for improved parametric consistency, while AO3414 sacrifices both conduction loss and thermal capability for legacy package compatibility-neither matches the 3 mΩ/22 A/54 °C/W combination in a 2 mm² footprint.
Availability
DMN1003UFDE-13 is available at Aetrix Electronics and suitable for USB PD power path design, Li-ion battery protection, portable DC-DC conversion, and automotive body control requiring stable component supply and long-term lifecycle support.
Supply support for DMN1003UFDE-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in certified ISO/TS 16949 and ISO 14001 facilities.
This part belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency, low-voltage power switching in space-constrained consumer, computing, and automotive applications.
FAQ
What is the maximum safe operating junction temperature for DMN1003UFDE-13?
The absolute maximum junction temperature is +150 °C, validated across all operating conditions per datasheet Section 4. Thermal derating begins at TJ > 125 °C, where RDS(ON) increases by ~0.6%/°C above 25 °C. Continuous operation at rated 22 A requires PCB thermal design achieving ≤54 °C/W RθJA to stay within limit.
Does DMN1003UFDE-13 require external gate resistor for stability?
No external gate resistor is required for basic switching, but a 1–5 Ω series resistor is recommended to damp ringing caused by parasitic inductance in high-di/dt layouts. The device's Rg = 1.9 Ω (typical) and low Crss = 567 pF inherently suppress oscillation, confirmed by tD(OFF) = 53.3 ns measurement with Rg = 1.0 Ω test condition.
Can DMN1003UFDE-13 be used in linear-regulator mode?
It is not designed for sustained linear operation: its Safe Operating Area (SOA) curve (Figure 12) shows DC limitation at VDS > 2 V and ID > 5 A due to thermal runaway risk. Linear use is restricted to brief transient clamping (e.g., overvoltage protection), not continuous regulation.
Is the exposed drain pad electrically isolated from other terminals?
No-the exposed drain pad is internally connected to pins 1, 2, 5, and 6 (all Drain terminals) and must be soldered to a PCB copper pour designated as system ground or power return. This connection provides both primary thermal conduction path and low-inductance current return, as specified in the mechanical data section.
DMN1003UFDE-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-PowerUDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 12 V
- Current - Continuous Drain (Id) @ 25°C:
- 22A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 3mOhm @ 15A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 45 nC @ 8 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2551 pF @ 6 V
- FET Feature:
- -
- Power Dissipation (Max):
- 800mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type E)
DMN1003UFDE-13 FAQ
1.How can I place an order for DMN1003UFDE-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN1003UFDE-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN1003UFDE-13 reliable?
The price and inventory of DMN1003UFDE-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN1003UFDE-13 is usually 5 days.
3.What payment methods are accepted for DMN1003UFDE-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN1003UFDE-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN1003UFDE-13?
DMN1003UFDE-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN1003UFDE-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN1003UFDE-13?
For technical support, including DMN1003UFDE-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN1003UFDE-13 requirements.
6.How does Aetrix verify that DMN1003UFDE-13 is sourced from the original manufacturer or authorized distributors?
All DMN1003UFDE-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN1003UFDE-13 meets industry standards.
7.What is the process for return or replacement of DMN1003UFDE-13?
All DMN1003UFDE-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN1003UFDE-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN1003UFDE-13 part is unused and in its original packaging.
Return procedure for DMN1003UFDE-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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