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Diodes Incorporated DMN1003UFDE-7
- Part No.:
- DMN1003UFDE-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 6-PowerUDFN
- Datasheet:
-
DMN1003UFDE-7.pdf
- Description:
- MOSFET BVDSS: 8V~24V U-DFN2020-6
- Quantity:
- Payment:
- Shipping:
Inventory:6,607
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Product details
Overview
DMN1003UFDE-7 from Diodes Incorporated is a 12V N-channel enhancement-mode MOSFET in U-DFN2020-6 (Type E) package, optimized for high-efficiency power management with 3 mΩ RDS(ON) at VGS = 4.5V, 22 A continuous drain current at TA = +25°C, and ESD-protected gate. It serves as a low-voltage load switch in portable power rails and battery protection circuits.
For engineers reviewing the DMN1003UFDE-7 datasheet, DMN1003UFDE-7 pinout, DMN1003UFDE-7 application, or DMN1003UFDE-7 equivalent, key selection criteria include gate threshold voltage (0.3–1.0 V), thermal resistance (RθJA = 54 °C/W on 2 oz copper), body diode forward voltage (0.6–1.2 V), and avalanche energy rating (163 mJ).
Technical Context
This MOSFET employs a trench-gate silicon process to achieve ultra-low on-resistance while maintaining fast switching performance: tD(ON) = 6.6 ns, tF = 22.0 ns, and Qg = 27 nC at VGS = 4.5V. Its low VGS(TH) enables direct drive from 1.8 V and 3.3 V logic controllers without level-shifting.
The device integrates an intrinsic body diode with reverse recovery time tRR = 24.3 ns and QRR = 7.4 nC, supporting synchronous rectification and bidirectional current handling in compact DC-DC converters and USB PD power paths.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 12 V - Maximum drain-source blocking voltage for 12 V input rail applications |
| RDS(ON) | 3 mΩ @ VGS = 4.5V - Enables ≤75 mW conduction loss at 15 A, critical for thermally constrained PCBs |
| ID (TA = +25°C) | 22 A - Continuous current capability with FR-4 board and 2 oz copper thermal bias |
| VGS(TH) | 0.3–1.0 V - Ensures reliable turn-on with standard I/O voltages (1.8 V/3.3 V) without gate driver |
| EAS | 163 mJ - Avalanche energy rating supports robust operation under inductive load switching stress |
| Ciss | 2551 pF - Input capacitance determines gate drive strength requirement for <10 ns switching transitions |
| RθJA | 54 °C/W - Thermal resistance measured on optimized 2 oz copper layout, enabling 2.2 W power dissipation |
Pinout & Package
Package: U-DFN2020-6 (Type E), 2.0 mm × 2.0 mm × 0.6 mm, exposed drain pad for thermal conduction. Molded green compound, RoHS-compliant matte tin finish on copper leadframe.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (S) | Source | Reference node for gate control; connects to ground or low-side return path |
| 2 (G) | Gate | Control terminal; ESD-protected; requires ≤±8 V drive relative to source |
| 3 (D) | Drain | High-current output node; tied to exposed pad for thermal and electrical connection |
| 4 (S) | Source | Second source connection; paralleled with Pin 1 to reduce source inductance |
| 5 (D) | Drain | Second drain connection; bonded to exposed pad for low-inductance high-current path |
| 6 (G) | Gate | Second gate connection; reduces gate loop inductance for high-speed switching |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at low VGS | 4 mΩ @ VGS = 2.5V - Supports efficient operation from single-cell Li-ion (2.5–4.2 V) systems |
| ESD-protected gate | HBM rating ≥2 kV - Eliminates need for external gate protection in handheld and wearables |
| Ultra-thin profile | 0.6 mm max height - Enables use in space-constrained modules such as USB-C power delivery adapters |
| Halogen- and antimony-free | <900 ppm Br, <900 ppm Cl, <1000 ppm Sb - Meets IPC-1752A "Green" compliance for automotive and medical OEMs |
| Moisture sensitivity level | MSL Level 1 per J-STD-020 - No bake required before reflow, simplifying SMT assembly |
Applications
| USB-C Power Delivery Switch | Battery Protection Circuit |
|---|---|
|
Use Scenario: Bidirectional 5–20 V power path control between USB-C port and system battery in portable devices. IC Role / Device Role / Timing Role: Low-side load switch managing charge/discharge direction and overcurrent isolation. Use Value: 3 mΩ RDS(ON) limits voltage drop to <30 mV at 10 A, preserving bus voltage regulation during 100 W operation. |
Use Scenario: Overcurrent and short-circuit protection in single-cell Li-ion battery packs for power tools and medical instruments. IC Role / Device Role / Timing Role: Primary discharge FET controlled by battery management IC to interrupt fault currents within microseconds. Use Value: 85 A pulsed drain rating and 163 mJ avalanche energy enable safe interruption of >50 A short-circuit events without device failure. |
| Point-of-Load DC-DC Converter | Automotive Body Control Module |
|
Use Scenario: High-frequency synchronous rectifier in 12 V → 3.3 V buck converter for FPGA or SoC core rails. IC Role / Device Role / Timing Role: Low-VGS N-channel MOSFET replacing Schottky diode in secondary-side rectification. Use Value: 24.3 ns reverse recovery time and 7.4 nC QRR minimize switching losses and EMI compared to discrete diodes. |
Use Scenario: 12 V load switching for LED lighting, window lift motors, and HVAC actuators in passenger vehicles. IC Role / Device Role / Timing Role: General-purpose N-channel switch driven directly by microcontroller GPIO pins. Use Value: 0.3–1.0 V gate threshold ensures full enhancement at 3.3 V MCU outputs, eliminating need for external level shifters. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power-switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN10H320SFD-7 | RDS(ON) = 3.2 mΩ @ VGS = 4.5V; higher VDSS = 100 V; larger U-DFN2020-6 footprint | Designed for 48 V industrial PoE and higher-voltage battery systems | Select when higher breakdown voltage and legacy footprint compatibility are required over lowest RDS(ON) |
| AO3400A | RDS(ON) = 42 mΩ @ VGS = 4.5V; SOT-23 package; no ESD protection | Cost-sensitive consumer electronics with relaxed efficiency and reliability requirements | Choose only for non-critical 12 V loads where thermal margin exceeds 5× and ESD immunity is not mandated |
Compared with DMN1003UFDE-7, DMN10H320SFD-7 trades lower RDS(ON) for higher voltage rating and larger die size, while AO3400A sacrifices 14× higher on-resistance and lacks ESD hardening-making DMN1003UFDE-7 optimal for space-constrained, high-efficiency 12 V power switches requiring robustness.
Availability
DMN1003UFDE-7 is available at Aetrix Electronics and suitable for USB-C power delivery systems, battery protection modules, point-of-load converters, and automotive body control units requiring stable component supply and long-term production continuity.
Supply support for DMN1003UFDE-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal solutions for power management, signal integrity, and connectivity applications.
This MOSFET belongs to Diodes' Ultra-Low RDS(ON) U-DFN PowerMOS family, engineered specifically for high-current, low-voltage switching in portable, automotive, and industrial power systems where thermal density and gate-drive simplicity are critical.
FAQ
What is the maximum allowable gate-source voltage for DMN1003UFDE-7?
The absolute maximum gate-source voltage is ±8 V. Exceeding this rating risks permanent gate oxide damage. The device features ESD protection rated to ≥2 kV HBM, but sustained overvoltage beyond ±8 V-even briefly-can cause irreversible gate leakage or threshold shift. Always limit gate drive with clamping diodes or resistor-divider networks when using higher-voltage drivers.
Can DMN1003UFDE-7 be used in parallel configurations?
Yes, it supports paralleling due to its positive temperature coefficient of RDS(ON), which promotes current sharing across multiple devices. However, ensure matched gate drive routing (equal trace length and impedance) and symmetrical PCB thermal layout. Derate total current by 15% versus sum of individual ID ratings to account for layout-induced imbalances.
Does DMN1003UFDE-7 meet AEC-Q101 qualification?
No-DMN1003UFDE-7 is not AEC-Q101 qualified. While manufactured in IATF 16949-certified facilities, it lacks the extended temperature cycling, humidity testing, and failure analysis required for automotive-grade qualification. For AEC-Q101 applications, Diodes offers the pin-compatible DMN10H320SFD-7Q, which is fully qualified to AEC-Q101 Grade 1.
What is the recommended PCB pad layout for thermal performance?
Use the manufacturer-recommended U-DFN2020-6 (Type E) pad layout with a solid 5 mm × 5 mm exposed drain pad connected to ≥2 internal ground planes via ≥6 thermal vias (0.3 mm diameter, 0.8 mm pitch). Maintain solder mask defined pads and avoid solder paste slumping to ensure uniform solder joint thickness and minimal thermal resistance to ambient.
DMN1003UFDE-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-PowerUDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 12 V
- Current - Continuous Drain (Id) @ 25°C:
- 22A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 3mOhm @ 15A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 45 nC @ 8 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2551 pF @ 6 V
- FET Feature:
- -
- Power Dissipation (Max):
- 800mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type E)
DMN1003UFDE-7 FAQ
1.How can I place an order for DMN1003UFDE-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN1003UFDE-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN1003UFDE-7 reliable?
The price and inventory of DMN1003UFDE-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN1003UFDE-7 is usually 5 days.
3.What payment methods are accepted for DMN1003UFDE-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN1003UFDE-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN1003UFDE-7?
DMN1003UFDE-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN1003UFDE-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN1003UFDE-7?
For technical support, including DMN1003UFDE-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN1003UFDE-7 requirements.
6.How does Aetrix verify that DMN1003UFDE-7 is sourced from the original manufacturer or authorized distributors?
All DMN1003UFDE-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN1003UFDE-7 meets industry standards.
7.What is the process for return or replacement of DMN1003UFDE-7?
All DMN1003UFDE-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN1003UFDE-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN1003UFDE-7 part is unused and in its original packaging.
Return procedure for DMN1003UFDE-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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