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Diodes Incorporated DMN1004UFDF-13
- Part No.:
- DMN1004UFDF-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DMN1004UFDF-13.pdf
- Description:
- MOSFET N-CH 12V 15A 6UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:6,443
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Product details
Overview
DMN1004UFDF-13 from Diodes Incorporated is a 12V N-channel enhancement-mode MOSFET in U-DFN2020-6 (Type F) package, delivering 4.8 mΩ RDS(ON) at VGS = 4.5V and 15 A continuous drain current at TA = +25°C. It features low gate threshold voltage (0.3–1.0 V), ESD-protected gate, and 0.6 mm profile-optimized for high-efficiency power management and compact load switching in space-constrained PCBs.
For engineers reviewing the DMN1004UFDF-13 datasheet, DMN1004UFDF-13 pinout, DMN1004UFDF-13 application, or DMN1004UFDF-13 equivalent, key selection criteria include its 72 °C/W thermal resistance (with thermal pad), 2.1 W power dissipation capability on 2 oz copper board, and compatibility with 2.5 V logic-level drive in battery-powered and USB-C PD subsystems.
Technical Context
This MOSFET employs trench-gate silicon process technology to achieve ultra-low on-resistance while maintaining fast switching performance: tD(ON) = 5.3 ns, tR = 10.7 ns, and QG = 26 nC at VGS = 4.5V. Its body diode exhibits VSD = 0.6–1.2 V at IS = 3.2 A, supporting synchronous rectification and reverse-current blocking.
The device is rated for operation from –55°C to +150°C junction temperature, with normalized RDS(ON) variation ≤2× over that range at VGS = 4.5V. Its U-DFN2020-6 package uses NiPdAu-plated terminals and meets J-STD-020 Level 1 moisture sensitivity-enabling standard reflow without baking.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 12 V - Maximum drain-source blocking voltage; suitable for 5 V/12 V rail switching and USB-C power path control. |
| RDS(ON) | 4.8 mΩ @ VGS = 4.5V - Enables <100 mW conduction loss at 15 A, critical for thermally constrained portable designs. |
| ID (max) | 15 A @ TA = +25°C - Sustains full-load current in compact DC-DC output stages and hot-swap controllers. |
| QG | 26 nC @ VGS = 4.5V - Low gate charge reduces driver power and enables efficient PWM operation up to 1 MHz. |
| RθJA | 72 °C/W - Achieved with 2 oz copper thermal bias; allows 2.1 W steady-state dissipation without heatsink in optimized layout. |
| VGS(TH) | 0.3–1.0 V - Ensures reliable turn-on with 1.8 V/2.5 V logic outputs and supports low-voltage battery monitoring circuits. |
| CISS | 2385 pF - Input capacitance impacts gate drive loop stability; requires careful layout to avoid ringing in high-dV/dt environments. |
Pinout & Package
U-DFN2020-6 (Type F) package: 2.0 × 2.0 mm footprint, 0.6 mm height, 6-terminal leadless construction with exposed thermal pad (Pin 5). Molded green compound (UL 94V-0), NiPdAu-plated copper leadframe.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Source | Main current return path; electrically tied to thermal pad (Pin 5) for lowest RDS(ON) and thermal resistance. |
| 2 | Gate | Control input; ESD-protected with integrated gate protection diode; requires <10 kΩ series resistor for robustness. |
| 3 | Drain | High-side or low-side power path connection; handles full load current and avalanche energy (EAS = 55 mJ). |
| 4 | Source | Second source terminal-parallel connection with Pin 1 to reduce bond wire inductance and improve current sharing. |
| 5 | Thermal Pad | Exposed copper pad for PCB thermal conduction; must be soldered to solid copper pour for specified RθJA = 72 °C/W. |
| 6 | Drain | Second drain terminal-parallel connection with Pin 3 to minimize package inductance in high-frequency switching. |
Key Features
| Feature | Design Value |
|---|---|
| Low-profile U-DFN2020-6 | 0.6 mm max height enables use in ultra-thin consumer electronics and wearable power modules. |
| Logic-level gate drive | VGS(TH) down to 0.3 V ensures compatibility with 1.8 V microcontrollers and battery fuel gauges. |
| ESD-protected gate | HBM rating ≥2 kV per JEDEC JESD22-A114; eliminates need for external gate protection in most applications. |
| Green, RoHS-compliant construction | No lead, halogen, or antimony; meets EU RoHS 3 (2015/863/EU) and automotive change-control requirements. |
| Optimized thermal pad | Pin 5 thermal pad delivers 22 °C/W RθJC, enabling direct heat transfer to PCB ground plane. |
Applications
| USB-C Power Delivery Switch | Portable Device Load Switch |
|---|---|
Use Scenario: Bidirectional 5–20 V power path control in USB-C DRP (dual-role port) implementations. IC Role / Device Role / Timing Role: Low-side load switch managing VBUS enable/disable with fast turn-on (<10 ns) and minimal voltage drop. Use Value: 4.8 mΩ RDS(ON) limits voltage drop to <75 mV at 15 A, preserving PD negotiation margins and reducing thermal stress. |
Use Scenario: Controlled power-up of camera modules, sensors, or RF transceivers in smartphones and IoT edge nodes. IC Role / Device Role / Timing Role: High-side or low-side power switch with soft-start capability via gate RC network. Use Value: 0.6 mm profile fits under stacked PCB assemblies; 2.1 W power handling supports burst-mode loads up to 12 A. |
| DC-DC Converter Synchronous Rectifier | Hot-Swap Controller Back-End Switch |
Use Scenario: Secondary-side synchronous rectification in 12 V input buck converters for industrial PLCs and PoE injectors. IC Role / Device Role / Timing Role: Fast-recovery body diode (tRR = 24.3 ns) and low QGD/QGS ratio support high-frequency (>500 kHz) ZVS operation. Use Value: 55 mJ avalanche energy rating withstands transient inductive kickback during light-load discontinuous conduction mode. |
Use Scenario: Inrush current limiting and fault isolation in 12 V distributed power rails for networking equipment. IC Role / Device Role / Timing Role: Current-sense enabled load switch with integrated thermal shutdown (TJ(max) = 150°C). Use Value: 72 °C/W RθJA enables stable 10 A operation at 70°C ambient without derating when mounted on 2 oz copper. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN10H400L-7 | Higher VDSS (40 V), higher RDS(ON) (4.0 mΩ @ 4.5 V), same U-DFN2020-6 package. | Better suited for 24 V industrial systems; less optimal for 12 V USB-C due to over-spec'd breakdown margin. | Select when future-proofing for higher bus voltages or needing tighter RDS(ON) tolerance (±10% vs ±20%). |
| AO3400A | Same VDSS (30 V), higher RDS(ON) (14 mΩ @ 4.5 V), SOT-23 package, no thermal pad. | Limited to ≤3 A continuous current; unsuitable for high-power USB-C or DC-DC rectification. | Choose only for cost-sensitive, low-current (<2 A) applications where board space is not constrained. |
Compared with DMN10H400L-7 and AO3400A, DMN1004UFDF-13 offers the best balance of low RDS(ON), compact thermal-aware packaging, and 12 V system optimization-making it preferred for space- and efficiency-critical 5–12 V power switches.
Availability
DMN1004UFDF-13 is available at Aetrix Electronics and suitable for USB-C power delivery systems, portable device load switching, and DC-DC synchronous rectification requiring stable component supply and long-term production continuity.
Supply support for DMN1004UFDF-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.
This part belongs to Diodes' "PowerMOS" portfolio, engineered specifically for high-efficiency, low-voltage power switching in consumer, computing, and industrial applications where thermal density and logic-level drive are critical.
FAQ
What is the maximum safe operating temperature for DMN1004UFDF-13?
The absolute maximum junction temperature is +150°C, and the device is rated for continuous operation across –55°C to +150°C. At TA = +70°C with 2 oz copper thermal bias, the maximum continuous drain current is 12 A-verified by the datasheet's derating curve and RθJA = 72 °C/W specification.
Can DMN1004UFDF-13 be used in high-frequency PWM applications above 500 kHz?
Yes-its 26 nC total gate charge at 4.5 V, 5.3 ns turn-on delay, and 10.7 ns rise time support clean switching up to 1 MHz. However, layout must minimize gate loop inductance, and gate driver peak current should exceed 2 A to ensure full enhancement within 10 ns.
Is the thermal pad (Pin 5) required to be connected to ground?
No-the thermal pad is internally isolated and serves only for thermal conduction. It may be left floating electrically but must be soldered to a large copper pour for thermal performance. Datasheet Figure 7 confirms no internal electrical connection between the pad and any terminal.
Does DMN1004UFDF-13 meet automotive qualification standards?
As shipped, it is not AEC-Q101 qualified. Diodes offers an automotive-grade variant (DMN1004UFDFQ-13) with PPAP documentation, IATF 16949 manufacturing, and extended reliability testing-listed on their automotive product page and qualified per AEC-Q101 Rev D.
DMN1004UFDF-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 12 V
- Current - Continuous Drain (Id) @ 25°C:
- 15A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 4.8mOhm @ 15A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 47 nC @ 10 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2385 pF @ 6 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.1W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6
DMN1004UFDF-13 FAQ
1.How can I place an order for DMN1004UFDF-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN1004UFDF-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN1004UFDF-13 reliable?
The price and inventory of DMN1004UFDF-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN1004UFDF-13 is usually 5 days.
3.What payment methods are accepted for DMN1004UFDF-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN1004UFDF-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN1004UFDF-13?
DMN1004UFDF-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN1004UFDF-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN1004UFDF-13?
For technical support, including DMN1004UFDF-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN1004UFDF-13 requirements.
6.How does Aetrix verify that DMN1004UFDF-13 is sourced from the original manufacturer or authorized distributors?
All DMN1004UFDF-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN1004UFDF-13 meets industry standards.
7.What is the process for return or replacement of DMN1004UFDF-13?
All DMN1004UFDF-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN1004UFDF-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN1004UFDF-13 part is unused and in its original packaging.
Return procedure for DMN1004UFDF-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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