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Diodes Incorporated DMN1004UFDF-7
- Part No.:
- DMN1004UFDF-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DMN1004UFDF-7.pdf
- Description:
- MOSFET N-CH 12V 15A 6UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:2,324
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Product details
Overview
DMN1004UFDF-7 from Diodes Incorporated is a 12V N-channel enhancement-mode MOSFET in U-DFN2020-6 (Type F) package, delivering 4.8mΩ RDS(ON) at VGS = 4.5V and 15A continuous drain current at TA = +25°C. It features ESD-protected gate, low 0.6mm profile, and 4mm² PCB footprint-optimized for compact, high-efficiency power management switches in portable and space-constrained systems.
For engineers reviewing the DMN1004UFDF-7 datasheet, DMN1004UFDF-7 pinout, DMN1004UFDF-7 application, or DMN1004UFDF-7 equivalent, key selection criteria include its low gate threshold (0.3–1.0V), 72°C/W thermal resistance on 2oz copper board, 26nC total gate charge at 4.5V, and AEC-Q qualified automotive-grade availability via Q-suffix variants.
Technical Context
This MOSFET employs a trench-gate silicon process to achieve ultra-low on-resistance while maintaining fast switching performance: tD(ON) = 5.3ns, tF = 16.9ns, and QGD/QG ratio of ~20% ensures robust dv/dt immunity. Its body diode exhibits VSD = 0.6V typical at IS = 3.2A, supporting synchronous rectification and reverse recovery–sensitive topologies.
The device operates across –55°C to +150°C junction temperature range with normalized RDS(ON) drift <1.8× over full range at VGS = 4.5V. Gate drive compatibility extends down to 2.5V logic (RDS(ON) = 7.0mΩ), enabling direct interfacing with 3.3V microcontrollers without level-shifting.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 12V - Maximum blocking voltage for 3.3V/5V rail-level switching applications |
| RDS(ON) | 4.8mΩ @ VGS = 4.5V - Enables ≤75mW conduction loss at 15A, critical for thermally constrained layouts |
| ID (continuous) | 15A @ TA = +25°C - Sustained load capability on optimized 2oz FR-4 PCB with thermal pad |
| QG | 26nC @ VGS = 4.5V - Low gate drive energy reduces controller loading and switching losses |
| RθJA | 72°C/W - Achieved with bottom-side thermal pad and 1-inch² copper pour; enables >1.5W dissipation at ΔT = 108°C |
| VGS(TH) | 0.3–1.0V - Ensures reliable turn-on with 1.8V/2.5V/3.3V logic outputs without external bias |
| CISS | 2385pF - Predictable input capacitance supports stable gate driver sizing and EMI estimation |
Pinout & Package
U-DFN2020-6 (Type F) package: 2.0mm × 2.0mm × 0.6mm body with exposed thermal pad (Pin 6), NiPdAu-plated terminals, moisture sensitivity level 1, UL 94V-0 molding compound.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals reduce bond-wire inductance and improve current sharing in high-di/dt switching |
| 5 | Gate (G) | Single gate input with integrated ESD protection diode to VDD and VSS; requires no external gate resistor for basic logic-level drive |
| 6 | Drain (D) | Exposed drain paddle - primary thermal path to PCB; must be soldered to solid copper pour for rated power dissipation |
Key Features
| Feature | Design Value |
|---|---|
| Low-profile packaging | 0.6mm height enables use in ultra-thin consumer wearables and stacked PCB assemblies |
| ESD-protected gate | HBM rating ≥2kV per JESD22-A114 - eliminates need for external gate protection in automated assembly lines |
| Lead-free & green compliance | Halogen- and antimony-free (<900ppm Br+Cl, <1000ppm Sb); RoHS 3 and JEDEC High Reliability qualified |
| Optimized gate charge ratio | QGD/QG ≈ 20% - improves Miller immunity and reduces risk of spurious turn-on in half-bridge configurations |
| Thermal pad integration | Pin 6 (Drain) serves as thermal interface - achieves 22°C/W RθJC when mounted to 1-inch² copper plane |
Applications
| Battery Protection Circuit | USB-C Power Delivery Switch |
|---|---|
|
Use Scenario: Bidirectional overvoltage/overcurrent protection in single-cell Li-ion battery packs with integrated fuel gauging. IC Role / Device Role / Timing Role: High-side main switch controlling charge/discharge path; driven by dedicated battery protection IC (e.g., DW01A). Use Value: 4.8mΩ RDS(ON) limits voltage drop to <72mV at 15A, preserving state-of-charge accuracy and reducing thermal stress on adjacent analog sensors. |
Use Scenario: 5–20V bidirectional power path control in USB-C PD sink devices requiring dynamic role swapping. IC Role / Device Role / Timing Role: Low-side OR-ing switch enabling seamless transition between adapter and battery power sources. Use Value: 0.3–1.0V gate threshold ensures clean turn-on with 3.3V PD controller GPIOs; 26nC QG supports <500kHz soft-start sequencing. |
| Portable Medical Sensor Node | Smart Home IoT Hub Power Rail |
|
Use Scenario: Load switching for precision analog front-end (AFE) modules powered from coin-cell or energy-harvesting sources. IC Role / Device Role / Timing Role: Ultra-low-leakage enable switch isolating AFE during sleep mode; controlled by MCU GPIO. Use Value: IDSS ≤1µA at VDS = 9.6V minimizes standby current drain; 0.6mm profile allows placement beneath compact sensor housings. |
Use Scenario: Independent 3.3V/5V rail control for Zigbee, Thread, and BLE radio subsystems in multi-radio edge gateways. IC Role / Device Role / Timing Role: Individual power-gating MOSFET per radio domain, sequenced via PMIC-controlled GPIOs. Use Value: 4mm² footprint enables dense multi-rail layout; 72°C/W RθJA sustains 1.2W peak load without thermal derating in enclosed enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN10H400L-7 | Higher VDSS (100V), higher RDS(ON) (4.0mΩ @ 10V), 4.5V gate drive not characterized | Designed for 12–48V industrial DC-DC stages; unsuitable for 3.3V logic drive | Select only if system requires >12V blocking and gate is driven from 10V supply |
| AO3400A | Same U-DFN2020-6 package, but RDS(ON) = 28mΩ @ 2.5V; no ESD protection; RθJA = 150°C/W | Limited to low-current (<3A), non-automotive, non-reliability-critical uses | Acceptable for cost-sensitive consumer accessories where thermal margin and ESD robustness are secondary |
Compared with DMN1004UFDF-7, DMN10H400L-7 trades logic-level compatibility for higher voltage resilience, while AO3400A sacrifices on-resistance, thermal performance, and gate protection to meet aggressive BOM cost targets-neither matches the balanced efficiency, reliability, and ease-of-use profile of the DMN1004UFDF-7 in compact 12V power-switching roles.
Availability
DMN1004UFDF-7 is available at Aetrix Electronics and suitable for battery protection circuits, USB-C power delivery switches, portable medical sensor nodes, and smart home IoT hub power rails requiring stable component supply and long-term manufacturability.
Supply support for DMN1004UFDF-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
This MOSFET belongs to Diodes' "Ultra-Low RDS(ON) Logic-Level" product line, engineered specifically for high-density, thermally constrained power management in portable and battery-powered electronics.
FAQ
What is the maximum continuous drain current at 70°C ambient?
The DMN1004UFDF-7 supports 12A continuous drain current at TA = +70°C when mounted on a 2oz FR-4 PCB with thermal bias to a 1-inch² copper plate, per Note 6 in the datasheet. This derating reflects thermal resistance of 72°C/W and maximum junction temperature of +150°C.
Is the U-DFN2020-6 (Type F) package compatible with standard reflow profiles?
Yes-the device is qualified to JEDEC J-STD-020 moisture sensitivity level 1 and supports standard lead-free reflow profiles (peak temperature ≤260°C). The NiPdAu terminal finish ensures reliable solderability per MIL-STD-202, Method 208, and the 0.6mm profile avoids tombstoning in fine-pitch placement.
Does this MOSFET require an external gate resistor for 3.3V MCU drive?
No external gate resistor is required for basic on/off switching with 3.3V microcontrollers, as the gate threshold (0.3–1.0V) and low input capacitance (2385pF) allow full enhancement using typical GPIO drive strength. A small series resistor (≤10Ω) may be added only if ringing or EMI mitigation is needed in high-di/dt layouts.
How is the exposed drain paddle (Pin 6) intended to be connected on the PCB?
Pin 6 is the drain terminal and must be soldered directly to a solid copper pour serving as both electrical connection and primary thermal path. The recommended pad layout specifies a 1.7mm × 2.3mm thermal pad with 0.4mm solder mask opening; thermal vias to inner ground planes are strongly advised to maintain RθJA ≤72°C/W.
DMN1004UFDF-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 12 V
- Current - Continuous Drain (Id) @ 25°C:
- 15A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 4.8mOhm @ 15A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 47 nC @ 10 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2385 pF @ 6 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.1W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6
DMN1004UFDF-7 FAQ
1.How can I place an order for DMN1004UFDF-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN1004UFDF-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN1004UFDF-7 reliable?
The price and inventory of DMN1004UFDF-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN1004UFDF-7 is usually 5 days.
3.What payment methods are accepted for DMN1004UFDF-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN1004UFDF-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN1004UFDF-7?
DMN1004UFDF-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN1004UFDF-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN1004UFDF-7?
For technical support, including DMN1004UFDF-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN1004UFDF-7 requirements.
6.How does Aetrix verify that DMN1004UFDF-7 is sourced from the original manufacturer or authorized distributors?
All DMN1004UFDF-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN1004UFDF-7 meets industry standards.
7.What is the process for return or replacement of DMN1004UFDF-7?
All DMN1004UFDF-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN1004UFDF-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN1004UFDF-7 part is unused and in its original packaging.
Return procedure for DMN1004UFDF-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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