Diodes Incorporated DMN1006UCA6-7

Overview

DMN1006UCA6 from Diodes Incorporated is an N-channel enhancement-mode MOSFET in a 6-terminal CSP package (X3-DSN2718-6), rated for 12 V V_SSS, 5.3 mΩ R_SS(ON) at V_GS = 3.8 V and I_S = 3 A, and 16.6 A continuous source current at T_A = +25°C - optimized for low-voltage battery protection and load switching in space-constrained portable electronics.

For engineers reviewing the DMN1006UCA6 datasheet, DMN1006UCA6 pinout, DMN1006UCA6 application, or DMN1006UCA6 equivalent, key selection criteria include ultra-low on-resistance at 3.8 V gate drive, 0.21 mm profile for thin-profile battery packs, ESD-protected gate, and thermal resistance of 51.5 °C/W under recommended PCB layout - critical for thermally dense power path designs.

Technical Context

This MOSFET employs a trench-gate silicon process to achieve sub-6 mΩ on-resistance while maintaining fast switching via low gate charge (Q_g = 35.2 nC) and minimized output capacitance (C_oss = 666 pF). Its 12 V breakdown voltage and ±12 V gate rating support single-cell Li-ion and USB PD 3.0 auxiliary power rail applications.

The device operates across –55°C to +150°C junction temperature range and features integrated body diode with V_FSS = 0.7–1.2 V at I_S = 3 A, enabling synchronous rectification and reverse-current blocking in bidirectional battery management paths without external diodes.

Key Specifications

Pinout & Package

Package: X3-DSN2718-6 - 2.70 mm × 1.81 mm × 0.21 mm chip-scale package with NiPdAu-plated terminals, moisture sensitivity level 1, and 0.0026 g mass.

Key Features

Applications

Availability

DMN1006UCA6 is available at Aetrix Electronics and suitable for battery protection circuits, USB-C load switching, and portable medical sensor power gating requiring stable component supply, long-term lifecycle assurance, and RoHS 3-compliant sourcing.

Supply support for DMN1006UCA6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power management, signal integrity, and protection solutions for consumer, industrial, and automotive markets.

The DMN1006UCA6 belongs to Diodes' Ultra-Low R_DS(on) CSP MOSFET product line, engineered specifically for space- and thermally constrained battery-powered devices where on-resistance, profile height, and gate drive compatibility are primary design constraints.

FAQ

What is the maximum continuous drain current at 70°C ambient?

At T_A = +70°C, the DMN1006UCA6 supports 13.2 A continuous source current when V_GS = 4.5 V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations under standard FR-4 PCB conditions with 1 in² copper area.

Does this MOSFET require external gate resistors for EMI control?

No external gate resistor is required for basic operation due to its low Q_g and optimized internal structure. However, a 1–5 Ω series resistor is recommended in high-di/dt applications (>5 A/ns) to dampen ringing and meet CISPR-22 Class B emissions limits in portable designs.

Can DMN1006UCA6 be used in automotive AEC-Q101 qualified designs?

The DMN1006UCA6 is not AEC-Q101 qualified. Diodes Incorporated offers AEC-Q101 variants (e.g., DMN1006UCB6) with PPAP documentation and IATF 16949 manufacturing; contact Diodes sales for automotive-grade alternatives with full qualification data.

How is thermal performance affected if the exposed drain pad is not soldered?

Leaving the exposed drain pad (Terminal E) unsoldered increases R_θJA from 51.5 °C/W to 124.6 °C/W, reducing allowable power dissipation from 2.4 W to 1.0 W. Full thermal performance requires soldering Terminal E to a minimum 100 mm² PCB copper pour with ≥4 thermal vias.