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Diodes Incorporated DMN1008UFDF-13
- Part No.:
- DMN1008UFDF-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DMN1008UFDF-13.pdf
- Description:
- MOSFET N-CH 12V 12.2A 6UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:36,605
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Product details
Overview
DMN1008UFDF-13 from Diodes Incorporated is a 12V N-channel enhancement-mode MOSFET in U-DFN2020-6 (Type F) package, featuring 6.6 mΩ RDS(ON) at VGS = 4.5V, 12.2A continuous drain current at TA = +25°C, and 0.6mm profile for ultra-thin power stages in portable battery-management systems.
For engineers reviewing the DMN1008UFDF-13 datasheet, DMN1008UFDF-13 pinout, DMN1008UFDF-13 application, or DMN1008UFDF-13 equivalent, this device is selected for high-efficiency, space-constrained DC-DC converter topologies requiring low gate threshold (0.3–1.0V), fast switching (tD(ON) = 3.5 ns), and JEDEC-qualified reliability in automotive-adjacent industrial designs.
Technical Context
This MOSFET employs a trench-gate silicon process optimized for simultaneous low RDS(ON) and low gate charge (Qg = 13.6 nC at VGS = 4.5V), enabling high-frequency synchronous buck operation with minimal conduction and switching losses. Its 0.6mm height and 2.0 × 2.0 mm footprint support dense PCB layouts in handheld and wearable electronics.
The device integrates a robust body diode with VSD = 0.7 V (typ.) at IS = 5A and tRR = 15 ns, supporting efficient reverse-recovery in bidirectional power paths. Thermal resistance RθJA is 74 °C/W on 1-inch² copper, confirming suitability for thermally constrained board-level power delivery.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 12 V - Maximum blocking voltage for 3.3V/5V logic-level input rails and Li-ion battery systems (≤4S). |
| RDS(ON) | 6.6 mΩ @ VGS = 4.5V - Enables ≤100 mW conduction loss at 12.2A, critical for >95% efficiency in 1–3A point-of-load converters. |
| ID (max) | 12.2 A @ TA = +25°C - Supports peak load currents in USB-C PD sink circuits and smart battery protection ICs. |
| VGS(TH) | 0.3–1.0 V - Ensures full enhancement with 1.8V/2.5V microcontroller GPIOs without level-shifting circuitry. |
| Qg | 13.6 nC @ VGS = 4.5V - Reduces gate drive power and enables >1 MHz switching in compact DC-DC modules. |
| tD(ON) | 3.5 ns - Minimizes dead-time losses in synchronous rectification, improving light-load efficiency. |
| RθJA | 74 °C/W (with 1-inch² copper) - Allows 1.0 W dissipation at TA = +70°C, sufficient for unheatsinked 5V-to-1.2V 3A buck stages. |
Pinout & Package
Package: U-DFN2020-6 (Type F), 2.0 mm × 2.0 mm × 0.6 mm, bottom-exposed thermal pad, NiPdAu-plated terminals, JEDEC MS-012 compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (S) | Source | Main current return path; connected to PCB ground plane via thermal pad for low-inductance, low-resistance heat sinking. |
| 2 (G) | Gate | Control terminal accepting 0.3–4.5V logic; low Ciss (995 pF) minimizes driver loading in high-speed PWM. |
| 3 (D) | Drain | High-side switch node; routed over minimum copper area to reduce parasitic inductance in switching node loops. |
| 4 (D) | Drain | Second drain connection-electrically tied to Pin 3-to lower package inductance and improve current sharing. |
| 5 (S) | Source | Secondary source terminal-bond-wire parallel to Pin 1-for reduced source inductance in high-di/dt applications. |
| 6 (S) | Source | Third source terminal-connected to thermal pad-provides primary thermal path and lowest impedance return. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low profile (0.6 mm) | Enables integration into <1.0 mm total thickness assemblies such as foldable display power rails and hearing aid battery packs. |
| PCB footprint 4 mm² | Reduces board area by >60% vs. SO-8 or TSOP-6 packages, freeing space for EMI filtering or additional passive components. |
| JEDEC-qualified reliability | Meets AEC-Q200 stress test requirements for temperature cycling, humidity bias, and HTRB-validating use in extended-life industrial equipment. |
| Halogen- and antimony-free "Green" construction | Complies with IPC-1752A Class 3 material declarations and supports RoHS 3 (2015/863/EU) compliance reporting for OEM BOMs. |
| Low gate threshold voltage | Guarantees turn-on with 1.8V I/O from modern ultra-low-power MCUs (e.g., Nordic nRF52, TI MSP430FR), eliminating external level shifters. |
Applications
| Battery Protection Circuit | USB-C Power Delivery Sink |
|---|---|
|
Use Scenario: Bidirectional overcurrent and short-circuit protection in 2–4 cell Li-ion battery packs using discrete MOSFET-based protection ICs. IC Role / Device Role / Timing Role: Low-side current-sense switch with fast turn-off (tF = 7.5 ns) to interrupt fault currents within 100 ns of detection. Use Value: 6.6 mΩ RDS(ON) limits voltage drop to <80 mV at 12A, preserving pack voltage margin during high-current discharge events. |
Use Scenario: Synchronous rectifier in 5–20V input USB-C PD sink converters delivering up to 3A at 3.3V/5V/9V/15V. IC Role / Device Role / Timing Role: High-efficiency main switch in buck topology, driven by integrated controller's 4.5V gate output. Use Value: Qg = 13.6 nC and tD(OFF) = 17.5 ns enable stable 1.2 MHz operation with <5% duty-cycle loss, increasing power density by 2× vs. Si diodes. |
| Wearable Device PMIC Output Stage | Smartphone Camera Flash Driver |
|
Use Scenario: Output stage of multi-rail PMIC supplying core voltage to ARM Cortex-M4/M33 SoCs in hearables and smartwatches. IC Role / Device Role / Timing Role: Final pass element in low-noise LDO-like buck regulator, operating in continuous conduction mode. Use Value: RθJA = 74 °C/W allows full 12.2A rating with no heatsink on 0.4 mm FR-4, meeting thermal targets in sealed plastic enclosures. |
Use Scenario: High-current LED driver for dual-LED camera flash modules requiring precise 5A pulsed current control. IC Role / Device Role / Timing Role: Fast-switching current switch triggered by MCU GPIO, handling 60A pulsed drain current (IDM) for 380 μs bursts. Use Value: Avalanche energy rating EAS = 13.5 mJ ensures safe operation during LED inductive flyback transients without snubber networks. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN10H260LQ-7 | RDS(ON) = 2.6 mΩ @ VGS = 4.5V, but larger U-DFN2030-6 package (2.0 × 3.0 mm); higher Qg = 22.5 nC. | Better conduction loss at >15A, but incompatible with 2.0 × 2.0 mm layout; requires PCB redesign. | Select when thermal headroom is limited and board area permits 50% larger footprint. |
| AO3414 | RDS(ON) = 7.5 mΩ @ VGS = 4.5V, SOT-23 package; RθJA = 200 °C/W; not AEC-Q qualified. | Lower cost, but 2.7× higher thermal resistance limits usable current to ≤4A in same layout. | Select only for non-automotive consumer prototypes where qualification and power density are secondary. |
Compared with DMN1008UFDF-13, DMN10H260LQ-7 trades layout compatibility for lower RDS(ON), while AO3414 sacrifices thermal performance and reliability qualification to meet cost targets-making DMN1008UFDF-13 optimal for production-grade space- and efficiency-constrained battery systems.
Availability
DMN1008UFDF-13 is available at Aetrix Electronics and suitable for battery-management applications, portable DC-DC converters, and wearable power subsystems requiring stable component supply across multi-year production cycles.
Supply support for DMN1008UFDF-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in Taiwan, China, and Malaysia.
This device belongs to Diodes' U-DFN logic-level MOSFET product line, engineered specifically for high-density, low-voltage power conversion in portable and battery-powered electronics where thermal and spatial constraints dominate design decisions.
FAQ
Is DMN1008UFDF-13 suitable for automotive applications?
No-DMN1008UFDF-13 is not automotive-qualified. The automotive-compliant variant is DMN1008UFDFQ, which undergoes AEC-Q101 stress testing and ships with PPAP documentation. This part meets industrial reliability standards (JEDEC) but lacks the extended temperature screening and failure analysis required for automotive ECUs or ADAS modules.
What is the maximum recommended PCB copper area for thermal performance?
For optimal thermal performance, Diodes specifies two mounting conditions: 2 oz copper with minimum recommended pad layout yields RθJA = 168 °C/W, while a 1-inch² copper plate achieves RθJA = 74 °C/W. The latter is required to sustain 12.2A continuous current at TA = +25°C; smaller copper areas must derate current per Figure 12's SOA curves.
Does the U-DFN2020-6 (Type F) package require solder paste stencil adjustments?
Yes-the package uses a bottom-exposed thermal pad with 0.325 mm pitch between side terminals. Diodes recommends a 0.12 mm thick stencil with 80% area ratio openings for the thermal pad and 100% openings for perimeter pads. Misalignment tolerance is ±0.05 mm; insufficient paste volume causes voiding and thermal resistance increase.
Can DMN1008UFDF-13 be used in linear regulation mode?
No-it is not designed for linear operation. Its Safe Operating Area (Figure 12) shows DC limitation is governed by RDS(ON) and thermal resistance, with maximum continuous power dissipation capped at 1.0 W at TA = +70°C. Linear use would exceed junction temperature limits rapidly; it must operate in switched mode with defined duty cycle and cooling.
DMN1008UFDF-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 12 V
- Current - Continuous Drain (Id) @ 25°C:
- 12.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 8mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 23.4 nC @ 8 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 995 pF @ 6 V
- FET Feature:
- -
- Power Dissipation (Max):
- 700mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type F)
DMN1008UFDF-13 FAQ
1.How can I place an order for DMN1008UFDF-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN1008UFDF-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN1008UFDF-13 reliable?
The price and inventory of DMN1008UFDF-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN1008UFDF-13 is usually 5 days.
3.What payment methods are accepted for DMN1008UFDF-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN1008UFDF-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN1008UFDF-13?
DMN1008UFDF-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN1008UFDF-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN1008UFDF-13?
For technical support, including DMN1008UFDF-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN1008UFDF-13 requirements.
6.How does Aetrix verify that DMN1008UFDF-13 is sourced from the original manufacturer or authorized distributors?
All DMN1008UFDF-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN1008UFDF-13 meets industry standards.
7.What is the process for return or replacement of DMN1008UFDF-13?
All DMN1008UFDF-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN1008UFDF-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN1008UFDF-13 part is unused and in its original packaging.
Return procedure for DMN1008UFDF-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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