My Inquiry
My Account
Diodes Incorporated DMN1008UFDF-7
- Part No.:
- DMN1008UFDF-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DMN1008UFDF-7.pdf
- Description:
- MOSFET N-CH 12V 12.2A 6UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:893
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
DMN1008UFDF-7 from Diodes Incorporated is a 12V N-channel enhancement-mode MOSFET in U-DFN2020-6 (Type F) package, optimized for high-efficiency power management with RDS(ON) = 6.6 mΩ @ VGS = 4.5V, 5A, continuous drain current of 12.2A at TA = +25°C, and fast switching (tD(ON) = 3.5 ns). It serves as a synchronous rectifier or load switch in compact DC-DC converters.
For engineers reviewing the DMN1008UFDF-7 datasheet, DMN1008UFDF-7 pinout, DMN1008UFDF-7 application, or DMN1008UFDF-7 equivalent, key selection criteria include low gate threshold (VGS(TH) max = 1.0 V), ultra-low profile (0.6 mm height), 4 mm² PCB footprint, thermal resistance RθJA = 74 °C/W (with 1-inch copper pad), and AEC-Q–qualified reliability for automotive-adjacent designs.
Technical Context
This MOSFET employs a trench-gate silicon process to achieve sub-10 mΩ on-resistance at logic-level gate drive (2.5–4.5 V), enabling direct interfacing with 3.3 V or 5 V microcontrollers without gate drivers. Its low Ciss (995 pF) and Crss (270 pF) support high-frequency operation up to 1 MHz in buck converters.
The device integrates a body diode with VSD = 0.7 V (typ.) at IS = 5 A and exhibits robust avalanche capability (EAS = 13.5 mJ, IAS = 16.4 A), supporting unclamped inductive switching in battery protection circuits and motor drives.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 12 V - Maximum blocking voltage for 1-cell Li-ion and USB PD 3.0 input stages |
| RDS(ON) | 6.6 mΩ @ VGS = 4.5 V, ID = 5 A - Enables <100 mW conduction loss at 10 A in 12 V/10 A point-of-load rails |
| ID (continuous) | 12.2 A @ TA = +25°C - Supports >10 W power delivery with minimal derating on standard FR-4 |
| VGS(TH) | 0.3–1.0 V - Ensures reliable turn-on with 1.8 V GPIOs and eliminates need for level-shifting in ultra-low-voltage systems |
| Qg | 13.6 nC @ VGS = 4.5 V - Allows efficient 1 MHz switching with <1 W gate drive power using 5 Ω driver |
| RθJA | 74 °C/W (with 1-inch copper pad) - Limits junction rise to <75°C at 1.0 W dissipation, enabling fanless operation |
| tD(ON) | 3.5 ns - Reduces dead-time losses in synchronous buck topologies operating above 500 kHz |
Pinout & Package
Package: U-DFN2020-6 (Type F), 2.0 × 2.0 × 0.6 mm, bottom-exposed thermal pad, NiPdAu-plated terminals, JEDEC Moisture Sensitivity Level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (S) | Source | Common return path for load current; tied to PCB thermal pad for enhanced heat transfer |
| 2 (G) | Gate | Control terminal; low Ciss/Crss enables stable PWM control with minimal ringing |
| 3 (D) | Drain | High-side or low-side power node; connects to input rail (high-side) or ground (low-side) |
| 4 (S) | Source | Second source connection-electrically tied to Pin 1; improves current sharing and thermal spreading |
| 5 (D) | Drain | Second drain connection-electrically tied to Pin 3; reduces parasitic inductance in high-di/dt paths |
| 6 (D) | Drain | Third drain connection-electrically tied to Pins 3 & 5; maximizes current-carrying capacity and thermal interface |
Key Features
| Feature | Design Value |
|---|---|
| 0.6 mm profile | Enables integration into space-constrained wearable and IoT modules where Z-height ≤ 0.7 mm is mandatory |
| 4 mm² PCB footprint | Reduces board area by >40% vs. SO-8 or PowerPAK 1212-8, lowering material cost in high-volume consumer power supplies |
| Low VGS(TH) | Guarantees turn-on with 1.8 V logic; eliminates external bias networks in battery-fueled sensor nodes |
| JEDEC-qualified reliability | Validated per AEC-Q200 stress tests-supports industrial temperature range (-55°C to +150°C) and long-term field deployment |
| Halogen- and antimony-free "Green" construction | Meets IPC-1752A Class 2 reporting requirements and EU RoHS 3 (2015/863/EU) compliance without performance trade-offs |
Applications
| Battery Protection Circuit | USB-C Power Delivery Module |
|---|---|
|
Use Scenario: Reverse-current blocking and overcurrent cutoff in single-cell Li-ion packs for portable medical devices. IC Role / Device Role / Timing Role: Low-side load switch controlling discharge path; activated within 100 µs of fault detection. Use Value: RDS(ON) ≤ 8 mΩ minimizes voltage drop across protection FET, preserving usable battery capacity by >2.1% at 5 A discharge. |
Use Scenario: Synchronous rectification in 20 W USB-C buck-boost chargers for smartphones and earbuds. IC Role / Device Role / Timing Role: High-efficiency output switch replacing Schottky diode; driven by controller PWM at 800 kHz. Use Value: Qg = 13.6 nC and tF = 7.5 ns reduce switching losses by 38% vs. comparable 12 V MOSFETs, improving full-load efficiency to 94.2%. |
| Industrial Sensor Node Power Rail | Automotive Body Control Module (BCM) Load Switch |
|
Use Scenario: Always-on 3.3 V rail regulation for LoRaWAN edge sensors powered by coin-cell or energy harvesters. IC Role / Device Role / Timing Role: Ultra-low-IQ high-side switch enabling <1 µA standby leakage when off. Use Value: VGS(TH) ≤ 1.0 V ensures clean turn-off at 1.8 V supply, preventing false wake-up during brown-out conditions. |
Use Scenario: Controlled power gating for LED lighting and window lift actuators in 12 V automotive subsystems. IC Role / Device Role / Timing Role: AEC-Q200–qualified load switch with integrated ESD protection (HBM > 2 kV) and reverse-battery tolerance. Use Value: Avalanche rating (IAS = 16.4 A) withstands inductive kickback from 500 mA solenoid loads without external clamping diodes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN1008UFDFQ-7 | Identical electrical specs; qualified per AEC-Q101 (automotive grade) with extended temperature screening and traceability | Required for production automotive ECUs; not necessary for industrial or consumer use | Select DMN1008UFDFQ-7 only if ISO/TS 16949-compliant PPAP documentation and lot-level test reports are mandated |
| NTMFS4C06NT1G | RDS(ON) = 5.2 mΩ @ VGS = 4.5 V but larger 3.3 × 3.3 mm SO-8FL package; higher RθJA = 50 °C/W (with heatsink) | Better conduction loss at high current (>15 A), but incompatible with ultra-compact layouts | Choose NTMFS4C06NT1G when thermal headroom is constrained and board area allows ≥10.8 mm² footprint |
Compared with DMN1008UFDF-7, DMN1008UFDFQ-7 adds automotive qualification overhead without electrical benefit, while NTMFS4C06NT1G trades size for lower RDS(ON)-making the original optimal for space-limited, thermally moderate 10–12 A applications.
Availability
DMN1008UFDF-7 is available at Aetrix Electronics and suitable for battery-management applications, DC-DC converters, and power-management functions requiring stable component supply and rapid prototyping support.
Supply support for DMN1008UFDF-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in Taiwan, China, and Malaysia.
The DMN1008UFDF belongs to Diodes' "Ultra-Low Profile Power MOSFET" product line, engineered specifically for miniaturized, high-efficiency power conversion in portable and automotive-adjacent electronics.
FAQ
What is the maximum safe operating junction temperature for DMN1008UFDF-7?
The absolute maximum junction temperature is +150°C, validated across all operating conditions per datasheet Section 3. Thermal derating begins at +70°C ambient for continuous operation on standard FR-4 (RθJA = 168 °C/W); with 1-inch copper pad, full 12.2 A rating is maintained up to +70°C ambient.
Does DMN1008UFDF-7 require a gate resistor for stability in 1 MHz switching?
Yes-a 2–5 Ω series gate resistor is recommended to dampen ringing caused by Lg–Ciss resonance. The device's low Rg (1.5 Ω typ.) and Ciss (995 pF) make it susceptible to overshoot without controlled gate drive impedance, especially with PCB trace inductance >1 nH.
Can DMN1008UFDF-7 be used in high-side configuration with 12 V supply?
No-it is an N-channel MOSFET with no integrated charge pump or bootstrap circuitry. High-side operation requires external gate boosting (e.g., bootstrap capacitor + driver IC like MP6540) to achieve VGS ≥ 4.5 V relative to the switched drain node.
Is the thermal pad on U-DFN2020-6 (Type F) electrically connected to any terminal?
Yes-the exposed thermal pad is internally connected to the Source (S) terminals (Pins 1 and 4). It must be soldered to a dedicated PCB copper pour tied to the system ground plane to achieve specified RθJA = 74 °C/W and ensure mechanical reliability.
DMN1008UFDF-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 12 V
- Current - Continuous Drain (Id) @ 25°C:
- 12.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 8mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 23.4 nC @ 8 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 995 pF @ 6 V
- FET Feature:
- -
- Power Dissipation (Max):
- 700mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type F)
DMN1008UFDF-7 FAQ
1.How can I place an order for DMN1008UFDF-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN1008UFDF-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN1008UFDF-7 reliable?
The price and inventory of DMN1008UFDF-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN1008UFDF-7 is usually 5 days.
3.What payment methods are accepted for DMN1008UFDF-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN1008UFDF-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN1008UFDF-7?
DMN1008UFDF-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN1008UFDF-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN1008UFDF-7?
For technical support, including DMN1008UFDF-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN1008UFDF-7 requirements.
6.How does Aetrix verify that DMN1008UFDF-7 is sourced from the original manufacturer or authorized distributors?
All DMN1008UFDF-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN1008UFDF-7 meets industry standards.
7.What is the process for return or replacement of DMN1008UFDF-7?
All DMN1008UFDF-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN1008UFDF-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN1008UFDF-7 part is unused and in its original packaging.
Return procedure for DMN1008UFDF-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMN1008UFDF-7 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
