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Diodes Incorporated DMN1008UFDFQ-13
- Part No.:
- DMN1008UFDFQ-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DMN1008UFDFQ-13.pdf
- Description:
- MOSFET BVDSS: 8V~24V U-DFN2020-6
- Quantity:
- Payment:
- Shipping:
Inventory:9,242
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Product details
Overview
DMN1008UFDFQ-13 from Diodes Incorporated is an AEC-Q101 qualified 12V N-channel enhancement-mode MOSFET in U-DFN2020-6 (Type F) package, featuring 8 mΩ RDS(ON) @ VGS = 4.5V, 12.2A ID (TA = +25°C), and 0.6 mm profile-designed for high-density automotive battery management and DC-DC converter power stages.
For engineers reviewing the DMN1008UFDFQ-13 datasheet, DMN1008UFDFQ-13 pinout, DMN1008UFDFQ-13 application, or DMN1008UFDFQ-13 equivalent, key selection criteria include low-threshold gate drive compatibility (VGS(TH) = 0.3–1.0 V), thermally robust 12 °C/W RθJC, and PPAP-capable automotive qualification under IATF 16949.
Technical Context
This MOSFET employs a trench-gate silicon process optimized for low RDS(ON) at logic-level gate drive (2.5–4.5 V), enabling direct interface with 3.3 V/5 V microcontrollers without level-shifting. Its 0.6 mm height and 4 mm² footprint support ultra-thin power modules in space-constrained automotive ECUs.
The device integrates a body diode with 0.7–1.2 V forward voltage (VSD) at 5 A and exhibits fast switching dynamics: tD(ON) = 3.5 ns, tF = 7.5 ns, and Qgd = 3.3 nC-critical for minimizing conduction and switching losses in synchronous buck topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 12 V - Maximum drain-source blocking voltage compatible with 12 V automotive battery rails. |
| RDS(ON) | 8 mΩ @ VGS = 4.5 V - Enables <100 mW conduction loss at 10 A, supporting high-efficiency power stages. |
| ID (max) | 12.2 A @ TA = +25°C - Sustains continuous load current in compact thermal layouts with 1.7 W PD rating. |
| VGS(TH) | 0.3–1.0 V - Ensures reliable turn-on with low-voltage controllers and reduces gate drive power consumption. |
| Qg | 13.6 nC @ VGS = 4.5 V - Low total gate charge enables fast switching with minimal driver stress in high-frequency converters. |
| RθJC | 12 °C/W - Provides predictable junction-to-case thermal path for direct heatsink mounting or copper-pour PCB thermal management. |
| Ciss | 995 pF - Input capacitance supports stable gate drive design with standard 2 Ω source impedance per datasheet test condition. |
Pinout & Package
Package: U-DFN2020-6 (Type F), 2.0 × 2.0 × 0.6 mm, molded green plastic (UL 94V-0), NiPdAu-plated terminals, MSL Level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal (S) | Primary current return path; electrically tied to exposed thermal pad for enhanced heat dissipation. |
| Pin 2 (Gate) | Control input (G) | Low-threshold MOSFET gate requiring ≤1.0 V for turn-on; sensitive to ESD-requires proper layout guard ring. |
| Pin 3 (Drain) | Power output (D) | Main high-side or low-side switching node; connects to load or inductor in DC-DC stage. |
| Pin 4 (Source) | Source terminal (S) | Second source connection-parallel path to Pin 1 for reduced resistance and improved current sharing. |
| Pin 5 (Drain) | Power output (D) | Second drain connection-parallel path to Pin 3 for lower RDS(ON) and reduced package inductance. |
| Pin 6 (Drain) | Power output (D) | Third drain connection-enhances current handling and thermal spreading across top-side copper area. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low profile (0.6 mm) | Enables integration into slim automotive modules where Z-height is constrained by mechanical housing or adjacent components. |
| 4 mm² PCB footprint | Reduces board area by >50% vs. SO-8 equivalents-critical for multi-phase power delivery in ADAS domain controllers. |
| AEC-Q101 qualification & PPAP support | Validated for automotive use with full change control, traceable lot data, and IATF 16949 manufacturing compliance. |
| Lead-free, halogen-free, antimony-free | Meets RoHS 3 (2015/863/EU) and automotive "Green" standards (<900 ppm Br/Cl, <1000 ppm Sb). |
| Fast switching with low Qgd | 3.3 nC gate-drain charge minimizes Miller plateau duration, improving efficiency in 500 kHz–2 MHz DC-DC converters. |
Applications
| Battery Management System (BMS) | Automotive DC-DC Converter |
|---|---|
Use Scenario: High-side switch in 12 V battery disconnect and cell balancing circuits of EV/HEV battery packs. IC Role / Device Role / Timing Role: Power FET controlling bidirectional current flow between battery cells and balancing resistors during active equalization. Use Value: 8 mΩ RDS(ON) limits power loss to <1 W at 10 A, reducing thermal stress on compact BMS PCBs. | Use Scenario: Synchronous rectifier in 12 V → 3.3 V/5 V buck converter powering infotainment head units. IC Role / Device Role / Timing Role: Low-side switch operating at 1.2 MHz with tight dead-time control to minimize shoot-through risk. Use Value: 0.3–1.0 V VGS(TH) ensures clean turn-on with 3.3 V MCU GPIO, eliminating need for external level shifters. |
| Engine Control Unit (ECU) Power Stage | ADAS Camera Module Power Supply |
Use Scenario: Load switch for 12 V auxiliary rail powering fuel injector drivers and sensor interfaces. IC Role / Device Role / Timing Role: High-reliability power switch with fast turn-off (tF = 7.5 ns) to prevent overcurrent propagation during fault events. Use Value: 60 A pulsed drain rating (IDM) supports surge currents during cold-crank conditions without latch-up. | Use Scenario: Compact 12 V → 1.8 V point-of-load regulator in rear-view camera ECU with strict height limits. IC Role / Device Role / Timing Role: Main switching FET in integrated power module where 0.6 mm Z-height prevents interference with lens assembly. Use Value: 4 mm² footprint allows dual-phase layout in <100 mm² board area-meeting OEM mechanical envelope requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN10H120SFDFQ-7 | Higher VDSS (100 V), higher RDS(ON) (12 mΩ @ 4.5 V), same U-DFN2020-6 package | Suitable for 48 V mild-hybrid systems but over-specified for 12 V BMS | Select only if future-proofing for higher bus voltage or needing avalanche ruggedness (EAS = 230 mJ vs. 13.5 mJ). |
| NTMFS4C08NT1G | Same 12 V rating and 8 mΩ RDS(ON), but in 3.3 × 3.3 mm SO-8FL package; not AEC-Q101 qualified | Larger footprint and non-automotive qualification limit use to industrial/commercial DC-DC | Choose only for cost-sensitive non-automotive designs where AEC-Q101 and PPAP are not required. |
Compared with DMN10H120SFDFQ-7 and NTMFS4C08NT1G, the DMN1008UFDFQ-13 uniquely balances 12 V operation, automotive qualification, ultra-compact size, and logic-level drive-making it optimal for space- and reliability-constrained 12 V automotive power stages.
Availability
DMN1008UFDFQ-13 is available at Aetrix Electronics and suitable for battery management systems, automotive DC-DC converters, and engine control unit power stages requiring stable component supply, long-term lifecycle assurance, and AEC-Q101-compliant traceability.
Supply support for DMN1008UFDFQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal solutions for automotive, industrial, computing, and consumer markets.
This part belongs to Diodes' AEC-Q101-qualified U-DFN logic-level MOSFET product line, engineered specifically for high-efficiency, space-constrained automotive power conversion and load switching applications.
FAQ
What is the maximum allowable junction temperature for continuous operation?
The DMN1008UFDFQ-13 has an operating junction temperature range of –55°C to +150°C. For continuous operation, the absolute maximum TJ is +150°C, validated under steady-state conditions with appropriate PCB copper area (1-inch² 2 oz Cu per Note 6) and ambient derating per RθJA = 74°C/W.
Is the exposed thermal pad electrically connected to any internal terminal?
Yes-the exposed thermal pad on the bottom of the U-DFN2020-6 (Type F) package is internally connected to the Source (S) terminals (Pins 1, 4). It must be soldered to a large PCB copper pour tied to the source net to achieve specified RθJA and RθJC performance.
Does this MOSFET require a gate resistor for stability in automotive applications?
A gate resistor (typically 2–10 Ω) is recommended to dampen ringing caused by parasitic inductance in high-di/dt automotive environments. The datasheet specifies switching times using RG = 2 Ω, and layout best practices require short, low-inductance gate traces with local decoupling near the gate driver.
How does the RDS(ON) vary with temperature, and what is its value at 125°C?
RDS(ON) increases with junction temperature: at VGS = 4.5 V and ID = 5 A, it rises from ~6.6 mΩ at 25°C to ~10.5 mΩ at 125°C (per Figure 5 and Figure 7), representing ~60% increase-designers must verify conduction loss margins at worst-case TJ.
DMN1008UFDFQ-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 12 V
- Current - Continuous Drain (Id) @ 25°C:
- 12.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 8mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 23.4 nC @ 8 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 995 pF @ 6 V
- FET Feature:
- -
- Power Dissipation (Max):
- 700mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type F)
DMN1008UFDFQ-13 FAQ
1.How can I place an order for DMN1008UFDFQ-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN1008UFDFQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN1008UFDFQ-13 reliable?
The price and inventory of DMN1008UFDFQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN1008UFDFQ-13 is usually 5 days.
3.What payment methods are accepted for DMN1008UFDFQ-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN1008UFDFQ-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN1008UFDFQ-13?
DMN1008UFDFQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN1008UFDFQ-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN1008UFDFQ-13?
For technical support, including DMN1008UFDFQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN1008UFDFQ-13 requirements.
6.How does Aetrix verify that DMN1008UFDFQ-13 is sourced from the original manufacturer or authorized distributors?
All DMN1008UFDFQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN1008UFDFQ-13 meets industry standards.
7.What is the process for return or replacement of DMN1008UFDFQ-13?
All DMN1008UFDFQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN1008UFDFQ-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN1008UFDFQ-13 part is unused and in its original packaging.
Return procedure for DMN1008UFDFQ-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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