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Diodes Incorporated DMN1008UFDFQ-7
- Part No.:
- DMN1008UFDFQ-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DMN1008UFDFQ-7.pdf
- Description:
- MOSFET BVDSS: 8V~24V U-DFN2020-6
- Quantity:
- Payment:
- Shipping:
Inventory:4,075
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Product details
Overview
DMN1008UFDFQ-7 from Diodes Incorporated is an AEC-Q101 qualified 12V N-channel enhancement-mode MOSFET in U-DFN2020-6 (Type F) package, delivering 8 mΩ RDS(ON) at VGS = 4.5 V and 12.2 A continuous drain current at TA = +25°C. It serves as a high-efficiency power switch in automotive battery management and DC-DC converter primary/secondary-side switching stages.
For engineers reviewing the DMN1008UFDFQ-7 datasheet, DMN1008UFDFQ-7 pinout, DMN1008UFDFQ-7 application, or DMN1008UFDFQ-7 equivalent, key selection criteria include low-threshold gate drive compatibility with 2.5–4.5 V controllers, 0.6 mm profile for space-constrained PCBs, thermal resistance of 74 °C/W (with copper pad), and AEC-Q101 qualification for automotive-grade reliability.
Technical Context
This MOSFET employs a trench-gate silicon process optimized for low RDS(ON) and fast switching in 12 V automotive systems. Its gate threshold voltage range (0.3–1.0 V) enables direct drive from low-voltage microcontrollers and PMICs, while its 270 pF Crss and 13.6 nC total gate charge support efficient PWM operation up to several hundred kHz.
The device integrates a body diode with 0.7–1.2 V forward voltage at 5 A and exhibits 13.5 mJ single-pulse avalanche energy (L = 0.1 mH). Thermal design is enabled by RθJC = 12 °C/W and RθJA = 74 °C/W under 1-inch² copper, supporting stable operation up to TJ = +150°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 12 V - Maximum blocking voltage compatible with 12 V automotive battery rails and transient clamping requirements. |
| RDS(ON) | 8 mΩ @ VGS = 4.5 V - Enables <100 mW conduction loss at 10 A, critical for thermally constrained DC-DC phases. |
| ID (max) | 12.2 A @ TA = +25°C - Supports high-current load switching in battery disconnect and power path control. |
| Qg | 13.6 nC @ VGS = 4.5 V - Low gate charge reduces driver power and switching losses in high-frequency converters. |
| RθJA | 74 °C/W - Achieved with 1-inch² copper pad; allows ~1.0 W dissipation at TA = +70°C without active cooling. |
| TJ Range | −55°C to +150°C - Full operational range validated per AEC-Q101, suitable for under-hood environments. |
Pinout & Package
Package: U-DFN2020-6 (Type F), 2.0 × 2.0 × 0.6 mm, bottom-exposed thermal pad, NiPdAu-plated terminals, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; low 1.5 Ω gate resistance minimizes ringing; threshold 0.3–1.0 V enables 3.3 V logic compatibility. |
| 2 (S) | Source | Reference node for gate drive; tied to internal thermal pad for enhanced heat transfer to PCB. |
| 3 (D) | Drain | Main current path; connected to top-side metal; supports 60 A pulsed current (380 μs, 1% duty). |
| 4 (S) | Source | Second source connection; paralleled with Pin 2 to reduce source inductance and improve switching stability. |
| 5 (D) | Drain | Second drain connection; paralleled with Pin 3 to lower drain loop inductance in high-di/dt applications. |
| 6 (Thermal Pad) | Exposed Drain | Electrically connected to drain; must be soldered to PCB copper pour for thermal and electrical performance. |
Key Features
| Feature | Design Value |
|---|---|
| Low-profile footprint | 0.6 mm height and 4 mm² PCB area enable placement beneath connectors or in stacked modules. |
| Automotive qualification | AEC-Q101 qualified, PPAP-capable, manufactured in IATF 16949 facilities-meets Tier-1 supply chain requirements. |
| Fast switching | Turn-off delay 17.5 ns and fall time 7.5 ns (RG = 2 Ω) minimize dead-time losses in synchronous rectification. |
| Green construction | Halogen- and antimony-free, RoHS 3 compliant (<900 ppm Br/Cl, <1000 ppm Sb), UL 94V-0 molding compound. |
Applications
| Battery Disconnect Switch | DC-DC Converter High-Side Switch |
|---|---|
|
Use Scenario: Isolating 12 V battery from ECU during ignition-off to prevent parasitic drain. IC Role / Device Role / Timing Role: High-side load switch controlled by MCU GPIO; operates in linear mode during soft-start and saturated switching during steady state. Use Value: 8 mΩ RDS(ON) limits voltage drop to <100 mV at 12 A, preserving system wake-up margin; AEC-Q101 ensures 15-year field reliability. |
Use Scenario: Primary-side switch in 12 V → 3.3 V buck converter powering ADAS camera module. IC Role / Device Role / Timing Role: PWM-controlled power transistor switching at 500 kHz; body diode conducts freewheeling current during low-side interval. Use Value: 13.6 nC Qg and 270 pF Crss reduce gate drive loss and cross-conduction risk; 74 °C/W RθJA sustains 1.0 W dissipation at ambient +70°C. |
| Power Path Management | Motor Driver Half-Bridge Leg |
|
Use Scenario: Seamless switchover between vehicle battery and backup supercapacitor in telematics unit. IC Role / Device Role / Timing Role: Back-to-back configured N-channel MOSFET pair acting as bidirectional ideal diode with reverse-current blocking. Use Value: Low 0.3–1.0 V VGS(TH) enables precise gate control via dedicated ideal diode controller; 1.8 A continuous source current supports reverse conduction. |
Use Scenario: Low-side switch in H-bridge driving 12 V BLDC fan in HVAC control module. IC Role / Device Role / Timing Role: Synchronous rectifier in PWM-driven half-bridge; body diode handles inductive flyback during off-time. Use Value: 13.5 mJ EAS withstands inductive kickback without snubber; 15 ns tRR minimizes commutation loss and shoot-through risk. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN10H080LQ-7 | Higher RDS(ON) (8.0 mΩ @ 4.5 V same, but 12.5 mΩ @ 2.5 V vs. 11 mΩ); identical U-DFN2020-6 package. | Marginally higher conduction loss at low gate drive; otherwise pin- and footprint-compatible. | Select when cost sensitivity outweighs sub-1 mΩ RDS(ON) advantage at VGS = 2.5 V. |
| IPB080N04LGATMA1 | 40 V rating, TO-263 package, 0.8 mΩ RDS(ON); significantly larger footprint and higher thermal mass. | Not suitable for space-constrained automotive modules; better for high-current industrial DC-DC. | Choose only if 40 V blocking or >20 A current handling is required-otherwise incompatible with compact layout goals. |
Compared with DMN10H080LQ-7, the DMN1008UFDFQ-7 offers tighter RDS(ON) tolerance at low VGS, improving efficiency in 2.5 V–3.3 V controller designs; versus IPB080N04LGATMA1, it trades voltage headroom and current capacity for 90% smaller board area and faster switching.
Availability
DMN1008UFDFQ-7 is available at Aetrix Electronics and suitable for automotive battery management, DC-DC converter power stages, and motor driver half-bridges requiring stable component supply across multi-year production cycles.
Supply support for DMN1008UFDFQ-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets.
The DMN1008UFDFQ-7 belongs to Diodes' AEC-Q101-qualified U-DFN power MOSFET product line, engineered specifically for space- and thermal-constrained automotive power switching applications including battery disconnect, power path control, and DC-DC conversion.
FAQ
What is the maximum continuous drain current at 100°C ambient temperature?
At TA = +100°C, the DMN1008UFDFQ-7's continuous drain current is derated to approximately 6.5 A, based on its 74 °C/W RθJA and 150°C maximum junction temperature. This value assumes use of the recommended 1-inch² copper pad and no forced airflow.
Is the thermal pad electrically isolated or connected to a specific terminal?
The exposed thermal pad on the DMN1008UFDFQ-7 is electrically connected to the drain terminal, as confirmed by the internal schematic and package drawing. It must be soldered to a PCB drain-copper pour and cannot be left floating or grounded independently.
Does this MOSFET require a gate resistor for safe operation in a 500 kHz buck converter?
Yes-a gate resistor (typically 2–10 Ω) is required to dampen ringing caused by gate-drain capacitance (Crss = 270 pF) and PCB trace inductance. The datasheet specifies tD(OFF) and tF test conditions using RG = 2 Ω, confirming its necessity for reliable high-frequency switching.
Can the DMN1008UFDFQ-7 replace a P-channel MOSFET in high-side load switch applications?
No-it is an N-channel device and requires gate drive above the source potential for full enhancement. In high-side configurations, it must be used with a charge pump or bootstrap circuit; a P-channel part like DMG1026UVQ would simplify gate drive but sacrifice RDS(ON) and speed.
DMN1008UFDFQ-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 12 V
- Current - Continuous Drain (Id) @ 25°C:
- 12.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 8mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 23.4 nC @ 8 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 995 pF @ 6 V
- FET Feature:
- -
- Power Dissipation (Max):
- 700mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type F)
DMN1008UFDFQ-7 FAQ
1.How can I place an order for DMN1008UFDFQ-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN1008UFDFQ-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN1008UFDFQ-7 reliable?
The price and inventory of DMN1008UFDFQ-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN1008UFDFQ-7 is usually 5 days.
3.What payment methods are accepted for DMN1008UFDFQ-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN1008UFDFQ-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN1008UFDFQ-7?
DMN1008UFDFQ-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN1008UFDFQ-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN1008UFDFQ-7?
For technical support, including DMN1008UFDFQ-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN1008UFDFQ-7 requirements.
6.How does Aetrix verify that DMN1008UFDFQ-7 is sourced from the original manufacturer or authorized distributors?
All DMN1008UFDFQ-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN1008UFDFQ-7 meets industry standards.
7.What is the process for return or replacement of DMN1008UFDFQ-7?
All DMN1008UFDFQ-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN1008UFDFQ-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN1008UFDFQ-7 part is unused and in its original packaging.
Return procedure for DMN1008UFDFQ-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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