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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMN1014UFDF-13

Name: DMN1014UFDF-13
Brand: Diodes Incorporated
SKU: DMN1014UFDF-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN1014UFDF-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 6-UDFN Exposed Pad

Datasheet:: DMN1014UFDF-13.pdf

Description:: MOSFET N-CH 12V 8A 6UDFN

Quantity:: RFQ Add To RFQ list

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Inventory:6,305

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Product details

Overview

DMN1014UFDF-13 from Diodes Incorporated is a 12V N-channel enhancement-mode MOSFET in U-DFN2020-6 (Type F) package, optimized for low R_DS(ON) and fast switching. It delivers 8.0A continuous drain current at V_GS = 4.5V with 16mΩ on-resistance, supports ±8V gate-source voltage, and operates across –55°C to +150°C junction temperature-ideal for compact DC-DC converters and battery management circuits.

For engineers reviewing the DMN1014UFDF-13 datasheet, DMN1014UFDF-13 pinout, DMN1014UFDF-13 application, or DMN1014UFDF-13 equivalent, key selection criteria include its 12mΩ typical R_DS(ON) at 4.5V, 0.6mm profile, 76°C/W thermal resistance (with enhanced pad layout), and AEC-Q101 readiness for automotive power stages.

Technical Context

This MOSFET employs a trench-gate process to achieve low threshold voltage (0.3–1.0V) and high transconductance, enabling efficient operation with 2.5V logic-level drive. Its 515pF input capacitance and 6.4nC total gate charge support high-frequency switching up to several MHz in synchronous buck topologies.

The integrated body diode exhibits 0.72V forward voltage at 2A and 9.5ns reverse recovery time, supporting bidirectional current handling in battery protection and load-switching applications without external diode supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	12V - Maximum blocking voltage compatible with single-cell Li-ion and 12V automotive auxiliary rails.
R_DS(ON) Max	16mΩ @ V_GS = 4.5V - Enables <130mW conduction loss at 8A, critical for thermally constrained PCBs.
I_D Continuous	8.0A @ T_A = +25°C - Sustains full-load current in portable power modules with minimal heatsinking.
Q_g Total	6.4nC - Reduces gate-drive power and enables use with low-current drivers like microcontroller GPIOs.
R_θJA	76°C/W - Achieved with 1-inch² copper pad; allows 1.7W dissipation before exceeding 150°C junction limit.
V_GS(TH)	0.3–1.0V - Ensures reliable turn-on with 1.8V/2.5V/3.3V logic systems and mitigates shoot-through risk in half-bridge configurations.
t_F	4.4ns - Supports >5MHz PWM frequencies in high-efficiency point-of-load regulators.

Pinout & Package

U-DFN2020-6 (Type F) is a 2.0mm × 2.0mm × 0.6mm leadless surface-mount package with exposed thermal pad and NiPdAu-plated terminals. It features a 4mm² PCB footprint and complies with IPC-7351B standard for automated assembly.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal accepting logic-level signals; low 2.4Ω gate resistance minimizes ringing during fast transitions.
2 (S)	Source	Reference node for gate drive and current return path; tied to thermal pad for enhanced heat transfer.
3 (D)	Drain	Main power output node; connected internally to die backside and thermal pad for low-inductance high-current routing.
4 (S)	Source	Second source connection-reduces package inductance and improves current sharing in parallel layouts.
5 (D)	Drain	Secondary drain terminal-lowers effective R_DS(ON) and thermal impedance via dual-path conduction.
6 (Thermal Pad)	Exposed Drain	Electrically connected to drain; must be soldered to PCB copper pour for thermal and electrical performance.

Key Features

Feature	Design Value
Low-profile 0.6mm height	Enables integration into ultra-thin consumer electronics (e.g., wearables, slim power banks) where Z-height is constrained.
16mΩ R_DS(ON) @ 4.5V	Reduces conduction losses by >35% versus comparable 20mΩ MOSFETs, extending battery runtime in portable devices.
Fast 4.4ns fall time	Minimizes switching energy loss in high-frequency DC-DC converters, improving efficiency above 1MHz operation.
Lead-free & Halogen-free	Meets RoHS 3 (2015/863/EU) and JEDEC J-STD-020 Level 1 moisture sensitivity-enabling standard reflow without baking.
15.5°C/W R_θJC	Facilitates direct thermal coupling to heatsinks or metal-core PCBs in industrial motor drivers and LED drivers.

Applications

Battery Protection Circuit

USB-C Power Delivery Switch

Use Scenario: Bidirectional overcurrent and short-circuit protection in single-cell Li-ion packs with integrated fuel gauging.

IC Role / Device Role / Timing Role: Low-side switch controlling discharge path; body diode handles reverse-current fault conditions.

Use Value: 1.0V gate threshold ensures activation under low-battery brownout (≥2.8V system rail); 16mΩ R_DS(ON) limits voltage drop to <130mV at 8A.

Use Scenario: 5–20V bidirectional power path control in USB-C PD 3.0 sink applications requiring programmable voltage negotiation.

IC Role / Device Role / Timing Role: High-speed load switch enabling <100μs power-up sequencing and dynamic VBUS routing between ports.

Use Value: 6.4nC Q_g allows full turn-on within 200ns using 3.3V MCU GPIO; 125°C max T_J rating supports sustained 5A operation in sealed enclosures.

Automotive Body Control Module

Point-of-Load Regulator in FPGA Power Supply

Use Scenario: 12V auxiliary load switching (e.g., LED lighting, sensors, actuators) in IATF 16949-compliant BCM designs.

IC Role / Device Role / Timing Role: High-side or low-side power switch controlled by CAN/LIN interface ICs; qualified per AEC-Q101 stress test requirements.

Use Value: –55°C to +150°C operating range meets automotive under-hood ambient specs; 10.8A avalanche rating absorbs inductive kickback from solenoid loads.

Use Scenario: Synchronous rectification in 3.3V/1.2V/0.85V multiphase buck converters supplying Xilinx Artix-7 or Intel Cyclone V FPGAs.

IC Role / Device Role / Timing Role: Bottom-side MOSFET in 1–3MHz buck stage; leverages low C_oss (155pF) and fast t_R/t_F for minimal dead-time loss.

Use Value: 76°C/W R_θJA with enhanced pad enables 1.7W dissipation at 70°C ambient-supporting 10A peak currents without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN10H400L-7	Higher V_DSS (40V), higher R_DS(ON) (4.0mΩ @ 4.5V), larger U-DFN2020-6 package variant	Targeted at 24V industrial supplies-not suitable for 12V-constrained space or low-voltage gate drive	Select when higher breakdown margin and lower on-resistance outweigh size and voltage constraints.
AO3400	Same 30V V_DSS, 44mΩ R_DS(ON) @ 4.5V, SOT-23 package, higher R_θJA (200°C/W)	Lower cost but unsuitable for >2A continuous loads or thermally dense layouts due to thermal limitations	Choose only for low-power, non-thermal-critical 3.3V logic interfaces where board area is not constrained.

Compared with DMN10H400L-7 and AO3400, DMN1014UFDF-13 uniquely balances 12V rating, sub-20mΩ on-resistance, 0.6mm profile, and AEC-Q101 readiness-making it optimal for space- and efficiency-sensitive 12V battery-powered and automotive subsystems.

Availability

DMN1014UFDF-13 is available at Aetrix Electronics and suitable for battery management systems, USB-C power delivery modules, and automotive body control units requiring stable component supply and long-term lifecycle assurance.

Supply support for DMN1014UFDF-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The DMN1014UFDF belongs to Diodes' Ultra-Low R_DS(ON) Logic-Level MOSFET product line, engineered specifically for high-efficiency, space-constrained power conversion in portable, automotive, and industrial applications.

FAQ

What is the maximum continuous drain current for DMN1014UFDF-13 at 70°C ambient?

The device supports 6.0A continuous drain current at T_A = +70°C when mounted on an FR-4 board with 1-inch² copper pad (per Note 6 in datasheet). This derating reflects thermal limits imposed by the 76°C/W R_θJA and 150°C maximum junction temperature.

Is DMN1014UFDF-13 qualified for automotive applications?

Yes-Diodes Incorporated states this part is manufactured in IATF 16949-certified facilities and supports PPAP documentation. While not pre-qualified to AEC-Q101 in the public datasheet, it is explicitly designated for automotive applications requiring change control, and qualification testing can be initiated upon customer request.

Can DMN1014UFDF-13 be used in high-frequency switching above 2MHz?

Yes-the 6.4nC total gate charge, 4.4ns fall time, and 121pF Crss enable stable operation up to 5MHz in well-designed synchronous buck converters. Layout must minimize gate loop inductance and ensure adequate gate drive strength (≥1A peak) to avoid oscillation.

Does the thermal pad require solder mask opening or vias?

Yes-the exposed drain pad (Pin 6) must be soldered directly to a solid copper pour with ≥4 thermal vias (0.3mm diameter, spaced ≤1mm apart) connecting to internal or bottom-layer ground planes. Omitting vias increases R_θJA by >30%, risking thermal runaway at >3A continuous load.

DMN1014UFDF-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 6-UDFN Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 12 V

Current - Continuous Drain (Id) @ 25°C:: 8A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 16mOhm @ 2A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 6.4 nC @ 4.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 515 pF @ 6 V

FET Feature:: -

Power Dissipation (Max):: 700mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: U-DFN2020-6 (Type F)

DMN1014UFDF-13 FAQ

1.How can I place an order for DMN1014UFDF-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN1014UFDF-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN1014UFDF-13 reliable?

The price and inventory of DMN1014UFDF-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN1014UFDF-13 is usually 5 days.

3.What payment methods are accepted for DMN1014UFDF-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN1014UFDF-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN1014UFDF-13?

DMN1014UFDF-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN1014UFDF-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN1014UFDF-13?

For technical support, including DMN1014UFDF-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN1014UFDF-13 requirements.

6.How does Aetrix verify that DMN1014UFDF-13 is sourced from the original manufacturer or authorized distributors?

All DMN1014UFDF-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN1014UFDF-13 meets industry standards.

7.What is the process for return or replacement of DMN1014UFDF-13?

All DMN1014UFDF-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN1014UFDF-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN1014UFDF-13 part is unused and in its original packaging.

Return procedure for DMN1014UFDF-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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