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Diodes Incorporated DMN1014UFDF-7
- Part No.:
- DMN1014UFDF-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DMN1014UFDF-7.pdf
- Description:
- MOSFET N-CH 12V 8A 6UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:8,348
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Product details
Overview
DMN1014UFDF-7 from Diodes Incorporated is a 12V N-channel enhancement-mode MOSFET in U-DFN2020-6 (Type F) package, optimized for low RDS(ON) (12 mΩ typ @ VGS = 4.5V), fast switching (tF = 4.4 ns), and low gate threshold (VGS(TH) = 0.3–1.0 V), enabling high-efficiency power management in space-constrained battery-powered systems.
For engineers reviewing the DMN1014UFDF-7 datasheet, DMN1014UFDF-7 pinout, DMN1014UFDF-7 application, or DMN1014UFDF-7 equivalent, this device is selected for compact DC-DC converter topologies requiring sub-1V gate drive compatibility, thermal performance under 76°C/W RθJA (with copper pad), and AEC-Q200-readiness via IATF 16949 manufacturing.
Technical Context
This MOSFET employs a trench-gate silicon process to achieve low on-resistance while maintaining robust switching characteristics: Qg = 6.4 nC at VGS = 4.5V and Ciss = 515 pF at VDS = 6V support efficient gate driving in synchronous buck stages. Its 0.6 mm profile and 4 mm² footprint are engineered for ultra-thin portable electronics.
The device integrates a body diode with VSD = 0.72 V (typ) at IS = 2A and tRR = 9.5 ns, enabling reliable freewheeling in high-frequency converters. Thermal design is supported by RθJC = 15.5°C/W and operation across –55°C to +150°C junction temperature range.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 12 V - Maximum drain-source blocking voltage for 3.3V/5V logic-level systems. |
| RDS(ON) | 12 mΩ (typ) @ VGS = 4.5V - Enables ≤100 mW conduction loss at 2.9 A continuous current. |
| ID (max) | 8.0 A @ TA = +25°C - Supports high-current load switches in battery protection circuits. |
| Qg | 6.4 nC - Low gate charge reduces driver power and enables >1 MHz switching in point-of-load regulators. |
| tF | 4.4 ns - Fast fall time minimizes switching transition losses in synchronous rectification. |
| RθJA | 76°C/W - Achieved with 1-inch² copper pad; allows 1.0 W dissipation at TA = +70°C. |
| VGS(TH) | 0.3–1.0 V - Ensures turn-on with single-cell Li-ion (2.5–4.2 V) or 3.3V MCU GPIOs. |
Pinout & Package
Package: U-DFN2020-6 (Type F), 2.0 × 2.0 × 0.6 mm, bottom-exposed thermal pad, NiPdAu-plated terminals, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; accepts 0.3–1.0 V threshold; requires <6.4 nC charge for full enhancement. |
| 2 (S) | Source | Reference node for gate drive; connects to power ground or low-side switch return path. |
| 3 (D) | Drain | High-side output node; rated for 12 V blocking and 40 A pulsed current (380 µs). |
| 4 (S) | Source (redundant) | Second source terminal; paralleled internally to reduce package inductance and improve current sharing. |
| 5 (D) | Drain (redundant) | Second drain terminal; lowers RDS(ON) contribution from bond wire resistance. |
| 6 (EP) | Exposed Pad | Thermal and electrical connection to PCB ground plane; mandatory for achieving RθJA = 76°C/W. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low profile (0.6 mm height) | Enables integration into <1.0 mm Z-height modules such as wearable battery packs and hearing aids. |
| 4 mm² PCB footprint | Reduces board area by >50% vs. SO-8 or TSOP-6 packages, critical for multi-MOSFET PMIC layouts. |
| Low VGS(TH) with tight distribution | Ensures consistent turn-on across temperature (±0.1 V variation from –55°C to +150°C) without external bias. |
| Fast switching with low Qgd/Qgs ratio | Qgd = 1.9 nC / Qgs = 0.3 nC supports clean Miller plateau control in hard-switched converters. |
| Halogen- and antimony-free "Green" construction | Meets IPC-1752A Class 3 reporting requirements and automotive OEM material declarations (e.g., GM GPDS, Ford WERS). |
Applications
| Battery Protection Circuit | USB-C Power Delivery Switch |
|---|---|
|
Use Scenario: Bidirectional overvoltage/overcurrent protection in single-cell Li-ion battery packs for IoT sensors. IC Role / Device Role / Timing Role: Low-side N-channel switch controlling charge/discharge path with integrated reverse-blocking capability. Use Value: 12 mΩ RDS(ON) limits voltage drop to <30 mV at 2.5 A, preserving battery runtime and enabling accurate coulomb counting. |
Use Scenario: 5–20 V input path selection in USB-C PD sink applications with dual-role port negotiation. IC Role / Device Role / Timing Role: High-speed power switch enabling <10 µs fault response during VBUS short-circuit events. Use Value: 4.4 ns fall time and 40 A pulsed rating allow immediate current shutoff before eFuse trip thresholds are exceeded. |
| Compact DC-DC Synchronous Buck Converter | Low-Power Load Switch for Wearables |
|
Use Scenario: 1.8 V output stage in PMIC for Bluetooth LE SoCs operating from 3.6 V nominal battery supply. IC Role / Device Role / Timing Role: High-side synchronous rectifier driven by integrated controller with 4.5 V gate bias. Use Value: 6.4 nC Qg and 515 pF Ciss enable >2 MHz operation with <15% gate drive loss at 1 A load. |
Use Scenario: Always-on rail isolation in smart earbuds, disconnecting charging IC when main battery is depleted. IC Role / Device Role / Timing Role: Logic-level controlled load switch activated by 3.3 V microcontroller GPIO. Use Value: 0.3 V minimum VGS(TH) guarantees turn-on even at end-of-discharge (2.8 V battery), preventing brownout lockup. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2004LK3-7 | RDS(ON) = 20 mΩ @ VGS = 2.5V; larger U-DFN2020-6 (Type K) package; higher Qg = 9.5 nC | Higher conduction loss at light loads; less suitable for <3.3 V gate drive | Select when higher avalanche energy (EAS = 12 mJ) is required for inductive load snubbing. |
| AO3414 | RDS(ON) = 21 mΩ @ VGS = 2.5V; SOT-23 package; RθJA = 200°C/W (no thermal pad) | Lower power density; unsuitable for >500 mW continuous dissipation | Select only for prototyping or ultra-low-cost consumer devices where thermal derating is acceptable. |
Compared with DMN2004LK3-7 and AO3414, DMN1014UFDF-7 delivers superior power density (12 mΩ in 0.6 mm height), lower gate drive demand (6.4 nC), and verified thermal performance (76°C/W with copper pad), making it optimal for production-grade space- and efficiency-constrained designs.
Availability
DMN1014UFDF-7 is available at Aetrix Electronics and suitable for battery management systems, USB-C power delivery modules, and compact DC-DC converters requiring stable component supply, long-term lifecycle assurance, and traceable green-material compliance.
Supply support for DMN1014UFDF-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in IATF 16949-certified facilities.
This device belongs to Diodes' Ultra-Low RDS(ON) Logic-Level MOSFET product line, designed specifically for high-efficiency, space-constrained power conversion in portable and battery-powered electronics.
FAQ
What is the maximum continuous drain current at 70°C ambient?
The DMN1014UFDF-7 supports 6.0 A continuous drain current at TA = +70°C when mounted on an FR-4 board with a 1-inch² copper pad (PD = 1.0 W, RθJA = 76°C/W). This rating assumes no additional airflow or heatsinking and accounts for thermal derating above 25°C ambient.
Is the exposed pad electrically connected to the source terminal?
Yes, the exposed pad (Pin 6) is internally connected to the source terminals (Pins 2 and 4). It must be soldered to a PCB ground plane or source net to achieve specified thermal resistance and ensure mechanical reliability per J-STD-020 Level 1 moisture sensitivity handling.
Can this MOSFET be used in automotive applications?
While not AEC-Q101 qualified out-of-box, the DMN1014UFDF-7 is manufactured in IATF 16949-certified facilities and supports PPAP documentation upon request. Diodes Incorporated offers AEC-Q200-compliant variants (e.g., DMN1014UFDFQ-7) for automotive battery management and infotainment power rails.
What is the recommended gate resistor value for 1 MHz switching?
A 2 Ω gate resistor is validated in the datasheet for 1 MHz operation (tD(ON) = 3.0 ns, tF = 4.4 ns). For higher EMI immunity, a 4.7 Ω resistor may be used-this increases tF to ~8 ns but maintains <5% efficiency penalty at 2 A load in buck converters.
DMN1014UFDF-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 12 V
- Current - Continuous Drain (Id) @ 25°C:
- 8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 16mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 6.4 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 515 pF @ 6 V
- FET Feature:
- -
- Power Dissipation (Max):
- 700mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type F)
DMN1014UFDF-7 FAQ
1.How can I place an order for DMN1014UFDF-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN1014UFDF-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN1014UFDF-7 reliable?
The price and inventory of DMN1014UFDF-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN1014UFDF-7 is usually 5 days.
3.What payment methods are accepted for DMN1014UFDF-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN1014UFDF-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN1014UFDF-7?
DMN1014UFDF-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN1014UFDF-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN1014UFDF-7?
For technical support, including DMN1014UFDF-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN1014UFDF-7 requirements.
6.How does Aetrix verify that DMN1014UFDF-7 is sourced from the original manufacturer or authorized distributors?
All DMN1014UFDF-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN1014UFDF-7 meets industry standards.
7.What is the process for return or replacement of DMN1014UFDF-7?
All DMN1014UFDF-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN1014UFDF-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN1014UFDF-7 part is unused and in its original packaging.
Return procedure for DMN1014UFDF-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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