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Diodes Incorporated DMN1017UCP3-7
- Part No.:
- DMN1017UCP3-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 3-XDFN
- Datasheet:
-
DMN1017UCP3-7.pdf
- Description:
- MOSFET N-CH 12V 7.5A X3DSN1010-3
- Quantity:
- Payment:
- Shipping:
Inventory:2,513
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Product details
Overview
DMN1017UCP3 from Diodes Incorporated is an N-channel enhancement-mode MOSFET in a Chip-Scale Package (CSP), designed for high-efficiency power switching in space-constrained DC-DC converters and battery management systems. It delivers 14.1 mΩ RDS(ON) at VGS = 3.3 V, 7.5 A continuous drain current, and ultra-low 0.29 mm height - enabling compact, thermally efficient load switch implementations.
For engineers reviewing the DMN1017UCP3 datasheet, DMN1017UCP3 pinout, DMN1017UCP3 application, or DMN1017UCP3 equivalent, key selection criteria include its 12 V VDSS, 10.5 nC total gate charge, CSP footprint (1.0 mm × 1.0 mm), thermal resistance of 85 °C/W on enhanced PCB layout, and body diode forward voltage of 0.7 V at 1.0 A.
Technical Context
This MOSFET employs TR-MOS technology optimized for low-voltage, high-current switching with fast turn-on (3.7 ns delay) and turn-off (17.9 ns delay) times. Its gate threshold voltage (0.4–1.0 V) enables robust operation with 3.3 V logic-level drive, while the integrated source-drain diode supports synchronous rectification and reverse current protection.
The X3-DSN1010-3 package uses copper pillar interconnects and matte tin annealed terminations to minimize thermal impedance and ensure reliable solder joint integrity. Electrical performance is characterized across –55 °C to +150 °C junction temperature, with RDS(ON) variation tightly controlled up to 150 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 12 V - Maximum blocking voltage for 3.3 V–5 V input rail applications |
| RDS(ON) @ VGS = 3.3 V | 14.1 mΩ typical - Enables <100 mW conduction loss at 7.5 A |
| Qg | 10.5 nC - Low gate charge reduces driver power and switching losses |
| ID (continuous) | 7.5 A @ TA = 25 °C with 1-inch² copper - Supports high-density power stages |
| RθJA | 85 °C/W - Achieved with enhanced FR-4 layout; critical for thermal margin in sealed enclosures |
| VGS(TH) | 0.7 V typical - Ensures strong enhancement-mode behavior and noise immunity at low drive voltages |
| Body diode VSD | 0.7 V @ IS = 1.0 A - Low forward drop improves efficiency in bidirectional current paths |
Pinout & Package
Package: X3-DSN1010-3 - 1.0 mm × 1.0 mm chip-scale package with 0.29 mm profile and copper pillar terminations. Moisture sensitivity level 1 per J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal (S) | Primary current return path; electrically and thermally connected to large PCB copper area |
| Pin 2 (Gate) | Gate terminal (G) | Low-capacitance control node; requires <4.4 Ω gate resistance for optimal switching |
| Pin 3 (Drain) | Drain terminal (D) | Main power output node; connects to switched rail or inductor node in buck topology |
Key Features
| Feature | Design Value |
|---|---|
| TR-MOS low-RDS(ON) architecture | 14.1 mΩ @ 3.3 V drive - Reduces conduction loss by >30% vs. comparable 12 V MOSFETs in same footprint |
| Chip-Scale Package (CSP) | 1.0 mm × 1.0 mm × 0.29 mm - Maximizes power density without thermal vias or external heatsinking |
| Lead-free & halogen-free construction | SnAg solder cap, matte tin over copper pillar - Compliant with RoHS 3 and automotive green standards |
| Ultra-fast switching | tD(ON) = 3.7 ns, tD(OFF) = 17.9 ns - Minimizes dead-time losses in high-frequency (>1 MHz) DC-DC designs |
| Robust thermal performance | RθJA = 85 °C/W with 1-inch² copper - Enables 1.47 W dissipation in compact layouts without derating |
Applications
| Battery Protection Circuit | USB-C Power Delivery Switch |
|---|---|
|
Use Scenario: Bidirectional current control in portable device battery packs with overcurrent and short-circuit protection. IC Role / Device Role: Load switch controlling charge/discharge path between battery and system bus. Use Value: 14.1 mΩ RDS(ON) limits voltage drop to <105 mV at 7.5 A, preserving battery runtime and thermal headroom. |
Use Scenario: USB-C port power path management supporting 3 A/5 V and 3 A/9 V profiles. IC Role / Device Role: High-side power switch enabling hot-plug detection and fault isolation. Use Value: 0.29 mm height allows placement under USB-C connector; 10.5 nC Qg ensures clean 200 kHz–1 MHz switching with minimal gate drive overhead. |
| Point-of-Load Buck Converter | Wireless Charging Transmitter |
|
Use Scenario: High-frequency synchronous rectifier in 12 V → 3.3 V/5 V buck regulators for FPGA or SoC power rails. IC Role / Device Role: Low-side switch in synchronous buck topology with integrated body diode recovery. Use Value: 2.7 nC QRR and 14.2 ns tRR reduce reverse recovery loss and EMI during light-load discontinuous conduction mode. |
Use Scenario: Half-bridge switching element in 100–200 kHz resonant inverter for Qi-compliant wireless charging pads. IC Role / Device Role: Fast-switching power transistor handling pulsed 15 A peak currents. Use Value: 15 A pulsed drain rating and 150 °C max junction temperature support intermittent high-power bursts without thermal shutdown. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN10H170LPS-7 | Higher RDS(ON) (17.0 mΩ @ 4.5 V), larger DFN2020 package (2.0 mm × 2.0 mm) | Less suitable for ultra-compact layouts; better suited for higher-current, lower-frequency designs | Select when board space permits larger footprint and gate drive exceeds 4.5 V |
| AOCA34122 | Same 1.0 mm × 1.0 mm CSP, but higher Qg (13.5 nC) and RDS(ON) (16.5 mΩ @ 3.3 V) | Marginally lower efficiency in high-frequency, low-duty-cycle applications | Consider only if second-source qualification requires Alpha & Omega supply chain alignment |
Compared with DMN1017UCP3, DMN10H170LPS-7 trades footprint size for higher current capability and relaxed thermal design, while AOCA34122 offers identical packaging but with measurable penalties in switching loss and conduction loss - making DMN1017UCP3 optimal for 3.3 V-driven, space-constrained, high-efficiency loads.
Availability
DMN1017UCP3 is available at Aetrix Electronics and suitable for DC-DC converters, battery management systems, and USB-C load switching requiring stable component supply and long-term lifecycle assurance.
Supply support for DMN1017UCP3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-performance power management, signal integrity, and protection solutions for industrial, computing, and consumer markets.
This device belongs to Diodes' TR-MOS family - engineered specifically for low-voltage, high-efficiency power switching in portable and space-constrained applications where thermal density and gate drive simplicity are critical.
FAQ
What is the maximum safe operating junction temperature for DMN1017UCP3?
The absolute maximum junction temperature is +150 °C, and the device is fully characterized across –55 °C to +150 °C. Thermal resistance drops to 85 °C/W with a 1-inch² copper pad, allowing 1.47 W continuous dissipation at ambient - verified via JEDEC-standard FR-4 test board conditions.
Can DMN1017UCP3 be used with 1.8 V gate drive?
Yes - RDS(ON) remains 21.3 mΩ (max) at VGS = 1.8 V and TJ = +125 °C, supporting logic-level operation in ultra-low-power microcontroller interfaces. Gate threshold voltage is guaranteed 0.4–1.0 V, ensuring reliable turn-on even with marginal drive margins.
Is DMN1017UCP3 qualified for automotive applications?
No - it is not AEC-Q101 qualified. While manufactured in IATF 16949-certified facilities, this part lacks automotive change control, PPAP documentation, and extended reliability testing. For automotive use, contact Diodes directly for qualified alternatives like the DMP10H170S.
What is the recommended PCB pad layout for optimal thermal performance?
Diodes specifies a minimum 1-inch² copper area connected to the source pad via multiple thermal vias. The exact layout is defined in Package Outline X3-DSN1010-3 on diodes.com/package-outlines.html - including 0.96 mm × 0.96 mm solder mask opening and 0.505 mm pitch between copper pillars.
DMN1017UCP3-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 3-XDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 12 V
- Current - Continuous Drain (Id) @ 25°C:
- 7.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 3.3V
- Rds On (Max) @ Id, Vgs:
- 17mOhm @ 5A, 3.3V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 16 nC @ 3.3 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1503 pF @ 6 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.47W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- X3-DSN1010-3
DMN1017UCP3-7 FAQ
1.How can I place an order for DMN1017UCP3-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN1017UCP3-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN1017UCP3-7 reliable?
The price and inventory of DMN1017UCP3-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN1017UCP3-7 is usually 5 days.
3.What payment methods are accepted for DMN1017UCP3-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN1017UCP3-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN1017UCP3-7?
DMN1017UCP3-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN1017UCP3-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN1017UCP3-7?
For technical support, including DMN1017UCP3-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN1017UCP3-7 requirements.
6.How does Aetrix verify that DMN1017UCP3-7 is sourced from the original manufacturer or authorized distributors?
All DMN1017UCP3-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN1017UCP3-7 meets industry standards.
7.What is the process for return or replacement of DMN1017UCP3-7?
All DMN1017UCP3-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN1017UCP3-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN1017UCP3-7 part is unused and in its original packaging.
Return procedure for DMN1017UCP3-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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