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Diodes Incorporated DMN1019USNQ-13
- Part No.:
- DMN1019USNQ-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
DMN1019USNQ-13.pdf
- Description:
- MOSFET BVDSS: 8V~24V SC59 T&R 10
- Quantity:
- Payment:
- Shipping:
Inventory:6,318
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Product details
Overview
DMN1019USNQ-13 from Diodes Incorporated is an AEC-Q101-qualified 12V N-channel enhancement-mode MOSFET in SC59 package, featuring 10 mΩ RDS(ON) at VGS = 4.5V, 9.3A continuous drain current at +25°C, and ESD-protected gate. It serves as a high-efficiency load switch or synchronous rectifier in automotive power management circuits.
For engineers reviewing the DMN1019USNQ-13 datasheet, DMN1019USNQ-13 pinout, DMN1019USNQ-13 application, or DMN1019USNQ-13 equivalent, this page delivers verified electrical specs, thermal behavior under pulsed operation, gate charge profile, junction-to-ambient thermal resistance (96 °C/W on 1"×1" 2 oz Cu), and AEC-Q101 qualification evidence for automotive-grade reliability assessment.
Technical Context
This MOSFET employs planar trench-gate technology optimized for low RDS(ON) at low gate drive voltages (1.2–4.5V), enabling compatibility with 1.8V/2.5V/3.3V logic-level microcontrollers in space-constrained automotive modules. Its body diode exhibits 0.8–1.2V forward voltage at 10A, supporting bidirectional current handling in DC-DC buck converters.
The device integrates gate protection diodes to withstand ±2 µA gate leakage up to ±8V VGS, and its transient thermal impedance curve (RθJA(t)) supports safe single-pulse operation up to 70A for 10µs at 1% duty cycle - critical for overcurrent fault response in battery protection ICs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 12 V - Maximum drain-source blocking voltage; suitable for 12V automotive battery rail switching without derating. |
| RDS(ON) | 10 mΩ @ VGS = 4.5V - Enables ≤93 mW conduction loss at 9.3A, reducing thermal stress in compact PCB layouts. |
| ID (continuous) | 9.3 A @ TA = +25°C - Supports sustained load-switching in infotainment power rails or ADAS camera modules. |
| Qg | 27.3 nC @ VGS = 4.5V - Determines gate driver sizing; enables fast turn-on (<58 ns rise time) with low-power drivers. |
| RθJA | 96 °C/W - Measured on 1"×1" FR-4 with 2 oz copper; defines thermal margin for ambient temperatures up to +70°C. |
| VGS(TH) | 0.35–0.8 V - Ultra-low threshold ensures reliable turn-on even with weak gate drive or degraded supply conditions. |
| Ciss | 2426 pF - Input capacitance impacts gate drive energy and switching frequency limits in high-frequency DC-DC stages. |
Pinout & Package
SC59 package: 3-pin surface-mount plastic case (UL 94V-0), 0.014 g weight, matte tin-plated terminals. Dimensions: 2.8 mm × 1.6 mm × 1.1 mm (L × W × H), with 0.95 mm lead pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Source) | Current return path / body diode cathode | Connected to ground or low-side reference; thermally coupled to PCB copper for heat dissipation. |
| 2 (Gate) | Control terminal for channel conduction | ESD-protected input requiring <2 µA leakage control; driven by logic-level MCU GPIO or dedicated gate driver. |
| 3 (Drain) | High-side current output / body diode anode | Connects to 12V rail or inductive load; handles pulsed currents up to 70A with SOA-limited pulse width. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive temperature range (−55°C to +150°C) and PPAP submission readiness per IATF 16949 manufacturing. |
| Low-voltage gate drive | Guaranteed RDS(ON) ≤14 mΩ at VGS = 1.8V - eliminates need for level shifters in 1.8V system-on-chip interfaces. |
| ESD-protected gate | Withstands human-body-model ESD events ≥2 kV - reduces external TVS requirements in cost-sensitive automotive modules. |
| Green packaging | Halogen- and antimony-free (<900 ppm Br/Cl, <1000 ppm Sb); compliant with RoHS 3 and automotive ELV directives. |
Applications
| Automotive Load Switch | DC-DC Synchronous Rectifier |
|---|---|
|
Use Scenario: Power gating of rearview camera module during vehicle ignition-off to prevent battery drain. IC Role / Device Role / Timing Role: Low-side switch controlling 12V supply path; activated within 100 ms of ignition signal assertion. Use Value: 10 mΩ RDS(ON) limits voltage drop to <93 mV at 9.3A, preserving camera startup voltage margin while minimizing self-heating. |
Use Scenario: Secondary-side rectification in 12V-to-5V buck converter for ADAS domain controller. IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode; driven complementary to high-side FET with 50 ns dead-time. Use Value: 27.3 nC Qg enables efficient 500 kHz switching with <1.4 mW gate drive loss, improving converter efficiency by ≥3% vs. diode solution. |
| USB-C Power Delivery Switch | Body Control Module Power Distribution |
|
Use Scenario: Overcurrent-protected 5V/3A USB-C port in center console, supporting programmable power supply negotiation. IC Role / Device Role / Timing Role: High-side load switch with integrated current sensing feedback path to PD controller. Use Value: 0.35–0.8 V VGS(TH) allows precise current limiting via gate voltage modulation, enabling dynamic 1.5A/3A output configuration. |
Use Scenario: Distributed 12V power routing to door lock actuators, window lift motors, and mirror heaters. IC Role / Device Role / Timing Role: Individual channel switch with diagnostic reporting; responds to LIN bus commands with <5 ms latency. Use Value: 70A pulsed rating supports motor inrush currents without SOA violation, eliminating need for external fuses per channel. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2004LKQ-7 | RDS(ON) = 19 mΩ @ VGS = 4.5V; higher threshold (0.5–1.2 V); same SC59 package. | Lower current capability (6.5A) suits lower-power body electronics but lacks margin for motor loads. | Select when thermal budget permits higher conduction loss and gate drive is stable >4.5V. |
| DMN3022LSD-13 | 30V VDSS; RDS(ON) = 22 mΩ @ VGS = 4.5V; SO-8 package (larger footprint, better thermal performance). | Higher voltage rating enables use in 24V commercial truck systems but requires PCB redesign. | Choose for 24V platforms or where 96 °C/W RθJA is insufficient and board area allows SO-8. |
Compared with DMN2004LKQ-7 and DMN3022LSD-13, the DMN1019USNQ-13 uniquely balances ultra-low RDS(ON) at 1.8V drive, AEC-Q101 compliance, and SC59 footprint - making it optimal for space-constrained 12V automotive modules needing <100 mΩ on-resistance without gate boosting.
Availability
DMN1019USNQ-13 is available at Aetrix Electronics and suitable for automotive load switching, DC-DC converter synchronous rectification, and body control module power distribution requiring stable component supply across production lifecycles.
Supply support for DMN1019USNQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in IATF 16949-certified facilities.
The DMN1019USNQ belongs to Diodes' AEC-Q101-qualified logic-level MOSFET product line, engineered specifically for automotive power management functions where low gate drive voltage, high reliability, and compact packaging are mandatory.
FAQ
What is the maximum pulsed drain current rating for DMN1019USNQ-13?
The device supports 70A pulsed drain current with 10µs pulse width and 1% duty cycle, validated per SOA curves in the datasheet. This rating assumes TJ ≤ 150°C and proper PCB thermal design using 1"×1" 2 oz copper. Exceeding these conditions risks thermal runaway or bond-wire failure.
Is DMN1019USNQ-13 compatible with 1.8V microcontroller GPIOs?
Yes - its VGS(TH) range (0.35–0.8V) and guaranteed RDS(ON) of 14 mΩ at VGS = 1.8V ensure full enhancement with 1.8V logic outputs. No level shifter is required, simplifying interface design in modern low-voltage automotive ECUs.
Does DMN1019USNQ-13 require external gate resistors for EMI control?
A 1–10 Ω series gate resistor is recommended to dampen ringing caused by 2426 pF Ciss and PCB trace inductance. The datasheet's tR = 57.6 ns and tF = 16.8 ns were measured with RG = 1 Ω; increasing RG slows switching but reduces EMI emissions in sensitive RF zones.
How does the body diode performance impact reverse-current applications?
The body diode has VSD = 0.8–1.2 V at 10A and TA = 25°C, with forward voltage rising to ~1.4 V at 150°C. In reverse-current paths (e.g., back-powering prevention), this diode conducts with minimal voltage penalty but requires thermal derating above 85°C ambient.
DMN1019USNQ-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 12 V
- Current - Continuous Drain (Id) @ 25°C:
- 9.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.2V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 10mOhm @ 9.7A, 4.5V
- Vgs(th) (Max) @ Id:
- 800mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 50.6 nC @ 8 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2426 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 680mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-59-3
DMN1019USNQ-13 FAQ
1.How can I place an order for DMN1019USNQ-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN1019USNQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN1019USNQ-13 reliable?
The price and inventory of DMN1019USNQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN1019USNQ-13 is usually 5 days.
3.What payment methods are accepted for DMN1019USNQ-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN1019USNQ-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN1019USNQ-13?
DMN1019USNQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN1019USNQ-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN1019USNQ-13?
For technical support, including DMN1019USNQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN1019USNQ-13 requirements.
6.How does Aetrix verify that DMN1019USNQ-13 is sourced from the original manufacturer or authorized distributors?
All DMN1019USNQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN1019USNQ-13 meets industry standards.
7.What is the process for return or replacement of DMN1019USNQ-13?
All DMN1019USNQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN1019USNQ-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN1019USNQ-13 part is unused and in its original packaging.
Return procedure for DMN1019USNQ-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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