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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMN1019USNQ-7

Name: DMN1019USNQ-7
Brand: Diodes Incorporated
SKU: DMN1019USNQ-7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN1019USNQ-7

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: DMN1019USNQ-7.pdf

Description:: MOSFET BVDSS: 8V~24V SC59 T&R 3K

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Product details

Overview

DMN1019USNQ-7 from Diodes Incorporated is a 12V N-channel enhancement-mode MOSFET in SC59 package, qualified to AEC-Q101 and PPAP-capable for automotive use. It delivers R_DS(ON) = 7 mΩ (typ) at V_GS = 4.5V, supports 9.3A continuous drain current at +25°C, and features ESD-protected gate and halogen/antimony-free "Green" construction. It serves as a high-efficiency load switch in 12V automotive power rails.

For engineers reviewing the DMN1019USNQ-7 datasheet, DMN1019USNQ-7 pinout, DMN1019USNQ-7 application, or DMN1019USNQ-7 equivalent, key selection criteria include low-voltage gate drive compatibility (1.2V–4.5V), junction-to-ambient thermal resistance of 96°C/W on 1"×1" 2 oz. copper PCB, AEC-Q101 qualification status, and SC59 footprint compatibility with space-constrained automotive modules.

Technical Context

This MOSFET employs planar trench-gate technology optimized for low R_DS(ON) at gate voltages down to 1.2V, enabling direct interface with 1.8V and 2.5V logic controllers. Its body diode exhibits V_SD = 0.8 V (typ) at I_S = 10A, supporting synchronous rectification in DC-DC converters.

The device integrates gate protection diodes and is characterized for operation across –55°C to +150°C junction temperature range. Thermal performance is specified under two PCB conditions: 160°C/W (FR-4, minimal pad) and 96°C/W (1"×1" 2 oz. copper), reflecting design flexibility for thermal management in compact automotive ECUs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	12 V - Maximum blocking voltage compatible with automotive 12V battery systems including load dump transients up to ISO 7637-2 Pulse 5a.
R_DS(ON) @ V_GS = 4.5V	7 mΩ (typ) - Enables <100 mW conduction loss at 9.3A, critical for thermally constrained load-switch applications.
I_D Continuous @ +25°C	9.3 A - Sustains full-rated current without derating on standard 1"×1" 2 oz. copper PCB per JEDEC JESD51-7.
Q_g @ V_GS = 4.5V	27.3 nC - Low gate charge reduces switching losses and driver IC stress in high-frequency (>500 kHz) DC-DC topologies.
T_J Range	–55°C to +150°C - Meets extended temperature requirements for under-hood automotive electronics per AEC-Q101 Rev G.
V_GS(TH)	0.35–0.8 V - Ultra-low threshold enables reliable turn-on with weak gate drivers or low-power microcontrollers.
C_iss	2426 pF - Input capacitance impacts gate drive loop stability; value supports robust control with standard 1Ω gate resistors.

Pinout & Package

SC59 package: surface-mount, 3-terminal plastic case (UL 94V-0), 0.014 g weight, matte tin-plated leads, moisture sensitivity level 1. Dimensions: 2.80 mm × 1.60 mm × 1.10 mm (L × W × H), with 0.95 mm lead pitch.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Current return path for load current	Internally connected to exposed die paddle; must be soldered to large copper pour for thermal and electrical integrity.
2 (Gate)	Control terminal for channel conduction	ESD-protected input; requires <1.2V overdrive margin above V_GS(TH) max for guaranteed turn-on in worst-case temp/voltage.
3 (Drain)	Main current-carrying terminal	Connected to high-side or low-side switching node; layout must minimize parasitic inductance for fast switching.

Key Features

Feature	Design Value
AEC-Q101 qualified & PPAP capable	Validated for automotive production use with full change control, traceable lot data, and IATF 16949 manufacturing.
Low R_DS(ON) at 1.5V V_GS	14 mΩ (max) enables direct drive from 1.8V GPIOs without level-shifting, reducing BOM count in modern MCU-based modules.
ESD-protected gate	Withstands ≥2 kV HBM per JESD22-A114, eliminating need for external gate protection in assembly-sensitive environments.
Halogen & antimony free ("Green")	Meets EU RoHS 3 and automotive ELV Directive limits (<900 ppm Br/Cl, <1000 ppm Sb), supporting end-of-life compliance.

Applications

Automotive Load Switch

DC-DC Converter High-Side Switch

Use Scenario: Power sequencing for infotainment head unit subsystems during vehicle ignition cycle.

IC Role / Device Role / Timing Role: Low-side load switch controlling 12V rail to display backlight and audio amplifier ICs.

Use Value: 7 mΩ R_DS(ON) limits voltage drop to <65 mV at 9.3A, preserving system efficiency while meeting ISO 16750-2 cold-crank voltage tolerance.

Use Scenario: 12V-to-5V buck converter in ADAS camera ECU requiring >92% efficiency at 3A output.

IC Role / Device Role / Timing Role: High-side synchronous rectifier MOSFET operating at 1 MHz switching frequency.

Use Value: 27.3 nC Q_g and 2426 pF C_iss enable clean gate drive with 1Ω resistor, minimizing switching loss and EMI generation.

Body Control Module Power Distribution

Engine Control Unit (ECU) Sensor Power Gate

Use Scenario: Individual power gating for LIN bus nodes and door lock actuators in BCM.

IC Role / Device Role / Timing Role: Low-voltage gate-driven load switch activated by 2.5V microcontroller outputs.

Use Value: 12 mΩ R_DS(ON) at V_GS = 2.5V ensures <30 mV dropout at 2.5A, maintaining sensor supply regulation within ±5%.

Use Scenario: Isolating 5V sensor reference supply during ECU sleep mode to meet ISO 19453-3 quiescent current targets.

IC Role / Device Role / Timing Role: Low-threshold (0.35–0.8 V) MOSFET used as active high-side disconnect switch.

Use Value: Sub-1V V_GS(TH) allows reliable turn-off with 0.5V gate bias margin, preventing leakage-induced wake-up in deep-sleep states.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN10H170SFD-13	R_DS(ON) = 12.5 mΩ @ 4.5V, higher V_DSS = 100V, TO-252 package	Designed for higher-voltage industrial loads; unsuitable for space-constrained automotive PCBs due to larger footprint.	Select only if system requires >12V transient immunity and board area permits TO-252 mounting.
IPB180N12N3GATMA1	R_DS(ON) = 1.8 mΩ @ 10V, PG-TSDSON-8 package, no AEC-Q101 certification	Higher performance but lacks automotive qualification; requires full requalification for automotive deployment.	Use only in non-automotive industrial designs where ultra-low R_DS(ON) justifies added validation effort.

Compared with DMN1019USNQ-7, DMN10H170SFD-13 trades lower R_DS(ON) for larger size and over-spec V_DSS, while IPB180N12N3GATMA1 offers superior conduction loss but introduces qualification risk and layout incompatibility in AEC-Q101-compliant programs.

Availability

DMN1019USNQ-7 is available at Aetrix Electronics and suitable for automotive load switching, DC-DC converter high-side control, and engine control unit sensor power gating requiring stable component supply across production lifecycles.

Supply support for DMN1019USNQ-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in certified IATF 16949 facilities.

This MOSFET belongs to Diodes' AEC-Q101-qualified automotive power portfolio, engineered specifically for low-voltage, high-current switching in engine control, body electronics, and ADAS subsystems.

FAQ

Is DMN1019USNQ-7 suitable for hot-swap applications?

Yes - its 12V V_DSS, 7 mΩ R_DS(ON), and 70A pulsed drain rating support controlled inrush limiting. However, external current-sense and gate slew-rate control circuitry is required to meet IEC 61000-4-5 surge immunity and avoid latch-up during plug-in events.

What is the maximum allowable gate-source voltage during transient conditions?

The absolute maximum V_GS is ±8 V per datasheet. During ESD or load-dump events, clamping circuits must limit gate voltage to ≤7.5 V to prevent oxide breakdown, especially at elevated temperatures where V_GS(TH) drifts downward.

Does the SC59 package require special soldering profile considerations?

Yes - due to its small thermal mass and exposed source paddle, the recommended reflow profile uses peak temperature ≤260°C, time above 217°C of 60–90 seconds, and ramp rates ≤3°C/s. Preheating to 150°C minimizes thermal shock to the molded compound.

Can DMN1019USNQ-7 replace older-generation 12V MOSFETs like DMN2004K-7 in existing designs?

Yes - identical SC59 footprint and pinout allow drop-in replacement, but verify gate drive strength: DMN1019USNQ-7's lower V_GS(TH) (0.35–0.8 V vs. 0.4–1.0 V) may cause earlier turn-on and increased shoot-through risk in half-bridge configurations without gate timing adjustment.

DMN1019USNQ-7 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 12 V

Current - Continuous Drain (Id) @ 25°C:: 9.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.2V, 4.5V

Rds On (Max) @ Id, Vgs:: 10mOhm @ 9.7A, 4.5V

Vgs(th) (Max) @ Id:: 800mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 50.6 nC @ 8 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 2426 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 680mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: SC-59-3

DMN1019USNQ-7 FAQ

1.How can I place an order for DMN1019USNQ-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN1019USNQ-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN1019USNQ-7 reliable?

The price and inventory of DMN1019USNQ-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN1019USNQ-7 is usually 5 days.

3.What payment methods are accepted for DMN1019USNQ-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN1019USNQ-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN1019USNQ-7?

DMN1019USNQ-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN1019USNQ-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN1019USNQ-7?

For technical support, including DMN1019USNQ-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN1019USNQ-7 requirements.

6.How does Aetrix verify that DMN1019USNQ-7 is sourced from the original manufacturer or authorized distributors?

All DMN1019USNQ-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN1019USNQ-7 meets industry standards.

7.What is the process for return or replacement of DMN1019USNQ-7?

All DMN1019USNQ-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN1019USNQ-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN1019USNQ-7 part is unused and in its original packaging.

Return procedure for DMN1019USNQ-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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