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Diodes Incorporated DMN1019UVT-13
- Part No.:
- DMN1019UVT-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
DMN1019UVT-13.pdf
- Description:
- MOSFET N-CH 12V 10.7A TSOT26
- Quantity:
- Payment:
- Shipping:
Inventory:7,574
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Product details
Overview
DMN1019UVT-13 from Diodes Incorporated is a 12V N-channel enhancement-mode MOSFET in TSOT26 package, featuring 10 mΩ RDS(ON) at VGS = 4.5V, 10.7A continuous drain current at TA = +25°C, ±8V gate-source voltage rating, and ESD-protected gate. It serves as a high-efficiency load switch in compact DC-DC converters and power management circuits.
For engineers reviewing the DMN1019UVT-13 datasheet, DMN1019UVT-13 pinout, DMN1019UVT-13 application, or DMN1019UVT-13 equivalent, key selection criteria include low-voltage gate drive capability (1.2V–4.5V), normalized RDS(ON) stability across –55°C to +150°C, body diode recovery performance (tRR = 20.55 ns), and TSOT26 thermal resistance (RθJA = 72.2°C/W).
Technical Context
This MOSFET employs a trench-gate process optimized for ultra-low on-resistance while preserving fast switching characteristics: tD(ON) = 4.7 ns, tF = 11.6 ns, and Qg = 28.0 nC at VGS = 4.5V. Its gate threshold voltage (VGS(TH) = 0.35–0.8 V) enables reliable turn-on with logic-level drivers.
The integrated ESD protection diode (±2 µA IGSS) and robust avalanche rating (IAS = 9.7 A, EAS = 4.7 mJ) support rugged operation in transient-prone power rails. The TSOT26 package delivers 1.73 W power dissipation at +25°C ambient with 14.4°C/W junction-to-case thermal resistance.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 12 V - Maximum drain-source blocking voltage for 12V rail applications without derating. |
| RDS(ON) | 10 mΩ @ VGS = 4.5V - Enables <100 mW conduction loss at 10A, critical for thermally constrained PCBs. |
| ID (continuous) | 10.7 A @ TA = +25°C - Supports high-current load switching in space-limited DC-DC modules. |
| Qg | 28.0 nC @ VGS = 4.5V - Low gate charge reduces driver power and enables >1 MHz switching in synchronous buck stages. |
| tRR | 20.55 ns - Fast body diode recovery minimizes shoot-through risk and improves efficiency in hard-switched topologies. |
| RθJA | 72.2 °C/W - Predictable thermal rise on standard FR-4 with 1-inch² copper pad; supports thermal design without heatsinks. |
| VGS(TH) | 0.35–0.8 V - Ensures full enhancement with 1.8V/2.5V/3.3V microcontroller GPIOs without level-shifting. |
Pinout & Package
Package: TSOT26 - 6-pin ultra-thin surface-mount package (2.90 × 2.80 × 0.95 mm), RoHS-compliant matte tin terminals, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (S) | Source | Main current return path; internally connected to exposed thermal pad for enhanced heat transfer. |
| 2 (G) | Gate | Control terminal with ESD protection diode; requires <1.2V minimum for partial turn-on, stable at 1.5V+. |
| 3 (D) | Drain | High-side or low-side power path node; electrically tied to package backside metal for low-inductance layout. |
| 4 (D) | Drain | Second drain connection-parallel routing reduces package inductance and improves current sharing in high-frequency switching. |
| 5 (G) | Gate | Redundant gate terminal for improved gate drive loop integrity and reduced ringing in dense layouts. |
| 6 (S) | Source | Secondary source terminal-enables Kelvin sensing or split-source routing to minimize common-source inductance. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at 1.5V VGS | 18 mΩ - Enables use with battery-powered systems operating down to 1.5V supply (e.g., coin-cell IoT sensors). |
| ESD-protected gate | ±2 µA IGSS at ±8V - Eliminates need for external gate protection in automated assembly environments. |
| Normalized RDS(ON) stability | ≤1.6× variation from –55°C to +150°C - Ensures predictable conduction loss across automotive and industrial temperature ranges. |
| Ultra-low Qgd/Qgs ratio | 5.6 nC / 3.2 nC = 1.75 - Reduces Miller effect, enabling clean switching with minimal gate driver strength requirements. |
| Halogen- and antimony-free | <900 ppm Br, <900 ppm Cl, <1000 ppm Sb - Meets IPC-1752A Class 3 environmental compliance for green electronics manufacturing. |
Applications
| USB Power Delivery Switch | Point-of-Load DC-DC Converter |
|---|---|
|
Use Scenario: Bidirectional 5–20V USB PD power path control in portable docking stations requiring reverse-current blocking and fast fault response. IC Role / Device Role: Low-side load switch with integrated body diode reverse recovery (tRR = 20.55 ns) and 12V VDSS margin. Use Value: Prevents backfeed during hot-plug events while maintaining <10 mΩ on-resistance for <50 mW loss at 2A, extending battery runtime. |
Use Scenario: High-frequency (≥1 MHz) synchronous rectifier in 3.3V/5V buck converters powering FPGA I/O banks or memory interfaces. IC Role / Device Role: Bottom-side FET with 28.0 nC Qg and 11.6 ns tF, driven directly by controller's 3.3V gate output. Use Value: Achieves >94% efficiency at 6A load due to low Qg/RDS(ON) trade-off and minimized switching losses. |
| Industrial Sensor Node Power Rail | Automotive Body Control Module |
|
Use Scenario: Always-on 3.3V/5V power switch for MEMS accelerometers and wireless transceivers in battery-backed condition monitoring nodes. IC Role / Device Role: Logic-level N-channel MOSFET controlled by ultra-low-power MCU GPIO (1.8V/2.5V compatible). Use Value: Full turn-on at 1.8V VGS (RDS(ON) = 14 mΩ) ensures reliable wake-up from deep sleep with <1 µA leakage (IDSS ≤ 1 µA). |
Use Scenario: 12V load switching for LED interior lighting and window motor drivers in BCMs operating from automotive battery (9–16V range). IC Role / Device Role: Protected high-current switch with 9.7A avalanche rating (IAS) and 4.7 mJ energy handling (EAS). Use Value: Withstands inductive kickback from motor loads without external snubbers, reducing BOM count and board area. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3025LSD-13 | 30V VDSS, 25 mΩ RDS(ON) @ 4.5V, SO-8 package | Higher voltage margin but larger footprint and higher RDS(ON); unsuitable for space-constrained 12V designs. | Select when 30V system margin or SO-8 thermal mass is required; avoid if board area or 1.5V–2.5V gate drive is critical. |
| AO3414 | 20V VDSS, 11 mΩ RDS(ON) @ 4.5V, SOT-23-3 package, no ESD protection | Same RDS(ON) but lacks integrated gate ESD diode and has lower VDSS margin for 12V transients. | Choose only in cost-sensitive, non-automated assembly where external ESD protection is acceptable and 20V rating suffices. |
Compared with DMN3025LSD-13 and AO3414, DMN1019UVT-13 uniquely combines 12V rating, sub-10mΩ on-resistance at 4.5V, ESD protection, and TSOT26 size-making it optimal for miniaturized, robust 12V load switching where gate drive voltage headroom is limited.
Availability
DMN1019UVT-13 is available at Aetrix Electronics and suitable for USB PD power path control, point-of-load DC-DC converters, and industrial sensor node power rails requiring stable component supply and long-term lifecycle assurance.
Supply support for DMN1019UVT-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, computing, and consumer markets.
DMN1019UVT belongs to Diodes' "Ultra-Low RDS(ON) Logic-Level MOSFET" product line, engineered specifically for space-constrained, high-efficiency 12V power switches requiring gate drive compatibility with 1.2V–4.5V controllers.
FAQ
What is the maximum continuous drain current at +70°C ambient?
The DMN1019UVT-13 supports 8.6 A continuous drain current at TA = +70°C with device mounted on an FR-4 board using a 1-inch² copper pad (per Note 5). This derating reflects its 72.2°C/W RθJA and 150°C maximum junction temperature, ensuring safe operation in thermally demanding enclosures.
Does this MOSFET require external gate resistors for stability?
No external gate resistor is required for basic stability due to its low gate resistance (Rg = 1.1 Ω) and optimized Crss/Ciss ratio. However, a 5–10 Ω series resistor is recommended when driving from high-impedance sources or in layouts with >5 cm gate trace length to suppress ringing observed in tD(ON)/tD(OFF) waveforms.
Can DMN1019UVT-13 be used in reverse-conduction mode (source-to-drain)?
Yes-the integrated body diode supports forward conduction up to 2 A (IS) with VSD = 0.8–1.2 V at 10 A. Its tRR = 20.55 ns and Qrr = 4.5 nC enable use in synchronous rectification, though dedicated dual-N-channel configurations are preferred for bidirectional high-efficiency switching.
Is the TSOT26 package lead-free and RoHS compliant?
Yes-DMN1019UVT-13 is fully RoHS 2 compliant (2011/65/EU) with no purposely added lead, halogen-free (<900 ppm Br + Cl), and antimony-free (<1000 ppm Sb), meeting IPC-1752A Class 3 green manufacturing standards per Diodes Incorporated's published definitions.
DMN1019UVT-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 12 V
- Current - Continuous Drain (Id) @ 25°C:
- 10.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.2V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 10mOhm @ 9.7A, 4.5V
- Vgs(th) (Max) @ Id:
- 800mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 50.4 nC @ 8 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2588 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.73W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TSOT-26
DMN1019UVT-13 FAQ
1.How can I place an order for DMN1019UVT-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN1019UVT-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN1019UVT-13 reliable?
The price and inventory of DMN1019UVT-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN1019UVT-13 is usually 5 days.
3.What payment methods are accepted for DMN1019UVT-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN1019UVT-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN1019UVT-13?
DMN1019UVT-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN1019UVT-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN1019UVT-13?
For technical support, including DMN1019UVT-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN1019UVT-13 requirements.
6.How does Aetrix verify that DMN1019UVT-13 is sourced from the original manufacturer or authorized distributors?
All DMN1019UVT-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN1019UVT-13 meets industry standards.
7.What is the process for return or replacement of DMN1019UVT-13?
All DMN1019UVT-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN1019UVT-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN1019UVT-13 part is unused and in its original packaging.
Return procedure for DMN1019UVT-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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