Diodes Incorporated DMN1021UCA4-7
- Part No.:
- DMN1021UCA4-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 4-XFDFN
- Datasheet:
-
DMN1021UCA4-7.pdf
- Description:
- MOSFET BVDSS: 8V~24V X2-TSN0808-
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
DMN1021UCA4 from Diodes Incorporated is an N-channel enhancement-mode MOSFET in a 0.76 mm × 0.76 mm CSP package, rated for 12 V VDS, 20 mΩ RDS(ON) at VGS = 2.5 V, and 7.4 A continuous drain current at TA = +25°C. It serves as a low-voltage, high-efficiency load switch or synchronous rectifier in space-constrained battery management and DC-DC converter circuits.
For engineers reviewing the DMN1021UCA4 datasheet, DMN1021UCA4 pinout, DMN1021UCA4 application, or DMN1021UCA4 equivalent, key selection criteria include its ultra-low profile (0.275 mm height), gate threshold voltage of 0.73 V (typ), 1.8 W power dissipation on FR-4 PCB, and J-STD-020 Level 1 moisture sensitivity - all critical for miniaturized portable and automotive power designs.
Technical Context
This MOSFET employs a trench-gate silicon process optimized for low RDS(ON) at logic-level gate drive (VGS ≥ 2.5 V), enabling direct interface with 3.3 V or 2.5 V microcontrollers without level-shifting. Its 409 pF input capacitance and 5.1 nC total gate charge support fast switching in high-frequency buck converters.
The device integrates a body diode with 0.74 V forward voltage at 1.8 A and exhibits normalized RDS(ON) variation of ≤1.6× across −55°C to +150°C junction temperature, ensuring stable conduction in thermally aggressive environments like battery packs and PMICs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 12 V - Maximum blocking voltage compatible with single-cell Li-ion (4.2 V) and dual-cell (8.4 V) battery systems with margin. |
| RDS(ON) | 20 mΩ @ VGS = 2.5 V - Enables <150 mW conduction loss at 3.5 A, critical for >95% efficiency in compact DC-DC stages. |
| ID (continuous) | 7.4 A @ TA = +25°C - Supports high-current load switching in USB PD sink paths and smart battery protection ICs. |
| Qg | 5.1 nC - Allows sub-10 ns turn-on delay and 10.8 ns rise time at 4 V gate drive, suitable for 1–2 MHz switching frequencies. |
| Package | X2-TSN0808-4 CSP - 0.76 mm × 0.76 mm footprint with 0.275 mm height enables placement under connectors or near BGA processors. |
| TJ range | −55°C to +150°C - Qualified for extended industrial and automotive cabin ambient conditions per AEC-Q101 guidance. |
Pinout & Package
Package: X2-TSN0808-4, 4-terminal Chip-Scale Package (CSP) with NiAu-plated terminals, moisture sensitivity Level 1, weight 0.00034 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Logic-level control input; 0.73 V typical VGS(TH) allows direct drive from 1.8 V/2.5 V/3.3 V I/O without external biasing. |
| 2 (D) | Drain | Main current path output; connected to high-side or low-side switching node depending on topology (e.g., buck high-side or boost low-side). |
| 3 (S) | Source | Reference node for gate drive; tied to ground in low-side switches or to SW node in high-side configurations with bootstrap supply. |
| 4 (S) | Source (redundant) | Second source terminal for lower parasitic inductance and improved thermal spreading in high-current paths. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-small CSP footprint | 0.76 mm × 0.76 mm - Reduces PCB area by >70% vs. SOT-23, enabling integration into wearables and hearing aids. |
| Low-profile height | 0.275 mm typical - Permits stacking under thin-film shields or beneath flex PCBs in multi-layer mobile modules. |
| Lead-free & green construction | Halogen- and antimony-free (<900 ppm Br/Cl, <1000 ppm Sb); compliant with RoHS 3 and JEDEC MSL-1 standards. |
| Thermal resistance | RθJA = 70.6°C/W on FR-4 (min pad layout) - Delivers 1.8 W power handling without heatsink in space-limited layouts. |
Applications
| Battery Protection Circuit | USB-C Power Delivery Sink |
|---|---|
|
Use Scenario: Bidirectional overcurrent and short-circuit protection in single-cell Li-ion battery packs using integrated protection ICs. IC Role / Device Role: Low-side main discharge switch controlled by protection ASIC to interrupt fault currents within microseconds. Use Value: 20 mΩ RDS(ON) limits voltage drop to <84 mV at 4.2 A, preserving battery cutoff accuracy and minimizing self-heating during sustained load. |
Use Scenario: Input power path management in portable USB-C devices accepting up to 20 V/5 A, requiring reverse-blocking and hot-swap capability. IC Role / Device Role: High-side load switch enabling controlled inrush limiting and VBUS disconnect during cable unplug events. Use Value: 12 V VDS rating with 35 A pulsed current capability supports robust 20 V transient clamping and 5 A steady-state operation per USB PD 3.1 spec. |
| Point-of-Load DC-DC Converter | Smartphone Power Management Unit |
|
Use Scenario: Synchronous rectifier in 1–2 MHz buck converters supplying core voltage to application processors or RF transceivers. IC Role / Device Role: Low-side switch complementing high-side GaN or Si MOSFET to minimize conduction and switching losses. Use Value: 5.1 nC Qg and 10.8 ns tr reduce gate drive loss and enable >92% efficiency at 3 A output with minimal dead-time penalty. |
Use Scenario: Always-on rail switching for sensors, NFC, and Bluetooth LE subsystems in smartphones with strict standby current budgets. IC Role / Device Role: Ultra-low-leakage load switch isolating peripherals during deep sleep mode to suppress μA-level quiescent drain. Use Value: 1 μA max IDSS at 9.6 V and 0.73 V VGS(TH) ensure reliable turn-off with 1.8 V GPIO, extending battery life beyond 7 days in idle state. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN1021UCB4-7 | Same die, but in X2-WLB0808-4 package with 0.35 mm height and larger 0.8 mm × 0.8 mm footprint. | Less suitable for ultra-thin devices; better thermal performance (RθJA = 62.5°C/W) due to increased copper area. | Select when board-level thermal management outweighs height constraints, e.g., in industrial PMICs with forced airflow. |
| AO3414 | SOT-23 package (2.9 mm × 1.3 mm), 20 mΩ RDS(ON) @ VGS = 4.5 V only; VGS(TH) = 1.0 V min - requires ≥3.3 V gate drive. | Not logic-level compatible below 3.3 V; unsuitable for direct 1.8 V MCU control; higher parasitic inductance limits >500 kHz use. | Choose only if legacy SOT-23 layout exists and gate drive voltage is guaranteed ≥3.3 V; avoid in new ultra-compact designs. |
Compared with DMN1021UCB4-7, the DMN1021UCA4 trades 0.075 mm height reduction for ~13% higher RθJA; versus AO3414, it delivers true 2.5 V logic compatibility and 60% smaller footprint - making it optimal for next-gen wearables and foldable displays where volume and gate drive voltage are limiting factors.
Availability
DMN1021UCA4 is available at Aetrix Electronics and suitable for battery management systems, USB-C power delivery sinks, and point-of-load DC-DC converters requiring stable component supply, consistent parametric performance, and long-term lifecycle assurance.
Supply support for DMN1021UCA4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-performance, energy-efficient components for power management, signal integrity, and connectivity applications.
The DMN1021UCA4 belongs to Diodes' X2-CSP logic-level MOSFET product line, engineered specifically for ultra-compact, high-density power switching in portable electronics where board space, thermal envelope, and low-voltage control are primary design constraints.
FAQ
Is DMN1021UCA4 qualified for automotive applications?
No - while the DMN1021UCA4 meets AEC-Q101 stress-test guidelines in structure and process, it is not officially AEC-Q101 qualified or PPAP-capable. Diodes offers the pin-compatible DMN1021UCA4Q variant (with "Q" suffix) for automotive-grade applications requiring full qualification and IATF 16949 manufacturing.
What is the maximum safe operating frequency with DMN1021UCA4 in a buck converter?
Based on its 5.1 nC Qg, 10.8 ns tr, and 31.0 ns td(OFF), the DMN1021UCA4 supports stable operation up to 2 MHz in well-designed synchronous buck topologies with optimized gate driver impedance and PCB layout - verified in Diodes' reference design DN05021.
Can DMN1021UCA4 be used in reverse-biased (source-to-drain) conduction mode?
Yes - its body diode has a typical VSD of 0.74 V at 1.8 A and is rated for continuous forward conduction. However, reverse-biased operation (drain negative relative to source) is limited to −12 V by VDS rating; no avalanche energy rating is specified, so repetitive reverse recovery must be managed externally.
Does the X2-TSN0808-4 package require special reflow or soldering profiles?
Yes - due to its 0.275 mm height and fine-pitch terminals, the DMN1021UCA4 requires adherence to IPC-J-STD-020 Level 1 profile: peak temperature ≤260°C, time above 217°C ≤60 seconds, and ramp rate ≤3°C/s. Diodes recommends stencil aperture 0.12 mm thick with 0.15 mm opening for optimal solder paste release.
DMN1021UCA4-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 4-XFDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 12 V
- Current - Continuous Drain (Id) @ 25°C:
- 7.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 21mOhm @ 1.8A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 5.1 nC @ 4 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 409 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 690mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- X2-TSN0808-4
DMN1021UCA4-7 FAQ
1.How can I place an order for DMN1021UCA4-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN1021UCA4-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN1021UCA4-7 reliable?
The price and inventory of DMN1021UCA4-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN1021UCA4-7 is usually 5 days.
3.What payment methods are accepted for DMN1021UCA4-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN1021UCA4-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN1021UCA4-7?
DMN1021UCA4-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN1021UCA4-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN1021UCA4-7?
For technical support, including DMN1021UCA4-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN1021UCA4-7 requirements.
6.How does Aetrix verify that DMN1021UCA4-7 is sourced from the original manufacturer or authorized distributors?
All DMN1021UCA4-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN1021UCA4-7 meets industry standards.
7.What is the process for return or replacement of DMN1021UCA4-7?
All DMN1021UCA4-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN1021UCA4-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN1021UCA4-7 part is unused and in its original packaging.
Return procedure for DMN1021UCA4-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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