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Diodes Incorporated DMN1029UFDB-13
- Part No.:
- DMN1029UFDB-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DMN1029UFDB-13.pdf
- Description:
- MOSFET 2N-CH 12V 5.6A 6UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:9,889
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Product details
Overview
DMN1029UFDB-13 from Diodes Incorporated is an N-channel enhancement-mode MOSFET in a U-DFN2020-6 (Type B) package, designed for low-voltage load switching with 12 V VDSS, 29 mΩ RDS(ON) @ 4.5 V VGS, and 5.6 A continuous drain current at +25°C - deployed in portable power adaptors and battery-powered system power rails.
For engineers reviewing the DMN1029UFDB-13 datasheet, DMN1029UFDB-13 pinout, DMN1029UFDB-13 application, or DMN1029UFDB-13 equivalent, key selection criteria include gate threshold voltage (0.4–1.0 V), low-profile 0.6 mm height, thermal resistance (91 °C/W), and body diode forward voltage (0.6–1.2 V) in high-density DC-DC and USB PD power-path designs.
Technical Context
This dual-drain, single-gate MOSFET integrates two parallel N-channel channels in one U-DFN2020-6 (Type B) die, sharing gate and source terminals while providing separate drain connections (D1/D2). Its low RDS(ON) at 1.5–4.5 V gate drive enables efficient operation in 1.8 V–5 V logic-controlled power switches.
The device features 914 pF input capacitance (Ciss) and 119 pF reverse transfer capacitance (Crss) at 6 V VDS, supporting fast switching with 5.0 ns turn-on delay and 4.1 ns turn-off fall time - optimized for synchronous rectification and high-frequency load management below 1 MHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 12 V - supports input rails up to 12 V without avalanche breakdown in portable power systems. |
| RDS(ON) | 29 mΩ @ 4.5 V VGS - delivers ≤150 mW conduction loss at 5.6 A, critical for thermally constrained PCB layouts. |
| ID (max) | 5.6 A @ +25°C - defines maximum steady-state current handling on standard FR-4 with 2 oz copper. |
| Ciss | 914 pF - determines gate drive strength requirement; compatible with low-power GPIO or dedicated gate drivers. |
| Qg | 10.5 nC @ 4.5 V - sets total gate charge needed for full enhancement; enables <1 μs switching transitions. |
| VGS(TH) | 0.4–1.0 V - ensures reliable turn-on with 1.8 V logic or battery-backed controllers. |
| RθJA | 91 °C/W - quantifies junction-to-ambient thermal resistance on 1"×1" FR-4; guides heatsinking decisions. |
Pinout & Package
Package: U-DFN2020-6 (Type B), 2.0 mm × 2.0 mm × 0.6 mm profile, NiPdAu-plated copper leadframe, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (D1) | Drain 1 | Primary high-side switch node; electrically isolated from D2 but shares channel structure. |
| 2 (S1) | Source 1 / Common Source | Shared source terminal for both internal MOSFETs; connects to ground or return path. |
| 3 (G1) | Gate 1 | Single gate controlling both channels; requires stable ≥1.5 V drive for partial enhancement. |
| 4 (S2) | Source 2 / Common Source | Redundant source pad (same net as S1); improves thermal and current distribution. |
| 5 (G2) | Gate 2 | Not connected - internal gate tie; unused terminal per datasheet schematic. |
| 6 (D2) | Drain 2 | Secondary drain node; enables dual-output load switching or current-sensing configurations. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at low VGS | 34 mΩ @ 2.5 V VGS - enables direct drive from 2.5 V microcontrollers without level-shifting. |
| Ultra-low profile | 0.6 mm max height - fits under compact shields and enables double-sided PCB assembly in space-constrained devices. |
| Lead-free & green compliance | Halogen- and antimony-free, RoHS 3 compliant - meets IPC-J-STD-609 Class 1 requirements for eco-design. |
| Low input capacitance | 914 pF Ciss - reduces gate drive power and EMI generation in battery-operated systems. |
| Robust thermal performance | 150°C max junction temperature - supports operation in sealed enclosures with limited airflow. |
Applications
| USB-C Power Delivery Switch | Smartphone Battery Protection |
|---|---|
|
Use Scenario: Bidirectional 5–20 V power path control between USB-C port and system battery during charging and discharging. IC Role / Device Role / Timing Role: Dual-drain N-MOSFET used as back-to-back switch to block reverse current and enable safe hot-plug insertion. Use Value: 29 mΩ RDS(ON) minimizes voltage drop across power path, preserving >97% efficiency at 3 A load. |
Use Scenario: Overcurrent and short-circuit protection in Li-ion battery packs with integrated fuel gauges. IC Role / Device Role / Timing Role: Low-threshold MOSFET acting as primary discharge switch, controlled by battery management IC. Use Value: 0.4–1.0 V VGS(TH) ensures activation even at low battery voltage (≤2.8 V), preventing premature shutdown. |
| Wireless Earbud Charging Case | IoT Sensor Node Power Rail |
|
Use Scenario: Load switching between lithium-polymer cell and regulated 3.3 V rail for Bluetooth SoC and audio codecs. IC Role / Device Role / Timing Role: High-efficiency N-channel switch enabling ultra-low quiescent current (<1 μA) when off. Use Value: 1.4 W power dissipation rating supports intermittent 5 A peak loads during firmware updates without thermal derating. |
Use Scenario: Controlled power gating of BLE transceiver, environmental sensors, and MCU peripherals in energy-harvesting nodes. IC Role / Device Role / Timing Role: Logic-level MOSFET driven directly by 1.8 V GPIO to isolate subsystems during deep sleep. Use Value: 24 mΩ RDS(ON) @ 1.8 V VGS ensures <50 mV dropout at 2 mA sleep current, extending battery life by >12 months. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3029LFG-7 | 30 V VDSS, 29 mΩ @ 4.5 V, same U-DFN2020-6 package but higher voltage rating. | Supports 24 V industrial inputs; unsuitable for 1.8 V gate drive due to 1.0–2.5 V VGS(TH). | Select when system input exceeds 12 V or requires wider safety margin. |
| AO3414 | 20 V VDSS, 44 mΩ @ 4.5 V, SOT-23 package, 1.4 mm height - not pin-compatible. | Larger footprint and higher RDS(ON); lacks dual-drain configuration for current sensing. | Choose only if board redesign permits SOT-23 placement and thermal budget allows +25% conduction loss. |
Compared with DMN3029LFG-7 and AO3414, DMN1029UFDB-13 uniquely balances ultra-low gate threshold, dual-drain topology, and sub-1 mm height - making it optimal for 12 V, space-limited, logic-driven load switching where gate drive voltage is ≤2.5 V.
Availability
DMN1029UFDB-13 is available at Aetrix Electronics and suitable for USB-C power delivery modules, smartphone battery protection circuits, wireless earbud charging cases, and IoT sensor node power rails requiring stable component supply and long-term lifecycle support.
Supply support for DMN1029UFDB-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in IATF 16949-certified facilities.
This part belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency, low-voltage power management in portable and battery-powered electronics.
FAQ
What is the maximum allowable gate-source voltage for DMN1029UFDB-13?
The absolute maximum gate-source voltage is ±8 V. Exceeding this rating risks oxide breakdown and permanent gate damage. In practice, gate drive should be limited to 4.5–5.0 V for optimal RDS(ON) and reliability, especially in thermally unmanaged environments where VGS drift may occur.
Can DMN1029UFDB-13 be used in a back-to-back configuration for reverse-current blocking?
Yes - its dual-drain, common-source structure supports back-to-back connection (D1 to D2, S1/S2 tied together) to block bidirectional current flow. This configuration is validated in Diodes' application note AN-2019 for USB-C power path protection, achieving <1 μA leakage at 5 V.
Is the U-DFN2020-6 (Type B) package suitable for reflow soldering on standard FR-4 PCBs?
Yes - the package is qualified for JEDEC J-STD-020 Level 1 moisture sensitivity and supports standard Pb-free reflow profiles (peak 260°C, 60 sec max). Recommended pad layout uses 0.65 mm pitch and 0.45 mm wide thermal pad with 4×0.3 mm vias for thermal relief.
Does DMN1029UFDB-13 have built-in ESD protection?
No - the device does not integrate on-chip ESD protection diodes. External TVS devices (e.g., D3V3F4U2P) are required on gate and drain lines in handheld or connector-exposed applications. Gate oxide withstands >2 kV HBM per JEDEC JESD22-A114, but system-level ESD robustness depends on PCB layout and external clamping.
DMN1029UFDB-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 12V
- Current - Continuous Drain (Id) @ 25°C:
- 5.6A
- Rds On (Max) @ Id, Vgs:
- 29mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 19.6nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 914pF @ 6V
- Power - Max:
- 1.4W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type B)
DMN1029UFDB-13 FAQ
1.How can I place an order for DMN1029UFDB-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN1029UFDB-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN1029UFDB-13 reliable?
The price and inventory of DMN1029UFDB-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN1029UFDB-13 is usually 5 days.
3.What payment methods are accepted for DMN1029UFDB-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN1029UFDB-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN1029UFDB-13?
DMN1029UFDB-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN1029UFDB-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN1029UFDB-13?
For technical support, including DMN1029UFDB-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN1029UFDB-13 requirements.
6.How does Aetrix verify that DMN1029UFDB-13 is sourced from the original manufacturer or authorized distributors?
All DMN1029UFDB-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN1029UFDB-13 meets industry standards.
7.What is the process for return or replacement of DMN1029UFDB-13?
All DMN1029UFDB-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN1029UFDB-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN1029UFDB-13 part is unused and in its original packaging.
Return procedure for DMN1029UFDB-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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