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Diodes Incorporated DMN1029UFDB-7
- Part No.:
- DMN1029UFDB-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DMN1029UFDB-7.pdf
- Description:
- MOSFET 2N-CH 12V 5.6A 6UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:136,808
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Product details
Overview
DMN1029UFDB from Diodes Incorporated is an N-channel enhancement-mode MOSFET in a U-DFN2020-6 (Type B) package, rated for 12 V VDSS, 29 mΩ RDS(ON) @ 4.5 V VGS, and 5.6 A continuous drain current at +25°C - optimized for low-voltage load switching in portable power adaptors and battery-powered systems.
For engineers reviewing the DMN1029UFDB datasheet, DMN1029UFDB pinout, DMN1029UFDB application, or DMN1029UFDB equivalent, this device supports high-efficiency power management where low gate charge (10.5 nC), low input capacitance (914 pF), and sub-1 V gate threshold (0.4–1.0 V) enable robust operation with 1.5–4.5 V logic-level drive in space-constrained designs.
Technical Context
This MOSFET employs a trench-gate process to achieve ultra-low RDS(ON) while maintaining fast switching performance: tD(ON) = 5.0 ns, tR = 10.5 ns, and Qgd = 1.6 nC ensure minimal switching loss in high-frequency DC-DC and load-switching topologies.
Its dual-source/dual-drain internal structure (S1/D1 and S2/D2) enables symmetrical conduction paths and reduced layout parasitics; thermal resistance RθJA is 91 °C/W on standard FR-4, supporting 1.4 W steady-state dissipation without forced cooling.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 12 V - Maximum blocking voltage compatible with single-cell Li-ion and USB PD 3.0 auxiliary rails. |
| RDS(ON) | 29 mΩ @ VGS = 4.5 V - Enables ≤150 mW conduction loss at 5.6 A, critical for thermally limited portable PCBs. |
| Qg | 10.5 nC @ VGS = 4.5 V - Low gate charge reduces driver power demand and enables efficient operation with microcontroller GPIOs. |
| Ciss | 914 pF - Low input capacitance minimizes Miller effect and improves noise immunity in high-dV/dt environments. |
| VGS(TH) | 0.4–1.0 V - Guaranteed turn-on with 1.2 V logic, supporting direct interface to low-power MCUs and PMICs. |
| ID (max) | 5.6 A @ TA = +25°C - Continuous current rating validated on 1"×1" 2 oz copper FR-4, suitable for sustained load-switch duty cycles. |
| RθJA | 91 °C/W - Junction-to-ambient thermal resistance establishes realistic derating curves for ambient temperatures up to +70°C. |
Pinout & Package
Package: U-DFN2020-6 (Type B), 2.0 mm × 2.0 mm × 0.6 mm profile, NiPdAu-plated terminals, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (D1) | Drain 1 | Primary high-side switch node; electrically tied to Pin 4 (D2) internally - used for parallel drain connection or dual-path routing. |
| Pin 2 (S1) | Source 1 | First source terminal; connected to internal N-channel channel; paired with Pin 5 (G1) for local gate control. |
| Pin 3 (G1) | Gate 1 | Control input for first MOSFET cell; shares gate oxide with Pin 6 (G2); requires <±8 V drive. |
| Pin 4 (D2) | Drain 2 | Second drain terminal; internally shorted to Pin 1 - enables symmetric PCB layout and current sharing across two drain pads. |
| Pin 5 (G2) | Gate 2 | Redundant gate terminal; electrically identical to Pin 3 - improves gate drive impedance matching and reduces layout-induced asymmetry. |
| Pin 6 (S2) | Source 2 | Second source terminal; internally connected to Pin 2 - provides dual-source routing for low-inductance return paths in high-speed switching. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at 1.5 V VGS | 65 mΩ - Enables functional switching down to 1.5 V supply, supporting legacy logic and low-VCC PMIC outputs. |
| Low-profile U-DFN2020-6 | 0.6 mm max height - Fits under mechanical shields and in ultra-thin consumer enclosures without thermal pad interference. |
| Lead-free & Halogen-free | RoHS 3 compliant, <900 ppm Br/Cl, <1000 ppm Sb - Meets IPC-1752A environmental reporting and automotive PPAP requirements. |
| Low Qgd/Qg ratio | 1.6 nC / 10.5 nC = 0.15 - Reduces Miller plateau duration and improves hard-switching robustness in buck and load-switch configurations. |
| Enhanced body diode VSD | 0.6–1.2 V @ 1 A - Lower forward drop than standard MOSFETs improves reverse-current efficiency in OR-ing and hot-swap applications. |
Applications
| USB-C Power Delivery Load Switch | Li-ion Battery Protection Circuit |
|---|---|
Use Scenario: Controls 5–20 V power path between USB-C port and system rail during plug-in detection and fault isolation. IC Role / Device Role / Timing Role: High-side load switch with fast turn-off (<21 ns total switching time) to prevent inrush and overvoltage transients. Use Value: 29 mΩ RDS(ON) limits voltage drop to <150 mV at 5 A, preserving PD negotiation margin while enabling compact 2 mm × 2 mm layout. |
Use Scenario: Isolates battery cell from charging circuit during overtemperature or overcurrent events in single-cell packs. IC Role / Device Role / Timing Role: Bidirectional current-blocking switch activated by protection IC's open-drain output. Use Value: 0.4–1.0 V VGS(TH) ensures reliable turn-on with 1.8 V protection IC outputs; low Ciss prevents false triggering from ESD coupling. |
| Portable SSD Power Sequencing | Wireless Earbud Charging Case |
Use Scenario: Enables controlled power-up of NVMe controller and NAND flash after system reset, preventing bus contention. IC Role / Device Role / Timing Role: Controlled ramp-rate load switch using RC-filtered gate drive to limit dI/dt. Use Value: 10.5 nC Qg allows precise timing control with 100 kΩ/1 nF gate network, achieving <5 ms soft-start without external drivers. |
Use Scenario: Powers Bluetooth SoC and sensor subsystems only when lid is closed and battery voltage exceeds 3.3 V. IC Role / Device Role / Timing Role: Logic-level enabled high-side switch driven directly from MCU GPIO with no level shifter. Use Value: Sub-1 V gate threshold eliminates need for discrete level translation; 0.6 mm height fits within 4 mm-thick earbud case stackup. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN10H260SFG-7 | 260 mΩ RDS(ON) @ 4.5 V, 10 V VDSS, SOT-23-3 package | Higher on-resistance, larger footprint, lower current capability (2.6 A) | Select for cost-sensitive, low-current applications where board area is less constrained. |
| AO3414 | 26 mΩ RDS(ON) @ 4.5 V, 20 V VDSS, SOT-23-3, higher Qg (15 nC) | Wider voltage range but slower switching and larger package; not RoHS 3/halogen-free certified | Choose when 20 V blocking is required and environmental compliance is secondary to availability. |
Compared with DMN1029UFDB, DMN10H260SFG-7 trades 9× higher RDS(ON) for lower unit cost and simpler assembly, while AO3414 offers marginally lower on-resistance but sacrifices thermal density, environmental compliance, and gate-drive efficiency - making DMN1029UFDB optimal for miniaturized, high-efficiency, and regulated-market designs.
Availability
DMN1029UFDB is available at Aetrix Electronics and suitable for USB-C power delivery load switches, Li-ion battery protection circuits, portable SSD power sequencing, and wireless earbud charging cases requiring stable component supply and full RoHS 3 compliance.
Supply support for DMN1029UFDB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
This device belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency, low-voltage power management in portable and battery-operated electronics - emphasizing low RDS(ON), logic-level drive, and ultra-small packaging.
FAQ
What is the maximum safe operating junction temperature for DMN1029UFDB?
The absolute maximum junction temperature is +150°C per the datasheet. Derating begins at +25°C ambient, with RθJA = 91 °C/W limiting continuous power dissipation to 1.4 W on standard FR-4. Transient thermal resistance data (Figure 13) supports pulsed operation up to 2.2 W for durations under 5 seconds.
Can DMN1029UFDB be used in bidirectional current applications?
Yes - its intrinsic body diode has VSD = 0.6–1.2 V at 1 A and is rated for 1 A continuous forward current. When used in OR-ing or hot-swap configurations, the device conducts in either direction depending on voltage polarity, provided VGS remains above threshold to maintain low RDS(ON) in the forward direction.
Is a gate resistor required for reliable switching?
A gate resistor is recommended to dampen ringing and control slew rate: 1–10 Ω is typical for 4.5 V drive. The datasheet specifies Rg = 1.26 Ω (measured), and Figure 12's SOA curve assumes RG = 1 Ω in switching tests - omitting it risks overshoot, shoot-through, or EMI in high-speed layouts.
Does DMN1029UFDB meet AEC-Q200 for automotive use?
No - the datasheet explicitly states that automotive-qualified versions require separate AEC-Q200 qualification, PPAP capability, and IATF 16949 manufacturing. This part is intended for commercial/industrial portable electronics; Diodes offers pin-compatible AEC-Q200 variants (e.g., DMN1029UFDBQ-7) with full automotive change control.
DMN1029UFDB-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 12V
- Current - Continuous Drain (Id) @ 25°C:
- 5.6A
- Rds On (Max) @ Id, Vgs:
- 29mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 19.6nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 914pF @ 6V
- Power - Max:
- 1.4W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type B)
DMN1029UFDB-7 FAQ
1.How can I place an order for DMN1029UFDB-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN1029UFDB-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN1029UFDB-7 reliable?
The price and inventory of DMN1029UFDB-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN1029UFDB-7 is usually 5 days.
3.What payment methods are accepted for DMN1029UFDB-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN1029UFDB-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN1029UFDB-7?
DMN1029UFDB-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN1029UFDB-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN1029UFDB-7?
For technical support, including DMN1029UFDB-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN1029UFDB-7 requirements.
6.How does Aetrix verify that DMN1029UFDB-7 is sourced from the original manufacturer or authorized distributors?
All DMN1029UFDB-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN1029UFDB-7 meets industry standards.
7.What is the process for return or replacement of DMN1029UFDB-7?
All DMN1029UFDB-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN1029UFDB-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN1029UFDB-7 part is unused and in its original packaging.
Return procedure for DMN1029UFDB-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMN1029UFDB-7 Tags
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