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Diodes Incorporated DMN1053UCP4-7

Part No.:
DMN1053UCP4-7
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
4-XFBGA, CSPBGA
Datasheet:
AetrixDMN1053UCP4-7.pdf
Description:
MOSFET N-CH 12V 2.7A X3DSN0808-4
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,572

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Product details

Overview

DMN1053UCP4 from Diodes Incorporated is an N-channel enhancement-mode MOSFET optimized for high-efficiency, ultra-fast switching in compact power management systems. It delivers 38 mΩ RDS(ON) at VGS = 4.5 V, supports 4.0 A continuous drain current, and features a 12 V VDSS rating - enabling use in space-constrained DC-DC converters and battery load switches.

For engineers reviewing the DMN1053UCP4 datasheet, DMN1053UCP4 pinout, DMN1053UCP4 application, or DMN1053UCP4 equivalent, key selection criteria include its Chip-Scale Package (X3-DSN0808-4), low thermal resistance (93 °C/W on 1-inch copper), sub-1V gate threshold (0.5 V typ.), and 7.2 nC total gate charge for fast turn-on with minimal drive loss.

Technical Context

This MOSFET employs TR-MOS technology to achieve ultra-low RDS(ON) per unit footprint while maintaining robust switching performance. Its 0.81 mm × 0.81 mm CSP package enables high power density in portable and wearable electronics where board area and height (<0.29 mm) are critical constraints.

The device operates across –55 °C to +150 °C junction temperature range and supports logic-level gate drive down to 1.2 V, with verified body diode recovery (tRR = 6.4 ns typ., QRR = 0.7 nC) suitable for synchronous rectification and bidirectional load control.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS12 V - Enables use in single-cell Li-ion (4.2 V) and dual-cell (8.4 V) battery systems with margin for transients.
RDS(ON) @ 4.5 V38 mΩ typ. - Minimizes conduction loss in high-current paths; yields <150 mW I²R loss at 2 A.
ID Continuous4.0 A @ TA = 25 °C (FR-4, 2 oz Cu + 1″² plate) - Supports sustained load switching in compact PCB layouts.
Qg7.2 nC typ. - Enables fast switching with low gate driver power; reduces transition losses in MHz-range DC-DC topologies.
VGS(TH)0.5 V typ. - Ensures reliable turn-on with 1.8 V or 2.5 V logic outputs without level-shifting circuitry.
tRR6.4 ns typ. - Limits reverse recovery energy in synchronous buck stages, improving efficiency above 1 MHz.
RθJA93 °C/W - Achieved with enhanced thermal pad layout; allows >1 W dissipation in thermally optimized designs.

Pinout & Package

Package: X3-DSN0808-4 Chip-Scale Package (0.81 mm × 0.81 mm, height 0.29 mm), lead-free, halogen- and antimony-free "Green" construction.

Pin/TerminalCircuit RoleDesign Meaning
1 (Source)Source terminal (S)Primary current return path; electrically tied to exposed thermal pad for low-inductance grounding and heat sinking.
2 (Gate)Gate terminal (G)Control input; requires <7.2 nC charge for full turn-on; compatible with 1.2–4.5 V logic drivers.
3 (Drain)Drain terminal (D)Main power output node; connects to switched rail (e.g., VOUT of buck converter or battery side of load switch).
4 (Source)Source terminal (S)Second source connection; paralleled with Pin 1 to reduce package inductance and improve thermal spreading.

Key Features

FeatureDesign Value
TR-MOS TechnologyDelivers industry-leading RDS(ON)/area ratio - 38 mΩ in 0.656 mm² footprint - reducing conduction loss without increasing board area.
Chip-Scale Package (CSP)0.81 mm × 0.81 mm outline with 0.29 mm profile - enables integration into ultra-thin wearables and hearing aids where Z-height is constrained to <0.4 mm.
Low Gate ThresholdVGS(TH) = 0.5 V typ. - Allows direct drive from low-voltage microcontrollers (e.g., ARM Cortex-M0+ at 1.8 V) without external gate biasing.
Ultra-Fast Body DiodetRR = 6.4 ns, QRR = 0.7 nC - Reduces shoot-through risk and EMI in synchronous rectifier applications operating up to 3 MHz.
Thermal PerformanceRθJA = 93 °C/W on 1″² copper - Enables 1.34 W power dissipation without forced air, supporting higher current density in fanless industrial modules.

Applications

Battery Load SwitchPoint-of-Load DC-DC Converter

Use Scenario: Isolating backup battery from main system during sleep mode to prevent leakage current drain.

IC Role / Device Role: Low-side load switch controlling power path between Li-ion cell and PMIC input.

Use Value: 38 mΩ RDS(ON) limits voltage drop to <150 mV at 4 A, preserving battery runtime; 0.5 V VGS(TH) ensures compatibility with 1.8 V enable signals.

Use Scenario: High-frequency synchronous rectifier in 2 MHz buck converter powering FPGA core rails.

IC Role / Device Role: Bottom-side switch in buck topology, handling 3 A continuous output current.

Use Value: 7.2 nC Qg and 6.4 ns tRR minimize switching loss and dead-time penalty, sustaining >94% efficiency at 2 MHz.

USB-C Power Delivery SinkWearable Sensor Hub Power Gating

Use Scenario: Input protection and current limiting for 5 V/3 A USB-C PD sink port.

IC Role / Device Role: Reverse-polarity and overcurrent protected high-side switch (with external driver).

Use Value: 12 V VDSS provides margin against 5.5 V max USB-C VBUS; CSP footprint fits tight connector-side routing.

Use Scenario: Power gating individual sensors (e.g., IMU, HRM) in hearable earbuds to extend battery life.

IC Role / Device Role: Ultra-compact, low-RDS(ON) load switch enabling <1 μA off-state leakage.

Use Value: 0.29 mm height and 0.656 mm² area allow placement directly under sensor ICs; RoHS/Green compliance meets consumer regulatory requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel load switch applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMN10H400L-7RDS(ON) = 4.0 mΩ @ 4.5 V, but larger 1.6 mm × 1.6 mm DFN package and 10 V VDSS.Better for high-current (>6 A), lower-voltage (≤5 V) applications where board area is less constrained.Select when lowest possible conduction loss dominates over size; not suitable for <0.4 mm Z-height designs.
AO3414RDS(ON) = 55 mΩ @ 4.5 V, SO-23 package (2.9 mm × 1.6 mm), 20 V VDSS, higher Qg (12 nC).Preferred for cost-sensitive, non-space-constrained industrial controls requiring wider voltage margin.Choose only if 12 V rating is insufficient and board real estate permits larger footprint.

Compared with DMN10H400L-7 and AO3414, DMN1053UCP4 uniquely balances ultra-small CSP size, sub-1V gate drive, and 38 mΩ RDS(ON) - making it optimal for next-gen wearables and battery-powered IoT nodes where every 0.1 mm² and 0.1 V matters.

Availability

DMN1053UCP4 is available at Aetrix Electronics and suitable for battery management systems, portable medical devices, and USB-C power delivery modules requiring stable component supply and consistent CSP sourcing.

Supply support for DMN1053UCP4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design and manufacturing operations across Asia and the Americas.

The DMN1053UCP4 belongs to Diodes' TR-MOS family - engineered specifically for high-density, low-voltage power management in portable and battery-operated electronics where thermal and spatial constraints dominate.

FAQ

What is the maximum continuous drain current for DMN1053UCP4 at 70°C ambient?

The DMN1053UCP4 supports 3.2 A continuous drain current at TA = +70 °C when mounted on an FR-4 board with a 1-inch square copper plate (Note 6). This derating reflects thermal limitations under realistic PCB conditions, not silicon capability alone.

Does DMN1053UCP4 require a gate resistor for stability in high-speed switching?

A gate resistor is recommended to dampen ringing caused by parasitic inductance in the gate loop. With 1.3 Ω typical gate resistance and 7.2 nC Qg, a 5–10 Ω series resistor typically achieves optimal trade-off between switching speed and EMI suppression in 1–3 MHz DC-DC applications.

Can DMN1053UCP4 be used in high-side load switch configurations?

Yes - but requires a gate driver capable of providing VGS ≥ 4.5 V relative to the source (i.e., bootstrap or charge-pump based). Its 12 V VDSS and 8 A pulsed rating support high-side operation in 5 V systems, though low-side switching is simpler and more common for this part.

Is the X3-DSN0808-4 package compatible with standard reflow profiles for lead-free soldering?

Yes - the DMN1053UCP4's matte tin annealed finish over copper pillar and fully RoHS-compliant construction are qualified for JEDEC J-STD-020D standard lead-free reflow profiles, including peak temperatures up to 260 °C for ≤60 seconds.

DMN1053UCP4-7 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
4-XFBGA, CSPBGA
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
12 V
Current - Continuous Drain (Id) @ 25°C:
2.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
1.2V, 4.5V
Rds On (Max) @ Id, Vgs:
42mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id:
700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
15 nC @ 4.5 V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
908 pF @ 6 V
FET Feature:
-
Power Dissipation (Max):
1.34W
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
X3-DSN0808-4

DMN1053UCP4-7 FAQ

1.How can I place an order for DMN1053UCP4-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN1053UCP4-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN1053UCP4-7 reliable?

The price and inventory of DMN1053UCP4-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN1053UCP4-7 is usually 5 days.

3.What payment methods are accepted for DMN1053UCP4-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN1053UCP4-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN1053UCP4-7?

DMN1053UCP4-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN1053UCP4-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN1053UCP4-7?

For technical support, including DMN1053UCP4-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN1053UCP4-7 requirements.

6.How does Aetrix verify that DMN1053UCP4-7 is sourced from the original manufacturer or authorized distributors?

All DMN1053UCP4-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN1053UCP4-7 meets industry standards.

7.What is the process for return or replacement of DMN1053UCP4-7?

All DMN1053UCP4-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN1053UCP4-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN1053UCP4-7 part is unused and in its original packaging.

Return procedure for DMN1053UCP4-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMN1053UCP4-7 Tags

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