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Diodes Incorporated DMN10H099SFG-13
- Part No.:
- DMN10H099SFG-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerVDFN
- Datasheet:
-
DMN10H099SFG-13.pdf
- Description:
- MOSFET N-CH 100V 4.2A PWRDI3333
- Quantity:
- Payment:
- Shipping:
Inventory:2,174
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Product details
Overview
DMN10H099SFG-13 from Diodes Incorporated is a 100V N-channel enhancement-mode MOSFET in POWERDI3333-8 package, optimized for high-efficiency DC-DC converters. It delivers RDS(on) = 99 mΩ @ VGS = 6.0 V and 80 mΩ @ VGS = 10 V, supports 4.2 A continuous drain current at 25°C, and features AEC-Q101 qualification for automotive-grade reliability.
For engineers reviewing the DMN10H099SFG-13 datasheet, DMN10H099SFG-13 pinout, DMN10H099SFG-13 application, or DMN10H099SFG-13 equivalent, key selection criteria include gate threshold voltage (1.5–3.0 V), thermal resistance (55 °C/W with copper pad), SOA robustness under pulsed loads, and compatibility with 6 V gate drive in space-constrained power stages.
Technical Context
This MOSFET employs planar trench-gate technology to balance low on-resistance and fast switching performance. Its 100 V VDSS rating and ±20 V VGSS support wide-input industrial and automotive power rails, while its 25.2 nC total gate charge (at VGS = 10 V) enables efficient operation in synchronous buck topologies up to 1 MHz.
The device integrates an intrinsic body diode with VSD = 0.77 V at IS = 3.2 A and exhibits controlled reverse recovery behavior (Qgd = 5.9 nC), reducing switching losses and EMI in hard-switched converters. Thermal design leverages the POWERDI3333-8's low RθJA of 55 °C/W when mounted on 1-inch² copper.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100 V - supports input rails up to 48 V nominal with ≥2× safety margin in industrial DC-DC designs |
| RDS(on) | 99 mΩ @ VGS = 6 V - enables use with standard 5 V/6 V microcontroller gate drivers without level-shifting |
| ID (continuous) | 4.2 A @ TA = 25°C - suitable for ≤15 W output stages with moderate heatsinking |
| Qg | 25.2 nC @ VGS = 10 V - determines gate driver current requirement (~2.5 mA avg. at 100 kHz) |
| RθJA | 55 °C/W with 1-inch² copper - defines maximum power dissipation before thermal shutdown in PCB-limited layouts |
| VGS(th) | 1.5–3.0 V - ensures reliable turn-on with logic-level gate signals and low-voltage controllers |
| Ciss | 1172 pF - impacts gate drive loop stability and Miller effect in high-side configurations |
Pinout & Package
Package: POWERDI3333-8 - thermally enhanced surface-mount package with exposed drain paddle, footprint occupies only 33% of SO-8 area, rated for 2.31 W power dissipation with 1-inch² copper pad.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Common source connection; internally paralleled for low-inductance return path and thermal conduction to PCB |
| 5, 6, 7, 8 | Drain (D) | High-current drain terminals tied to exposed paddle; primary heat transfer path to PCB copper |
| Pin 1 (marked) | Gate (G) | Control input; requires <100 nA leakage current handling and stable 6–10 V drive for full enhancement |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) @ 6 V | 99 mΩ enables >92% efficiency in 12 V → 3.3 V/3 A buck converter without gate boosting |
| Thermally optimized package | POWERDI3333-8 reduces junction-to-ambient thermal resistance by 58% vs. SO-8, allowing higher power density |
| AEC-Q101 qualified | Validated for automotive power management including body control modules and infotainment DC-DC supplies |
| Green, halogen-free construction | Meets JESD22-A110 moisture sensitivity Level 1 and RoHS 2011/65/EU requirements |
| Fast switching with low Qgd | 5.9 nC gate-drain charge minimizes Miller plateau duration and improves light-load efficiency |
Applications
| Automotive Body Control Module | Industrial 24 V DC-DC Converter |
|---|---|
Use Scenario: Power distribution switch for LED lighting and window lift actuators in 12 V/24 V vehicle systems. IC Role / Device Role / Timing Role: High-side load switch controlling up to 3.6 A resistive loads with fast turn-off to limit fault energy. Use Value: 99 mΩ RDS(on) limits conduction loss to <1.3 W at 3.6 A, enabling compact thermally unmanaged PCB layout. |
Use Scenario: Synchronous rectifier in isolated flyback or forward converter powering PLC I/O modules. IC Role / Device Role / Timing Role: Secondary-side N-channel MOSFET replacing Schottky diode to reduce conduction loss and improve efficiency above 50% load. Use Value: 80 mΩ RDS(on) at 10 V gate drive cuts secondary-side loss by 65% vs. 40 V/3 A Schottky, raising full-load efficiency from 84% to 89%. |
| USB-C PD Power Delivery Sink | Smart Home Hub Power Management |
Use Scenario: Input protection and OR-ing switch in multi-rail USB-C PD sink designs accepting 5–20 V inputs. IC Role / Device Role / Timing Role: Reverse-polarity and overvoltage protected high-side switch with fast fault response. Use Value: 100 V VDSS withstands 20 V PD transients plus margin; 1.5–3.0 V VGS(th) allows direct MCU control without bias circuitry. |
Use Scenario: Point-of-load regulator for Wi-Fi SoC and sensor subsystems in battery-backed smart home hubs. IC Role / Device Role / Timing Role: Low-quiescent, high-efficiency buck switch operating at 500 kHz–1 MHz with tight thermal constraints. Use Value: 55 °C/W RθJA with minimal copper allows 1.2 W dissipation in 10 mm × 10 mm board area, eliminating need for thermal vias. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3025LSD-13 | 30 V VDSS, 25 mΩ @ 10 V, SOT-23-6 package | Limited to ≤12 V input rails; lower RDS(on) but insufficient voltage margin for 24 V systems | Select only for low-voltage, ultra-compact designs where 30 V rating is sufficient and board area is critical |
| IPB180N10S4-02 | 100 V VDSS, 1.8 mΩ @ 10 V, TO-263 package | Lower RDS(on) but 3× larger footprint and 4× higher gate charge (102 nC); requires external gate driver | Prefer for high-current (>15 A), high-efficiency applications where thermal mass and gate drive capability exist |
Compared with DMN3025LSD-13 and IPB180N10S4-02, DMN10H099SFG-13 uniquely balances 100 V rating, 6 V gate compatibility, and POWERDI3333-8 thermal performance-making it optimal for mid-power automotive and industrial DC-DC stages where space, voltage margin, and gate drive simplicity are jointly constrained.
Availability
DMN10H099SFG-13 is available at Aetrix Electronics and suitable for automotive body control modules, industrial 24 V DC-DC converters, and USB-C PD power delivery sinks requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for DMN10H099SFG-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and consumer markets.
The DMN10H099SFG belongs to Diodes' AEC-Q101-qualified POWERDI® MOSFET product line, engineered specifically for space-constrained, thermally demanding power conversion stages in automotive and industrial environments.
FAQ
What is the maximum continuous drain current at 70°C ambient?
At TA = +70°C, the DMN10H099SFG-13 supports 3.3 A continuous drain current with VGS = 10 V and 2.9 A with VGS = 6.0 V, per the datasheet's steady-state derating curves. This reflects thermal limitation of the POWERDI3333-8 package on standard FR-4 with 2 oz copper.
Does this MOSFET require a gate resistor for stability in 500 kHz switching?
Yes-a 10 Ω gate resistor is recommended to dampen ringing caused by the 1172 pF Ciss interacting with PCB trace inductance. The device's 1.6 Ω intrinsic gate resistance is insufficient alone; external resistance controls dV/dt and prevents spurious turn-on during high dv/dt events.
Can DMN10H099SFG-13 be used in linear regulator applications?
No-it is not characterized or rated for linear mode operation. The Safe Operating Area (SOA) graph shows limited DC capability (≤0.57 W at 70°C), and no SOA data is provided for extended linear use. It is designed exclusively for switching applications with defined pulse durations.
Is the POWERDI3333-8 package lead-free and RoHS-compliant?
Yes-the DMN10H099SFG-13 uses matte tin-plated copper leads and green molding compound, meeting EU RoHS Directive 2011/65/EU and containing <900 ppm bromine, <900 ppm chlorine, and <1000 ppm antimony, satisfying Diodes Incorporated's "Green" definition.
DMN10H099SFG-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 4.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 6V, 10V
- Rds On (Max) @ Id, Vgs:
- 80mOhm @ 3.3A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 25.2 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1172 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 980mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- POWERDI3333-8
DMN10H099SFG-13 FAQ
1.How can I place an order for DMN10H099SFG-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN10H099SFG-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN10H099SFG-13 reliable?
The price and inventory of DMN10H099SFG-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN10H099SFG-13 is usually 5 days.
3.What payment methods are accepted for DMN10H099SFG-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN10H099SFG-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN10H099SFG-13?
DMN10H099SFG-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN10H099SFG-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN10H099SFG-13?
For technical support, including DMN10H099SFG-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN10H099SFG-13 requirements.
6.How does Aetrix verify that DMN10H099SFG-13 is sourced from the original manufacturer or authorized distributors?
All DMN10H099SFG-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN10H099SFG-13 meets industry standards.
7.What is the process for return or replacement of DMN10H099SFG-13?
All DMN10H099SFG-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN10H099SFG-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN10H099SFG-13 part is unused and in its original packaging.
Return procedure for DMN10H099SFG-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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