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Diodes Incorporated DMN10H100SK3-13
- Part No.:
- DMN10H100SK3-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
DMN10H100SK3-13.pdf
- Description:
- MOSFET N-CH 100V 18A TO252
- Quantity:
- Payment:
- Shipping:
Inventory:4,940
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Product details
Overview
DMN10H100SK3 from Diodes Incorporated is a 100V N-channel enhancement-mode MOSFET in TO252 (DPAK) package, rated for 18A continuous drain current at TC = +25°C, with RDS(ON) of 80mΩ @ VGS = 10V and 100mΩ @ VGS = 4.5V. It delivers low conduction loss and fast switching for high-efficiency DC-DC converters and power management circuits.
For engineers reviewing the DMN10H100SK3 datasheet, DMN10H100SK3 pinout, DMN10H100SK3 application, or DMN10H100SK3 equivalent, key selection criteria include its 100V VDSS rating, thermally efficient TO252 package, gate threshold voltage range (1.0–3.0V), avalanche energy rating (32.6mJ), and body diode recovery characteristics (tRR = 19.7ns).
Technical Context
This MOSFET employs planar silicon technology optimized for high-voltage switching with low gate charge (Qg = 25.2nC @ VGS = 10V) and minimized output capacitance (Coss = 40.8pF). Its RDS(ON) exhibits strong temperature stability-normalized to ~1.5× at TJ = 150°C under VGS = 10V-supporting reliable operation in thermally constrained environments.
The device integrates a robust intrinsic body diode with VSD = 0.77V @ IS = 3.2A and Qrr = 15.9nC, enabling synchronous rectification and flyback recovery in non-isolated topologies. Safe Operating Area (SOA) is characterized up to 1μs pulse width with RDS(ON)-limited boundary at TC = 25°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100V - supports input rails up to 80V DC-DC stages with margin against transients |
| RDS(ON) | 80mΩ @ VGS = 10V - enables ≤1.4W conduction loss at 13.2A (ID = 18A × 0.75 derating) |
| ID (TC = +25°C) | 18A - requires heatsink or PCB copper area ≥1-in² 2oz Cu for sustained operation |
| Qg | 25.2nC @ VGS = 10V - determines gate drive power and switching speed in 100–500kHz converters |
| EAS | 32.6mJ - withstands single-pulse inductive energy without failure in hard-switched flyback or buck-boost |
| RθJC | 3.3°C/W - enables direct thermal coupling to heatsink for >24W continuous dissipation at ΔT = 79°C |
| tRR | 19.7ns - minimizes reverse recovery losses during high-frequency synchronous rectification |
Pinout & Package
Package: TO252 (DPAK), surface-mount, thermally enhanced plastic case with exposed drain pad. Dimensions per AP02001: D = 6.10mm, E = 6.58mm, H = 9.91mm, L = 1.59mm, b3 = 5.33mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal (S) | Low-side reference node; connects to ground or low-side switch node; carries full load current |
| Pin 2 (Gate) | Control input (G) | High-impedance MOS gate requiring <25.2nC charge for full turn-on; sensitive to ESD |
| Pin 3 (Drain) | Power output (D) | Exposed metal pad on underside - electrically and thermally connected to drain; must be soldered to large copper pour |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) @ 4.5V | 100mΩ - enables 3.3V/5V logic-level gate drive without external level-shifting in compact converters |
| Thermally optimized TO252 | RθJC = 3.3°C/W - allows >24W power handling with minimal heatsink, reducing board space vs. TO220 |
| Robust avalanche capability | EAS = 32.6mJ - eliminates need for external snubbers in inductive load switching applications |
| Green packaging | Halogen- and antimony-free, RoHS-compliant - meets IPC-1752A material declaration requirements |
Applications
| Server VRMs | Industrial Motor Drives |
|---|---|
Use Scenario: High-current, multi-phase buck converters supplying CPU/GPU core voltage (0.8–1.2V @ up to 200A). IC Role / Device Role / Timing Role: Synchronous rectifier in low-side position; switched at 300–600kHz with precise dead-time control. Use Value: 80mΩ RDS(ON) and 19.7ns tRR reduce conduction and recovery losses, improving efficiency by ≥0.8% over comparable 100V MOSFETs. | Use Scenario: Half-bridge inverters driving 24–48V BLDC motors in factory automation actuators. IC Role / Device Role / Timing Role: High-side or low-side switch in 3-phase bridge; operated with 10–20kHz PWM and active freewheeling. Use Value: 100V VDSS and 32.6mJ EAS tolerate back-EMF spikes and bus transients without clamping diodes. |
| Telecom DC-DC Modules | Automotive Body Control Units |
Use Scenario: Isolated forward or active-clamp forward converters converting -48V telecom supply to 3.3V/5V system rails. IC Role / Device Role / Timing Role: Primary-side switch operating at 200–300kHz with ZVS-assisted turn-on. Use Value: Low Coss (40.8pF) and Crss (31.3pF) minimize capacitive losses and improve ZVS window reliability. | Use Scenario: Load switching for solenoids, relays, and LED lighting in 12V/24V automotive subsystems. IC Role / Device Role / Timing Role: High-side load switch controlled via microcontroller GPIO with integrated protection. Use Value: 100V rating provides 4× margin over 24V nominal systems, supporting load-dump transient immunity per ISO 7637-2. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP10NK100ZFP | TO220 package, higher RDS(ON) = 120mΩ @ 10V, lower ID = 10A, no specified tRR or Qrr | Requires larger heatsink; unsuitable for high-density layouts or synchronous rectification | Select when mechanical mounting constraints favor through-hole or when lower cost outweighs thermal density needs |
| IRF540NPBF | TO220, 100V, RDS(ON) = 44mΩ @ 10V but only rated for 33A pulsed; no EAS spec; higher Qg = 71nC | Higher gate drive power demand; lacks avalanche ruggedness for inductive loads | Prefer only in low-frequency, non-inductive switching where peak current dominates over thermal limits |
Compared with STP10NK100ZFP and IRF540NPBF, DMN10H100SK3 offers superior thermal density (TO252), verified avalanche energy (32.6mJ), and body diode performance (tRR = 19.7ns, Qrr = 15.9nC), making it optimal for compact, high-reliability DC-DC and motor drive designs.
Availability
DMN10H100SK3 is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, and telecom DC-DC modules requiring stable component supply, consistent parametric performance, and long-term manufacturing continuity.
Supply support for DMN10H100SK3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal solutions, with design centers across Asia, Europe, and the US, serving industrial, computing, and communications markets.
This MOSFET belongs to Diodes' PowerMOS™ portfolio, engineered for high-efficiency power conversion in space-constrained applications where thermal performance, avalanche ruggedness, and gate-drive compatibility are critical.
FAQ
What is the maximum safe operating junction temperature for DMN10H100SK3?
The absolute maximum junction temperature is +150°C, and the device is characterized across –55°C to +150°C. Derating begins above +25°C ambient, with RDS(ON) increasing ~1.5× at 150°C. Thermal design must ensure TJ remains below 150°C under worst-case power dissipation and ambient conditions.
Can DMN10H100SK3 be used as a high-side switch with 12V gate drive?
Yes - its VGS(TH) range (1.0–3.0V) and RDS(ON) of 80mΩ @ VGS = 10V make it fully enhancement-mode compatible with standard 12V logic-level drivers. Gate-source voltage must not exceed ±20V, and external gate resistors should limit dV/dt to avoid spurious turn-on.
Does DMN10H100SK3 require a gate driver IC in 300kHz DC-DC applications?
A dedicated gate driver is recommended: its 25.2nC total gate charge demands ≥1A peak drive current to achieve sub-10ns rise/fall times. Without a driver, RC time constants from MCU GPIO may cause excessive switching losses and thermal stress at 300kHz.
Is the TO252 package lead-free and RoHS-compliant?
Yes - DMN10H100SK3 is fully RoHS-compliant per EU Directive 2011/65/EU, with matte tin annealed terminals over copper leadframe, zero intentionally added lead, and halogen/antimony-free molding compound meeting <900ppm Br, <900ppm Cl, and <1000ppm Sb thresholds.
DMN10H100SK3-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 80mOhm @ 3.3A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 25.2 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1172 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 37W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252-3
DMN10H100SK3-13 FAQ
1.How can I place an order for DMN10H100SK3-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN10H100SK3-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN10H100SK3-13 reliable?
The price and inventory of DMN10H100SK3-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN10H100SK3-13 is usually 5 days.
3.What payment methods are accepted for DMN10H100SK3-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN10H100SK3-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN10H100SK3-13?
DMN10H100SK3-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN10H100SK3-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN10H100SK3-13?
For technical support, including DMN10H100SK3-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN10H100SK3-13 requirements.
6.How does Aetrix verify that DMN10H100SK3-13 is sourced from the original manufacturer or authorized distributors?
All DMN10H100SK3-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN10H100SK3-13 meets industry standards.
7.What is the process for return or replacement of DMN10H100SK3-13?
All DMN10H100SK3-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN10H100SK3-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN10H100SK3-13 part is unused and in its original packaging.
Return procedure for DMN10H100SK3-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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