Diodes Incorporated DMN10H120SFG-13

Overview

DMN10H120SFG-13 from Diodes Incorporated is a 100V N-channel enhancement-mode MOSFET in POWERDI3333-8 package, featuring R_DS(on) = 110 mΩ @ V_GS = 10 V, I_D = 3.8 A (T_A = +25°C), and qualified to AEC-Q101 for automotive-grade reliability-used in DC-DC converters for power management in compact industrial and automotive control modules.

For engineers reviewing the DMN10H120SFG-13 datasheet, DMN10H120SFG-13 pinout, DMN10H120SFG-13 application, or DMN10H120SFG-13 equivalent, key selection criteria include its low R_DS(on) at 6 V gate drive, thermally efficient 33% board-area footprint vs SO-8, and validated junction-to-ambient thermal resistance of 52 °C/W under enhanced pad layout.

Technical Context

This MOSFET employs planar silicon process with optimized channel geometry to achieve low on-resistance while maintaining fast switching performance: t_D(on) = 3.8 ns, t_D(off) = 11.5 ns, and Q_g = 10.6 nC @ V_GS = 10 V. Its gate threshold voltage (V_GS(th) = 1.5–3.0 V) supports robust 3.3 V and 5 V logic-level drive compatibility.

The device integrates an intrinsic body diode with V_SD = 0.78 V @ I_S = 3.2 A and exhibits C_iss = 549 pF, C_oss = 41.1 pF, and Crss = 19.0 pF at V_DS = 50 V-enabling predictable hard-switching behavior in synchronous buck topologies.

Key Specifications

Pinout & Package

Package: POWERDI3333-8 - surface-mount, thermally enhanced plastic package with exposed drain paddle; 3.3 mm × 3.3 mm footprint, 0.8 mm nominal height, UL 94V-0 rated molding compound.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V MOSFET applications.

Compared with DMN3026LSD-13 and IPB180N10N3 G, DMN10H120SFG-13 uniquely balances 100 V rating, 110 mΩ on-resistance, and minimal 3.3 mm × 3.3 mm footprint-making it optimal for space-constrained 48 V power conversion where thermal performance must exceed SO-8 limits without TO-263 complexity.

Availability

DMN10H120SFG-13 is available at Aetrix Electronics and suitable for automotive body electronics, industrial DC-DC converters, and USB-C PD adapters requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for DMN10H120SFG-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection devices for automotive, industrial, and consumer markets.

This MOSFET belongs to Diodes' AEC-Q101-qualified POWERDI® portfolio, engineered specifically for space- and thermally constrained power switches in automotive and industrial power conversion where SO-8 footprint limitations impede thermal performance.

FAQ

What is the maximum continuous drain current at 70°C ambient?

At T_A = +70°C, the DMN10H120SFG-13 supports 3.0 A continuous drain current with V_GS = 10 V, based on its 0.6 W power dissipation limit and 131 °C/W junction-to-ambient thermal resistance under standard FR-4 mounting. This rating assumes no additional copper pour beyond minimum pad layout.

Does this MOSFET require a gate resistor for 3.3 V microcontroller drive?

No external gate resistor is required for basic turn-on with 3.3 V GPIO, as V_GS(th) starts at 1.5 V and full enhancement occurs at ~4.5 V. However, a 10 Ω series resistor is recommended to dampen ringing caused by L_g–C_iss resonance during fast edge transitions in high-frequency switching.

How does the POWERDI3333-8 package improve thermal performance over SO-8?

The POWERDI3333-8 exposes the drain paddle directly to the PCB, achieving R_θJA = 52 °C/W with 1-inch² copper-versus ~62 °C/W for SO-8 under identical conditions. Its 33% smaller footprint also reduces parasitic inductance, improving EMI and transient response in high-speed switching.

Is the body diode suitable for reverse-current blocking in OR-ing applications?

Yes-the intrinsic body diode has V_SD = 0.78 V @ 3.2 A and exhibits soft reverse recovery (Crss = 19.0 pF), making it suitable for low-loss OR-ing in dual-supply systems. For bidirectional blocking, an external Schottky or ideal diode controller is still required since the MOSFET conducts in both directions when V_GS > V_GS(th).