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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMN10H170SFDE-13

Name: DMN10H170SFDE-13
Brand: Diodes Incorporated
SKU: DMN10H170SFDE-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN10H170SFDE-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 6-PowerUDFN

Datasheet:: DMN10H170SFDE-13.pdf

Description:: MOSFET N-CH 100V 2.9A 6UDFN

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Product details

Overview

DMN10H170SFDE-13 from Diodes Incorporated is a 100V N-channel enhancement-mode MOSFET in U-DFN2020-6 (Type E) package, featuring 160 mΩ R_DS(ON) at V_GS = 10 V, 2.9 A continuous drain current at T_A = +25°C, and 0.6 mm profile. It delivers low on-resistance with robust switching performance for compact power management circuits.

For engineers reviewing the DMN10H170SFDE-13 datasheet, DMN10H170SFDE-13 pinout, DMN10H170SFDE-13 application, or DMN10H170SFDE-13 equivalent, key selection criteria include its 100V BVDSS rating, 4.9 nC gate charge at V_GS = 4.5 V, 1167 pF input capacitance, thermal resistance of 61 °C/W (with copper pad), and compatibility with battery-operated load-switching topologies.

Technical Context

This MOSFET employs a trench-gate process to achieve low R_DS(ON) while maintaining fast switching characteristics: t_D(ON) = 10.5 ns, t_R = 11.1 ns, and Q_gd = 2.0 nC. Its body diode exhibits V_SD = 0.9 V at I_S = 10 A and t_RR = 30.3 ns under specified di/dt conditions.

The device operates across –55°C to +150°C junction temperature range and supports pulsed drain currents up to 10 A (10 µs, 1% duty). Its SOA curve confirms safe operation up to 100 V and 1 A in DC mode with T_J(max) = 150°C and R_θJA = 61 °C/W on optimized PCB layout.

Key Specifications

Parameter	Value and Actual Design Meaning
BVDSS	100 V - Withstands up to 100 V drain-source voltage before avalanche conduction begins; suitable for 48 V system rails with margin.
RDS(ON)	160 mΩ @ VGS = 10 V - Enables <160 mW conduction loss at 1 A, critical for thermally constrained portable designs.
ID (Continuous)	2.9 A @ TA = +25°C - Sustains 2.9 A steady-state current with standard FR-4 board and 2 oz copper; derates to 2.3 A at +70°C ambient.
Qg	9.7 nC @ VGS = 10 V - Determines gate drive energy requirement; enables efficient switching with low-power drivers in space-constrained layouts.
Ciss	1167 pF @ VDS = 25 V - Impacts high-frequency gate drive impedance and EMI behavior; requires careful PCB routing to minimize ringing.
RθJA	61 °C/W - Achieved with 1-inch² copper pad; defines thermal rise per watt dissipated, guiding heatsinking decisions in sealed enclosures.
VGS(TH)	1.0–3.0 V - Ensures reliable turn-on with 3.3 V logic-level gate drives; avoids partial enhancement in low-voltage control systems.

Pinout & Package

Package: U-DFN2020-6 (Type E), 2.0 mm × 2.0 mm × 0.6 mm, lead-free, halogen-free, RoHS-compliant molded plastic case with NiPdAu-plated terminals.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Source terminal (S)	Primary current return path; internally connected to exposed thermal pad for enhanced heat transfer to PCB.
2 (Gate)	Gate terminal (G)	Controls channel conduction; requires ≤±20 V drive; low 1.3 Ω gate resistance minimizes driver losses.
3 (Drain)	Drain terminal (D)	High-side or low-side power path connection; rated for 100 V blocking and 10 A pulsed current.
4 (Source)	Source terminal (S)	Second source connection; electrically tied to Pin 1 and thermal pad to reduce source inductance and improve stability.
5 (Drain)	Drain terminal (D)	Second drain connection; parallel routing reduces trace resistance and improves current sharing in high-current paths.
6 (Drain)	Drain terminal (D)	Third drain connection; provides additional current-carrying capacity and lowers overall package inductance.

Key Features

Feature	Design Value
Ultra-low profile (0.6 mm)	Enables integration into height-sensitive applications such as wearables and ultra-thin power modules without mechanical interference.
PCB footprint: 4 mm²	Reduces board area by >50% vs. SO-8 or TSOP-6 packages, supporting miniaturized battery management and LED driver PCBs.
Low RDS(ON) with fast switching	Combines 160 mΩ on-resistance and 10.5 ns turn-on delay to achieve high efficiency (>92%) in 1 MHz synchronous buck converters.
Thermally enhanced U-DFN2020-6 (Type E)	Exposes source-connected thermal pad and uses three drain pins to lower RθJA to 61 °C/W-critical for fanless industrial sensors.
RoHS, Halogen- & Antimony-Free	Meets automotive and medical regulatory requirements (Br+Cl <1500 ppm, Sb <1000 ppm); eliminates corrosion risk in humid environments.

Applications

Battery-Powered Load Switching

Low-Voltage Relay/Solenoid Driver

Use Scenario: Power gating for Bluetooth LE modules and sensor nodes in IoT edge devices operating from single-cell Li-ion (2.8–4.2 V).

IC Role / Device Role / Timing Role: Low-side switch controlling VDD rail to subsystems; activated/deactivated via 3.3 V GPIO with <100 ns timing margin.

Use Value: 160 mΩ R_DS(ON) limits dropout to <420 mV at 2.6 A, preserving battery runtime; 0.6 mm height avoids interference with stacked PCB assemblies.

Use Scenario: Driving 12 V/200 mA electromechanical relays in smart home controllers powered by USB-C PD sources.

IC Role / Device Role / Timing Role: High-side or low-side driver interfacing microcontroller GPIO to relay coil; handles inductive kickback via integrated body diode.

Use Value: 100 V BVDSS withstands >60 V flyback transients; 30.3 ns reverse recovery time ensures clean turn-off without relay chatter or contact arcing.

LED Backlight Dimming Circuit

Portable Display Power Sequencing

Use Scenario: PWM-controlled current sink for white LED strings in handheld medical displays requiring flicker-free dimming down to 0.1% duty cycle.

IC Role / Device Role / Timing Role: Synchronous rectifier in constant-current buck stage; switched at 1–2 MHz with precise gate timing.

Use Value: 9.7 nC total gate charge enables full turn-on within 30 ns using 330 Ω gate resistor; 1167 pF Ciss maintains stable loop response at high frequency.

Use Scenario: Controlled power-up sequencing of display interface ICs (e.g., MIPI DSI receivers) in ruggedized tablets with dual-battery backup.

IC Role / Device Role / Timing Role: Standby power switch isolating auxiliary rails during deep-sleep mode; controlled by PMIC enable signal.

Use Value: 2.9 A continuous rating supports peak inrush of display bias supplies; –55°C to +150°C rating ensures reliability in outdoor thermal cycling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3020LFG-7	30 V BVDSS, 20 mΩ R_DS(ON) @ 10 V, 6.5 A ID - lower voltage, higher current, larger U-DFN2020-6 footprint (same package outline but different internal layout).	Not suitable for 48 V bus applications; limited to ≤30 V systems like USB PD accessories or low-voltage motor drivers.	Select when primary need is ultra-low R_DS(ON) below 30 V and thermal budget allows higher conduction loss at elevated voltage.
DMN2053UVT-7	20 V BVDSS, 14.5 mΩ R_DS(ON) @ 4.5 V, 4.5 A ID - logic-level optimized, smaller die, lower Qg (4.2 nC), same U-DFN2020-6 package.	Designed for 5 V/3.3 V logic-driven loads only; cannot replace in 12–48 V supply rails due to BVDSS limitation.	Prefer for battery-powered microcontrollers driving LEDs or small solenoids where gate drive voltage is ≤4.5 V and voltage stress is <20 V.

Compared with DMN3020LFG-7 and DMN2053UVT-7, the DMN10H170SFDE-13 uniquely balances 100 V capability with sub-200 mΩ on-resistance in a 2×2 mm footprint-making it the only viable option among the three for compact, medium-voltage (e.g., 24–48 V) portable power switches requiring thermal headroom and avalanche robustness.

Availability

DMN10H170SFDE-13 is available at Aetrix Electronics and suitable for battery-operated systems, solid-state relay replacements, and low-profile LED driver modules requiring stable component supply across extended production lifecycles.

Supply support for DMN10H170SFDE-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

This MOSFET belongs to Diodes' "PowerMOS" product line, engineered specifically for high-efficiency, space-constrained power switching in portable and industrial equipment-emphasizing low R_DS(ON), fast switching, and robust thermal performance in miniature packages.

FAQ

What is the maximum gate-source voltage rating for DMN10H170SFDE-13?

The absolute maximum gate-source voltage (V_GSS) is ±20 V. Exceeding this risks permanent gate oxide damage. For reliable operation, gate drive should be clamped to ≤12 V in 3.3 V logic systems and ≤15 V in 5 V systems, especially during transient events or hot-plug conditions.

Does DMN10H170SFDE-13 have an integrated Schottky body diode?

No-it features a standard parasitic body diode inherent to vertical N-channel MOSFET structure. Its forward voltage is 0.9 V at 10 A and reverse recovery time is 30.3 ns. It is not a Schottky or trench-Schottky device; no separate Schottky junction is fabricated.

Can DMN10H170SFDE-13 be used in high-frequency switching applications above 1 MHz?

Yes-its 10.5 ns turn-on delay, 11.1 ns rise time, and 9.7 nC total gate charge support reliable operation up to 2 MHz in buck converters. However, PCB layout must minimize gate loop inductance and use tight gate-source routing to avoid oscillation.

Is the thermal pad on the bottom of DMN10H170SFDE-13 electrically connected?

Yes-the exposed thermal pad is internally connected to the source (S) terminals (Pins 1, 4). It must be soldered to a dedicated PCB copper pour tied to the source net to achieve the specified R_θJA = 61 °C/W and ensure mechanical reliability.

DMN10H170SFDE-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 6-PowerUDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 2.9A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 160mOhm @ 5A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 9.7 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1167 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 660mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: U-DFN2020-6 (Type E)

DMN10H170SFDE-13 FAQ

1.How can I place an order for DMN10H170SFDE-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN10H170SFDE-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN10H170SFDE-13 reliable?

The price and inventory of DMN10H170SFDE-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN10H170SFDE-13 is usually 5 days.

3.What payment methods are accepted for DMN10H170SFDE-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN10H170SFDE-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN10H170SFDE-13?

DMN10H170SFDE-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN10H170SFDE-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN10H170SFDE-13?

For technical support, including DMN10H170SFDE-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN10H170SFDE-13 requirements.

6.How does Aetrix verify that DMN10H170SFDE-13 is sourced from the original manufacturer or authorized distributors?

All DMN10H170SFDE-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN10H170SFDE-13 meets industry standards.

7.What is the process for return or replacement of DMN10H170SFDE-13?

All DMN10H170SFDE-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN10H170SFDE-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN10H170SFDE-13 part is unused and in its original packaging.

Return procedure for DMN10H170SFDE-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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