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Diodes Incorporated DMN10H170SFDE-7
- Part No.:
- DMN10H170SFDE-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 6-PowerUDFN
- Datasheet:
-
DMN10H170SFDE-7.pdf
- Description:
- MOSFET N-CH 100V 2.9A 6UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:2,853
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Product details
Overview
DMN10H170SFDE-7 from Diodes Incorporated is a 100V N-channel enhancement-mode MOSFET in U-DFN2020-6 (Type E) package, with RDS(ON) = 160 mΩ @ VGS = 10 V, ID = 2.9 A at TA = +25°C, and 0.6 mm profile. It delivers low on-resistance and fast switching for compact, high-efficiency power management in space-constrained battery-operated systems.
For engineers reviewing the DMN10H170SFDE-7 datasheet, DMN10H170SFDE-7 pinout, DMN10H170SFDE-7 application, or DMN10H170SFDE-7 equivalent, key selection criteria include its 100V VDSS, 160 mΩ RDS(ON) at 10 V gate drive, 2.9 A continuous drain current, U-DFN2020-6 thermal performance (RθJA = 61 °C/W with copper pad), and suitability for solid-state relay and load-switching functions.
Technical Context
This MOSFET uses planar trench-gate technology to balance low RDS(ON) and controlled gate charge (Qg = 9.7 nC @ VGS = 10 V). Its body diode exhibits VSD = 0.9 V @ IS = 10 A and tRR = 30.3 ns, supporting moderate-frequency synchronous or freewheeling operation.
Thermal design is enabled by its 9.3 °C/W RθJC and dual thermal ratings: 0.66 W (standard PCB) and 2.03 W (with 1-inch² copper pad). The device operates across –55°C to +150°C junction temperature and supports avalanche energy of 16 mJ (IAS = 4.7 A).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100 V - Withstands up to 100 V drain-source blocking voltage, suitable for 48 V industrial bus and 24 V automotive auxiliary rails. |
| RDS(ON) | 160 mΩ @ VGS = 10 V - Enables ≤0.47 W conduction loss at 2.9 A, critical for thermally limited U-DFN2020-6 footprint. |
| ID (continuous) | 2.9 A @ TA = +25°C - Rated for sustained load switching in portable power stages without forced cooling. |
| Qg | 9.7 nC @ VGS = 10 V - Supports efficient 100–500 kHz PWM drive with minimal gate driver power overhead. |
| RθJA | 61 °C/W (with 1″² copper) - Allows ~1.3 W dissipation before reaching 150°C junction under typical layout conditions. |
| tRR | 30.3 ns - Limits reverse recovery loss in inductive switching, enabling clean turn-off in relay/solenoid drivers. |
Pinout & Package
Package: U-DFN2020-6 (Type E), 2.0 × 2.0 × 0.6 mm, bottom-exposed thermal pad, NiPdAu-plated terminals, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Source) | Source terminal (S) | Primary current return path; tied to PCB ground plane for thermal and EMI control. |
| 2 (Gate) | Gate terminal (G) | High-impedance control input; requires <10 Ω series resistance to damp ringing due to Rg = 1.3 Ω. |
| 3 (Drain) | Drain terminal (D) | High-side or low-side power switch node; connects to load or supply rail. |
| 4 (Source) | Source terminal (S) | Second source connection for improved current sharing and thermal spreading. |
| 5 (Drain) | Drain terminal (D) | Second drain connection to reduce package inductance in high-di/dt applications. |
| 6 (Thermal Pad) | Exposed thermal pad | Internally connected to source; must be soldered to large copper area for RθJA = 61 °C/W performance. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low profile | 0.6 mm height enables use in slim battery packs and wearables where Z-axis clearance is ≤0.7 mm. |
| Small PCB footprint | 4 mm² area (2.0 × 2.0 mm) reduces board cost and supports dense multi-MOSFET arrays in PMIC modules. |
| Low RDS(ON) at 4.5 V | 200 mΩ @ VGS = 4.5 V allows direct logic-level drive from 3.3 V/5 V microcontrollers without level-shifting. |
| Halogen- and antimony-free | <900 ppm Br, <900 ppm Cl, <1000 ppm Sb - Meets IPC-1752A Class 3 material declaration requirements. |
| RoHS 3 compliant | Fully compliant with EU Directive 2015/863/EU - no intentionally added lead, cadmium, mercury, hexavalent chromium, PBB, PBDE, or phthalates. |
Applications
| Battery-Powered Portable Devices | Solid-State Relay Modules |
|---|---|
|
Use Scenario: Load switching in handheld medical monitors, barcode scanners, and IoT sensors powered by single-cell Li-ion (3.0–4.2 V) or dual-cell alkaline packs. IC Role / Device Role / Timing Role: Low-side power switch controlling display backlight, motor actuator, or sensor bias rail. Use Value: 200 mΩ RDS(ON) at 4.5 V gate drive minimizes dropout and extends runtime; 0.6 mm profile fits under compact enclosures. |
Use Scenario: Replacing electromechanical relays in HVAC controllers, PLC I/O modules, and smart home hubs requiring silent, bounce-free switching. IC Role / Device Role / Timing Role: High-voltage (≤100 V) AC/DC load switch with integrated body diode for snubbing inductive kickback. Use Value: 16 mJ avalanche rating handles inductive energy without external clamping; 30.3 ns tRR ensures clean commutation at 100 Hz–1 kHz. |
| LED Driver Power Stages | Industrial Solenoid & Valve Drivers |
|
Use Scenario: Constant-current LED string control in emergency lighting, signage, and machine vision illumination systems operating from 12–48 V DC rails. IC Role / Device Role / Timing Role: PWM-controlled high-side or low-side current sink in buck or linear LED driver topologies. Use Value: 100 V VDSS supports 48 V bus with margin; 9.7 nC Qg enables efficient 1–5 kHz dimming without gate driver overheating. |
Use Scenario: Driving 24 V DC solenoids, pneumatic valves, and latching mechanisms in factory automation and fluid control equipment. IC Role / Device Role / Timing Role: Fast-turning power switch interfacing with microcontroller GPIOs via optocoupler-isolated gate drive. Use Value: 4.7 A IAS and 16 mJ EAS safely absorb inductive flyback energy during de-energization without snubber networks. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2004LK-7 | RDS(ON) = 45 mΩ @ 4.5 V but VDSS = 20 V - lower voltage rating limits use to ≤12 V systems. | Not suitable for 48 V bus or 100 V relay loads; better for USB-C PD or low-voltage motor control. | Select when system VDD ≤ 12 V and ultra-low RDS(ON) is prioritized over voltage headroom. |
| DMN3029LFG-7 | RDS(ON) = 29 mΩ @ 4.5 V, VDSS = 30 V, SO-8 package - larger footprint and higher RθJA (70 °C/W). | Requires more board area and heatsinking; unsuitable for ultra-thin designs where 0.6 mm height is mandatory. | Choose only if higher current (4.5 A) and legacy SO-8 assembly compatibility outweigh size constraints. |
Compared with DMN2004LK-7 and DMN3029LFG-7, DMN10H170SFDE-7 uniquely balances 100 V capability, 200 mΩ logic-level RDS(ON), and 0.6 mm height-making it the only option for space-constrained 24–48 V industrial switching where both voltage margin and profile are non-negotiable.
Availability
DMN10H170SFDE-7 is available at Aetrix Electronics and suitable for battery-operated portable devices, solid-state relay modules, and industrial solenoid drivers requiring stable component supply and long-term production continuity.
Supply support for DMN10H170SFDE-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
This MOSFET belongs to Diodes' "PowerMOS" product line, engineered specifically for high-efficiency, space-constrained DC power switching in consumer, industrial, and computing applications where low RDS(ON), small footprint, and robust thermal performance are essential.
FAQ
What is the maximum continuous drain current at 70°C ambient?
At TA = +70°C with standard FR-4 PCB (2 oz copper, minimum pad), the continuous drain current is 2.3 A. With enhanced thermal layout (1-inch² copper pad), it rises to 2.7 A. These values derive directly from the datasheet's derating curves and are validated under pulsed and steady-state test conditions per Note 6.
Is the exposed thermal pad electrically connected, and how should it be handled?
Yes, the exposed thermal pad (Pin 6) is internally connected to the source terminal. It must be soldered to a dedicated PCB copper pour tied to the system ground plane. Omitting this connection increases RθJA from 61 °C/W to 189 °C/W, risking thermal shutdown at >0.3 W dissipation.
Can DMN10H170SFDE-7 be used in automotive applications?
This part is not AEC-Q101 qualified. While Diodes offers automotive-grade variants in the same U-DFN2020-6 footprint (e.g., DMN10H170SFDEQ-7), the -7 suffix denotes standard commercial qualification. For automotive use, contact Diodes' automotive team for PPAP-capable, IATF 16949-manufactured alternatives.
What is the gate threshold voltage range, and how does it affect logic-level drive?
VGS(TH) is specified from 1.0 V to 3.0 V (min–max), with typical value 2.0 V. At VGS = 4.5 V, it fully enhances to deliver 2.6 A with RDS(ON) = 200 mΩ - confirming reliable operation with 3.3 V or 5 V GPIOs without external level shifters.
DMN10H170SFDE-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-PowerUDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 160mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 9.7 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1167 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 660mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type E)
DMN10H170SFDE-7 FAQ
1.How can I place an order for DMN10H170SFDE-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN10H170SFDE-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN10H170SFDE-7 reliable?
The price and inventory of DMN10H170SFDE-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN10H170SFDE-7 is usually 5 days.
3.What payment methods are accepted for DMN10H170SFDE-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN10H170SFDE-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN10H170SFDE-7?
DMN10H170SFDE-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN10H170SFDE-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN10H170SFDE-7?
For technical support, including DMN10H170SFDE-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN10H170SFDE-7 requirements.
6.How does Aetrix verify that DMN10H170SFDE-7 is sourced from the original manufacturer or authorized distributors?
All DMN10H170SFDE-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN10H170SFDE-7 meets industry standards.
7.What is the process for return or replacement of DMN10H170SFDE-7?
All DMN10H170SFDE-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN10H170SFDE-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN10H170SFDE-7 part is unused and in its original packaging.
Return procedure for DMN10H170SFDE-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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