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Diodes Incorporated DMN10H170SFGQ-7
- Part No.:
- DMN10H170SFGQ-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerVDFN
- Datasheet:
-
DMN10H170SFGQ-7.pdf
- Description:
- MOSFET N-CH 100V PWRDI3333
- Quantity:
- Payment:
- Shipping:
Inventory:9,271
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Product details
Overview
DMN10H170SFGQ-7 from Diodes Incorporated is an AEC-Q101-qualified N-channel enhancement-mode MOSFET in PowerDI3333-8 package, rated for 100V VDSS, 122 mΩ RDS(ON) @ VGS = 10 V, and 2.9 A continuous drain current at TA = +25°C. It delivers robust unclamped inductive switching performance (EAS = 20 mJ) and supports automotive motor control and DC-DC converter applications requiring high reliability and thermal efficiency.
For engineers reviewing the DMN10H170SFGQ-7 datasheet, DMN10H170SFGQ-7 pinout, DMN10H170SFGQ-7 application, or DMN10H170SFGQ-7 equivalent, key selection criteria include its AEC-Q101 qualification, low RDS(ON) at 4.5 V gate drive (133 mΩ), 100% production-tested UIS capability, thermally optimized PowerDI3333-8 footprint, and PPAP support for automotive supply chain compliance.
Technical Context
This MOSFET employs a trench-gate silicon process optimized for low gate charge (Qg = 14.9 nC @ VGS = 10 V) and fast switching (tF = 3.4 ns), enabling high-efficiency synchronous rectification and PWM-driven power stages. Its RDS(ON) remains stable across -55°C to +150°C junction temperature, with normalized on-resistance variation ≤1.5× over full range.
The device integrates a body diode with low forward voltage (VSD = 0.7 V typ @ IS = 3.3 A) and controlled reverse recovery (QRR = 19.7 nC, tRR = 22.4 ns), reducing switching losses and EMI in bidirectional energy transfer circuits such as buck-boost converters and H-bridge motor drivers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100 V - Withstands up to 100 V drain-source blocking voltage, suitable for 48 V automotive bus and industrial 24–48 V systems. |
| RDS(ON) @ 10 V | 122 mΩ max - Ensures <150 mW conduction loss at 2.9 A, critical for thermally constrained PCB layouts. |
| RDS(ON) @ 4.5 V | 133 mΩ max - Enables logic-level gate drive compatibility with 3.3 V/5 V microcontrollers without level-shifting. |
| EAS | 20 mJ - 100% production-tested unclamped inductive switching energy, guarantees ruggedness in motor flyback and relay driving. |
| Qg | 14.9 nC @ VGS = 10 V - Low total gate charge reduces driver power demand and enables >500 kHz switching in compact DC-DC designs. |
| RθJA (2 oz Cu) | 60 °C/W - Achieved with 1-inch² copper pad; allows 2.0 W steady-state dissipation at TA = +25°C without heatsink. |
| AEC-Q101 | Qualified - Meets stress test requirements for automotive electronics including HTGB, HTRB, and temperature cycling. |
Pinout & Package
Package: PowerDI3333-8 - Thermally enhanced 8-pin surface-mount package with exposed drain paddle, occupying only 33% board area of SO-8 and delivering 7.0 °C/W RθJC.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Drain (D) | Four parallel drain terminals connected to internal die drain metallization and exposed paddle - primary heat path and high-current output node. |
| 5 | Source (S) | Main source connection - used for low-side switch return path and current sensing reference point. |
| 6, 7, 8 | Source (S) | Three additional source terminals - reduce source inductance and improve current sharing in high-di/dt switching. |
| - | Gate (G) | Terminal not assigned to discrete pin; gate bond wire connects internally to pin 5 (source) via dedicated gate pad - requires external gate routing to pin 5. |
Key Features
| Feature | Design Value |
|---|---|
| 100% UIS production test | Guarantees minimum 20 mJ avalanche energy handling per unit - eliminates field failure risk in inductive load switching. |
| Low RDS(ON) @ 4.5 V | 133 mΩ max enables direct interface with 3.3 V/5 V logic outputs - removes need for gate driver ICs in cost-sensitive modules. |
| PowerDI3333-8 thermal design | 7.0 °C/W RθJC and 60 °C/W RθJA (with 1″² Cu) - supports 2.0 W continuous operation without heatsink in space-constrained automotive ECUs. |
| AEC-Q101 + PPAP support | Full automotive qualification with documented PPAP documentation package - satisfies Tier-1 supplier requirements for serial production. |
| Green, halogen-free construction | <900 ppm Br, <900 ppm Cl, <1000 ppm Sb - meets global environmental regulations including RoHS 3 and OEM-specific "green" material mandates. |
Applications
| Automotive Body Control Module (BCM) | 48 V Mild Hybrid DC-DC Converter |
|---|---|
|
Use Scenario: Driving solenoids, relays, and LED arrays in door modules, lighting controls, and HVAC actuators. IC Role / Device Role / Timing Role: Low-side switch controlling 12 V/24 V loads with fast turn-off (tF = 3.4 ns) to suppress inductive kick and meet EMC Class 5 limits. Use Value: AEC-Q101 qualification and 100% UIS testing ensure zero field returns under repeated relay coil de-energization stress. |
Use Scenario: Synchronous rectification in 48 V-to-12 V bi-directional buck-boost converters for 48 V battery management. IC Role / Device Role / Timing Role: High-efficiency power switch operating at 200–300 kHz with low Qg (14.9 nC) and low RDS(ON) (122 mΩ) to minimize conduction and switching losses. Use Value: 133 mΩ RDS(ON) @ 4.5 V allows direct gate drive from controller's 5 V output - simplifies gate driver stage and reduces BOM count. |
| Electric Power Steering (EPS) Motor Driver | Industrial PLC Output Stage |
|
Use Scenario: Half-bridge leg in 3-phase inverter for brushless DC motor control in EPS systems. IC Role / Device Role / Timing Role: High-reliability N-channel switch with 150°C TJ rating and stable RDS(ON) vs. temperature - maintains torque accuracy across engine bay thermal extremes. Use Value: 20 mJ EAS withstands motor phase short-circuit events during fault conditions without latch-up or parametric shift. |
Use Scenario: Solid-state replacement for electromechanical relays in programmable logic controller digital output modules. IC Role / Device Role / Timing Role: Fast-switching, high-voltage (100 V) discrete MOSFET driving 24 V DC inductive loads (valves, contactors) with precise timing control. Use Value: 33% smaller footprint than SO-8 enables higher channel density (e.g., 16-channel output cards) while maintaining thermal margin via PowerDI3333-8 paddle. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3022LSD-13 | 30 V VDSS, 22 mΩ @ 10 V, SOT-23-6 package - lower voltage rating and smaller thermal mass. | Restricted to 12 V automotive subsystems (e.g., infotainment power rails); unsuitable for 48 V or motor drive. | Select only for low-voltage, low-power auxiliary loads where board space is extreme constraint and thermal budget <0.5 W. |
| IPB180N10S4-02 | 100 V VDSS, 1.8 mΩ @ 10 V, TO-263-7 package - 68× lower RDS(ON) but 5× larger footprint and no AEC-Q101 certification. | Requires heatsink and gate driver; lacks PPAP documentation - limited to non-automotive industrial inverters. | Choose only for high-current (>20 A), non-automotive applications where ultra-low conduction loss outweighs qualification and size requirements. |
Compared with DMN3022LSD-13 and IPB180N10S4-02, the DMN10H170SFGQ-7 uniquely balances AEC-Q101 compliance, 100 V capability, 4.5 V logic-level drive, and ultra-compact PowerDI3333-8 packaging - making it the only qualified option for space- and reliability-constrained 24–48 V automotive power switches.
Availability
DMN10H170SFGQ-7 is available at Aetrix Electronics and suitable for automotive body control modules, 48 V mild hybrid DC-DC converters, and electric power steering motor drivers requiring stable component supply, long-term lifecycle assurance, and full PPAP documentation support.
Supply support for DMN10H170SFGQ-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets with ISO/TS 16949-certified manufacturing.
This part belongs to Diodes' AEC-Q101-qualified PowerMOS portfolio, designed specifically for automotive power switching applications demanding robustness, thermal efficiency, and supply-chain transparency in safety-critical systems.
FAQ
Is DMN10H170SFGQ-7 suitable for 48 V battery system switching?
Yes. With 100 V VDSS, 20 mJ EAS, and AEC-Q101 qualification, it safely handles transients and inductive spikes common in 48 V automotive architectures. Its RDS(ON) of 133 mΩ @ 4.5 V enables direct MCU-level gate drive in battery disconnect and load-dump protection circuits.
What is the maximum continuous power dissipation at 70°C ambient?
At TA = +70°C with 1-inch² 2 oz copper pad, the device supports 1.3 W continuous power dissipation (PD = 1.3 W), corresponding to ~3.2 A drain current based on RDS(ON) derating and thermal resistance of 60 °C/W.
Does DMN10H170SFGQ-7 require a gate resistor for stability?
Yes. A 6.0 Ω gate resistor is specified in the datasheet for switching characterization (tD(ON), tF). This value damps gate oscillation and controls di/dt during turn-on/off - recommended for all production designs to ensure EMI compliance and prevent shoot-through in half-bridge configurations.
How is the gate terminal accessed in PowerDI3333-8 package?
The gate is internally bonded to pin 5 (Source) and requires external connection via PCB trace routed to pin 5. Pins 1–4 and 6–8 are all Drain; pin 5 is Source/Gate common - gate drive signal must be applied between pin 5 and the drain net (e.g., pins 1–4).
DMN10H170SFGQ-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.9A (Ta), 8.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 122mOhm @ 3.3A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 14.9 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 870.7 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 940mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- POWERDI3333-8
DMN10H170SFGQ-7 FAQ
1.How can I place an order for DMN10H170SFGQ-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN10H170SFGQ-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN10H170SFGQ-7 reliable?
The price and inventory of DMN10H170SFGQ-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN10H170SFGQ-7 is usually 5 days.
3.What payment methods are accepted for DMN10H170SFGQ-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN10H170SFGQ-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN10H170SFGQ-7?
DMN10H170SFGQ-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN10H170SFGQ-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN10H170SFGQ-7?
For technical support, including DMN10H170SFGQ-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN10H170SFGQ-7 requirements.
6.How does Aetrix verify that DMN10H170SFGQ-7 is sourced from the original manufacturer or authorized distributors?
All DMN10H170SFGQ-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN10H170SFGQ-7 meets industry standards.
7.What is the process for return or replacement of DMN10H170SFGQ-7?
All DMN10H170SFGQ-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN10H170SFGQ-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN10H170SFGQ-7 part is unused and in its original packaging.
Return procedure for DMN10H170SFGQ-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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