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Diodes Incorporated DMN10H170SVT-13
- Part No.:
- DMN10H170SVT-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
DMN10H170SVT-13.pdf
- Description:
- MOSFET N-CH 100V 2.6A TSOT26
- Quantity:
- Payment:
- Shipping:
Inventory:9,896
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Product details
Overview
DMN10H170SVT-13 from Diodes Incorporated is an N-channel enhancement-mode MOSFET with 100V V(BR)DSS, 160mΩ RDS(ON) @ 10V VGS, and 2.6A continuous drain current at 25°C - designed for high-efficiency power management in compact battery-operated systems and solid-state relay switching.
For engineers reviewing the DMN10H170SVT-13 datasheet, DMN10H170SVT-13 pinout, DMN10H170SVT-13 application, or DMN10H170SVT-13 equivalent, key selection criteria include low gate threshold (1.0–3.0V), fast switching (tD(on) = 10ns), TSOT26 package thermal performance (RθJA = 101°C/W), and 4.5V logic-level drive compatibility.
Technical Context
This MOSFET employs a trench-gate process to achieve low RDS(ON) while maintaining robust switching characteristics. Its 1.0–3.0V gate threshold enables direct interface with 3.3V and 5V microcontrollers, and its 1,167pF input capacitance supports efficient gate drive design at moderate frequencies.
The device integrates a body diode with 0.9–1.0V forward voltage and 30ns reverse recovery time, enabling use in freewheeling and bidirectional current paths. Thermal resistance of 15°C/W junction-to-case allows localized heat sinking in space-constrained layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 100V - supports operation in 48V industrial bus and 24V automotive auxiliary circuits without breakdown risk |
| RDS(ON) max | 160mΩ @ 10V VGS - delivers ≤416mW conduction loss at 2.6A, critical for thermal budget in TSOT26 footprint |
| ID max (25°C) | 2.6A - defines maximum steady-state load current under standard PCB layout (2oz Cu, minimal pad) |
| VGS(th) | 1.0–3.0V - ensures reliable turn-on with 3.3V GPIOs and avoids false triggering near ground noise margins |
| Ciss | 1,167pF - determines gate drive energy requirement (Qg = 9.7nC @ 10V) for <100kHz PWM applications |
| tD(on) | 10ns - enables precise timing control in digital load switching and pulse-width modulated power stages |
| RθJA | 101°C/W - sets junction temperature rise under 1.2W dissipation on FR-4 board, limiting ambient operating range |
Pinout & Package
Package: TSOT26 - ultra-thin surface-mount package (1.0mm height, 2.9mm × 2.8mm footprint) with exposed drain pad for thermal enhancement and RoHS-compliant matte tin finish.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; accepts 0–20V swing; low 1.3Ω gate resistance minimizes ringing during fast transitions |
| 2 (S) | Source | Reference node for gate drive; tied to system ground or low-side return path in high-side configurations |
| 3 (D) | Drain | High-voltage output node; connected to load or supply rail; electrically tied to exposed pad for thermal conduction |
| 4 (D) | Drain | Second drain connection; paralleled with Pin 3 to reduce package inductance and improve current sharing |
| 5 (S) | Source | Secondary source terminal; reduces source inductance in high-di/dt switching, improving stability |
| 6 (G) | Gate | Redundant gate connection; used for Kelvin gate sensing or dual-drive routing in precision gate control |
Key Features
| Feature | Design Value |
|---|---|
| Low gate threshold voltage | 1.0–3.0V range enables direct drive from 3.3V MCUs without level-shifting circuitry |
| Low input capacitance | 1,167pF Ciss reduces gate drive power and simplifies driver selection for 50–100kHz switching |
| Fast switching speed | 10ns turn-on delay + 11ns rise time supports clean edge integrity in digital load control |
| Thermally optimized package | TSOT26 with exposed drain pad achieves 15°C/W RθJC, allowing localized heatsinking on small PCB areas |
| Green construction | Halogen- and antimony-free molding compound (<900ppm Br/Cl, <1000ppm Sb) meets IPC-1752A environmental compliance |
Applications
| Battery-Powered Portable Devices | Solid-State Relay Replacement |
|---|---|
|
Use Scenario: Power sequencing and load switching in handheld medical monitors and portable test equipment with Li-ion battery input. IC Role / Device Role / Timing Role: Low-side switch controlling 5V/3.3V subsystem rails; activated by MCU GPIO with 100ms–1s duty cycles. Use Value: 160mΩ RDS(ON) limits voltage drop to <416mV at 2.6A, preserving battery runtime and enabling accurate low-voltage cutoff detection. |
Use Scenario: Replacing electromechanical relays in HVAC control panels and industrial PLC I/O modules. IC Role / Device Role / Timing Role: High-reliability, bounce-free switching element driving 24V DC solenoids and indicator lamps. Use Value: 11.2A pulsed drain rating and 30ns trr support rapid cycling (≥10Hz) without contact wear or arcing degradation. |
| LED Backlight Dimming | Microcontroller-Driven Actuators |
|
Use Scenario: PWM dimming control for white LED strings in automotive instrument clusters and industrial HMI displays. IC Role / Device Role / Timing Role: Synchronous low-side switch in constant-current LED driver stage operating at 1–5kHz. Use Value: Fast 10ns tD(on) and 12ns tf ensure minimal dead-time distortion, preserving PWM linearity across 0.1–100% brightness range. |
Use Scenario: Driving piezoelectric hammers, small DC motors, and memory write-enable lines in embedded data loggers. IC Role / Device Role / Timing Role: General-purpose digital output buffer with overvoltage protection and low leakage (<1µA IDSS). Use Value: 100V V(BR)DSS withstands inductive kickback from 24V actuators; 1.2W PD rating sustains 500ms surge loads without derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2004LK3-7 | Lower V(BR)DSS (20V), lower RDS(ON) (30mΩ @ 4.5V), higher ID (4.2A) | Restricted to ≤12V systems; unsuitable for 24V+ battery or industrial bus interfaces | Select when operating voltage ≤12V and lower conduction loss is prioritized over voltage margin |
| SI2302DS-T1-GE3 | Higher V(BR)DSS (20V), higher RDS(ON) (80mΩ @ 4.5V), same TSOT26 package | Compatible pinout but requires higher gate drive voltage for full enhancement; less efficient at 2.3A load | Choose only if legacy design reuse mandates identical footprint and cost sensitivity outweighs efficiency loss |
Compared with DMN2004LK3-7 and SI2302DS-T1-GE3, the DMN10H170SVT-13 uniquely balances 100V ruggedness, 4.5V logic-level turn-on, and TSOT26 thermal capability - making it the only option among the three suitable for 24–48V battery management and industrial control where both voltage headroom and low-voltage drive matter.
Availability
DMN10H170SVT-13 is available at Aetrix Electronics and suitable for battery-operated portable devices, solid-state relay replacement, and LED backlight dimming requiring stable component supply and consistent parametric performance across production lots.
Supply support for DMN10H170SVT-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, computing, and consumer markets.
This MOSFET belongs to Diodes' "Advanced Power" product line, engineered specifically for space-constrained, high-efficiency DC-DC conversion and load-switching applications where low RDS(ON), fast switching, and logic-level compatibility are mandatory.
FAQ
What is the maximum continuous drain current at 70°C ambient?
The DMN10H170SVT-13 supports 2.1A continuous drain current at TA = +70°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TSOT26 package on standard FR-4 PCBs with 2oz copper and minimum pad layout per Note 6.
Can this MOSFET be driven directly by a 3.3V microcontroller GPIO?
Yes - its gate threshold voltage range (1.0–3.0V) and low 1.3Ω gate resistance ensure full enhancement at 3.3V VGS, delivering ≤200mΩ RDS(ON) and supporting 2.3A ID at that drive level. No external level shifter is required.
Does the TSOT26 package include an exposed thermal pad?
Yes - Pins 1–3 and 4–6 form two electrically isolated drain-source-gate groups, with the exposed bottom pad connected to Drain (Pins 3 and 4). This pad must be soldered to a thermal copper area to achieve the rated RθJA = 101°C/W and RθJC = 15°C/W.
What is the safe operating area (SOA) limitation at DC operation?
At DC, the SOA is limited by RDS(ON) heating: maximum 1.2W power dissipation on standard PCB (RθJA = 101°C/W) yields a 121°C junction rise above ambient. With TJ(max) = 150°C, this restricts usable ambient to ≤29°C at full 2.6A ID unless additional copper or airflow is applied.
DMN10H170SVT-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 160mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 9.7 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1167 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.2W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TSOT-26
DMN10H170SVT-13 FAQ
1.How can I place an order for DMN10H170SVT-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN10H170SVT-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN10H170SVT-13 reliable?
The price and inventory of DMN10H170SVT-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN10H170SVT-13 is usually 5 days.
3.What payment methods are accepted for DMN10H170SVT-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN10H170SVT-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN10H170SVT-13?
DMN10H170SVT-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN10H170SVT-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN10H170SVT-13?
For technical support, including DMN10H170SVT-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN10H170SVT-13 requirements.
6.How does Aetrix verify that DMN10H170SVT-13 is sourced from the original manufacturer or authorized distributors?
All DMN10H170SVT-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN10H170SVT-13 meets industry standards.
7.What is the process for return or replacement of DMN10H170SVT-13?
All DMN10H170SVT-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN10H170SVT-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN10H170SVT-13 part is unused and in its original packaging.
Return procedure for DMN10H170SVT-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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