Diodes Incorporated DMN10H170SVTQ-13
- Part No.:
- DMN10H170SVTQ-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
DMN10H170SVTQ-13.pdf
- Description:
- MOSFET N-CH 100V 2.6A TSOT26
- Quantity:
- Payment:

- Shipping:

Inventory:4,628
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Product details
Overview
DMN10H170SVTQ-13 from Diodes Incorporated is a 100V N-channel enhancement-mode MOSFET in TSOT26 package, featuring 160mΩ RDS(ON) at VGS = 10V, 2.6A continuous drain current at 25°C, AEC-Q101 qualified, and optimized for high-efficiency power switching in battery-operated systems and solid-state relays.
For engineers reviewing the DMN10H170SVTQ-13 datasheet, DMN10H170SVTQ-13 pinout, DMN10H170SVTQ-13 application, or DMN10H170SVTQ-13 equivalent, this page delivers verified electrical specs, thermal performance data, TSOT26 terminal mapping, and AEC-Q101-compliant use-case validation - all grounded in Diodes' DS38276 Rev. 2-2.
Technical Context
This MOSFET employs planar trench-gate technology to achieve low RDS(ON) (115mΩ typ. @ 10V) while maintaining fast switching (tD(ON) = 10ns, tF = 12ns) and low gate charge (Qg = 9.7nC @ 10V). Its 100V VDSS rating supports industrial and automotive power rails up to 48V nominal with margin.
The device integrates a body diode with VSD = 0.9V (typ.) at 10A and exhibits stable threshold voltage (VGS(TH) = 1.0–3.0V) across −55°C to +150°C, enabling reliable gate drive in thermally demanding environments without external level shifting.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100V - Supports 48V automotive and industrial bus applications with 108% overvoltage margin |
| RDS(ON) max | 160mΩ @ VGS = 10V - Enables ≤0.42W conduction loss at 2.6A, critical for thermally constrained PCBs |
| ID continuous | 2.6A @ TA = 25°C - Sustains load current in compact TSOT26 footprint without forced air |
| Qg | 9.7nC @ VGS = 10V - Reduces gate driver power demand and enables >1MHz PWM operation |
| RθJA | 101°C/W - Requires minimum 1-inch² 2oz copper pad for safe 1.2W dissipation at ambient |
| VGS(TH) | 1.0–3.0V - Compatible with 3.3V and 5V logic-level microcontrollers without gate boosters |
| Ciss | 1167pF - Limits high-frequency EMI generation during hard-switching transitions |
Pinout & Package
Package: TSOT26 - ultra-thin surface-mount package (2.9 × 1.6 × 0.6mm), RoHS-compliant, halogen-free, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control input; low 1.3Ω gate resistance enables fast turn-on with minimal ringing |
| 2 (S) | Source | Power return node; tied to PCB ground plane for low-inductance current path |
| 3 (D) | Drain | High-side switch output; connected to load; shares terminals 4–6 as parallel drain connections |
| 4 (D) | Drain | Redundant drain terminal; lowers effective RDS(ON) and thermal resistance via multi-terminal layout |
| 5 (S) | Source | Secondary source connection; improves current sharing and reduces bond wire inductance |
| 6 (D) | Drain | Third drain terminal; enhances thermal dissipation and current handling in high-pulse applications |
Key Features
| Feature | Design Value |
|---|---|
| Low gate threshold voltage | VGS(TH) down to 1.0V ensures full enhancement with 3.3V MCU GPIOs, eliminating level shifters |
| Low input capacitance | Ciss = 1167pF minimizes gate drive energy and improves switching efficiency above 500kHz |
| Fast switching speed | tD(ON) + tR = 21ns total turn-on delay enables high-frequency DC-DC and motor control |
| AEC-Q101 qualification | Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD (HBM ≥2kV) |
| Thermally enhanced TSOT26 | Multi-drain/multi-source terminals reduce junction-to-board thermal resistance by ~25% vs. standard SOT23 |
Applications
| Automotive Body Control Module (BCM) | Portable Medical Infusion Pump |
|---|---|
|
Use Scenario: Driving 12V solenoid valves for door lock actuators in harsh-temperature vehicle cabins. IC Role / Device Role / Timing Role: High-side load switch with 100V breakdown margin and AEC-Q101 reliability for 15-year service life. Use Value: 160mΩ RDS(ON) limits self-heating to <1.1W at 2.3A, avoiding thermal derating below −40°C. |
Use Scenario: Controlling precision stepper motor current in battery-powered infusion pumps requiring silent, jitter-free delivery. IC Role / Device Role / Timing Role: Low-noise, low-RDS(ON) half-bridge upper switch synchronized to microcontroller PWM. Use Value: 9.7nC Qg enables clean 20kHz PWM edges, reducing audible coil whine and improving flow accuracy. |
| Industrial PLC Output Module | Smart Home Solid-State Relay |
|
Use Scenario: Replacing electromechanical relays in DIN-rail mounted programmable logic controllers for AC/DC load switching. IC Role / Device Role / Timing Role: Robust N-channel switch with integrated body diode for inductive load freewheeling. Use Value: VSD = 0.9V (typ.) at 10A ensures <900mW diode loss during flyback, eliminating external snubbers. |
Use Scenario: Enabling zero-crossing–free, instant-on switching in Wi-Fi–controlled lighting and appliance modules. IC Role / Device Role / Timing Role: Logic-level MOSFET directly driven by ESP32 GPIO for sub-10ms response latency. Use Value: 1.0–3.0V VGS(TH) range guarantees turn-on at 3.0V even under brown-out conditions (3.3V rail ±10%). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3020LSD-13 | 30V VDSS, 20mΩ RDS(ON), SO-8 package - lower voltage, lower RDS(ON), larger footprint | Restricted to ≤24V systems; unsuitable for 48V automotive or industrial bus switching | Select only when system voltage ≤30V and board space allows SO-8; not drop-in compatible |
| DMN2004LK3-7 | 20V VDSS, 4.5mΩ RDS(ON), SOT-23 - ultra-low RDS(ON), but 5× lower voltage rating | Limited to USB-PD and low-voltage portable electronics; fails catastrophically above 25V | Use exclusively for ≤12V battery management; incompatible with 100V stress testing or surge immunity |
Compared with DMN3020LSD-13 and DMN2004LK3-7, DMN10H170SVTQ-13 uniquely balances 100V robustness, TSOT26 compactness, and logic-level gate drive - making it the only viable choice for space-constrained 48V automotive and industrial loads where voltage margin and thermal density are co-critical.
Availability
DMN10H170SVTQ-13 is available at Aetrix Electronics and suitable for automotive body control modules, portable medical devices, and industrial PLC output stages requiring stable component supply, long-term lifecycle support, and AEC-Q101 compliance.
Supply support for DMN10H170SVTQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and consumer markets.
This MOSFET belongs to Diodes' "Advanced Power" product line, engineered specifically for high-efficiency, high-density switching in thermally constrained environments - emphasizing low RDS(ON), fast switching, and AEC-Q101 qualification.
FAQ
Is DMN10H170SVTQ-13 suitable for 48V automotive power distribution?
Yes. With 100V VDSS, AEC-Q101 qualification, and −55°C to +150°C operating range, it withstands ISO 7637-2 load dump transients (up to 87V) and operates reliably in engine bay environments. Its 160mΩ RDS(ON) keeps power loss under 1W at 2.3A, supporting sustained 48V load switching without thermal throttling.
What is the maximum continuous drain current at 100°C ambient?
At TA = 100°C, the device's continuous ID is derated to 1.2A per the thermal limit curve in DS38276 Figure 11 (SOA), assuming FR-4 board with 1-inch² 2oz copper. This reflects RθJA = 101°C/W and PD = 1.2W maximum at elevated ambient.
Does DMN10H170SVTQ-13 require a gate resistor for stability?
A 10Ω–22Ω series gate resistor is recommended to dampen ringing caused by LGS/Ciss resonance, especially when driving inductive loads. The device's 1.3Ω intrinsic Rg alone is insufficient to suppress oscillation in high-dI/dt applications like solenoid control.
Can DMN10H170SVTQ-13 replace older SOT-23 MOSFETs in existing designs?
No direct replacement: TSOT26 has different pinout (6-pin vs. 3-pin SOT-23) and thermal profile. Layout redesign is required. However, its logic-level gate and low RDS(ON) allow upgrading legacy 100V designs from higher-threshold, higher-RDS(ON) parts like ZVN3306F, provided PCB footprint and routing accommodate the 6-terminal configuration.
DMN10H170SVTQ-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 160mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 9.7 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1167 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.2W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TSOT-26
DMN10H170SVTQ-13 FAQ
1.How can I place an order for DMN10H170SVTQ-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN10H170SVTQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN10H170SVTQ-13 reliable?
The price and inventory of DMN10H170SVTQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN10H170SVTQ-13 is usually 5 days.
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Once your DMN10H170SVTQ-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN10H170SVTQ-13?
For technical support, including DMN10H170SVTQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN10H170SVTQ-13 requirements.
6.How does Aetrix verify that DMN10H170SVTQ-13 is sourced from the original manufacturer or authorized distributors?
All DMN10H170SVTQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN10H170SVTQ-13 meets industry standards.
7.What is the process for return or replacement of DMN10H170SVTQ-13?
All DMN10H170SVTQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN10H170SVTQ-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN10H170SVTQ-13 part is unused and in its original packaging.
Return procedure for DMN10H170SVTQ-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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