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Diodes Incorporated DMN10H170SVTQ-7
- Part No.:
- DMN10H170SVTQ-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
DMN10H170SVTQ-7.pdf
- Description:
- MOSFET N-CH 100V 2.6A TSOT26
- Quantity:
- Payment:
- Shipping:
Inventory:417
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Product details
Overview
DMN10H170SVTQ-7 from Diodes Incorporated is a 100V N-channel enhancement-mode MOSFET in TSOT26 package, featuring 160mΩ RDS(ON) at VGS = 10V, 2.6A continuous drain current at 25°C, AEC-Q101 qualified, and optimized for high-efficiency power switching in battery-operated systems and solid-state relays.
For engineers reviewing the DMN10H170SVTQ-7 datasheet, DMN10H170SVTQ-7 pinout, DMN10H170SVTQ-7 application, or DMN10H170SVTQ-7 equivalent, key selection criteria include its low gate threshold (1.0–3.0V), fast switching (tD(ON) = 10ns), 1.2W power dissipation, 101°C/W RθJA, and TSOT26 thermal performance under FR-4 PCB conditions.
Technical Context
This MOSFET employs planar trench-gate technology to achieve low RDS(ON) while maintaining robust switching behavior. Its 1.0–3.0V gate threshold enables direct drive from 3.3V/5V logic, and integrated body diode supports bidirectional current handling in relay/solenoid drivers.
The device operates across –55°C to +150°C junction temperature range with 100V VDSS, 11.2A pulsed drain capability, and 15°C/W RθJC, supporting stable operation in thermally constrained portable and automotive-grade applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100V - Withstands up to 100V drain-source voltage before breakdown, suitable for 48V industrial bus and 12V/24V automotive loads. |
| RDS(ON) | 160mΩ @ VGS = 10V - Delivers <160mΩ on-resistance at standard logic-level gate drive, minimizing conduction loss in DC-DC and load-switching circuits. |
| ID (continuous) | 2.6A @ TA = 25°C - Supports sustained 2.6A load current on standard FR-4 PCB with 2oz copper and minimum pad layout. |
| Qg | 9.7nC @ VGS = 10V - Low total gate charge enables efficient high-frequency switching with reduced driver power demand. |
| tD(ON) | 10ns - Fast turn-on delay ensures precise timing control in PWM-driven solenoids and lamp dimming circuits. |
| RθJA | 101°C/W - Thermal resistance measured on FR-4 board with minimum pad layout; defines safe operating area under natural convection cooling. |
| VGS(TH) | 1.0–3.0V - Gate threshold compatible with 3.3V microcontrollers and logic ICs without level-shifting circuitry. |
Pinout & Package
Package: TSOT26 - 6-pin ultra-thin small outline transistor package with matte tin-annealed terminals, UL 94V-0 rated molding compound, and 0.015g mass. Moisture sensitivity level 1 per J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (S) | Source | Main current return path; internally connected to substrate; used for Kelvin sensing in precision load monitoring. |
| 2 (G) | Gate | Control terminal; low input capacitance (1167pF) reduces driver loading and improves EMI margin. |
| 3 (D) | Drain | High-side power input node; electrically tied to all four drain pins (1,2,3,4 in internal die layout). |
| 4 (D) | Drain | Parallel drain connection for enhanced current sharing and lower package inductance in high-dI/dt switching. |
| 5 (S) | Source | Secondary source terminal; provides low-inductance return path and improves thermal spreading via dual-source routing. |
| 6 (G) | Gate | Redundant gate connection for improved signal integrity and reduced gate loop inductance in high-speed layouts. |
Key Features
| Feature | Design Value |
|---|---|
| Low gate threshold voltage | 1.0–3.0V range enables direct interface with 3.3V I/O without external level shifters or gate drivers. |
| Fast switching speed | 10ns turn-on delay and 11ns rise time support >1MHz PWM operation in compact DC-DC converters. |
| Low input capacitance | 1167pF Ciss reduces gate drive energy and minimizes switching losses in high-frequency applications. |
| AEC-Q101 qualification | Qualified for automotive-grade reliability including temperature cycling, HTRB, and ESD testing per AEC standards. |
| Green packaging | Halogen- and antimony-free molding compound (<900ppm Br/Cl, <1000ppm Sb) meets global environmental compliance mandates. |
Applications
| Battery-Powered Portable Devices | Solid-State Relay Modules |
|---|---|
Use Scenario: Power path control in handheld medical monitors and IoT sensors requiring low quiescent current and long battery life. IC Role / Device Role / Timing Role: Load switch managing main system rail; controlled by MCU GPIO with minimal gate drive overhead. Use Value: 1.0V gate threshold allows full enhancement at 2.8V battery voltage, preserving >95% of usable battery range before cutoff. | Use Scenario: Replacing electromechanical relays in HVAC control panels and industrial PLC output modules. IC Role / Device Role / Timing Role: High-side switching element driving 24V solenoid valves and indicator lamps with zero contact bounce. Use Value: 11.2A pulsed current rating supports inrush surge of 24V AC/DC coils; 30ns reverse recovery time prevents cross-conduction in half-bridge configurations. |
| Automotive Body Electronics | LED Backlight Drivers |
Use Scenario: Door lock actuator and mirror position control in 12V vehicle architectures. IC Role / Device Role / Timing Role: Low-side driver interfacing with LIN or CAN transceiver outputs to energize brushed DC motors. Use Value: AEC-Q101 qualification ensures operation over –40°C to +125°C ambient; 150°C max junction temperature accommodates under-hood thermal stress. | Use Scenario: Constant-current LED string switching in automotive instrument clusters and infotainment displays. IC Role / Device Role / Timing Role: PWM-controlled current sink enabling precise brightness regulation and dynamic contrast adjustment. Use Value: 200mΩ RDS(ON) at 4.5V gate drive matches typical LED driver supply rails; low Qgd/Qgs ratio improves duty-cycle linearity at 20kHz+ frequencies. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3022LSD-13 | 30V VDSS, 22mΩ RDS(ON) @ 10V, SO-8 package - lower voltage rating, higher current, larger footprint. | Not suitable for 48V or automotive 24V systems; limited to ≤30V battery management and USB PD load switches. | Select only when VDS stress remains <20V and board space permits SO-8 thermal relief. |
| AO3414 | 40V VDSS, 50mΩ RDS(ON) @ 10V, SOT-23-3 - single-drain configuration, no dual-source pin, lower thermal capacity. | Lacks AEC-Q101 qualification and fails at >85°C ambient in sealed enclosures due to 1.1W PD limit. | Acceptable for consumer-grade 5V/12V logic-level switching where automotive reliability and thermal headroom are not required. |
Compared with DMN3022LSD-13 and AO3414, DMN10H170SVTQ-7 uniquely balances 100V blocking, AEC-Q101 compliance, TSOT26 miniaturization, and 2.6A continuous current-making it the only option among the three viable for thermally constrained, safety-critical 24V/48V automotive and industrial load switching.
Availability
DMN10H170SVTQ-7 is available at Aetrix Electronics and suitable for battery-operated portable devices, solid-state relay modules, and automotive body electronics requiring stable component supply, consistent parametric performance, and long-term lifecycle support.
Supply support for DMN10H170SVTQ-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing facilities in China, Taiwan, and the U.S.
This device belongs to Diodes' Automotive-Qualified Power MOSFET product line, engineered specifically for reliable, low-loss switching in 12V–48V automotive subsystems and ruggedized industrial controls.
FAQ
What is the maximum continuous drain current at 70°C ambient?
The DMN10H170SVTQ-7 delivers 2.1A continuous drain current at TA = +70°C with standard FR-4 PCB mounting and minimum recommended pad layout. This derating reflects thermal limits imposed by its 101°C/W RθJA and 1.2W power dissipation rating.
Does this MOSFET have an integrated body diode, and what is its forward voltage?
Yes, it features an intrinsic body diode with VSD = 0.9–1.0V at IS = 10A and VGS = 0V. The diode supports freewheeling current in inductive loads like solenoids and relays, and its 30ns reverse recovery time minimizes switching loss during commutation.
Can DMN10H170SVTQ-7 be driven directly from a 3.3V microcontroller GPIO?
Yes - its 1.0–3.0V gate threshold ensures full enhancement at 3.3V, and 115mΩ typical RDS(ON) at VGS = 4.5V confirms strong conduction even with marginal overdrive. No external gate driver is needed for ≤2.3A loads at moderate switching frequencies.
What is the moisture sensitivity level (MSL) and reflow profile compliance?
The device is rated MSL Level 1 per J-STD-020, meaning it has unlimited floor life at ≤30°C/60% RH and may be reflowed using standard lead-free profiles (peak 260°C, 20–40 sec above 217°C) without baking. Terminal finish is matte tin annealed over copper, compliant with MIL-STD-202 Method 208.
DMN10H170SVTQ-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 160mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 9.7 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1167 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.2W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TSOT-26
DMN10H170SVTQ-7 FAQ
1.How can I place an order for DMN10H170SVTQ-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN10H170SVTQ-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN10H170SVTQ-7 reliable?
The price and inventory of DMN10H170SVTQ-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN10H170SVTQ-7 is usually 5 days.
3.What payment methods are accepted for DMN10H170SVTQ-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN10H170SVTQ-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN10H170SVTQ-7?
DMN10H170SVTQ-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN10H170SVTQ-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN10H170SVTQ-7?
For technical support, including DMN10H170SVTQ-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN10H170SVTQ-7 requirements.
6.How does Aetrix verify that DMN10H170SVTQ-7 is sourced from the original manufacturer or authorized distributors?
All DMN10H170SVTQ-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN10H170SVTQ-7 meets industry standards.
7.What is the process for return or replacement of DMN10H170SVTQ-7?
All DMN10H170SVTQ-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN10H170SVTQ-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN10H170SVTQ-7 part is unused and in its original packaging.
Return procedure for DMN10H170SVTQ-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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