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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMN10H220L-13

Name: DMN10H220L-13
Brand: Diodes Incorporated
SKU: DMN10H220L-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN10H220L-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: DMN10H220L-13.pdf

Description:: MOSFET N-CH 100V 1.4A SOT23

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Product details

Overview

DMN10H220L-13 from Diodes Incorporated is a 100V N-channel enhancement-mode MOSFET in SOT23 package, with R_DS(ON) = 220 mΩ @ V_GS = 10 V, I_D = 1.6 A at T_A = +25°C, and low input capacitance (C_iss = 401 pF). It serves as a compact, high-efficiency load switch in space-constrained DC-DC and battery-powered systems.

For engineers reviewing the DMN10H220L-13 datasheet, DMN10H220L-13 pinout, DMN10H220L-13 application, or DMN10H220L-13 equivalent, key selection criteria include its 100V V_DSS, 220 mΩ on-resistance at 10 V gate drive, thermal resistance of 94 °C/W, SOT23 footprint compatibility, and suitability for low-duty-cycle switching in portable power rails.

Technical Context

This MOSFET employs planar trench-gate technology to balance low R_DS(ON) and fast switching speed. Its gate threshold voltage (V_GS(TH) = 1–2.5 V) enables reliable turn-on with 4.5 V logic-level drive, while low C_iss and C_rss (17 pF) reduce switching losses in high-frequency load-switching topologies.

The device integrates a body diode with V_SD = 0.7–1.2 V at I_S = 1.1 A and t_RR = 17 ns, supporting synchronous rectification in low-power buck converters. Thermal design is constrained by R_θJA = 94 °C/W on FR-4 with minimum pad layout, limiting continuous power dissipation to 1.3 W at 25°C ambient.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - supports input rails up to 80 V DC with 20% safety margin in industrial and automotive auxiliary supplies
R_DS(ON)	220 mΩ @ V_GS = 10 V - delivers ≤350 mW conduction loss at 1.3 A, enabling thermally viable operation in unheatsinked SOT23 layouts
I_D	1.6 A @ T_A = +25°C - rated for sustained current in always-on bias rails and USB-C power path switches
C_iss	401 pF @ V_DS = 25 V - minimizes gate drive energy and propagation delay in 1–5 MHz switching applications
t_RR	17 ns - reduces reverse recovery loss and EMI in discontinuous conduction mode (DCM) flyback snubbers
R_θJA	94 °C/W - defines maximum allowable power dissipation of 1.3 W at 25°C ambient without thermal derating
V_GS(TH)	1–2.5 V - ensures full enhancement with standard 3.3 V or 5 V microcontroller GPIO outputs

Pinout & Package

Package: SOT23 (Standard), 3-pin surface-mount plastic package per JEDEC TO-236AB; dimensions: 2.90 mm × 1.30 mm × 1.03 mm (D × E × A2); RoHS-compliant matte tin finish on copper leadframe.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Current return path for channel conduction	Connected to system ground or low-side reference; ties directly to PCB ground plane for thermal and noise control
2 (Gate)	Control electrode for channel modulation	Requires <100 nA leakage drive; sensitive to ESD-must be routed away from noisy traces and protected with RC filter if driven by long lines
3 (Drain)	High-side current entry point	Carries switched load current; requires adequate copper area and thermal vias to manage 1.3 W dissipation in continuous operation

Key Features

Feature	Design Value
Low R_DS(ON) at 4.5 V drive	250 mΩ - enables direct interface with 3.3 V logic without level-shifting in battery management ICs
Fast switching with low Q_g	Q_g = 4.1 nC @ V_GS = 4.5 V - reduces gate driver power consumption and enables <100 ns transition times with 10 Ω series resistance
Low gate leakage	I_GSS ≤ ±100 nA @ V_GS = ±16 V - prevents unintended turn-on in high-impedance bias networks and extends battery life in always-on circuits
Green, halogen-free construction	<900 ppm Br, <900 ppm Cl, <1000 ppm Sb - meets IPC-1752A Class 3 material declarations for automotive and medical OEM compliance

Applications

USB Power Delivery Switch

Industrial Sensor Bias Rail

Use Scenario: Isolating VBUS during hot-plug events in USB-C PD sink implementations.

IC Role / Device Role / Timing Role: Low-side load switch controlling 5–20 V input to PMIC, activated by MCU GPIO with <10 μs response.

Use Value: 220 mΩ R_DS(ON) limits voltage drop to <330 mV at 1.5 A, preserving PD negotiation margins; SOT23 footprint saves board space vs. SO-8 alternatives.

Use Scenario: Enabling/disabling 12 V bias supply to analog sensor front-ends in programmable logic controllers.

IC Role / Device Role / Timing Role: High-reliability power gate with 100 V rating tolerating 48 V industrial transients per IEC 61000-4-5.

Use Value: 100 V V_DSS provides 4× overvoltage headroom; low I_DSS (<1 µA) prevents false wake-up in sleep modes.

Portable Medical Device Battery Protection

Smart Home IoT Node Power Sequencing

Use Scenario: Disconnecting Li-ion battery from charging circuit during fault conditions in wearable pulse oximeters.

IC Role / Device Role / Timing Role: Fail-safe disconnect switch triggered by fuel gauge alert signal, requiring <1 ms turn-off time.

Use Value: t_F = 3.6 ns and t_D(OFF) = 7.9 ns ensure rapid isolation; 1.3 A rating covers peak sensor burst currents.

Use Scenario: Staggered power-up of RF SoC, memory, and peripherals in battery-operated smart locks.

IC Role / Device Role / Timing Role: Controlled rail enable element sequenced via GPIO-controlled gate drive with RC timing network.

Use Value: V_GS(TH) = 1–2.5 V guarantees turn-on with 3.3 V MCU output; 0.0072 g mass supports ultra-lightweight PCB assembly.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN10H220LQ-13	Automotive-grade variant (AEC-Q101 qualified); identical electrical specs but tighter V_GS(TH) distribution (1.2–2.2 V) and extended temperature range (−40°C to +150°C)	Required for under-hood or infotainment power gating where qualification traceability is mandatory	Select when automotive PPAP documentation, lot traceability, and failure-in-time (FIT) data are contractually required
AO3400A	Lower R_DS(ON) (28 mΩ @ 10 V) but higher C_iss (670 pF); same SOT23 package and 30 V V_DSS	Limited to ≤30 V systems; unsuitable for 48 V industrial or 100 V surge-tolerant designs	Prefer only for cost-sensitive 5–24 V consumer electronics where lower conduction loss outweighs reduced voltage margin

Compared with DMN10H220LQ-13, the base DMN10H220L-13 offers identical performance at lower cost and lead time for commercial-grade applications, while AO3400A trades voltage capability for lower on-resistance-making it incompatible for 48 V+ use cases despite shared footprint.

Availability

DMN10H220L-13 is available at Aetrix Electronics and suitable for USB-C power delivery modules, industrial sensor bias rails, portable medical device battery protection, and smart home IoT node power sequencing requiring stable component supply across production lifecycles.

Supply support for DMN10H220L-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the U.S.

This MOSFET belongs to Diodes' "PowerMOS" portfolio, engineered specifically for high-efficiency, low-footprint load switching in battery-powered and industrial power management systems where thermal density and gate drive simplicity are critical.

FAQ

What is the maximum continuous drain current at 70°C ambient?

The DMN10H220L-13 supports 1.3 A continuous drain current at T_A = +70°C when mounted on an FR-4 board with 2 oz copper and minimum recommended pad layout. Derating follows linear interpolation between 1.6 A at 25°C and 1.1 A at 70°C for the thermal-via-enhanced configuration.

Can this MOSFET be used with 3.3 V logic-level gate drive?

Yes-its gate threshold voltage range (1–2.5 V) ensures full enhancement at V_GS = 3.3 V, delivering R_DS(ON) ≤ 250 mΩ at I_D = 1.3 A. However, dynamic performance (t_R, t_F) degrades slightly versus 4.5 V or 10 V drive due to reduced transconductance.

Is the body diode suitable for reverse polarity protection?

No-the integrated body diode conducts from source to drain and cannot block reverse voltage. For reverse polarity protection, the device must be placed in the high-side configuration with external series diode or used in conjunction with a dedicated protection IC; standalone reverse blocking requires external components.

Does this part have moisture sensitivity level (MSL) restrictions?

Yes-DMN10H220L-13 is rated MSL Level 1 per J-STD-020, meaning it has unlimited floor life at ≤30°C/60% RH and does not require baking prior to reflow. This simplifies SMT assembly for high-mix, low-volume production environments.

DMN10H220L-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 1.4A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 220mOhm @ 1.6A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 8.3 nC @ 10 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 401 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 1.3W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3

DMN10H220L-13 FAQ

1.How can I place an order for DMN10H220L-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN10H220L-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN10H220L-13 reliable?

The price and inventory of DMN10H220L-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN10H220L-13 is usually 5 days.

3.What payment methods are accepted for DMN10H220L-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN10H220L-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN10H220L-13?

DMN10H220L-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN10H220L-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN10H220L-13?

For technical support, including DMN10H220L-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN10H220L-13 requirements.

6.How does Aetrix verify that DMN10H220L-13 is sourced from the original manufacturer or authorized distributors?

All DMN10H220L-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN10H220L-13 meets industry standards.

7.What is the process for return or replacement of DMN10H220L-13?

All DMN10H220L-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN10H220L-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN10H220L-13 part is unused and in its original packaging.

Return procedure for DMN10H220L-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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