My Inquiry
My Account
Diodes Incorporated DMN10H220LDV-13
- Part No.:
- DMN10H220LDV-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-PowerVDFN
- Datasheet:
-
DMN10H220LDV-13.pdf
- Description:
- MOSFET 2N-CH 100V PWRDI3333
- Quantity:
- Payment:
- Shipping:
Inventory:6,033
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
DMN10H220LDV-13 from Diodes Incorporated is a dual 100V N-channel enhancement-mode MOSFET in PowerDI3333-8 (Type UXC) package, rated for 10.5A continuous drain current at VGS = 10V, with RDS(ON) = 222 mΩ max, optimized for high-efficiency load switching in DC-DC converters and power distribution systems.
For engineers reviewing the DMN10H220LDV-13 datasheet, DMN10H220LDV-13 pinout, DMN10H220LDV-13 application, or DMN10H220LDV-13 equivalent, key selection criteria include its dual-channel layout, 100V BVDSS rating, low gate charge (Qg = 6.7 nC @ 10V), 100% UIS-tested ruggedness, and thermal performance (RθJC = 3.12°C/W).
Technical Context
This dual N-channel MOSFET integrates two independent 100V/10.5A switches sharing a common exposed drain pad for thermal efficiency. Its gate threshold voltage (VGS(TH) = 1–2.5V) enables compatibility with 3.3V and 5V logic-level drive, while low Ciss (366 pF) and fast switching (tD(ON) = 6.2 ns) support high-frequency operation up to 1 MHz.
The device features matched channel characteristics, low body diode forward voltage (VSD = 0.8–1.3V), and robust avalanche capability (EAS = 1.1 mJ), making it suitable for synchronous rectification and inductive load control where bidirectional conduction and energy recovery matter.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100 V - supports input rails up to 48V nominal with 2× safety margin for transient spikes |
| RDS(ON) @ 10V | 222 mΩ max - limits conduction loss to ≤2.3 W at 10.5A, enabling compact thermal design |
| ID (TC = 25°C) | 10.5 A - defines maximum continuous current under heatsink-cooled conditions |
| Qg @ 10V | 6.7 nC - determines gate driver power requirement and switching transition time |
| RθJC | 3.12 °C/W - enables direct thermal path to PCB copper or heatsink, critical for power density |
| EAS | 1.1 mJ - quantifies single-pulse avalanche energy handling without failure, essential for inductive load reliability |
| Ciss | 366 pF - impacts Miller effect and gate drive stability in high-speed switching topologies |
Pinout & Package
Package: PowerDI3333-8 (Type UXC), surface-mount, thermally enhanced with exposed drain pad (D1/D2 shared electrically and thermally). Molded green compound, UL 94V-0 rated, MSL Level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (D1) | Drain 1 | High-side switch node for Channel 1; electrically tied to exposed pad for thermal conduction |
| Pin 2 (S1) | Source 1 | Return path for Channel 1; isolated from S2 for independent control |
| Pin 3 (G1) | Gate 1 | Control input for Channel 1; requires <2.5V threshold to turn on with 3.3V logic |
| Pin 4 (D2) | Drain 2 | High-side switch node for Channel 2; internally connected to same exposed pad as D1 |
| Pin 5 (S2) | Source 2 | Return path for Channel 2; separate from S1 to enable dual independent loads |
| Pin 6 (G2) | Gate 2 | Control input for Channel 2; electrically isolated from G1 for asynchronous operation |
| Exposed Pad | Common Drain / Thermal Slug | Primary thermal interface; must be soldered to ≥1-in² 2 oz copper for rated 40W PD |
Key Features
| Feature | Design Value |
|---|---|
| 100% UIS tested | Guarantees reliable operation under unclamped inductive switching stress without derating |
| Low RDS(ON) @ 4.5V | 270 mΩ max enables full-load operation with 5V microcontroller GPIO drive |
| Low Qgd/Qgs ratio | 2.0 nC / 1.3 nC = 1.54 reduces Miller-induced shoot-through risk in half-bridge configurations |
| Halogen- & antimony-free | Meets automotive "Green" requirements (<900 ppm Br+Cl, <1000 ppm Sb) without compromising reliability |
| Thermally optimized package | RθJC = 3.12°C/W allows >12W dissipation with minimal ΔT over ambient when properly mounted |
Applications
| DC-DC Converter Synchronous Rectifier | Industrial Load Switching |
|---|---|
Use Scenario: Replacing Schottky diodes in 12V–48V buck converter secondary side to reduce conduction losses. IC Role / Device Role / Timing Role: Dual N-channel MOSFET operating in synchronous rectification mode, driven by controller's complementary gate signals. Use Value: Achieves >95% efficiency at 10A output by cutting VF drop from 0.4V to <0.05V, reducing heat generation by 80% vs. diode solution. | Use Scenario: Controlling power delivery to field I/O modules in programmable logic controllers (PLCs). IC Role / Device Role / Timing Role: Dual high-side load switch providing independent ON/OFF control of two 24V sensor or actuator circuits. Use Value: Enables hot-swap capability and short-circuit protection via current limiting, with <100 ns turn-off preventing latch-up during fault events. |
| Automotive Body Control Module | USB-C Power Delivery Switch |
Use Scenario: Managing power to lighting clusters and window lift motors in AEC-Q101 qualified BCM designs. IC Role / Device Role / Timing Role: Dual N-channel switch handling 10A peak loads with integrated avalanche energy rating for motor back-EMF suppression. Use Value: Eliminates need for external flyback diodes and reduces board area by 35% versus discrete solutions while meeting ISO 7637-2 pulse test requirements. | Use Scenario: Enabling/disabling 20V/5A power paths in USB-C PD sink applications requiring dual-rail control. IC Role / Device Role / Timing Role: Dual-channel power switch supporting independent VBUS and VCONN rail control with low leakage (<1 µA) in OFF state. Use Value: Meets USB-IF specification for <100 µs response time and <10 nA off-state leakage, ensuring compliance with Type-C port power management timing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel load switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN10H220LSD-13 | Same die, SO-8 package - higher RθJA (100°C/W vs. 70°C/W), no exposed drain pad | Limited to ≤3W continuous dissipation; unsuitable for >5A sustained loads without forced air | Select when board space permits SO-8 footprint and thermal budget allows lower power density |
| IPD30N10N3-13 | 100V, 30A single-channel TSD3 package - 12.5 mΩ RDS(ON), but no dual configuration | Requires two devices + extra routing for dual-load control; higher gate charge (25 nC) | Choose only if higher current per channel (>15A) is required and dual integration is not mandatory |
Compared with DMN10H220LDV-13, DMN10H220LSD-13 trades thermal performance for legacy package compatibility, while IPD30N10N3-13 offers lower RDS(ON) but sacrifices integration, increasing BOM count and layout complexity for dual-load applications.
Availability
DMN10H220LDV-13 is available at Aetrix Electronics and suitable for industrial PLCs, automotive body control modules, and USB-C power delivery systems requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.
Supply support for DMN10H220LDV-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.
The DMN10H220LDV belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency, high-reliability power switching in automotive, industrial, and computing applications where ruggedness, thermal performance, and logic-level drive matter.
FAQ
What is the maximum safe operating junction temperature for DMN10H220LDV-13?
The absolute maximum junction temperature is +150°C, verified per JEDEC JESD22-A108. Operation above this limit risks permanent parametric shift or bond wire failure. Derating is required above +125°C ambient when dissipating >20W; thermal simulation using RθJC = 3.12°C/W and PCB copper area is recommended for precise margining.
Can DMN10H220LDV-13 be used in linear (analog) regulation mode?
No - this MOSFET is optimized for switching operation only. Its Safe Operating Area (SOA) curve shows limited linear region capability: at VDS = 20V, maximum continuous current drops to ~1.5A due to second breakdown limitations. Linear use risks thermal runaway and irreversible damage without active current limiting and aggressive heatsinking.
Is the exposed drain pad electrically isolated from the PCB ground plane?
No - the exposed pad is electrically connected to both D1 and D2 terminals. It must be soldered to a dedicated, non-grounded copper pour unless the circuit topology explicitly requires drain-to-ground connection. Floating or grounded pad without electrical tie to D1/D2 violates internal construction and causes functional failure.
Does DMN10H220LDV-13 meet AEC-Q101 qualification?
Yes - Diodes Incorporated certifies DMN10H220LDV as AEC-Q101 qualified for automotive applications. Full qualification report (including HTGB, TC, HTRB, and UIS testing) is available upon request through authorized Diodes representatives and applies to all date codes marked "C60" or later per DS42491 Rev. 1-2.
DMN10H220LDV-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 100V
- Current - Continuous Drain (Id) @ 25°C:
- 10.5A (Tc)
- Rds On (Max) @ Id, Vgs:
- 222mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 6.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 366pF @ 50V
- Power - Max:
- 1.8W (Ta), 40W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI3333-8 (Type UXC)
DMN10H220LDV-13 FAQ
1.How can I place an order for DMN10H220LDV-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN10H220LDV-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN10H220LDV-13 reliable?
The price and inventory of DMN10H220LDV-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN10H220LDV-13 is usually 5 days.
3.What payment methods are accepted for DMN10H220LDV-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN10H220LDV-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN10H220LDV-13?
DMN10H220LDV-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN10H220LDV-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN10H220LDV-13?
For technical support, including DMN10H220LDV-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN10H220LDV-13 requirements.
6.How does Aetrix verify that DMN10H220LDV-13 is sourced from the original manufacturer or authorized distributors?
All DMN10H220LDV-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN10H220LDV-13 meets industry standards.
7.What is the process for return or replacement of DMN10H220LDV-13?
All DMN10H220LDV-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN10H220LDV-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN10H220LDV-13 part is unused and in its original packaging.
Return procedure for DMN10H220LDV-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMN10H220LDV-13 Tags
-
SSM6N7002KFU,LF
Toshiba Semiconductor and Storage
-
2N7002DW-7-F
Diodes Incorporated
-
SSM6L56FE,LM
Toshiba Semiconductor and Storage
-
SSM6N37FU,LF
Toshiba Semiconductor and Storage
-
2N7002DWH6327XTSA1
Infineon Technologies
-
2N7002BKS,115
Nexperia USA Inc.
-
DMG1016UDW-7
Diodes Incorporated
-
UM6K33NTN
Rohm Semiconductor
-
DMG6602SVT-7
Diodes Incorporated
-
EM6K34T2CR
Rohm Semiconductor
-
UM6K34NTCN
Rohm Semiconductor
-
DMG6601LVT-7
Diodes Incorporated
Tech Hub
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
