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Diodes Incorporated DMN10H220LDV-7

Part No.:
DMN10H220LDV-7
Manufacturer:
Diodes Incorporated
Category:
FET, MOSFET Arrays
Package:
8-PowerVDFN
Datasheet:
AetrixDMN10H220LDV-7.pdf
Description:
MOSFET 2N-CH 100V PWRDI3333
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,222

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Product details

Overview

DMN10H220LDV-7 from Diodes Incorporated is a dual 100V N-channel enhancement-mode MOSFET in PowerDI3333-8 (Type UXC) package, rated for 10.5A continuous drain current at TC = +25°C, with RDS(ON) of 222 mΩ @ VGS = 10V and 270 mΩ @ VGS = 4.5V, designed for high-efficiency load switching in DC-DC converters and power distribution systems.

For engineers reviewing the DMN10H220LDV-7 datasheet, DMN10H220LDV-7 pinout, DMN10H220LDV-7 application, or DMN10H220LDV-7 equivalent, key selection criteria include its dual-channel layout, low gate charge (6.7 nC @ VGS = 10V), 100% UIS-tested ruggedness, thermal resistance of 3.12°C/W (junction-to-case), and AEC-Q101 readiness for automotive-grade power management.

Technical Context

This dual N-channel MOSFET integrates two independent 100V switches in a single compact PowerDI3333-8 package, sharing no internal connection between channels-enabling independent control of two power rails. Its gate threshold voltage (1–2.5 V) supports direct drive from 3.3V/5V logic, while low input capacitance (366 pF) and fast switching (tD(ON) = 6.2 ns, tF = 4.2 ns) reduce switching losses in high-frequency operation.

The device features a robust body diode with reverse recovery time of 20 ns and QRR of 11 nC, enabling efficient synchronous rectification or freewheeling in buck converters. Thermal design is supported by an exposed drain pad and low RθJC of 3.12°C/W, allowing up to 40 W power dissipation at TC = +25°C under proper heatsinking.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS100 V - Withstands up to 100V drain-source blocking voltage, suitable for 48V industrial and 12V/24V automotive power rails.
RDS(ON)222 mΩ @ VGS = 10V - Enables <1.2W conduction loss at 10.5A, critical for thermally constrained PCB layouts.
ID (continuous)10.5 A @ TC = +25°C - Supports high-current load switching without external heatsink when mounted on 2oz copper FR-4 with thermal bias.
Qg6.7 nC @ VGS = 10V - Reduces gate driver power demand and enables >1 MHz switching in high-efficiency SMPS designs.
tF4.2 ns - Minimizes turn-off energy loss, improving efficiency in hard-switched topologies like synchronous buck.
EAS1.1 mJ - Confirmed avalanche energy rating ensures reliable operation during inductive load transients without derating.
RθJC3.12 °C/W - Enables precise junction temperature estimation using case temperature measurement, simplifying thermal validation.

Pinout & Package

Package: PowerDI3333-8 (Type UXC), surface-mount, thermally enhanced with exposed drain pad. Molded green compound (UL 94V-0), matte tin annealed terminals, moisture sensitivity level 1.

Pin/TerminalCircuit RoleDesign Meaning
D1, D2Drain 1 / Drain 2High-side or low-side switch output nodes; internally isolated; each connects to exposed drain pad for thermal and electrical conduction.
S1, S2Source 1 / Source 2Return paths for respective channels; electrically separate; require individual PCB routing to avoid cross-talk or ground bounce.
G1, G2Gate 1 / Gate 2Independent control inputs; low gate threshold (1–2.5 V) allows direct microcontroller drive without level-shifting.

Key Features

FeatureDesign Value
100% UIS testedGuarantees unclamped inductive switching capability up to IAS = 4.7 A and EAS = 1.1 mJ, eliminating need for external snubbers in relay/motor drive circuits.
Low Ciss (366 pF)Reduces Miller effect and gate drive current requirements, enabling stable operation with low-power drivers and minimizing EMI in dense layouts.
Low leakage (IDSS ≤ 1 µA)Ensures minimal standby power loss in always-on systems such as automotive body controllers or IoT battery-backed modules.
Halogen- & antimony-freeMeets strict environmental compliance (Br+Cl < 1500 ppm, Sb < 1000 ppm), supporting automotive PPAP and industrial RoHS 3 requirements.

Applications

Automotive Body Control ModuleIndustrial DC-DC Load Switch

Use Scenario: Controlling headlight, wiper, and seat motor loads in 12V/24V vehicle architectures with centralized power distribution units.

IC Role / Device Role / Timing Role: Dual-channel high-side load switch managing independent 10A resistive/inductive loads with integrated avalanche ruggedness.

Use Value: Eliminates need for discrete flyback diodes and reduces BOM count by consolidating two switches into one thermally optimized package.

Use Scenario: Enabling/disabling auxiliary power rails in programmable logic controller (PLC) backplanes and industrial HMIs.

IC Role / Device Role / Timing Role: Precision-controlled power path switch with fast turn-on (6.2 ns delay) and low RDS(ON) to minimize voltage droop during hot-swap events.

Use Value: Maintains rail stability during dynamic load insertion, preventing brownout resets in real-time control subsystems.

Server PSU OR-ing CircuitUSB-C PD Power Path

Use Scenario: Parallel redundant 48V input rails in telecom/datacom power supplies requiring seamless failover and reverse current blocking.

IC Role / Device Role / Timing Role: Low-RDS(ON) N-channel MOSFET used in active OR-ing configuration with external gate control logic.

Use Value: Achieves <0.5% voltage drop at full load versus Schottky diode alternatives, reducing thermal load and improving system efficiency by >1.2%.

Use Scenario: Bidirectional power path management in USB-C PD sink applications where VBUS must be isolated during port negotiation or fault conditions.

IC Role / Device Role / Timing Role: Dual-channel switch isolating VBUS and CC lines with independent gate control for safe hot-plug sequencing.

Use Value: Enables compliant USB-C PD 3.1 sink behavior with <100 ns fault response, meeting USB-IF E-Marker timing requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel load switch applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMN10H220LSD-7Same die, SO-8 package; higher RθJA (110°C/W vs. 70°C/W); no exposed drain pad.Limited to lower-power applications (<3W ambient dissipation); unsuitable for automotive under-hood environments.Select when board space permits larger footprint and thermal budget exceeds 2.5W without heatsinking.
IPD30N10S3L-33Single-channel 100V OptiMOS™; RDS(ON) = 3.3 mΩ @ VGS = 10V; TO-252 package; higher current rating (30A).Requires two devices for dual functionality; superior conduction loss but larger board area and higher cost per channel.Select when maximum efficiency at >15A/channel is required and dual integration is not mandatory.

Compared with DMN10H220LDV-7, DMN10H220LSD-7 trades thermal performance for legacy SO-8 compatibility, while IPD30N10S3L-33 delivers lower RDS(ON) at the expense of dual integration and package size-making DMN10H220LDV-7 optimal for space-constrained, dual-rail 10A applications needing balanced conduction/switching loss.

Availability

DMN10H220LDV-7 is available at Aetrix Electronics and suitable for automotive body control modules, industrial DC-DC load switching, and server OR-ing circuits requiring stable component supply, AEC-Q101-aligned sourcing, and tape-and-reel delivery for SMT production.

Supply support for DMN10H220LDV-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and computing markets.

The DMN10H220LDV belongs to Diodes' PowerMOS™ dual-channel portfolio, engineered specifically for space-efficient, thermally robust load switching in next-generation 12V–48V power distribution architectures.

FAQ

What is the maximum operating junction temperature for DMN10H220LDV-7?

The absolute maximum junction temperature is +150°C, validated across the full operating range (–55°C to +150°C). Derating begins above +125°C per Figure 6 and Figure 7 in the datasheet, where RDS(ON) increases by ~1.8× from 25°C to 150°C at VGS = 10V, requiring thermal design margin for sustained 10.5A operation.

Can DMN10H220LDV-7 be used in high-side switch configurations?

Yes-it supports high-side switching when driven with appropriate gate voltage translation (e.g., bootstrap or charge-pump circuit), since its VGSS rating is ±20V and gate threshold is 1–2.5V. The dual-channel isolation prevents crosstalk, making it suitable for half-bridge upper-arm implementation with external level shifters.

Does DMN10H220LDV-7 meet AEC-Q101 qualification?

Yes-the device is qualified to AEC-Q101 Rev D for stress testing including HTGB, HTRB, AC/DC life test, and UIS. While not pre-certified for full PPAP, Diodes provides AEC-Q101 test reports and supports PPAP documentation upon request for automotive customers.

What is the recommended PCB pad layout for PowerDI3333-8 (Type UXC)?

Diodes specifies a thermally optimized footprint with 3.05 mm × 3.05 mm exposed drain pad (D1/D2 connection), 0.65 mm pitch for source/gate terminals, and solder mask defined pads per Package Outline Drawing DS42491. Minimum copper area beneath the pad is 1-inch² 2oz copper with thermal vias (≥8×0.3mm) to inner ground planes for RθJA ≤ 70°C/W.

DMN10H220LDV-7 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-PowerVDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual)
FET Feature:
-
Drain to Source Voltage (Vdss):
100V
Current - Continuous Drain (Id) @ 25°C:
10.5A (Tc)
Rds On (Max) @ Id, Vgs:
222mOhm @ 2A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
6.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
366pF @ 50V
Power - Max:
1.8W (Ta), 40W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PowerDI3333-8 (Type UXC)

DMN10H220LDV-7 FAQ

1.How can I place an order for DMN10H220LDV-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN10H220LDV-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN10H220LDV-7 reliable?

The price and inventory of DMN10H220LDV-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN10H220LDV-7 is usually 5 days.

3.What payment methods are accepted for DMN10H220LDV-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN10H220LDV-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN10H220LDV-7?

DMN10H220LDV-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN10H220LDV-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN10H220LDV-7?

For technical support, including DMN10H220LDV-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN10H220LDV-7 requirements.

6.How does Aetrix verify that DMN10H220LDV-7 is sourced from the original manufacturer or authorized distributors?

All DMN10H220LDV-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN10H220LDV-7 meets industry standards.

7.What is the process for return or replacement of DMN10H220LDV-7?

All DMN10H220LDV-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN10H220LDV-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN10H220LDV-7 part is unused and in its original packaging.

Return procedure for DMN10H220LDV-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMN10H220LDV-7 Tags

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