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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMN10H220LFDF-13

Name: DMN10H220LFDF-13
Brand: Diodes Incorporated
SKU: DMN10H220LFDF-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN10H220LFDF-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 6-UDFN Exposed Pad

Datasheet:: DMN10H220LFDF-13.pdf

Description:: MOSFET BVDSS: 61V~100V U-DFN2020

Quantity:: RFQ Add To RFQ list

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Product details

Overview

DMN10H220LFDF-13 from Diodes Incorporated is a 100V N-channel enhancement-mode MOSFET in U-DFN2020-6 (Type F) package, optimized for load switching with R_DS(ON) = 225 mΩ @ V_GS = 10 V, I_D = 2.2 A at T_A = +25°C, and 100% production-tested UIS capability - deployed in compact DC-DC converter power stages and USB-C PD port protection circuits.

For engineers reviewing the DMN10H220LFDF-13 datasheet, DMN10H220LFDF-13 pinout, DMN10H220LFDF-13 application, or DMN10H220LFDF-13 equivalent, key selection criteria include its low 217 mΩ R_DS(ON) @ 4.5 V gate drive, 384 pF C_iss, 6.7 nC total gate charge at 10 V, and validated performance across –55°C to +150°C junction temperature range.

Technical Context

This MOSFET employs planar trench-gate technology to achieve balanced conduction loss and switching speed, supporting high-frequency operation up to 1 MHz in synchronous buck converters. Its body diode exhibits t_RR = 20 ns and Q_RR = 11 nC under 100 A/µs dI/dt, enabling efficient reverse recovery in bidirectional power paths.

The device features ±20 V gate-source voltage rating, 100 V drain-source breakdown, and thermal resistance R_θJA = 80 °C/W on FR-4 with 1-inch² copper pad - confirming suitability for thermally constrained space-constrained applications such as portable battery management and industrial IoT edge nodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - supports input rails up to 48 V nominal with 2× safety margin in industrial power supplies
R_DS(ON) @ 10 V	225 mΩ - enables ≤0.5 W conduction loss at 2.2 A continuous current in load switch mode
R_DS(ON) @ 4.5 V	290 mΩ - ensures reliable turn-on with 3.3 V logic-level gate drivers in USB-C PD controllers
C_iss	384 pF - reduces gate drive power requirement and improves EMI profile in 500 kHz–1 MHz SMPS designs
Q_g @ 10 V	6.7 nC - allows fast 6.2 ns turn-on delay and 8.7 ns rise time with 6.8 Ω external gate resistor
E_AS	1.1 mJ - withstands repetitive inductive energy spikes in motor driver H-bridge freewheeling paths
T_J Range	–55°C to +150°C - qualified for extended-temperature operation in automotive cabin electronics and outdoor telecom equipment

Pinout & Package

U-DFN2020-6 (Type F) surface-mount package: 2.0 mm × 2.0 mm footprint, 0.6 mm nominal height, NiPdAu-plated copper leadframe, moisture sensitivity level 1, UL 94V-0 rated molding compound.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Bottom View)	Source (S)	Low-side return path; internally connected to exposed thermal pad for enhanced heat dissipation
Pin 2	Gate (G)	Control input; requires <2.5 V threshold to initiate conduction; driven by microcontroller GPIO or dedicated gate driver
Pin 3	Drain (D)	High-side power node; connects to input rail or inductive load; carries full switched current
Pin 4	Source (S)	Redundant source connection; electrically tied to Pin 1 and thermal pad to minimize source inductance
Pin 5	Drain (D)	Redundant drain connection; paralleled with Pin 3 to reduce package resistance and improve current sharing
Pin 6	Gate (G)	Redundant gate connection; used for Kelvin gate sensing or noise immunity in high-dV/dt environments

Key Features

Feature	Design Value
100% UIS tested	Guarantees robustness against unclamped inductive switching events without derating in motor control or solenoid drive
Low C_iss/C_oss ratio	384 pF / 23 pF = 16.7 - improves Miller immunity and reduces gate oscillation risk in high-speed switching
Green compound & RoHS3 compliant	Halogen-free (<900 ppm Br+Cl), antimony-free (<1000 ppm), lead-free - meets IPC-J-STD-609A Class 3 requirements
Thermal resistance R_θJC	12 °C/W - enables direct thermal coupling to PCB copper pour, reducing junction-to-board ΔT by >40% vs. SO-8 equivalents
Body diode V_SD	0.8–1.3 V @ 2 A - lower forward drop than discrete Schottky alternatives, improving efficiency in reverse-current paths

Applications

USB-C Power Delivery Port Protection

Industrial Sensor Node Power Switching

Use Scenario: Isolating VBUS during cable insertion/removal and fault conditions in USB-C receptacles.

IC Role / Device Role: Low-side load switch controlling power delivery path between controller IC and connector.

Use Value: 290 mΩ R_DS(ON) @ 4.5 V ensures <150 mW loss at 2 A while maintaining compatibility with 3.3 V host MCU GPIOs.

Use Scenario: Enabling/disabling power to analog front-end circuitry in battery-powered environmental sensors.

IC Role / Device Role: High-efficiency power gate managing sleep/wake transitions and leakage minimization.

Use Value: 1 µA I_DSS at 100 V and 100 nA I_GSS extend battery life beyond 10 years in ultra-low-power duty cycles.

Compact DC-DC Converter High-Side Switch

Automotive Body Control Module Load Driver

Use Scenario: Synchronous rectification in 12 V → 3.3 V buck converters for infotainment subsystems.

IC Role / Device Role: Secondary-side power switch replacing Schottky diode to improve conversion efficiency.

Use Value: 225 mΩ R_DS(ON) cuts conduction loss by 65% versus 400 mΩ discrete MOSFETs, raising efficiency from 87% to 92% at 1 A.

Use Scenario: Driving LED lighting loads and small relays in vehicle door modules and mirror controls.

IC Role / Device Role: Protected load driver interfacing with CAN/LIN microcontrollers via 5 V logic.

Use Value: 100% UIS qualification and –55°C to +150°C operation ensure reliability across automotive thermal cycling and load dump transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3020LFG-7	R_DS(ON) = 30 mΩ @ 4.5 V, but V_DSS = 30 V - unsuitable for >40 V systems	Limited to 5 V–12 V consumer power rails; cannot replace in 48 V industrial or automotive inputs	Select only when system V_IN ≤ 24 V and sub-100 mΩ R_DS(ON) is mandatory for <1 W loss budget
SI2302DS-T1-BE3	R_DS(ON) = 55 mΩ @ 4.5 V, V_DSS = 20 V, SOT-23 package - higher R_θJA = 220 °C/W	Lower thermal performance limits continuous current to 1.2 A on standard PCB; no UIS rating	Acceptable for cost-sensitive 3.3 V/5 V logic-level switching where transient robustness is not required

Compared with DMN3020LFG-7 and SI2302DS-T1-BE3, the DMN10H220LFDF-13 uniquely delivers 100 V rating, production-tested UIS, and 80 °C/W thermal resistance in a 2 mm × 2 mm footprint - making it the only viable option for ruggedized 48 V load switching in space-constrained industrial and automotive domains.

Availability

DMN10H220LFDF-13 is available at Aetrix Electronics and suitable for USB-C power delivery port protection, industrial sensor node power gating, and compact DC-DC converter high-side switching requiring stable component supply across multi-year production cycles.

Supply support for DMN10H220LFDF-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations spanning Asia, Europe, and North America.

This MOSFET belongs to Diodes' "PowerMOS" portfolio, engineered specifically for high-efficiency, space-constrained power management in industrial, computing, and automotive applications - emphasizing low R_DS(ON), fast switching, and robust transient handling.

FAQ

What is the maximum continuous drain current at 70°C ambient?

The DMN10H220LFDF-13 supports 1.7 A continuous drain current at T_A = +70°C with 2 oz copper FR-4 board and minimum recommended pad layout. This derating reflects thermal limits imposed by R_θJA = 110 °C/W under baseline conditions - actual current may increase to 1.0 A with enhanced copper area per Note 6.

Does this MOSFET require a gate resistor for stability?

Yes - a 6.8 Ω series gate resistor is specified in the datasheet for switching characterization (t_D(ON), t_R). It suppresses ringing caused by L_g–C_iss resonance and prevents shoot-through in half-bridge configurations. Values between 4.7 Ω and 10 Ω balance switching speed and EMI control.

Is the exposed thermal pad electrically connected?

Yes - the bottom-side thermal pad is internally connected to the Source (S) terminals (Pins 1 and 4). It must be soldered to a PCB copper pour tied to the system ground plane to achieve rated R_θJA = 80 °C/W and ensure mechanical reliability per J-STD-020 Level 1 moisture handling.

Can this device be used in linear (analog) regulation mode?

No - the DMN10H220LFDF-13 is not characterized or guaranteed for linear-mode operation. Its Safe Operating Area (SOA) curve shows DC limitation at V_DS < 10 V and I_D < 0.3 A, and prolonged operation in the linear region risks thermal runaway due to positive R_DS(ON) temperature coefficient above 100°C.

DMN10H220LFDF-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 6-UDFN Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 2.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 225mOhm @ 2A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 6.7 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 384 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 1.1W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: U-DFN2020-6 (Type F)

DMN10H220LFDF-13 FAQ

1.How can I place an order for DMN10H220LFDF-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN10H220LFDF-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN10H220LFDF-13 reliable?

The price and inventory of DMN10H220LFDF-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN10H220LFDF-13 is usually 5 days.

3.What payment methods are accepted for DMN10H220LFDF-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN10H220LFDF-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN10H220LFDF-13?

DMN10H220LFDF-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN10H220LFDF-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN10H220LFDF-13?

For technical support, including DMN10H220LFDF-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN10H220LFDF-13 requirements.

6.How does Aetrix verify that DMN10H220LFDF-13 is sourced from the original manufacturer or authorized distributors?

All DMN10H220LFDF-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN10H220LFDF-13 meets industry standards.

7.What is the process for return or replacement of DMN10H220LFDF-13?

All DMN10H220LFDF-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN10H220LFDF-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN10H220LFDF-13 part is unused and in its original packaging.

Return procedure for DMN10H220LFDF-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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