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Diodes Incorporated DMN10H220LFDF-7
- Part No.:
- DMN10H220LFDF-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DMN10H220LFDF-7.pdf
- Description:
- MOSFET BVDSS: 61V~100V U-DFN2020
- Quantity:
- Payment:
- Shipping:
Inventory:658
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Product details
Overview
DMN10H220LFDF-7 from Diodes Incorporated is a 100V N-channel enhancement-mode MOSFET in U-DFN2020-6 (Type F) package, optimized for load switching with RDS(ON) = 225 mΩ @ VGS = 10 V, ID = 2.2 A at TA = +25°C, and 100% production-tested UIS capability. It serves as a compact, high-efficiency power switch in space-constrained DC-DC converters and battery protection circuits.
For engineers reviewing the DMN10H220LFDF-7 datasheet, DMN10H220LFDF-7 pinout, DMN10H220LFDF-7 application, or DMN10H220LFDF-7 equivalent, key selection criteria include its low gate charge (Qg = 6.7 nC @ VGS = 10 V), fast switching (tF = 4.2 ns), and thermal resistance (RθJA = 80 °C/W on 1-inch² copper), critical for thermally dense portable power designs.
Technical Context
This MOSFET employs planar trench-gate technology to balance low RDS(ON) and controlled gate charge, enabling efficient operation in 5–12 V input systems where VGS = 4.5 V drive is standard. Its body diode exhibits tRR = 20 ns and QRR = 11 nC, supporting synchronous rectification in buck topologies.
The device is characterized for operation across –55°C to +150°C junction temperature, with normalized RDS(ON) variation ≤2.4× over that range at VGS = 4.5 V/1 A. Its U-DFN2020-6 package delivers 0.0065 g mass and 12 °C/W RθJC, facilitating direct thermal coupling to PCB copper.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100 V - Supports input rails up to 80 V DC with 20% margin for transient spikes in industrial power supplies. |
| RDS(ON) | 225 mΩ @ VGS = 10 V, ID = 2 A - Limits conduction loss to ≤1 mW per mA of load current at full rating. |
| Qg | 6.7 nC @ VGS = 10 V - Enables <100 ns total switching time with 6.8 Ω gate resistor, reducing dynamic losses in 500 kHz+ SMPS. |
| tF | 4.2 ns - Minimizes overlap loss during turn-off, critical for high-frequency synchronous buck controllers. |
| IAS | 4.7 A - Withstands 0.1 mH inductive kickback events without failure, qualifying for unclamped inductive load switching. |
| RθJA | 80 °C/W - Achieved on FR-4 with 1-inch² copper pad; allows 1.6 W continuous dissipation at TA = +70°C. |
| Ciss | 384 pF - Low input capacitance reduces gate drive power and improves EMI profile in noise-sensitive applications. |
Pinout & Package
Package: U-DFN2020-6 (Type F), 2.0 mm × 2.0 mm × 0.6 mm, bottom-exposed drain pad, RoHS-compliant NiPdAu-plated terminals, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (G) | Gate | Control terminal; accepts 0–10 V logic-level drive; 2.4 Ω gate resistance minimizes ringing with standard gate drivers. |
| Pins 2, 3, 4, 5 (S) | Source | Power return path; four parallel terminals reduce source inductance and improve current sharing in high-di/dt loads. |
| Pin 6 (D) | Drain | Main power output; connected to exposed thermal pad for low RθJC; requires solder mask defined pad for reliable thermal transfer. |
Key Features
| Feature | Design Value |
|---|---|
| 100% UIS tested | Guarantees robustness against inductive energy dump without derating, eliminating need for external snubbers in solenoid drivers. |
| Low Ciss/Coss ratio | Ciss = 384 pF, Coss = 23 pF - Improves hard-switching efficiency and reduces voltage overshoot during turn-off. |
| Green compound | Halogen- and antimony-free molding (Br+Cl < 1500 ppm, Sb < 1000 ppm) - Meets automotive and medical environmental compliance mandates. |
| Fast body diode | tRR = 20 ns, QRR = 11 nC - Enables use as freewheeling element in high-frequency buck converters without added Schottky. |
Applications
| Battery Protection Circuit | USB Power Delivery Switch |
|---|---|
|
Use Scenario: Reverse-polarity and overcurrent protection in single-cell Li-ion battery packs for wearables. IC Role / Device Role / Timing Role: High-side load switch controlling main power path; activated by system MCU GPIO. Use Value: 225 mΩ RDS(ON) limits voltage drop to <225 mV at 1 A, preserving battery runtime and enabling accurate fuel gauging. |
Use Scenario: VBUS enable/disable in USB-C PD 3.0 sink ports requiring 20 V tolerance. IC Role / Device Role / Timing Role: Primary power switch isolating downstream circuitry during fault conditions or port negotiation. Use Value: 100 V VDSS provides 2× margin over 20 V PD max, while 4.2 ns tF ensures clean transitions during hot-plug events. |
| Industrial Sensor Node Power Rail | Compact DC-DC Converter High-Side Switch |
|
Use Scenario: Always-on power management for LoRaWAN sensor nodes with intermittent wake-up cycles. IC Role / Device Role / Timing Role: Low-leakage (IDSS ≤ 1 µA) disconnect switch minimizing quiescent current in sleep mode. Use Value: Sub-µA off-state leakage extends 10-year battery life targets; U-DFN2020-6 footprint saves >60% board area vs. SO-8 alternatives. |
Use Scenario: High-side switch in 36 V input, 5 V output synchronous buck converter for PLC I/O modules. IC Role / Device Role / Timing Role: Main power transistor operating at 300 kHz with VGS = 10 V gate drive from integrated controller. Use Value: 6.7 nC Qg reduces gate driver loss to <15 mW, contributing to ≥92% full-load efficiency at 2 A output. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3026LFG-7 | RDS(ON) = 30 mΩ @ VGS = 10 V, but VDSS = 30 V - unsuitable for >30 V systems. | Limited to 5–12 V input rails; cannot replace DMN10H220LFDF-7 in 48 V industrial or automotive auxiliary supplies. | Select only when system VIN ≤ 24 V and lower RDS(ON) justifies higher cost and larger U-DFN2030-6 footprint. |
| SI2302DS-T1-GE3 | RDS(ON) = 80 mΩ @ VGS = 4.5 V, VDSS = 20 V, Qg = 3.5 nC - lower gate charge but insufficient voltage rating. | Not rated for 100 V transients; fails under ISO 7637-2 pulse 1/2a in automotive environments. | Acceptable only for consumer-grade 5 V/12 V logic-level switching where 100 V robustness is unnecessary. |
Compared with DMN3026LFG-7 and SI2302DS-T1-GE3, the DMN10H220LFDF-7 uniquely combines 100 V rating, sub-250 mΩ RDS(ON) at 4.5 V drive, and production UIS validation-making it the sole option for compact, high-voltage load switching in space- and reliability-critical embedded systems.
Availability
DMN10H220LFDF-7 is available at Aetrix Electronics and suitable for battery protection circuits, USB-C power delivery switches, and industrial sensor node power rails requiring stable component supply and long-term lifecycle support.
Supply support for DMN10H220LFDF-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal solutions, with design centers across Asia, Europe, and the US, and manufacturing in IATF 16949-certified facilities.
This MOSFET belongs to Diodes' "PowerMOS" product line, engineered specifically for high-efficiency, low-footprint load switching in portable, industrial, and automotive power management systems.
FAQ
What is the maximum continuous drain current at 70°C ambient?
The DMN10H220LFDF-7 supports 1.7 A continuous drain current at TA = +70°C with standard FR-4 PCB layout (2 oz copper, 1-inch² pad). This rating assumes no forced airflow and accounts for thermal derating due to increased RθJA at elevated temperatures.
Is this MOSFET qualified for automotive applications?
No-DMN10H220LFDF-7 is not AEC-Q101 qualified. Diodes offers automotive-grade variants (e.g., DMN10H220LFDFQ-7) with PPAP documentation, IATF 16949 manufacturing, and extended temperature screening; consult Diodes' automotive product definitions page for qualification details.
What is the recommended PCB pad layout for thermal performance?
Use the U-DFN2020-6 (Type F) suggested pad layout from Diodes' package outline document, featuring a 1.95 mm × 1.95 mm thermal pad with 4–6 solder paste apertures and thermal vias to inner ground planes. This achieves the specified RθJA = 80 °C/W on 2 oz copper.
Does the device include integrated ESD protection on gate terminals?
Yes-the gate oxide is rated for ±20 V VGSS, and the device passes HBM ESD testing per JESD22-A114 (≥2 kV). No external gate protection resistors are required for typical logic-level drive, though a 10 Ω series resistor is recommended for high-noise environments.
DMN10H220LFDF-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 225mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 6.7 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 384 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.1W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type F)
DMN10H220LFDF-7 FAQ
1.How can I place an order for DMN10H220LFDF-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN10H220LFDF-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN10H220LFDF-7 reliable?
The price and inventory of DMN10H220LFDF-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN10H220LFDF-7 is usually 5 days.
3.What payment methods are accepted for DMN10H220LFDF-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN10H220LFDF-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN10H220LFDF-7?
DMN10H220LFDF-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN10H220LFDF-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN10H220LFDF-7?
For technical support, including DMN10H220LFDF-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN10H220LFDF-7 requirements.
6.How does Aetrix verify that DMN10H220LFDF-7 is sourced from the original manufacturer or authorized distributors?
All DMN10H220LFDF-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN10H220LFDF-7 meets industry standards.
7.What is the process for return or replacement of DMN10H220LFDF-7?
All DMN10H220LFDF-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN10H220LFDF-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN10H220LFDF-7 part is unused and in its original packaging.
Return procedure for DMN10H220LFDF-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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