Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated DMN10H220LFVW-7

Part No.:
DMN10H220LFVW-7
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
8-PowerVDFN
Datasheet:
AetrixDMN10H220LFVW-7.pdf
Description:
MOSFET BVDSS: 61V~100V POWERDI33
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,318

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

DMN10H220LFVW-7 from Diodes Incorporated is a 100V N-channel enhancement-mode MOSFET in PowerDI3333-8 package, rated for 11A continuous drain current at TC = +25°C, with RDS(ON) of 222 mΩ @ VGS = 10V and 270 mΩ @ VGS = 4.5V, optimized for high-efficiency load switching in automotive and industrial power rails.

For engineers reviewing the DMN10H220LFVW-7 datasheet, DMN10H220LFVW-7 pinout, DMN10H220LFVW-7 application, or DMN10H220LFVW-7 equivalent, key selection criteria include its wettable flank design for automated optical inspection, 100% UIS-tested ruggedness, low gate charge (6.7 nC @ VGS = 10V), and AEC-Q101 readiness for automotive-grade reliability validation.

Technical Context

This MOSFET employs a trench-gate silicon process to achieve low RDS(ON) while maintaining fast switching (tD(ON) = 6.2 ns, tF = 4.2 ns) and low dynamic losses. Its 366 pF input capacitance and 12 pF reverse transfer capacitance support stable gate drive in high-frequency DC-DC and load-switch topologies.

The device features an integrated body diode with 1.3 V forward voltage at 2 A and 20 ns reverse recovery time, enabling efficient synchronous rectification and bidirectional current handling in compact power stages without external diode supplementation.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 100 V - supports 48 V and 60 V nominal bus systems with 20 % margin for transients
RDS(ON) 222 mΩ @ VGS = 10 V - enables ≤2.5 W conduction loss at 11 A in thermally constrained layouts
ID (continuous) 11 A @ TC = +25°C - delivers full-rated current with minimal heatsinking on PCB copper pads
Qg 6.7 nC @ VGS = 10 V - reduces gate driver power demand and switching transition time in 500 kHz–1 MHz designs
RθJC 3.02 °C/W - allows direct thermal coupling to PCB ground plane for efficient junction-to-board heat transfer
tRR 20 ns - minimizes body diode recovery loss during hard commutation in buck or half-bridge configurations
EAS 1.1 mJ - withstands repetitive unclamped inductive switching events up to L = 0.1 mH without failure

Pinout & Package

Package: PowerDI3333-8 (SWP), surface-mount, wettable flank, exposed drain pad for thermal and electrical connection. Molded plastic case with matte tin–annealed copper leadframe, UL 94V-0 rated.

Pin/Terminal Circuit Role Design Meaning
Drain (D) Main current path output terminal Connected to exposed bottom pad; carries full load current and serves as primary thermal path to PCB
Source (S) Reference node for gate control and current return Three internal source leads reduce parasitic inductance and improve current sharing in high-di/dt operation
Gate (G) Control electrode for channel modulation Low 2.4 Ω gate resistance enables stable, damped turn-on/turn-off without external gate resistor in many applications

Key Features

Feature Design Value
Wettable flank terminals Enables 100 % automated optical inspection (AOI) of solder joint integrity on all three side pins
100 % UIS tested Guarantees robustness against inductive energy spikes in motor drivers and solenoid controls without derating
Low Ciss/Crss ratio 366 pF / 12 pF = 30.5 - improves Miller immunity and reduces risk of false turn-on in high-dV/dt environments
AEC-Q101 qualified Validated per stress test requirements for automotive under-hood and body electronics applications
Halogen- and antimony-free Meets <900 ppm Br, <900 ppm Cl, <1000 ppm Sb - compliant with global green manufacturing mandates

Applications

Automotive Body Control Module (BCM) Industrial PLC Output Stage

Use Scenario: Switching 12 V/24 V loads such as door locks, interior lighting, and HVAC actuators.

IC Role / Device Role / Timing Role: High-side load switch with integrated protection and diagnostic capability via VGS monitoring.

Use Value: Wettable flank ensures AOI pass rate >99.9 % in high-volume SMT lines; 100 V rating accommodates load dump transients up to ISO 7637-2 Pulse 5a.

Use Scenario: Driving 24 V solenoids, relays, and indicator LEDs in programmable logic controller outputs.

IC Role / Device Role / Timing Role: Low-loss discrete switch replacing mechanical contacts, controlled by microcontroller GPIO with level-shifting.

Use Value: 222 mΩ RDS(ON) limits self-heating to <1.5 W at 8 A, eliminating need for heatsinks in DIN-rail mounted enclosures.

USB-C Power Delivery Sink Server Board Management Controller (BMC)

Use Scenario: Reverse-polarity and overvoltage protection in 20 V USB PD 3.0 sink paths.

IC Role / Device Role / Timing Role: Back-to-back N-channel configuration for bidirectional blocking and fast fault response.

Use Value: 20 ns tRR and 1.3 V VSD minimize conduction loss during CC line negotiation and VCONN supply switching.

Use Scenario: Hot-swap control for redundant fan modules and sensor interface power domains.

IC Role / Device Role / Timing Role: Soft-start enabled load switch with current limiting and thermal foldback.

Use Value: 3.02 °C/W RθJC enables accurate die temperature sensing via VGS(TH) drift tracking for predictive thermal shutdown.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel load switch applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMN10H220LQ-7 Same die, QFN-8 package (no wettable flank), RθJA = 60 °C/W vs. 53 °C/W Lacks AOI-compatible side terminals; suited for space-constrained but non-AOI production Select when board-level reflow yield is prioritized over post-solder inspection coverage
IPD220N10N3GATMA1 100 V, 220 mΩ @ 10 V, but higher Qg = 12.5 nC and no UIS rating Requires external avalanche protection circuitry in inductive load applications Choose only if gate drive strength exceeds 2 A peak and system-level transient suppression is already implemented

Compared with DMN10H220LFVW-7, DMN10H220LQ-7 trades AOI capability for smaller footprint, while IPD220N10N3GATMA1 offers similar RDS(ON) but demands additional protection design effort and higher gate drive power.

Availability

DMN10H220LFVW-7 is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC output stages, and USB-C power delivery protection circuits requiring stable component supply across multi-year production cycles.

Supply support for DMN10H220LFVW-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management and signal integrity solutions for automotive, industrial, and computing markets.

This MOSFET belongs to Diodes' PowerDI® load switch portfolio, engineered specifically for robust, high-yield surface-mount deployment in automotive and industrial applications where AOI compatibility and transient ruggedness are mandatory.

FAQ

What is the maximum safe operating temperature for DMN10H220LFVW-7?

The device supports junction temperatures from –55°C to +150°C. At TJ = 150°C, RDS(ON) increases by ~1.8× versus 25°C (per Figure 6), so thermal design must ensure TJ stays ≤135°C under worst-case ambient and power dissipation to maintain margin. Derating curves in Figure 12 define safe pulse limits.

Does DMN10H220LFVW-7 require a gate resistor for stability?

A gate resistor is not required for basic switching due to its low 2.4 Ω intrinsic gate resistance and favorable Ciss/Crss ratio. However, a 5–10 Ω series resistor is recommended when driving from weak GPIOs or in noisy environments to damp ringing and prevent unintended turn-on from dv/dt coupling.

Can DMN10H220LFVW-7 be used in parallel configurations?

Yes - its positive temperature coefficient of RDS(ON) (Figure 5) enables natural current sharing. For two devices, ensure matched layout symmetry, identical gate drive routing, and shared source Kelvin sensing to avoid imbalance. Derate total current by 15 % for thermal margin in parallel operation.

Is the exposed drain pad electrically isolated from other terminals?

No - the exposed drain pad is internally connected to all three drain terminals and forms the primary current and thermal path. It must be soldered to a dedicated PCB copper pour tied to the system's high-side power rail, with no isolation or thermal vias to other layers unless explicitly designed for controlled thermal spreading.

DMN10H220LFVW-7 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-PowerVDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
11A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
222mOhm @ 2A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
6.7 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
366 pF @ 50 V
FET Feature:
-
Power Dissipation (Max):
2.4W (Ta), 41W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount, Wettable Flank
Supplier Device Package:
PowerDI3333-8 (SWP) Type UX

DMN10H220LFVW-7 FAQ

1.How can I place an order for DMN10H220LFVW-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN10H220LFVW-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN10H220LFVW-7 reliable?

The price and inventory of DMN10H220LFVW-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN10H220LFVW-7 is usually 5 days.

3.What payment methods are accepted for DMN10H220LFVW-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN10H220LFVW-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN10H220LFVW-7?

DMN10H220LFVW-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN10H220LFVW-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN10H220LFVW-7?

For technical support, including DMN10H220LFVW-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN10H220LFVW-7 requirements.

6.How does Aetrix verify that DMN10H220LFVW-7 is sourced from the original manufacturer or authorized distributors?

All DMN10H220LFVW-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN10H220LFVW-7 meets industry standards.

7.What is the process for return or replacement of DMN10H220LFVW-7?

All DMN10H220LFVW-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN10H220LFVW-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN10H220LFVW-7 part is unused and in its original packaging.

Return procedure for DMN10H220LFVW-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMN10H220LFVW-7 Tags

  • DMN10H220LFVW-7
  • DMN10H220LFVW-7 PDF
  • DMN10H220LFVW-7 Datasheet
  • DMN10H220LFVW-7 Specifications
  • DMN10H220LFVW-7 Images
  • Diodes Incorporated
  • Diodes Incorporated DMN10H220LFVW-7
  • Buy DMN10H220LFVW-7
  • DMN10H220LFVW-7 Price
  • DMN10H220LFVW-7 Distributor
  • DMN10H220LFVW-7 Supplier
  • DMN10H220LFVW-7 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER