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Diodes Incorporated DMN10H220LPDW-13

Part No.:
DMN10H220LPDW-13
Manufacturer:
Diodes Incorporated
Category:
FET, MOSFET Arrays
Package:
8-PowerTDFN
Datasheet:
AetrixDMN10H220LPDW-13.pdf
Description:
MOSFET 2N-CH 100V 8A PWRDI50
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,191

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Product details

Overview

DMN10H220LPDW-13 from Diodes Incorporated is a 100V N-channel enhancement-mode MOSFET in PowerDI5060-8 (SWP) package, optimized for high-efficiency load switching with RDS(ON) = 222 mΩ @ VGS = 10 V, ID = 8.0 A, and 100% UIS-tested ruggedness. It serves as a primary power switch in DC-DC converters, USB PD adapters, and industrial power supplies where low conduction loss and fast switching are critical.

For engineers reviewing the DMN10H220LPDW-13 datasheet, DMN10H220LPDW-13 pinout, DMN10H220LPDW-13 application, or DMN10H220LPDW-13 equivalent, key selection criteria include its 270 mΩ RDS(ON) at 4.5 V gate drive, 384 pF Ciss, wettable flank terminals for automated optical inspection, and AEC-Q101 readiness for automotive-grade designs.

Technical Context

This MOSFET employs a trench-gate silicon process to achieve low RDS(ON) while maintaining robust avalanche capability (EAS = 1.1 mJ). Its gate threshold voltage (VGS(TH) = 1–2.5 V) enables reliable turn-on with standard logic-level drivers, and its low Qg (6.7 nC @ 10 V) supports high-frequency PWM operation up to 1 MHz.

The PowerDI5060-8 package integrates an exposed drain pad for thermal performance (RθJC = 5.8 °C/W), and its dual-source/dual-drain configuration (S1/D2/D1/G2/D1/D2/G1/S2) supports paralleling or half-bridge layouts without external layout rework. Body diode tRR = 20 ns ensures minimal reverse recovery loss in synchronous rectification.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS100 V - Supports 48 V industrial bus and 60 V automotive systems with margin.
RDS(ON) @ 10 V222 mΩ - Enables ≤1.77 W conduction loss at 8 A continuous current.
RDS(ON) @ 4.5 V270 mΩ - Ensures functional switching with 3.3 V/5 V microcontroller GPIOs.
Ciss384 pF - Limits gate drive power requirement to <10 mW at 500 kHz.
tR/tF8.7 ns / 4.2 ns - Allows clean edge transitions in hard-switched topologies.
EAS1.1 mJ - Withstands inductive kickback in motor drives and solenoid controls.
Qg @ 10 V6.7 nC - Reduces gate driver IC sizing and PCB area vs. comparable 100 V MOSFETs.

Pinout & Package

Package: PowerDI5060-8 (SWP), surface-mount, thermally enhanced with exposed drain pad and wettable flank leads for solder joint inspection.

Pin/TerminalCircuit RoleDesign Meaning
S1, S2Source terminalsDual-source configuration lowers source inductance and improves current sharing in high-di/dt applications.
D1, D2Drain terminalsParallel drain connections reduce channel resistance and enhance thermal spreading across the exposed pad.
G1, G2Gate terminalsIndependent gate inputs allow differential drive or redundancy; matched layout minimizes gate loop asymmetry.

Key Features

FeatureDesign Value
100% UIS testedGuarantees single-pulse avalanche energy handling (IAS = 4.7 A, EAS = 1.1 mJ) without derating.
Wettable flank leadsEnables AOI verification of solder fillet height on both side and bottom edges-critical for automotive PPAP compliance.
Low Coss (23 pF)Reduces Miller plateau time and improves light-load efficiency in flyback and LLC resonant converters.
Lead-free & halogen-freeMeets IPC-J-STD-020 Level 1 moisture sensitivity and RoHS 3 (2015/863/EU) requirements out-of-box.

Applications

USB-C Power Delivery AdapterIndustrial 24 V DC-DC Converter

Use Scenario: High-side main switch in 100 W USB-C PD buck-boost stage operating at 300 kHz.

IC Role / Device Role: Primary power switch managing bidirectional 5–20 V output regulation under dynamic load steps.

Use Value: 270 mΩ RDS(ON) at 4.5 V gate drive enables direct control by USB PD controller's 3.3 V GPIO, eliminating level-shifter circuitry.

Use Scenario: Low-side synchronous rectifier in isolated 24 V input, 5 V/10 A output forward converter.

IC Role / Device Role: Secondary-side power switch replacing Schottky diode to improve efficiency above 85% at full load.

Use Value: 20 ns body diode tRR and 0.8–1.3 V VSD minimize reverse recovery loss and conduction drop vs. discrete diodes.

Automotive Body Control ModuleSmart Home Energy Monitor

Use Scenario: Load switch for 12 V/24 V lighting and actuator circuits in AEC-Q101-compliant BCMs.

IC Role / Device Role: Protected high-side switch with integrated overcurrent and thermal foldback via external sense resistor.

Use Value: 100% UIS qualification ensures survival during battery disconnect transients (ISO 7637-2 Pulse 5a), reducing need for external TVS.

Use Scenario: Isolated mains-side power switch controlling AC-DC auxiliary supply in smart metering hubs.

IC Role / Device Role: Solid-state relay replacement enabling zero-crossing switching and remote ON/OFF via MCU.

Use Value: 5.8 °C/W RθJC allows >3 W dissipation with minimal heatsinking-reducing BOM cost vs. opto-triac solutions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel load switch applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMN3029LSD-1330 V VDSS, 2.9 mΩ RDS(ON) @ 10 V, SO-8 packageLimited to ≤30 V systems; unsuitable for 48 V bus or automotive 24 V loads.Select only for low-voltage (<30 V), high-current (≥20 A) applications where thermal budget permits larger footprint.
IPB180N10N3G100 V VDSS, 1.8 mΩ RDS(ON) @ 10 V, TO-263-7 packageHigher gate charge (Qg = 92 nC), no wettable flanks, requires heatsink for >5 A continuous.Prefer for high-power (>100 W), low-frequency (<100 kHz) applications where conduction loss dominates over switching loss.

Compared with DMN3029LSD-13 and IPB180N10N3G, DMN10H220LPDW-13 uniquely balances 100 V rating, logic-level drive compatibility, wettable flank inspection, and compact PowerDI5060-8 footprint-making it optimal for space-constrained, medium-power, automotive-qualified designs.

Availability

DMN10H220LPDW-13 is available at Aetrix Electronics and suitable for USB-C power delivery adapters, industrial 24 V DC-DC converters, and automotive body control modules requiring stable component supply across multi-year production cycles.

Supply support for DMN10H220LPDW-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

This device belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-reliability, high-efficiency power switching in automotive, industrial, and computing applications where ruggedness, thermal performance, and AEC-Q101 compliance are mandatory.

FAQ

What is the maximum continuous drain current at TC = +70°C?

The DMN10H220LPDW-13 supports 6.4 A continuous drain current at case temperature +70°C, per its Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerDI5060-8 package and must be validated against actual board layout, copper area, and ambient conditions using the provided RθJA = 57 °C/W and RθJC = 5.8 °C/W values.

Does this MOSFET have a built-in body diode, and what is its forward voltage?

Yes, it includes an intrinsic body diode with typical forward voltage VSD = 0.8 V at IS = 2 A and TJ = 25°C, rising to 1.3 V maximum. The diode is rated for 8.0 A continuous forward current and exhibits 20 ns reverse recovery time, making it suitable for synchronous rectification in DC-DC converters.

Is the DMN10H220LPDW-13 qualified to AEC-Q101?

While not pre-certified on the datasheet, Diodes Incorporated states that automotive-grade versions of this part are available upon request and require specific change control-including AEC-Q101 qualification, PPAP documentation, and manufacturing in IATF 16949-certified facilities. Standard commercial-grade units (e.g., DMN10H220LPDW-13) are not AEC-Q101 qualified unless explicitly ordered as such.

What is the significance of the "wettable flank" feature?

The wettable flank design exposes vertical sidewalls of each lead for solder wetting during reflow, enabling automated optical inspection (AOI) to verify solder fillet formation and joint integrity-especially critical for automotive and medical applications where zero-defect assembly is mandated. It eliminates reliance on X-ray for hidden-joint validation.

DMN10H220LPDW-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-PowerTDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual)
FET Feature:
-
Drain to Source Voltage (Vdss):
100V
Current - Continuous Drain (Id) @ 25°C:
8A (Tc)
Rds On (Max) @ Id, Vgs:
222mOhm @ 2A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
6.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
384pF @ 25V
Power - Max:
2.2W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount, Wettable Flank
Supplier Device Package:
PowerDI5060-8 (Type R)

DMN10H220LPDW-13 FAQ

1.How can I place an order for DMN10H220LPDW-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN10H220LPDW-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN10H220LPDW-13 reliable?

The price and inventory of DMN10H220LPDW-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN10H220LPDW-13 is usually 5 days.

3.What payment methods are accepted for DMN10H220LPDW-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN10H220LPDW-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN10H220LPDW-13?

DMN10H220LPDW-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN10H220LPDW-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN10H220LPDW-13?

For technical support, including DMN10H220LPDW-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN10H220LPDW-13 requirements.

6.How does Aetrix verify that DMN10H220LPDW-13 is sourced from the original manufacturer or authorized distributors?

All DMN10H220LPDW-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN10H220LPDW-13 meets industry standards.

7.What is the process for return or replacement of DMN10H220LPDW-13?

All DMN10H220LPDW-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN10H220LPDW-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN10H220LPDW-13 part is unused and in its original packaging.

Return procedure for DMN10H220LPDW-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMN10H220LPDW-13 Tags

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